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K814P/K824P/K844P

Vishay Semiconductors

Optocoupler, Phototransistor Output, AC Input


FEATURES
Endstackable to 2.54 mm (0.1") spacing DC isolation test voltage VISO = 5000 VRMS Low coupling capacitance of typical 0.3 pF Current transfer ratio (CTR) of typical 100 % Low temperature coefficient of CTR Wide ambient temperature range
C E

Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
1

Feature phones
C 8 PIN 16 PIN

4 PIN

Answering machines PBX Fax machines

17220_2

AGENCY APPROVALS
UL1577, file no. E76222 system code U, double protection C-UL CSA 22.2, bulletin 5A

DESCRIPTION
The K814P/K824P/K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.

ORDER INFORMATION
PART K814P K824P K844P REMARKS CTR > 20 %, single channel, DIP-4 CTR > 20 %, dual channel, DIP-8 CTR > 20 %, quad channel, DIP-16

ABSOLUTE MAXIMUM RATINGS


PARAMETER INPUT Forward current Forward surge current Power dissipation Junction temperature OUTPUT Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature

(1)

TEST CONDITION

SYMBOL IF

VALUE 60 1.5 100 125 70 7 50 100 150 125

UNIT mA A mW C V V mA mA mW C

tP 10 s

IFSM Pdiss Tj VCEO VECO IC

tp/T = 0.5, tp 10 ms

ICM Pdiss Tj

Document Number: 83523 Rev. 2.0, 09-Jan-08

For technical questions, contact: optocoupler.answers@vishay.com

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K814P/K824P/K844P
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input
(1)

ABSOLUTE MAXIMUM RATINGS


PARAMETER COUPLER AC isolation test voltage (RMS) Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature (3)

TEST CONDITION t = 1.0 min

SYMBOL VISO (2) Ptot Tamb Tstg

VALUE 5000 250 - 40 to +100 - 55 to + 125 260

UNIT VRMS mW C C C

2 mm from case, t 10 s

Tsld

Notes (1) T amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Related to standard climate 23/50 DIN 50014. (3) Refer to wave profile for soldering conditions for through hole devices.

ELECTRICAL CHARACTERISTICS
PARAMETER INPUT Forward voltage Reverse current OUTPUT Collector emitter voltage Emitter collector voltage Collector dark current COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance IF = 10 mA, IC = 1 mA IF = 10 mA, VCE = 5 V, RL = 100 f = 1 MHz VCEsat fc Ck 100 0.3 0.3 V kHz pF IC = 100 A IE = 100 A VCE = 20 V, IF = 0, E = 0 VCEO VECO ICEO 70 7 100 V V nA IF = 50 mA VR = 6.0 V VF IR 1.25 1.6 10 V A TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Note Tamb = 25 C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

CURRENT TRANSFER RATIO


PARAMETER IC/IF TEST CONDITION VCE = 5 V, IF = 5 mA PART K814P SYMBOL CTR MIN. 20 TYP. MAX. 300 UNIT %

SWITCHING CHARACTERISTICS
PARAMETER Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time TEST CONDITION VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 10 mA, RL = 1 k (see figure 1) VS = 5 V, IC = 10 mA, RL = 1 k (see figure 1) SYMBOL td tr tf ts ton toff ton toff MIN. TYP. 3.0 3.0 4.7 0.3 6.0 5.0 9.0 18.0 MAX. UNIT s s s s s s s s

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For technical questions, contact: optocoupler.answers@vishay.com

Document Number: 83523 Rev. 2.0, 09-Jan-08

K814P/K824P/K844P
Optocoupler, Phototransistor Output, AC Input

Vishay Semiconductors

IF 0 IC

tp

IF 0 RG = 50 tp = 0.01 T tp = 50 s

IF

+5V IC = 2 mA; adjusted through input amplitude

100 % 90 %

10 % 0

Channel I Channel II 50
13343

100

Oscilloscope RL > 1 M CL < 20 pF

tr td t on
Pulse Duration Delay Time Rise Time Turn-on Time

ts

tf t off

t
Storage Time Fall Time Turn-off Time

tp td tr t on (= t d + tr)
96 11698

ts tf t off (= ts + tf)

Fig. 1 - Test Circuit, Non-Saturated Operation

Fig. 3 - Switching Times

IF 0 RG = 50 tp = 0.01 T tp = 50 s

IF = 10 mA

+5V IC

Channel I Channel II 50
13344

Oscilloscope RL > 1 M CL < 20 pF

1k

Fig. 2 - Test Circuit, Saturated Operation

TYPICAL CHARACTERISTICS
Tamb = 25 C, unless otherwise specified

Ptot - Total Power Dissipation (mW)

300 250 200 Phototransistor 150 100 50 0 0 40 80 120 IR-diode

1000

IF - Forward Current (mA)

Coupled device

100

10

0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862

96 11700

Tamb - Ambient Temperature (C)

VF - Forward Voltage (V)

Fig. 4 - Total Power Dissipation vs. Ambient Temperature

Fig. 5 - Forward Current vs. Forward Voltage

Document Number: 83523 Rev. 2.0, 09-Jan-08

For technical questions, contact: optocoupler.answers@vishay.com

www.vishay.com 3

K814P/K824P/K844P
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input

CTRrel - Relative Current Transfer Ratio

2.0 VCE = 5 V IF = 5 mA 1.5

100

IC - Collector Current (mA)

20 mA IF = 50 mA 10 10 mA 5 mA 2 mA 1 mA 0.1

1.0

0.5

0 - 25

25

50

75

0.1
95 10985

10

100

95 11025

Tamb - Ambient Temperature (C)

VCE - Collector Emitter Voltage (V)

Fig. 6 - Relative Current Transfer Ratio vs. Ambient Temperature

Fig. 9 - Collector Current vs. Collector Emitter Voltage

10000

1.0

ICEO - Collector Dark Current, with Open Base (nA)

VCEsat - Collector Emitter Saturation Voltage (V)

1000

VCE = 20 V IF = 0

20 % used 0.8 CTR = 50 % used 0.6

100

0.4 0.2 10 % used 0 1 10 100

10

1 0
95 11026

25

50

75

100
95 11028

Tamb - Ambient Temperature (C)

IC - Collector Current (mA)

Fig. 7 - Collector Dark Current vs. Ambient Temperature

Fig. 10 - Collector Emitter Saturation Voltage vs. Collector Current

IC - Collector Current (mA)

VCE = 5 V 10

CTR - Current Transfer Ratio (%)

100

1000 VCE = 5 V 100

10

0.1

0.01 0.1
95 11027

10

100

1 0.1

10

100

IF - Forward Current (mA)

95 11029

IF - Forward Current (mA)

Fig. 8 - Collector Current vs. Forward Current

Fig. 11 - Current Transfer Ratio vs. Forward Current

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For technical questions, contact: optocoupler.answers@vishay.com

Document Number: 83523 Rev. 2.0, 09-Jan-08

K814P/K824P/K844P
Optocoupler, Phototransistor Output, AC Input

Vishay Semiconductors

ton/toff - Turn-on/Turn-off Time (s)

ton/toff- Turn-on /Turn-off Time (s)

50 Saturated Operation VS = 5 V RL = 1 k

10 Non-Saturated Operation VS = 5 V RL = 100

40 30

8 6

ton

toff 20 10 0 0 5 10 15 ton 20

toff 4 2 0 0 2 4 6 8

95 11031

IF - Forward Current (mA)

95 11030

IC - Collector Current (mA)

Fig. 12 - Turn-on/Turn-off Time vs. Forward Current

Fig. 13 - Turn-on/Turn-off Time vs. Collector Current

PACKAGE DIMENSIONS in millimeters


< 4.75 3.6 0.1 4.4 0.2 4.5 0.2 6.3 0.1 7.62 nom.

0.53 0.05 9 0.8 1.32 0.05 2.54 nom. E. g.: Special features: endstackable to 2.54 mm (0.100") spacing 4 3

3.3

0.25 0.0

Weight: ca. 0.25 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board

1 2 2.54 2.54
14789

technical drawings according to DIN specifications

Document Number: 83523 Rev. 2.0, 09-Jan-08

For technical questions, contact: optocoupler.answers@vishay.com

www.vishay.com 5

K814P/K824P/K844P
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input
< 20 4.4 0.2 19.7 0.2 3.6 0.1

7.62 nom. 6.3 0.1

3.3

0.25 0.0

0.53 0.05 9 0.8 2.54 nom. 7 x 2.54 = 17.78 1.32 0.05 Weight: ca. 1.08 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board

16 15 14 13 12 11 10 9

technical drawings according to DIN specifications

14783

< 9.8 4.4 0.2 9.5 0.2 3.6 0.1

7.62 nom. 6.3 0.1

0.25 0.0
3.3

0.53 0.05 1.32 0.05 2.54 nom. 3 x 2.54 = 7.62 8 7 6 5 Weight: ca. 0.55 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board
technical drawings according to DIN specifications

9 0.8

14784

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For technical questions, contact: optocoupler.answers@vishay.com

Document Number: 83523 Rev. 2.0, 09-Jan-08

K814P/K824P/K844P
Optocoupler, Phototransistor Output, AC Input
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

Vishay Semiconductors

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 83523 Rev. 2.0, 09-Jan-08

For technical questions, contact: optocoupler.answers@vishay.com

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Legal Disclaimer Notice


Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 Revision: 08-Apr-05

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