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DIPLOMA ENGINEERING
In
ELECTRICAL DEPARTMENT
SAR ODA! POL!TEC"NIC INSTIT#TE$ LIM%DI Li&b'i(D)an')*+a State "i,)wa-$ Near Gopa. Na,ar$ LIM%DI(/0/123
CERTIFICATE
This is to certify that Mr7 La+*& Ma-*r from Sarvoday polytechnic Institute, Limbdi having Enrolment No:3301/6/6891/ has completed Report on Se&ester Pro4e5t Report Having title MOSFET base power inverter in
CERTIFICATE
This is to certify that Mr7 Ma+vana Ma)es) from Sarvoday polytechnic Institute, Limbdi having Enrolment No: 3301/6/68933has completed Report on Se&ester Pro4e5t Report Having title MOSFET base power inverter in
CERTIFICATE
This is to certify that Mr7 Mir:a asi& from Sarvoday polytechnic
Institute, Limbdi having Enrolment No:3601/6/68902 has completed Report on Se&ester Pro4e5t Report Having title MOSFET base power inverter in
%)#N*+LE& E!ENT
+e are Successive Students of Electrical Engineering &epartment of Sarvoday $olytechnic institute at limbdi" +e are indebted to number of individuals ,ho have contributed to this pro'ect" Their contribution in so many different ,ays that ,e find it difficult to ac-no,ledge them in any other manner but alphabetically" +e are greatly indebted to !r"$" " $ra'apati, the H*& of electrical dept" For his constant inspiration in ma-ing this report in particular ,e ,ish yo e.tend our appreciation to our pro'ect" +e than- !r"S"#"patel / !r""$" "$ra'apati his support and guidance and for patiently listening and solving our most rudimentary problems ,e are than-ful to the complete staff of Electrical dept"and our friends for their inspirational support us" %t last ,e ,ant to than- all ,ho have support us directly or indirectly ma-ing our path to a successful completion of the pro'ect"
Index
Sr7 No7
37 27 /7 97 07 <7 =7 87 367 337 327 3/7 317 397 Av+now.e',e&ent Absrta5t Fi,*re in'e; C"APTER(3 Intro'*5tion C"APTER(2 %.o5+ 'ia,ra& %.o5+ 'ia,ra& 'es5risption Cir5*it 'ia,ra& Cir5*it 'ia,ra& 'es5ription C"APTER(/ List o> 5o&ponent S)ort 'es5ription o> 5o&pontent Data s)eet C"APTER(1 F.ow 5)art C"APTER(9 App.i5ation %ib.o,rap)Tit.e Pa,e No7
5 7 8 9 11 12 14 15 17 19 27 28 29 30
A%STRACT
The &")" T* %") po,er converters are -no,n as inverter in other ,or-s and inverter is a current ,hich converts a &"S" $o,er into an %")" $o,er at desired output voltage and fre0uency" The %")" *ut put voltage could be fi.ed or variable fre0uency" The %")" *utput voltage could be fi.ed at a fi.ed or variable fre0uvancy" This coverson can be achieved either by controlled turn off device or by forced commutated thayristor, depending on a application for ia, and medium po,er outputs, the above mentioned po,er device are suitable but for highpo,er outputs, thyristor should be used" There are some important of inverter one of them is to induction heating second one of them is to variable speed %")"motor drive"
Fi$.name
&a$e n%.
11 14 17 31 33 35 34 38 39 3;
'()&* R+1
I!*R,"U'*I,!
The full from of !*SFET is !etal *.ide Semiconducter Filed Effect Transistor" Its evolved from integrated circuit techonology in the 17:>?s in response to the Need to develop po,er transistor that can be controlled using much lo,er gate drive po,erLevels compared to the e.isting po,er bi polar transistor"!*SFET is the most siginficsnt &evelopmentin po,er semiconductor device since the introduction of thyristor" It offer Typical use including of s,itching of linear po,er supplies, speed control of &")"and %")" !otor, stepper motor controller, solenoid drives, medical e0uipment robotics applince control, induction heating inverter and instrumentation " $o,er !*SFET is a voltage controlled device and re0uires only a small input current" In this devices, the control signal is applied to a metal get electrode that is separated from the semiconductor surface by an intervening insuiator typically silicon dio.ide"the control signal re0uired is essentilly a bias voltage ,ith no significant steady sate gate current flo, in either the on state or the off sate" Even during the s,ithing of the device bet,een this sate" The gate current is small at typical operating fre0uncy because it onlay serves to charge and discharge the input gate capacitance the high input imperndence the primary feature of the po,er !*SFET that greatly simplifies the drive cicuitry and reduce the cost of the po,er electronics" The po,er !*SFET is unipolar devise" )urrentcodution occurs through transport of ma'ority carries in different region ,ithout the presence of minorty carries in 'ust re0ired for bipolar transister operation" In this device durring turn off, no delays are observed as a result of storng or recombination of minorty carries" Thaireainherent s,iching speed is order of magnitude faster than that for bipolar transistor" Thais feature is particular attractiv in current opereting high fre0vencies ,here s,ithing po,er losses are dominet" The po,er !*SELL@s s,itching timing is in order of 8>A1>> nanosecond and can generating many -ilo,atts of po,er at fri0uencies up to 8>> #H=" Even durring the s,iching of devies bet,een thasestabel the gate current is small at typical operation fre0uency because it only serves to charge and discharge input gate capaitance the high input impedence primary feature of the po,er !*SFET that generally simplifies the gate drive cricultry and reduce the cost of the po,er electronics"
9
The po,er !*SFET is unipolar device" )urrent condution occursthourghttanspor of ma'orty carriers" in the drift region ,ithout the presence of minority in'ection re0uired for bipolear transistor operation in this devies during thair iinherited s,iching speed is order or magnitude faster than that the bipoler transistor po,er losses are domination the po,er !*SFET having operation fre0vencies are ,ell above 1>>#HB" The po,er !*SFETs s,iching times is in order of 8>C1>> nanosecond and can generated many -ilo,atts of po,er at fre0vencies up to 8>#HB"
10
atter%
-5 v .e+!lator
,river )i&!it
#!tp!t
)*ar+er
!""er #r $ed
Power Amplifier
Inverter Transformer
11
12
DRI ER CIRC#IT
The flipCflop out put is !*SFET driver transistor T1 / T3 via a diode transistor net,or-" %t any instant, if the voltage of pin no"; of I)5 is F8v,the voltage at its pin no" 7 ,ill be >v,and vice varsa" Therefore ,hen transistor T1 conducts, T3 is cut off, and vice versa ,henever output pin ; of I)5 goes high N$N transistor and thr corresponding set of !*SFETs GT5CT8H remains cut off ,hile the collector of transformer?s primary ,inding" Similarly, ,hen output pin no" 7 of I)5 goes
high N$N transistor T3 conduct and the corresponding set of !*SFETs GT9CT;H remains cut off ,hile the collector of taransistor T1 is T8 v" Thus current flo,s through the inverter transformer?s primary ,inding"
POAER AMPLIFIER
The po,er amplifier section comprises to, sets of three po,er !*SFETs connected in parallel of opration of the inverter" The output of I)5 drives the !*SFET via transistor T1 / T3 to generate 8> HB, 35> < %") at the output of inverter transformer I1"
FA%RICATION
@ou can assemble the circuit on given $")"2" Ho,ever,an actual siBe $)2 for the medium po,er inverter circuit is sho,n" $in configuration of !*SFET I6F=44, regulator I) :;>8 and N$N transistor 2&I 57 are given" % fter construction, enclose the entire circuit in any portable bo." Jse separate heat sin-s for each !*SFET set"
13
14
15
the inverter is operating at the %ustraliaANe, =ealand mains fre0uency of 8>HB, the output ,ill also contain components at 1>>HB, 18>HB, 3>>HB, 38>HB and so on" These harmonics can disturb the operating of some appliances" Its because of this shortcoming that manufacturers have come up ,ith a more comple. type of inverter, ,hich does deliver a pure sine,eve output"
