Solutions

9.1 From [eqn 8.17],

en c g Fn
ep c g Fp
N = N exp -(E -E )/kT
N = N exp -(E -E )/kT
where E
Fn
, E
Fp
are the Fermi levels in the n- and p-type materials
respectively; N
c
is a constant given by [eqn 8.18].
Divide the two equations to get
en ep Fn Fp
N /N = exp (E -E )/kT
However, the 'built-in' voltage = difference in Fermi level/e
Hence,
en
0 Fn Fp
ep
N kT
U = (E -E )/e = log (Q.E.D.)
e N
Similarly, for holes, from [eqn 8.20]

( )
( )

hn v Fn
hp v Fp
N = N exp -E /kT
N = N exp -E /kT
\
hp
0 Fn Fp
hn
kT
e
N
U =(E -F )/e= log (Q.E.D.)
N
9.2 At thermal equilibrium, J
e
= 0
\
e
e e e
dN
e N +eD =0
dx

e e
e e
D dN
N
- dx = (1)
Integrate across the transition region.
R.S. of eqn (1) gives
e
en ep
e
D
log(N /N )

where N
en
, N
ep
are the electron
densities beyond the transition region in the n-type and p-type
materials respectively.
Note that -

dx across the transition region is the built-in

voltage.
Thus
e en
0
e ep
D N
U = log (Q.E.D.)
N
Similarly, by taking J
h
= 0, we obtain

hp
h
0
h hn
N
D
U = log
N
By comparing the results with that in Ex 9.1, we get
=
m m
e h
e h
D D kT
=
e
which is the Einstein relationship. (Q.E.D.)
Eliminate from the expressions of J
e
and J
h
, and note that J
e
and J
h
are separately zero,
\
e e h h
e e h h
D dN D dN
=-
N N
But D
e
/m
e
= D
h
/m
h
\
e h
e h
dN dN
+ =0
N N
e h e h
log N +log N =constant or N N =constant (Q.E.D.)
9.3 The density gradient of impurities implies a spatially varying
electron density and a resulting diffusion current. Therefore s =
N
e
em
e
. At thermal equilibrium, conduction current = diffusion current,
\
e
e e e
dN
N e =-eD where is the local electric field
dx

e e
e e
D dN
N
- dx =
Integrate across the semiconductor,
\ the built-in voltage
e e2
0
e e1
D N
U = log
N
where N
e1
, N
e2
are the
electron densities at the low and high impurity ends respectively.
Rearrange to get
e1 e e2 e 0 e e
N e = N e exp(-U /D )
\
1 2 0
= exp(-U e/kT) (from the Einstein relationship)
or

-19 -23
1
=10 exp 0.1251.610 /(1.3810 293) m =1.4 km
9.4 In the semiconductor (see Fig S9.1)
2
D
2
s 0
eN d U
=- (Poisson's equation)
dx

Integrate once,
D
0
s 0
eN dU
=- =- x+
dx
where

is the electric field at

the insulator-semiconductor boundary.
Suppose the width of the depletion region is x
n
. Then at x = x
n
, is
zero because there is no charge imbalance to the right of x
n
.
Fig. S9.1 The metal-insulator-semiconductor junction.
Hence
D
0 n
s 0
eN
=- x .

The potential difference across the semiconductor is

( )

n
x
2
2 2 D D n
n n
s 0 s 0 0
eN eN x
- dx = - x /2-x =
2

The electric field in the insulator is

\ the potential drop across it
D n
s i 0 i i
i 0
eN x
=( / ) d = d

So the total voltage drop

2
D n D n
0 i
i 0 s 0
eN x eN x
= U = d +
2
\
2 s i s 0 0
n n
i D
2 d 2 U
x + x - =0
eN
giving

1/2
2 2
n s i i s i i s 0 0 D
x =-( / )d + ( / )d +2 U /eN
9.5 (i) When d < d
0
, the space charge density is given by

D
0
2eN
x for 0 < x < d/2
d =
0 for x > d/2
\ the electric field

2 2
D 0
= / dx = x -(d/2) eN /d
Thus the 'built-in' voltage

d/2
3
0 D 0
0
U =-2 dx = eN d /6d ( by symmetry,
the voltage drop from d/2 to 0 is the same as that from 0 to d/2)
Hence [ ]
1/3
0 0 D
d = 6U d /eN
(ii) When d > d
0
,

D 0
D 0 0
0 for x > d/2
= eN for d /2<x < d/2
(2eN /d )x for 0 < x < d /2
( )

\
D 0
2 2 D
0 D 0 0
0
= / dx
eN(x-d/2)/ for d /2 < x < d/2
= eN
x -(d /2) +eN(d -d)/2 for 0 < x < d /2
d

Note that the integration constants are determined by

(i) the electric field at x = d/2 is zero
(ii) matching the electric field at x = d
0
/2
( )

0
0
d/2
0
0
d /2 d/2
2 2 D 0 D D
0
0 0 d /2
2 2 D
0
U
Thus =- dx
2
eN(d -d) eN eN
=- x -(d /2) + dx - (x-d/2) dx
d 2
eN
= d /8-d /24

or
( )
1/2
2
0 D 0
d = 4U /eN +d /3
9.6 Since
2
en n e hp p h hn en i
N = /e , N = /e and N N = N (1)
and from the expression given in Ex 9.1,



hp p n
0 2 2
hn i e h
N
kT kT
U = log = log
e N e N e
Substitute the values into the expression,

0
0.35 V for Ge
U = (taking room temperature as 293 K)
0.77 V for Si
9.7 The density of holes will increase from the equilibrium density
by a factor of exp eV/kT when a forward bias voltage V is applied,
i.e.
h, injected hn
2
i e
n
19 -3
N = N exp eV/kT
N e
= exp eV/kT (from eqn (1) of Ex 9.6)

=1.8110 m

Similarly,
2
16 -3 i h
e, injected ep
p
N e
N = N exp eV/kT = exp eV/kT = 8.5510 m

9.8 (i) [ ]
+
D D D
N = N 1-F(E )
Now
+
D D
N = N
[ ] \
-1
D D F
= 1 -F(E )=1- 1 + exp(E -E )/kT
\
D F

exp(E -E )/kT =
1-
or



F D
1-
E -E =kT log

(ii)
-
A A A
N = N F(E )
But
-
A A
N = N ,
[ ] \
-1
A A F
= F(E )= 1+exp(E -E )/kT
or
A F
1-
exp(E -E )/kT =

F A

E -E =kT log
1-
(iii) the 'built-in' voltage = difference in the Fermi levels

\


D A
1-
E +kT log - E +kT log
1-

\


1-0.5 0.05
1.05 = 1.1 + kT log -0.1-kT log
0.5 1-0.05
giving T = 197 K
9.9 From [eqns 9.5 and 9.6],

A
p
D
n
eN
- (x-x ) in the p-region

=
eN
(x-x ) in the n-region

\
A D
max p n
eN eN
= x = x

or
max
p
A

x =
eN

and
max
n
D

x =
eN

From [eqn 9.8],

( )
2 2
0 A p D n
e
U = N x +N x
2

\


2
max
0
A D
1 1
U = +
2e N N
(1)

-12 7 2
-23 -22
-19
168.8510 (210 )
= (10 +10 )=19.47 V
2(1.610 )
9.10 The continuity equation is

h h hn
p
N N -N 1
=- -
t e
where J is the current density vector.
Now the diffusion current dominates, therefore

h
h h
N
J -eD
x
Assume that

=0,
t

2
hn h h
h 2
p
N -N N
0= +D
x
yielding

1/2 1/2
h hn h p h p
N -N = A exp -x/(D ) +B exp x/(D )
where A, B are constants.
When
h hn
x , N N , therefore B = 0
At x = 0 (chosen to be in the n-type material, at the end of the
transition region), N
h
= injected hole density = N
hn
exp(eU
1
/kT).
Hence [ ]


1/2
h hn hn 1 h p
N -N = N exp eU /kT-1 exp -x/(D )
9.11 From the result of Ex 9.10, the injected hole density is reduced
by a factor of e when
-6
h p
x = D = (0.004420010 ) m = 0.94 mm
9.12 Neglect the conduction current,