1.

Distributia Fermica
a)Fermi – Dirac distribution for electrons. - 001_Mendeleev’ Table.ppt – Pag. 6-9

Fig. …………………………..1 pct.

Definitions of probabilities ….. 1pct

P( E1 ) ⋅ P( E 2 ) ⋅ (1 − P( E 3 ) ) ⋅ (1 − P( E 4 ) )
This is the probability to have an electron on energy level E1 and E2 (occupied states) and no electrons
on E3 and E4 (unoccupied states)

( 1 − P( E 1 ) ) ⋅ ( 1 − P( E 2 ) ) ⋅ P( E 3 ) ⋅ P( E 4 )
This is the probability to have an electron on energy level E3 and E4 (occupied states) and no electrons
on E1 and E2 (unoccupied states)
Both probabilities must be equal in the case of thermal equilibrium, therefore we can write the following
equality:

 1   1   1   1 
 − 1 ⋅  − 1 =  − 1 ⋅  − 1 ………………………2 pct.
 P ( E3 )   P ( E4 )   P( E1 )   P ( E2 ) 

E1 + E 2 = E3 + E 4 ………………………………………………1 pct

1
fe ( E ) = E −EF …………………………………………………..2 pct.
1+ e kT

Coments on the shape of F-D distribution …………………..2 pct

Bonus ……………………1 pct

Total …………………….10 pct

N( E k )
4π
(
= 3 2m n* ) 3/2
E1k/ 2
h
.
b)Fermi Dirac for holes.

E 3

E 1

E 2

E 4

P( E 1 ) ⋅ P( E 2 ) ⋅ ( 1 − P( E 3 ) ) ⋅ ( 1 − P( E 4 ) )
This is the probability to have an electron on energy level E1 and E2 (occupied states) and no electrons
on E3 and E4 (unoccupied states)

(1 − P( E1 ) ) ⋅ (1 − P( E 2 ) ) ⋅ P( E 3 ) ⋅ P( E 4 )
This is the probability to have an electron on energy level E3 and E4 (occupied states) and no electrons

on E1 and E2 (unoccupied states)

 1   1   1   1 
 − 1 ⋅  − 1 =  − 1 ⋅  − 1
 P( E 3 )   P( E 4 )   P( E 1 )   P( E 2 ) 

If the condition of energy conservation E1 + E 2 = E3 + E 4

probability to have an empty state is :

1
f p ( E ) = 1 − fe ( E ) =
EF − E
1 + e kT

Np ( E k ) =
4π
h 3
(
2mp* ) 3/2
E1k/ 2
2.Densitatea purtatorilor de sarcina intr-un semiconductor intrinsic
The density of charge carriers in intrinsic semiconductors. - 002_The Density of Charge Carriers in an
Intrinsic.ppt -> Pag. 1-7

1
se dau f e ( E ) =
4π
E −EF şi N ( E k ) =
h 3
( 2mn* ) E k1 / 2
3/ 2

1+ e kT

Barem de corectare:
Ek = E − Ec ………………………………………….. 1 pct
+∞
ne = n = ∫ f e ( E ) N ( E )dE ……………………………….1 pct
E C

E − EF
1 −
fe ( E ) = E − EF
≈e kT
………………………………..1 pct
1+ e kT
E −EF +Ec −Ec Ec −EF E −Ec
− − − ………………….1 pct
e kT =e kT ×e kT
E − Ec
x2 = ………………………………………..1 pct
kT
4π ( 2mn* )
3/ 2 E −EF ∞
− c
( kT ) ∫ 2 x 2 e − x dx …….2 pct
3/ 2 2
n= 3
e kT
h 0
∞

( )
∞ ∞
π
∫ 2 x e dx = − xe − ∫ − e −x dx =
2 2 2
2 −x −x
……….1 pct
0 0 0
2

2( 2πmn*kT )
3/ 2 Ec − EF Ec − E F
− −
n= e kT
= NC e kT ……………1 pct
h3
din oficiu …………………………………………………..1 pct
Total ………………………………………………………10 pct
In an intrinsic semiconductor, the density of the two types of charge carriers is the same
n=p

3.P conductor
 1
Se dă: f e ( E ) =
E F − Ev
E −EF şi p = N e − kT
V
1+ e kT

Barem de corectare:

şi comentarii …………………….3pct

1
fA− (E ) = E A −EF ………………...1pct
1 + e kT
E A −EF
− …………..1pct
N−A = NA fA− (E ) ≈ NAe kT

E −E
− F v
= N−A
…………………………………………….1pct
p = NV e kT
E −E E −E
− F V − A F ………………………………………….1pct
NV e kT = NA e kT
E + E v kT NV
EFp = A + ln …şi comentarii..……………………….2pct
2 2 NA

4.N conductor
 CB
EC

EV
VB
Hole (p)
Quasi-free electron (n)

Ek = E − Ec

4π
N ( Ek ) = 3
( 2mn* )3 / 2 Ek1/ 2
h

Ek = Ev − E +∞
ne = n = ∫E f e ( E ) N ( E ) dE
C

EV
n p = p = ∫−∞ f p ( E ) N p ( E ) dE
4π
N ( Ek ) = 3
( 2mn* )3 / 2 Ek1/ 2
h

4π ( 2mn* )
3/ 2 Ec − E F ∞ E − Ec

∫ (E − E )
− 1/ 2 −
n= e kT
c e kT
dE
h3 Ec

2( 2πmn*kT )
3/ 2 Ec − E F Ec − E F
− −
n= e kT
= NC e kT

h3
Ec − Ev
−
n = n × p = N C NV e
i
2 kT

E C − EF EF − E V
− −
NCe kT = NV e kT

−Ev −Ec +E F
NV E F

=e kT

NC

Ec + Ev kT N v
EF = + ln
2 2 Nc

5.Fenomene fizice in semiconductori

6.Jonctiunea PN
Desen densitate de sarcină...................................... 1pct

NALn = NDLp ................................................................1pct

eN A ( −Ln − x )S
E ( −x )S = ............................................1pct
ε
eN ( L − x )
E ( −x ) = − D p ..............................................1pct
ε
e NDLp
E m a x = − e NALn = − = E (0) ..................................1pct
ε ε
Desen E(x)............................................................... 1pct

+L p
E max (L p + Ln )
Vb 0 = − ∫ E ( x )dx = −
−L n
2
..... ...................2pct

Desen V(x)............................................................... 1pct

din oficiu ...............................................................................1pct

Total ...................................................................................10pct

7.Jonctiunea PN la echilibru termic(Einstein)

Einstein’s relations for Diffusion and Mobility coefficients. - 005_PNjunction.ppt – Pag. 6
D p kT Dn kT
= =
µp e µn e

8.Capacitatile PN
a)de baraj
b)de difuzie

9.Tranzistor bipolar(conditii,parametric functionare,curenti)

Curenti
Static working point for CEC. - 007_The Bipolar Junction Transistor (BJT).ppt(pag.9)

VBE = f1 ( I B ,VCE ); I C = f 2 ( I B ,VCE )

IC = βIB + ( β + 1) IC0 α
β=
1− α

IC

VBE IE

.Static working point for CBC. - 007_The Bipolar Junction Transistor (BJT).ppt – Pag. 11 si

pagina 8

VBE = f1( IE ,VCB ); IC = f2 (IE ,VCB )

IC = αIE + IC0
 IC

VBE IB

The CBC connection is the most stable operating configuration of bipolar transistor. This is provided by the fact
that we control the output current IC with a current IE , higher than the residual current of the collector and the
current gain (α) is approximately constant, having values in the range 0.98 - 0.99.
10.Caracteristici statice BC

V BE = f1 ( I E , VCB ); I C = f 2 ( I E , VCB )

IC = αIE + IC0

IC

VBE IB

11.Caracteristici statice EC

CE characteristics of BT. - 007_The Bipolar Junction Transistor (BJT).ppt – Pag. 9

V BE = f1 ( I B ,VCE ); I C = f 2 ( I B ,VCE ) and comments ……………2 pct

IC = βIB + ( β + 1) IC0

α
β=
1− α

IC

VBE IE
 12.Sensibilitatea fata de temperature a BT

Temperature sensitivity of BT.

I C 0 (T ) = I C 0 (T0 )e a⋅( T −T0 ) plus comentarii ………………………2pct

 T − T0 
β (T ) = β (T0 ) ⋅ 1 +  plus comentarii ………………………1pct
 K 
∂VBE
= −2.2 mV / 0 C …………………………………………………………..1pct
∂T
∂I C ∂I C ∂I ∂I C ∂VBE ∂I C ∂β
= × C0 + × + × …………………………1pct
∂T ∂I C 0 ∂T ∂VBE ∂T ∂β ∂T
∂I C
= S I ……………………………………………………………………….1pct
∂I C 0
∂I C
= S U ……………………………………………………………………...1pct
∂VBE
∂I C
= Sβ …………………………………………………………………………1pct
∂β
β +1
SI =
∂I ……………………………………………………………………1pct
1 −β B
∂I C

13.Modelul de semnal mic-hibrid

Parametrii hibrizi ce se definesc cu relaţiile:

∆Vi = h11 ∆I i + h12 ∆Vo

∆I o = h21 ∆I i + h22 ∆Vo

Parametrii "h" se utilizează în special în joasă frecvenţă unde ei sunt mărimi reale, care nu depind de frecvenţă.
Experimental aceşti parametri se determină prin măsurători în situaţia de gol la intrare (i1 = 0) şi scurcircuit la ieşire (u2 =
0) pentru componenta variabilă, ceea ce este foarte uşor de realizat la un tranzistor bipolar, deoarece acesta are
impedanţa de intrare Zintr mică şi impedanţa de ieşire Zies mare
Din relaţia de definiţie se observă că parametrii hibrizi au semnificaţii fizice diferite: h12, h21 -adimensionali, h11
-
impedanţă, h21 - admitanţa, ceea ce justifică denumirea de parametrii hibrizi