O#TP#T REG#LATION
+e ta-e for granted the fact that our mains po,er is very ,ell regulated" So you can plug almost any appliance into a standard point outlet, and it ,ill oparate correctly" Thats because the electricity supplier has enormous generating palnts, ,ith autumatic regulation systems to -eep the mains voltage and fre0uency very close to constant, despite load variations of many mega,atts" cant get this -ind of performance from a much amaller electronic inverter, connected to a modest battery or solar panel as the energy source" Ho,ever most modern inverter,can provide reasonable good regulation for loads of up to their rated capacity Ggiven in ,atts H" %ssuming of course that theyre running from a,ellC charged battery"In this type of inverter it isnt feasible to control the pea-CtoCpea- output, because this largely fi.ed bythe battery voltage and the transformers stepCup ratio" So in most cases the ragulation is achieved in different ,ay by varing"the ,idth of the rectagular pulses,to control the forom facrtor and hence the 6!S value of the output voltage" This is called pulse ,idth modulation G$+!H, and is usually done by having afeedbac- system ,hich senses the inverters output voltage Gor load currentH" +hen this feedbac- senses that the load on the inverters output has increased the inverters control circuitry acts to increase the ,idth of pulses ,hich turnon the !*SFETS so the !*SFET turn on for longer aach halfC cycle, automatically correcting the 6!S value of the output to compensate for antdroop in pea-CtoC pea- output"the resulting regulation is usually capable of -eeping the 6!S value close toconstant, for loads up to the inverters full rated output po,er"
16
C"APTER (/
4.1 LIST OF COMPONENT RESISTOR
61,65,67 63,613,T* 619 69,6; 6: 64 68 611 61> $1 1"3# M 1#M 55> M 1 M 1+ 89> M 1># M 18# M 33> M 8># M HoriBontal $reset 2ro,n 6ed 6ed olden
CAPACITOR
)1,)3,)5 )4 )8 )9 ): >"1NF ( 1>4 1>>NF A 95 < >"4:NF A95 < >">1NF ( 1>5 1>>>NF A 38 <
SEMICOND#CTOR
17
&1,&4 &3,&5 &8,&9,&:,&; K1,K4 K3,K5 T1 T* T9 I) 1 J1 J3 J5 L3,L8 L4 L1 6L1 S1 Transformer Inverter transformer 2ettery
8"1 < IN 414; IN 4>>: 2) 84: 2& 157 I6F= 44 :;>8 L! :41 NE 888 :4LS:5 6ed LE& @ello, LE& reen LE& 13 <,3>>M *NA*FF S,ith
=ener diode
I)* 6elay
>C13 v,1% For battery charging 13<G&)H To 35><,18>+G%)H Seale Lead acid 6echargeable 2attery
RESISTOR
Fi,7/ Resistor
% liner resistor is a linear passivet,o terminalelectrical componet that implement electrical
resistce as a circuit element"The current thorouh a restistor in direct proportion to the voltage across the resistor terminal thus the ratio of the voltage applied across a resistor?s terminals to the intensity of current though the circuit is called restance" This relation is represented by *hm?s la,: IO<A6 6esistor are comman elements of electrical net,or- and electronic circuit and are ubi0uion in most electronic e0uipment" $ractical resistor can be made of various compounds and films as ,ell as resistance ,ireG,ire made of a highCresisitivity alloy,such as nic-elCchromeH"resistors are also implemented eithin integranted circuits,particularly analog devies,and can also be integrated into hybrid and printed circuit" The electrical functionality of a resistor is specified by its resistetance:comman commercial resistor are manufuctured over a range of more than nine order of magnitude",hen specifyimg that resistance in an electronic design,the re0uired precision of the resistance may re0uier attention to the manufacturing tolerance of the chose resistor,according to its specific application"the tempperature coefficient of the resistance may also be of concern in some precision applications"practical resisters are also specified as having a ma.imum po,er rating ,hich must e.ceed the anticipated po,er electronics application"resistors ,ith higher po,er rating are physically larger and may re0uire heat sin-s" Ina circuit attention must sopmetimes be paid to the rated ma.imum ,or-ing voltage of the resistor"
19
$ractical resistor have a series inductance and a small parallel capacitancePthese specification can be impornant in high fre0uncy application" In a lo, noise amplifier or preCamp the noise characteristics of a resistor may be an issue" The un,anted iductance e.cess noise and temperature coefficient are mainly dependent on the technology used in manufacturing the resistor" They are not normally speifid indidully for a particular family of resistor manufactured using a particular technology "afamily of discrete resistors is also charcteriBed using yo its form factor that is the siBe of the device and the potion of its leadsGor terminalH ,hich is relevant in the pactical manufacturing or circuit using them"
