Notes for chapter 4:

The process begins with deposition via substitutiional or interstitial diff With sub diffusion, the impurity hops from one lattice to another. Substitutional moves to vacancies, interstitial replaces the atom Very slow, but good control of the diffusion process D diffusion coeffeciaent, N concentration impurity. D is violated at high impurity cocentrations. Constant-source diffusion surface concentration is held constant throughout the diffusion Limited-source diffusion a fixed quanitity of the impurity species is dposited in a thin layer

CSD No = N for ease N(x,t)=N0erfc(x/2sqrt(Dt)) , No is the impurity concentration at the surface of the wafer. Q is the dose. Q = 2N(sqrtDt/pi) Limited Source Diffusion Modeled as impulse function N(x,t)= (Q/sqrt(pi*Dt)e(x/(2sqrtDt)^2) THE DOSE remains constant. Guassian distrubition/ Two step diffusion: A short CSDiff is followed by a LSDiff CSD is known as the predeposition step., second step is known as the drive in step. If Dt for drive in is >> Dt for predep, the profile is Gaussianvice versa the profice is erfc

Diffusion Coeffecient: Temperature Dependent. For interstitial diffusers they are hard to control because DT is high at lower temper D=D0exp(-Ea/kT) .. Ea being in electron Volts and Do is from a table. Dt total is the summation of the Dts of all the steps.. and I used for the final impurity distribution. Dt

Solid Solubility Limits At a given temperature there is an upper limit to how much can be absorbed by silicon. Junction Formation and characteristics: Most diffusions form pn junstions by converting p to n type or vice versa. The point at which the diffused impurity profice intersects the background concentration is the

metallurgical junction depth xj. The net impurity here is ZERO. From the chart where N and NB meet is xj. And the net impurity from before xj is one type and after is the other time. Dependeing on what was the background.

Need a Chart from pg 77 to complete.

Lateral Diffusion: During diffusion impurities diffuse into the material but spread laterally as well.

Concentration-Dependent Diffusion: Diffusion follows the theory of 4.3 as long as impurities is below ni at the diffusion temperature. Above that Dt becomes concentration dependent. Dsur is the diff coefficient at the surface. SHEET resistance:

Sheet resistance depends on majority carrier concentration. Four Point Probe: It is used to measure the bulk resistivity of starting wafers and the sheet resistane of shallow diff layers.

Junction Depth and Impurity Profile Measurement: Test dice replace regular dice and methods are used to measure Grove and stain make a cylindrical groove and then junction depth is found by

This is used if the radius R of grinding tool is known. For big R

Then a stain is applied (chemical etchant).

Angle lap way

Theta is the angle of the fixture, lamba is the wavelength of light,N Is the number of fringes. A SIMS method is used. A low energy beam of light is used to sputter atoms from the surface one or two atomic layers at a time. They are ionized and put through a mass spectrometer.

DIFFUSION SYSTEMS: