IRF9620, SiHF9620

Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 22 12 10 Single
S

FEATURES
- 200 1.5

Dynamic dV/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
Available

RoHS*
COMPLIANT

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

TO-220AB
G

S D P-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220AB IRF9620PbF SiHF9620-E3 IRF9620 SiHF9620

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at - 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM TC = 25 C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT - 200 20 - 3.5 - 2.0 - 14 0.32 40 - 5.0 - 55 to + 150 300c 10 1.1 W/C W V/ns C lbf in Nm A UNIT V

Linear Derating Factor Maximum Power Dissipation Peak Diode Recovery dV/dtb

Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. ISD - 3.5 A, dI/dt 95 A/s, VDD VDS, TJ 150 C. c. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91082 S11-0512-Rev. B, 21-Mar-11 www.vishay.com 1

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9620, SiHF9620
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.50 MAX. 62 3.1 C/W UNIT

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS

VGS = 0 V, ID = - 250 A Reference to 25 C, ID = - 1 mA VDS = VGS, ID = - 250 A VGS = 20 V VDS = - 200 V, VGS = 0 V VDS = - 160 V, VGS = 0 V, TJ = 125 C VGS = - 10 V ID = - 1.5 Ab Ab VDS = - 50 V, ID = - 1.5

- 200 - 2.0 1.0

- 0.22 -

- 4.0 100 - 100 - 500 1.5 -

V V/C V nA A S

VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5

350 100 30 15 25 20 15 4.5 7.5

22 12 10 nH ns nC pF

VGS = - 10 V

ID = - 4.0 A, VDS = - 160 V, see fig. 11 and 18b

VDD = - 100 V, ID = - 1.5 A, Rg = 50 , RD = 67, see fig. 17b

Between lead, 6 mm (0.25") from package and center of die contact

300 1.9

- 3.5 A - 14 - 7.0 450 2.9 V ns C

TJ = 25 C, IS = - 3.5 A, VGS = 0

Vb

TJ = 25 C, IF = - 3.5 A, dI/dt = 100 A/sb

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %.

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Document Number: 91082 S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9620, SiHF9620
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
-5 VGS = - 10, - 9, - 8, - 7 V -5 80 s Pulse Test VGS = - 10, - 9, - 8, - 7 V

ID, Drain Current (A)

-3

-6V

ID, Drain Current (A)

-4

-4

-3

-6V

-2 -5V -1 80 s Pulse Test -4V 0 0 - 10 - 20 - 30 - 40 - 50

-2 -5V -1 -4V 0 0 -1 -2 -3 -4 -5

91082_01

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

91082_03

VDS, Drain-to-Source Voltage (V)

Fig. 3 - Typical Saturation Characteristics

-5

TJ = - 55 C TJ = 25 C TJ = 125 C

102

ID, Drain Current (A)

-4

Negative ID, Drain Current (A)

Operation in this area limited by RDS(on)

10 100 s
5

-3

-2

1 ms 10 ms TC = 25 C TJ = 150 C Single Pulse 1

2 5

1
5

-1 80 s Pulse Test VDS > ID(on) x RDS(on) max. 0

91082_02

0 -2 -4

0.1

-6

-8

- 10
91082_04

10

102

103

VGS, Gate-to-Source Voltage (V)

Fig. 2 - Typical Transfer Characteristics

Negative VDS, Drain-to-Source Voltage (V)

Fig. 4 - Maximum Safe Operating Area

ZthJC(t)/RthJC, Normalized Effective Transien Thermal Impedence (Per Unit)

2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 10-5

2 5

D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse (Transient Thermal Impedence) PDM t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Per Unit Base = RthJC = 3.12 C/W 3. TJM - TC = PDM ZthJC(t)
5

10-4

10-3

10-2

0.1

1.0

10

91082_05

t1, Square Wave Pulse Duration (s) Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

Document Number: 91082 S11-0512-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9620, SiHF9620
Vishay Siliconix

4.0 80 s Pulse Test VDS > ID(on) x RDS(on) max.

RDS(on), Drain-to-Source On Resistance (Normalized)

2.5

ID = - 1.0 A VGS = - 10 V

gfs,Transconductance (S)

3.2 TJ = - 55 C 2.4 TJ = 25 C TJ = 125 C

2.0

1.5

1.6

1.0

0.8

0.5

0.0 0
91082_06

-1

-2

-3

-4

-5
91082_09

0.0 - 40

40

80

120

160

ID, Drain Current (A)

TJ, Junction Temperature (C)

Fig. 6 - Typical Transconductance vs. Drain Current

Fig. 9 - Normalized On-Resistance vs. Temperature

- 20

500 Ciss

IDR, Reverse Drain Current (A)

- 10 400 -5 -2 - 1.0 - 0.5 - 0.2 - 0.1 - 2.0 0 - 3.2 - 4.4 - 5.6 - 6.8 - 8.0
91082_10

C, Capacitance (pF)

300 Coss 200 Crss 100

TJ = 150 C TJ = 25 C

VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd C ,C Coss = Cds + gs gd Cgs + Cgd Cgs + Cgd

- 10

- 20

- 30

- 40

- 50

91082_07

VSD, Source-to-Drain Voltage (V)

VDS, Drain-to-Source Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage

BVDSS, Drain-to-Source Breakdown Voltage (Normalized)

1.25

Negative VGS, Gate-to-Source Voltage (V)

20

ID = - 3.5 A VDS = - 100 V VDS = - 60 V VDS = - 40 V

1.15

16

1.05

12

0.95

0.85

4
For test circuit see figure 18

0.75 - 40
91082_08

40

80

120

0 0 4 8 12

160

16

20

TJ, Junction Temperature (C)

Fig. 8 - Breakdown Voltage vs. Temperature

91082_11

QG, Total Gate Charge (nC)

Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91082 S11-0512-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9620, SiHF9620
Vishay Siliconix

L
5 RDS(on) measured with current pulse of 2.0 s duration. Initial TJ = 25 C. (Heating effect of 2.0 s pulse is minimal.) VGS = - 10 V

Vary tp to obtain required IL D.U.T.

VDS

V DD EC 0.05

RDS(on), Drain-to-Source On Resistance ()

VGS = - 10 V

tp

IL VDD = 0.5 VDS EC = 0.75 VDS

2 VGS = - 20 V 1

Fig. 15 - Clamped Inductive Test Circuit

VDD
0 0
91082_12

-4

-8

- 12

- 16

- 20

IL tp EC

ID, Drain Current (A)

VDS

Fig. 12 - Typical On-Resistance vs. Drain Current

Fig. 16 - Clamped Inductive Waveforms

3.5

Negative ID, Drain Current (A)

3.0 2.5 2.0 1.5 1.0 0.5

- 10 V RG VGS RD VDS D.U.T.

+VDD

0.0 25
91082_13

50

75

100

125

150

Pulse width 1 s Duty factor 0.1 %

TC, Case Temperature (C)

Fig. 17a - Switching Time Test Circuit

Fig. 13 - Maximum Drain Current vs. Case Temperature

40

PD, Power Dissipation (W)

35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 90 % VDS td(on) VGS 10 % tr td(off) tf

91082_14

TC, Case Temperature (C)

Fig. 17b - Switching Time Waveforms www.vishay.com 5

Fig. 14 - Power vs. Temperature Derating Curve Document Number: 91082 S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9620, SiHF9620
Vishay Siliconix

Current regulator Same type as D.U.T.

50 k
12 V

- 15 V QGS

QG

0.2 F 0.3 F

QGD

D.U.T. VGS
- 3 mA

+ VDS

VG

Charge
Fig. 18a - Basic Gate Charge Waveform

IG ID Current sampling resistors

Fig. 18b - Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+
Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer

Rg

dV/dt controlled by Rg ISD controlled by duty factor D D.U.T. - device under test

+ VDD

Note Compliment N-Channel of D.U.T. for driver

Driver gate drive P.W.

Period

D=

P.W. Period VGS = - 10 Va

D.U.T. lSD waveform Reverse recovery current

D.U.T. VDS waveform

Body diode forward current dI/dt Diode recovery dV/dt

VDD

Re-applied voltage Inductor current

Body diode forward drop

Ripple 5 % Note a. VGS = - 5 V for logic level and - 3 V drive devices

ISD

Fig. 19 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91082.

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Document Number: 91082 S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
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Vishay Siliconix

TO-220AB
E A

MILLIMETERS DIM.
F

INCHES MIN. 0.167 0.027 0.047 0.014 0.585 0.395 0.095 0.192 0.045 0.240 0.095 0.526 0.131 0.139 0.102 MAX. 0.183 0.040 0.068 0.024 0.610 0.414 0.105 0.208 0.055 0.255 0.115 0.552 0.150 0.155 0.118

MIN. 4.25 0.69 1.20 0.36 14.85 10.04 2.41 4.88 1.14 6.09 2.41 13.35 3.32 3.54 2.60

MAX. 4.65 1.01 1.73 0.61 15.49 10.51 2.67 5.28 1.40 6.48 2.92 14.02 3.82 3.94 3.00

A b b(1) c D E

P H(1) D Q

e e(1) F H(1)
1
L(1)

J(1) L L(1)
M* b(1)

P Q

ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM Xian and Mingxin actual photo
C

b e J(1) e(1)

Revison: 08-Oct-12

Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

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Vishay

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customers technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

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Revision: 02-Oct-12

Document Number: 91000