CAPACITOR
The capacitor or the electrical condenseris a device for storng an electrical chage" In simplest form a capacitor consists of metal plate sepated by a nonconducting layer called the dielectric" %tes are metal Cfoil coating an the inside and outside of a glass bottel or 'ar that server as the dielectric" +hen one plate is chraged ,hith electricity from a directCcurrent or electosatatic source,the other plate ,ill have induction in it charge of the opposite that is positive if the orignal charge is negative and negative if the positiv" The leyden 'ar as asipmle from of capacitor in ,hich the t,o conducting plate are metal foil coating on the inside and outside of a glass bottele or 'ar that serves as the dielectric(
20
Fi,71 Capa5itor
The electrical siBe of a capacitor is its capacitance the amount of electric charge it can hold")apacitors are limited in the amunt of electic charge they can absorbPthey can conduct direct current for only an instans but function ,el as conductors in altenating current cicuit"this proptiy ma-es them useful ,hen direct current mustr be prevented from enterning some part of an electric circuit"
MOSFET
21
Fi,79 Mos>et
% traditional metalCo.ideCsrmiconductorG!*SH structure is obtained by gro,ing of a layer of silicon dio.ide GSio3H on top of asilicon substrate and depositing a layer of metal or polycrystalline silicon Gthe latter is commonly usedH" %s the silicon dio.ide is a dielectric mtereils,its strucure is e0uipment to a planar capacitor, ,ith one of the electrodes replaced by a semiconductor" +hen a voltage is applide across a !*S structure,it modifils the distribution of charge in the semiconductor" If ,e consider a pCtype semiconductor G,ith N % trhe density of accepttors,$ the density of holesP $ON% in neature bul-H, a positive voltage,v 2 from gate to body Gsee figureH creates a depletion layer by forcing the positively charged holes a,ay from the gate insulaterAsemiconductor interface, leaving e.posed a carrirCfree rigon of immobile negatively charged accepctor ions Gsee dopingGsemiconductorH" If v 2 is high enough a high connection of negative charge carrier froms in inversion layer located in the layer ne.t to the interface bet,een the semiconductor amd the insulater" Jnli-e the !*SFET,,here the inversion layer electrons are supplied rapilied from the suurceAdrain electrode, in the!*S capacitor they are proudced mush more so,ly by thermal genrestion through carreir genrestion and recombination center in the depletion region" )onvetionally, the gate voltage at ,hich the voume density of electrons in the inversion layer is the same as the volume density of holes in the body is called the threshold voltage" This struture ,ith $Ctype body is the basic of the NCtype !*SFET ,hich re0uires the addition of 22 an NCtype source and drain regions"
ota,e
>
ti&e
23
Fi,7< I5 999
The L!888 is a highly stable device for generating accurate time dalays or oscillation" %dditional terminal are provide for trigger or resetting if desired" In the time delay mode of operation the time is precisely controlled by one e.ternal resistor and capacitor" For asteble operation as an oscillator,the free runnig fre0uvancy and duty cycle are accurately controlled ,ith t,o e.ternal resistors and one capasitor" The circuit may be triggered and reset von falling ,aveforms and the output circuit can source or sin- up to 3>> m%or drive TTL circuits"
App.i5ation C
$recision timing $ulse generation Se0uential timing Time delay generation $ulse ,idth modulation $ulse position modulation Linear ramp generator
24
Feat*resC
*utput current up to 1% *utput voltage of 8,9,;,7,1>,13,18,1;,34< Thermal overload protection Short circuit protection
FENER DIODE:-
25
% =ENE6 &I*&E is a type of diode that permit curremt not only in the for,ord direction li-e a normal diode," 2ut also in the for,ord direction li-e a normal diode but also in the reverse direction if the voltage is larger than than the brea-do,n voltage -no,n as =ener ,ho discovered this electrical property" =ener diode a special diode ,hich is used to nmaintain a fi.ed voltage across its terminal"
26
High reliability" Lo, lea-age" Lo, for,ard voltage drop" High current capability(
27 C"APTER(1
FLOA C"ARTC(
NO ,2T2.6I02 3A$42
I I2 #5 I)
A()(#4TP4 T
28
APPLICATIONSC( 1" $o,er supply 1"1 s,itching po,er supplies 1"3 &)A&) converters 1"5 <6!) voltage 6eulator module 1"4 2ase staion S!$S Gs,itch C modeCpo,er supplyH 1"8 )omminucations E0uipment &)A&) converter 3" !oter &rive : 3"1 Smoll motor &rive 5" 4" 8" Servo !otor A inverter %utomotive Jse For %utomobile Electrical +iring Lamp inverter
%I%LOGRAP"!C(
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