Applied Surface Science 247 (2005) 493496 www.elsevier.

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Cobalt-doped ZnO a room temperature dilute magnetic semiconductor

C.B. Fitzgerald *, M. Venkatesan, J.G. Lunney, L.S. Dorneles, J.M.D. Coey
Physics Department, Trinity College, Dublin 2, Ireland Available online 26 February 2005

Abstract Room temperature ferromagnetism is observed in thin lms of ZnO doped with 125 at.% cobalt. Bulk samples were synthesized by a solid-state reaction technique and (1 1 0) textured thin lms were prepared by pulsed laser deposition on R-cut sapphire substrates. Films are semiconducting and transparent. Resisitivity increases with increasing cobalt content. Room temperature magnetic moments of 0.5-5 mB per Co atom were measured in the thin lms. Optical spectrometry indicates that cobalt enters the tetrahedral sites of the wurtzite structure as Co2+. # 2005 Elsevier B.V. All rights reserved.
Keywords: Cobalt-doped ZnO; Magnetic semiconductor; Ferromagnetism

Dilute magnetic semiconductors (DMS) produced by doping transition metal ions into non-magnetic semiconductors have attracted a great deal of interest [1]. It has been reported that the wide gap semiconductor ZnO exhibits ferromagnetism with a Curie temperature above room temperature when the oxide is doped with a few atomic percent of cobalt [28] or another transition element (V, Mn, Ni) [911]. Theoretical calculations predict high-Tc and large magnetization values for Mn-doped p-type ZnO [12]. However, thin lms of ZnO doped with 3d transition
* Corresponding author. Tel.: +353 1 6082171; fax: +353 1 6711759. E-mail address: ctzger@tcd.ie (C.B. Fitzgerald).

metal ions prepared by different techniques pulsed laser deposition [2], molecular beam epitaxy [13] and magnetron sputtering [14] are usually n-type. Other reports suggest that no high-temperature ferromagnetic state exists in these systems [15]. Doubts also exist as to whether these are homogeneous, singlephase materials, particularly since the well-accepted mechanisms for ferromagnetic exchange via spinpolarized p-band holes as in Ga1xMnxAs [16], or via double exchange as in mixed valence manganites [17] do not seem to apply in these oxides. A new exchange mechanism involving donor electrons in an impurity band has been proposed [18]. Here we examine the effects of varying cobalt concentration in Zn1xCoxO thin lms.

0169-4332/$ see front matter # 2005 Elsevier B.V. All rights reserved. doi:10.1016/j.apsusc.2005.01.043

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C.B. Fitzgerald et al. / Applied Surface Science 247 (2005) 493496

Ceramic targets of Zn1-xCoxO, with x = 0.010.15, were synthesized from stoichiometric amounts of high purity ZnO and CoO powders. The oxide powders were ground under isopropanol for 1 h, then pressed into pellets and sintered at 850 8C for 12 h in 0.5 bar of 0 2) argon. The thin lms were deposited on R-cut (1 1 sapphire substrates maintained at 600 8C using a KrF excimer laser operating at 248 nm and 10 Hz. Laser uence on the target was 1.8 J cm2. The targetsubstrate distance was 35 mm and the oxygen pressure was 104 mbar. Phase analysis was carried out using X-ray diffraction (XRD) and scanning electron microscopy (SEM), with energy dispersive X-ray analysis (EDAX) for elemental analysis and mapping. Magnetization measurements were made in a SQUID magnetometer at 300 K. Film thickness was monitored during deposition using optical reectivity at 635 nm, and it was independently calibrated by low angle X-ray reectivity (XRR) measurements. Optical transmission spectra were measured between 1.65 and 3.95 eV to determine the band-gap and the electronic state of cobalt ions. Electrical resistivity measurements were carried out by the van der Pauw method in the temperature range 300 K. Elemental maps of the targets obtained by energydispersive X-ray diffraction (EDAX) all show the nominal transition metal concentration, with a uniform cobalt distribution. X-ray diffraction conrms the wurtzite structure, with no impurity phases detected (Fig. 1). Targets exhibited weak ferromag-

Fig. 2. Plot of cobalt concentration in lms vs. target composition.

netism at room temperature, with moments of no more than 0.02 mB/Co atom. The thin lms are transparent with a pale green tinge. The X-ray diffraction patterns (Fig. 1) show the single-phase hexagonal wurtzite structure with welloriented (1 1 0) texture. The lattice parameter a stays almost constant with increasing cobalt concentration, as expected for Co2+. Film thickness was typically 65 nm. EDAX analysis indicates a homogeneous cobalt distribution within the lm, but the dopant concentration is greater in thin lms than in the targets (Fig. 2). All Co-doped ZnO lms are ferromagnetic at room temperature, with coercivity of 23 mT. The variation of the magnetic moment with cobalt concentration is shown in Fig. 3. The largest measured moment is

Fig. 1. X-ray diffraction pattern of the Zn0.95Co0.05O ceramic target, and a corresponding thin lm deposited by pulsed-laser deposition. The lm is well oriented with the (1 1 0) texture: S indicates substrate peaks.

Fig. 3. Magnetic moment of Zn1xCoxO lms measured at room temperature, with the moment expressed as mB/Co.

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Fig. 4. Plot of resistivity vs. temperature for Zn1xCoxO (x = 0.07, 0.14).

Fig. 5. Optical transmission spectra of Zn1xCoxO thin lms (x = 0, 0.07, 0.14, 0.23).