14.Conditii in care se poate simplifica un hybrid

Circuitul hybrid simplificat; condiţiile de simplificare(03_General Characteristics of an

Amplifier 6-8)
 Now, if we take into account the actual typical values for the hybrid parameters in the
equation for the input impedance (hre=10-4 ; Ai=hfe=102 ; R’L=104-103 ohm ;
hie=103 ohm), we will see that the second term in the expression of input impedance
can have values in the range 102-10. In this case we can ignore this term versus the
first term which has a value 10 to 100 times higher.
That means, from a practical standpoint of view, that in the hybrid model of the
transistor, we can neglect the reverse transfer factor hre.

The simplified circuit shown in Fig.4.9 can be used, too, for the computing of the
parameters of any amplifier, independent of the transistor connection type (CE;CB or
CC). Let’s test that right now.

15.Amplificator in BC
Amplificator C.B.C.( 04_Common Base Amplifier 1-2)
16.Amplificator in CC
17.Amplificator cu EC
Every amplifier is characterised by:
voltage amplification Av , current amplification Ai , input impedance zi and output admittance yo .
In order to be able to calculate these parameters it is necessary to transform the d.c circuit in it’s a.c.
equivalent circuit. Here are two rules to be followed:
• every capacitance is a short-circuit in a.c.
• the d.c. biasing source is a short-circuit to the ground in a.c.

Now, in a.c. circuit, we must replace the hybrid circuit of the tranzistor
in p u t h ie o u t p u t
B C

Rg ii =b i i o =c i
RB RC RL
h re v o h fe ib h oe
vg

E E
zi zo

18.Amplificator cu rezistenta in emitor

05_The Differential Amplifier

+ V
CC

R + c1 i - c i2 R
C C
- vo 1 + o v2
+ v
b1
+ e1 i - e i2
T T
R B
1 2
R B
ie= c t.

R E
vg vg
- VC C
 + e1 i - e i2
R B R B

R E
+ gv / 2 - vg / 2

M i r r o r p l a n e

Then the total a.c. current that flows through the resistor RE is zero. That means the emitters have
constant potential, as being grounded, from the a.c. standpoint of view.
19.Amplificator diferential in mod diferential

20.Amplificator diferential in mod comun

21. Reacţia în electronică; definiţie; tipuri de reacţie;
22. Avantajele reacţiei negative. 07_Feedback Amplifiers 5-8
23.Reactia pozitiva(Bauchauser)

v o zL i L kzL
Av = = =
vi vi zL + ro

z2 ( z1 + z3 )
zL = vi = vf = βvo
z1 + z2 + z3

z1 kz1z2
β= − 1=
z1 + z3 ro ( z1 + z2 + z3 ) + z2 ( z1 + z3 )

X1 + X 2 + X 3 = 0

X2
k=
X1
24.Oscilator LC

Oscilator Hartley/Collpitz
+ Vc c

R c
R B1

R B2 R E

jL 1 ω jL 2 ω

1 / j Cω
H a r t le y o s c illa to r

1 1
jL1ω + jL2ω − j = 0 ⇒ ω2 =
Cω ( L1 + L2 )C

+ Vc c

R c
R B1

R B2 R E

1 / j C1 ω 1 / j C2 ω

jLω
C o llp it z o s c illa t o r

1 1 1
jLω − j −j = 0 ⇒ ω2 =
C1ω C2ω  C1C2 
 L
 C1 + C2 
25.Oscilator RC

Oscilator RC cu punte Wien. Condiţia de oscilaţie.

 26.Circuite basculante
a)astabil
Circuitul astabil. 08_The Astable (free-running) Multivibrator 1-4
+ CVC

R C 1 R B2 R B1 R C 2
C C 2
1
+ VC E ( s a t) - VC C + VC C

I B 2 (d e s c )
T 1 ( o n )T 2 ( o f f )

+ CVC

R C 1 R B2 R B1 R C 2
C C 2
1

- VC C + VC E ( s a t )

I B 1 ( in c a r )

T 1 ( o n )T 2 ( o n )
 b)monostabil
Circuitul monostabil. 08_The Astable (free-running) Multivibrator 5

c)bistabil
.Circuitul bistabil. 08_The Astable (free-running) Multivibrator 6-7
27. Amplificator de putere clasă A. 06_Power Amplifiers 4-6
+ VC C
R B 2 R L

v i
R B 1 C E

R E
F ig . 5 . 2
Im ax IC

Ipeak
IQ Q A

I m in V Q V C E
V peak
V
V

m ax
m in
=V

=V
sat

C C
9. Amplificator de putere clasă B. 06_Power Amplifiers 7-9
Im ax IC

Ipeak

Q B

I m in V CE

V
m ax
m inV

=V
=V

peak

C C
sat

T 1
ic 1 - VC C
+
R L

vi -
ic2
+ V
CC
T 2