Question 1: There are several laser diode efficiency definitions as follows: The external quantum efficiency EQE, is defined

EQE =
Number of output photons from the diode(per unit second) Number of injected electrons into diode (per unit second)

The external differential quantum efficiency, EDQE, is defined

EDQE =
Increase in number of output photons from diode (per unit second) Increase in number of injected electrons into diode ( per unit second)
Optical output power

The external power efficiency, EPE, of the laser diode is defined by EPE = Electical input power a) If Po is the emitted optical power, show that EQE =

e dP ePo Eg o , EDQE = , EPE = EQE Eg I eV Eg dI

b) A commercial laser diode with an emission wavelength of 670 nm (red) has the following characteristics. The threshold current at 25C is 76 mA. At I = 80 mA, the output optical power is 2 mW and the voltage across the diode is 2.3 V. If the diode current is increased to 82 mA, the optical output power increases to 3 mW. Calculate the external QE, external differential QE and the external power efficiency of the laser diode. c) Consider an InGaAsP laser diode operating at = 1310 nm for optical communications. At I = 40 mA, the output optical po er is 3 m! and the "oltage across the diode is 1.4 #. If the diode current is increased to 4$ mA, the optical output po er increases to 4 m!. Calculate e%ternal &uantum efficienc' ()*), e%ternal differential )*, e%ternal po er efficienc' of the laser diode. Question 2: a) Determine the maximum value of the energy gap which a semiconductor, used as a photoconductor, can have if it is to be sensitive to yellow light (600 nm). b) A photodetector whose area is 510-2 cm2 is irradiated with yellow light whose intensity is 2 mW cm2. Assuming that each photon generates one electron-hole pair, calculate the number of pairs generated per second. c) From the known energy gap of the semiconductor GaAs (Eg = 1.42 eV), calculate the primary wavelength of photons emitted from this crystal as a result of electron-hole recombination. Is this wavelength in the visible? d) !ill a silicon photodetector +e sensiti"e to the radiation from a GaAs laser, !h', Question 3: Consider two commercial Si pin photodiodes, type A and type B, both classified as fast pin photodiodes. They have the responsivity shown in the Figure. Differences in the responsivity are due to the pin device structure. The photosensitive area is 0.125 cm2 (4 mm in diameter). Calculate the photocurrent from each photodiodes when they are illuminated with blue light (450nm), with red light(700 nm), infrared light(1000 nm) and light intensity for each light 1 W cm-2. What are the Quantum Efficiency of each devices?
3esponsi"it'(A4!) 0.. 0.$ 0.4 0.3 0.0.1 0 -00 400 .00 /00 1000 1-00 !a"elength(nm) A 0 1he responsi"it' of t o commercial 2i pin photodiodes

Question 4 a) In t o energ' le"el s'stem, e%plain a+sorption, spontaneous emission and stimulated emission processes. (dra the energ' +and diagrams) +) In three energ' le"el s'stem, e%plain a+sorption, spontaneous emission and stimulated emission processes. (dra the energ' +and diagrams) c) !hat are the main criteria for lasing process, *%plain +riefl'.