5.9 mB/Co, compared to the spin-only moment mspin = 3 mB Co2+ in the high spin d7 conguration e4t23. The moment drops as x increases, which can be understood in terms of a random distribution of cobalt ions over the cation sites in the wurtzite lattice. Isolated ions contribute the full moment, pairs and most groups of four are antiferromagnetically coupled and make no net contribution, triplets contribute mspin/ 3. Large antiferromagnetically coupled clusters of N atoms will make a contribution of mspin/N1/2. The model [18] reproduces the trend, but suggests a slightly greater tendency to form more cobalt neighbour pairs than a purely random distribution would provide. Films exhibit semiconducting behaviour, with resistivity increasing with increasing cobalt content (Fig. 4). Room temperature resistivity for the x = 0.07 sample is 200 V cm. They are n-type conductors, where the carriers are probably associated with oxygen vacancies. Optical transmission spectra for Zn1xCoxO (x = 0, 0.07, 0.14, 0.23) thin lms are compared in Fig. 5. The band edge for the undoped sample appears at 3.27 eV, while the band edge of the doped samples shift to progressively lower energies with x. The red shift with increasing cobalt content could be attributed to the sp d exchange interactions between the band electrons and the localized d electrons of the Co2+ ions [19]. Also, as the cobalt content increases, so does the absorption band intensity. Clear evidence that cobalt enters the tetrahedral sites of the wurtzite structure as Co2+ is seen as transitions in the spectra at 1.88, 2.04

and 2.2 eV, assigned as dd absorption levels of Co2+ ions in a tetragonal crystal eld [20]: 4A2 ! 4T1(4P) and 4A2 ! 2E(2G) transitions. A debate as to whether these dilute oxide hightemperature ferromagnets are truly homogeneous and single-phase is ongoing. Here, we have shown that cobalt does enter the ZnO structure as Co2+ rather than forming metallic clusters, and that no secondary phases are observed by X-ray diffraction or scanning electron microscopy. The recent model proposed to explain ferromagnetism in dilute n-type magnetic semiconductors [18] suggests that the exchange is mediated by carriers in a spinsplit impurity band derived from extended donor orbitals. In conclusion, we have found that thin lms of Zn1xCoxO are ferromagnetic and semiconducting at room temperature, with a moment that drops sharply with increasing cobalt concentration. Room temperature resistivity is 200 V cm. The cobalt-doped ZnO lms appear to be homogeneous and single-phase materials, where cobalt enters the ZnO structure as Co2+ rather than forming metallic clusters. The large moments at low x are incompatible with any known impurity phase.

Acknowledgement This work was supported by Science Foundation Ireland.

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C.B. Fitzgerald et al. / Applied Surface Science 247 (2005) 493496 [11] P.V. Radovanovic, D.R. Gamelin, Phys. Rev. Lett. 91 (2003) 157202. ` rt, D. Ferrand, Science [12] T. Dietl, H. Ohno, F. Matsukura, J. Cibe 287 (2000) 1019. [13] Z.-W. Jin, T. Fukumura, K. Hasegawa, et al. J. Cryst. Growth 548 (2002) 237239. [14] S.-W. Lim, D.-K. Hwang, J.-M. Myoung, Solid-State Commun. 125 (2003) 23. [15] N. Jedrecy, H.J. von Bardeleben, Y. Zheng, J.L. Cantin, Phys. Rev. B 69 041308 (2004). [16] F. Matsukura, H. Ohno, A. Shen, Y. Sugawara, Phys. Rev. B 57 (1998) R2037. [17] J.M.D. Coey, M. Viret, S. von Molnar, Adv. Phys. 48 (1999) 167. [18] J.M.D. Coey, M Venkatesan and C.B. Fitzgerald, Nature Materials, in press. [19] J. Diouri, J.P. Lascaray, M. El Amrani, Phys. Rev. B 31 (1985) 7995. [20] P. Koidl, Phys. Rev. B 15 (1977) 2493.

References
[1] H. Ohno, Science 281 (1998) 951. [2] K. Ueda, H. Tabata, T. Kawai, Appl. Phys. Lett. 79 (2001) 988. [3] Y.M. Cho, W.K. Choo, H. Kim, D. Kim, Y.E. Ihm, Appl. Phys. Lett. 80 (2001) 3358. [4] H.J. Lee, S.Y. Jeong, C.R. Cho, C.H. Park, Appl. Phys. Lett. 81 (2002) 4020. [5] K. Rode, A. Anane, R. Mattana, J.P. Contour, et al. J. Appl. Phys. 93 (2003) 7676. [6] W. Prellier, A. Fouchet, B. Mercey, C. Simon, B. Raveau, Appl. Phys. Lett. 82 (2003) 3490. [7] D.P. Norton, M.E. Overberg, S.J. Pearton, K. Preusser, et al. Appl. Phys. Lett. 83 (2003) 5488. [8] K. Ando, H. Saito, Z-W. Jin, T. Kukumura, et al. Appl. Phys. Lett. 78 (2001) 2700. [9] H. Saeki, H. Tabata, T. Kawai, Solid-State Commun. 120 (2001) 439. [10] P. Sharma, A. Gupta, K.V. Rao, F.J. Owens, R. Sharma, R. Ahuja, J.M. Osorio Guillen, B. Johansson, G.A. Gehring, Nature Mater. 2 (2003) 673.