Detailed Solutions: Electronics Engg

Detailed Solutions
of
GATE-2014
Morning Session 16th Feb, 2014
Electronics Engg.
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Expert Opinion
D
B. Singh (Ex. IES) CMD, MADE EASY Group
ear Students, The Questions of GATE 2014 : EC are based on fundamental and basic concepts of the syllabus. There is no ambigu-
ity and misprint noticed till now, however, it is an observation based on students feedback. The level and standard of GATE 2014 questions are relatively easier than the exam of GATE 2013. There are 3 important observations made by me about GATE 2014 exam.
1.
The GATE exam 2014 has been conducted in 4 seatings. The questions were different in each session and difficulty level of questions were also different from session to session. The papers of 15th Feb. evening and 16th Feb. morning session were relatively easier than rest two sessions, however it varies on the perception of person to person also.
The average marks on all the papers should be equated and necessary scaling criteria should be adopted for this purpose.
2.
The GATE 2014 cut off is expected to be slightly higher than previous year. The cut-off may vary between 27-30 marks (General Category). Total Marks obtained by all the candidates GATE Cutoff = Total number of candidates GATE cutoff < | 25 Marks
3.
In my opinion the toppers marks of GATE-2014 would be between 85 to 90 marks.

If you have more questions (except from this paper) of GATE 2014 : EC, then kindly mail it to: madeeeasydelhi@gmail.com Note: Please do mention name, mobile no, date & session of exam, while sending the mail. You may also submit directly (in handwritten format) at MADE EASY Kalu Sarai Office. Dear Students, MADE EASY has taken due care in collecting the data and questions. Since questions are submitted by students and are memory based, therefore the chances of error can not be ruled out. Therefore MADE EASY takes no responsibility for the errors which might have incurred.
Note
Disclaimer
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GATE-2014 Exam
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Page 1
Gate 16th Feb Morning Q.1 Consider the multiplexer based logic ckt. Find the boolean function = ?
0 MUX 1 1 0 MUX f
(a) f = wS1S2 (c) f = w + S1 + S2 Solution: (d)
(b) f = wS1 + wS2 + S1S2 (d) w S1 S2
s1 0 1
f = s1 f1 + s1 f 1 f = f1 s1 f1 = w s2 Q.2
f f1 s1 f1 f 1 s1 f 1
f = w s1 s2
find the current I in the following branch.

5 5
10 V
1A
10
Solution: (0.75 A)
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GATE-2014 Exam
Page 2
Q.3
A series Rc circuit is connected to DC voltage source at time t0 = 0. The relation between the source voltage Vs, the resistance R, the capacitance C, the current i(t) is below: Vs = Ri(t) +
i(t)
1 i(t)dt. Which one of the following i(t) represents C 0

i(t)
(a)
(b)
t i(t) i(t)
(c)
(d)
Solution: (a) Q.4 Find the resistance R1 from y network

R1 5 3
Solution: (10) R1 = 5 + 3 +
53 = 10 7.5
7.
GATE-2014 Exam
Page 3
Q.5
Find the next number of the given sequence 84, 54, 36, 24, ___?___.
Solution: (18) Q.6 advice is (a) noun (c) both (b) verb (d) proverb
Solution: (a) Q.7 VBE = 0.7 V, VCE sat = 0.2 V, = 50, then find the value of Rc
10 V Rc = ? 50 k
50
(a) 100 , saturation region (c) 200 k, cutoff region Solution: (d) Q.8
(b) 300 , saturation region (d) 120 , active region
Find the steady state error for given system for unit step input
R(s) e SS k=4 1 s+1 C(s)
s+1 s+2
Solution: (1/3) Q.9

D D latch Q Q Q D latch Q Q
CLK
Current option is (a) Jk flip-flop (c) D flip-flip Solution: (d)

(b) SR flip-flop (d) Master-slave arrangement
GATE-2014 Exam
Page 4
Q.10 A fm modulated signal is given Sfm (t) = 10 cos(2 fc t + 1 sin f1t + 2 sin f2t) then the maximum frequency deviation (a) 1f1 + 2f2 (c) 1 + 2 Solution: (a) Q.11 If A modulate signal S(t) = m(t) Cos 40000t is given and m(t) does not contain frequency component more then 5 kHz, then find the minimum sampling frequency for proper reconstruction of signal. Solution: (25 kHz) Q.12 A PCM system have impure sin 100t + cos 100t and sampled at Nequist sampling rate and the modulated step size = 0.75 then find the maximum bit rate (bits/sec) Solution: (200 bits) Q.13 Find the output (b) 1f2 + f2f1 (d) none of these
I0 I1
I0 I1
V CC
I2 I3 x I2 I3
y = ______. (a) w x y + w x y (c) w x y + x w y + x yw Solution: (b)
(b) w x y + w x y (d) none
Q.14 In a semiconductor (Si) the donor and accenptor concentrations are 1 1016 and 5 1018/cm3 respectively at temperature 300 k, VT = 26 mV then the voltage at equilibrium condition. Solution: (0.8589 V) Q.15 For a air filled rectangular wave guide have diamention 5 cm 3 cm then find the cutoff frequency of the wave guide in (MHz) for TE21 mode. Solution: (78.1024 MHz)
GATE-2014 Exam
Page 5
Q.16 For given pnp transistor VBE = 0.7, = 50, find the output voltage
4k V0
530 k 10 V
V0 = _____. Solution: (3.4 V) Q.17 For a function x(t) the energy function is S(f), then find the energy function for input x(2t + 1)
f jf (a) S e 2
(b) (d)
1 f jf S e 2 2 1 f if S e 2 2
(c)
1 f S 2 2
Solution: (c) Q.18 Given H1(z) = (1 az1)1 and H2(z) = (1 Bz1)1, H(z) = H1(z) + rH2(z) where a, b and r are real number and also a = the z = 1. r = _____. Solution: (2) Q.19 Find the V0
3R R V1 2R V2 + R V0
1 1 ,b = , then find the value of r if zero of H(z) lies on 4 2
(a) (c)
5 V1 3V2 2 3 7 V1 V2 2 2
5 V2 2 11 V2 (d) 3V1 + 2
(b) 2V1
Solution: (d)
GATE-2014 Exam
Page 6
Q.20 For the N-Network is given C = 100 F, R = 10 k

C + +
Vi
V0
if Two such ckt are cascade then find the response of the system
V1
V2
V3
S (a) S +1 1
(b)
S2
(S + 1)2
S
(c)
( S + 1)
(d)
(S + 1)2
Solution: (b) Q.21 In p-type semiconductor if uniformly light is distributed than the recombination rate is directly proportional to (a) Excess minority carriers (b) Minority carries life time (c) Excess majnity carries (d) Majnity carries Solution: (a) Q.22 Transconductance characteristics depends on (a) high input resistance and high output resistance (b) high input resistance and low output resistance (c) Low input resistance and high output resistance (d) Low input and low input resistance Solution: (a)
GATE-2014 Exam
Page 7
Q.23 f(x) = 2x3 9x2 + 12 x 3; 2 x 3 What will be maximum value of f(x) in the interval. Solution: (6) Q.24
R(s)
G1 +
G2
C(s)
Overall transfer fxn: (a) G1G2 + G2 + 1 (C)

G1 G2 +1 G1 G2
(b) G2G2 + G1 + 1 (b)

G1 G2 1 G1 G2
Solution: (a) Q.25 Match thefollowing ListI A. Solution of Integration B Solution of transcendental equation C. Solution of differential equation D. Solution of linear equation Solution: 1. Newton-Rapson method 2. Runge-kutta method 3. Gauss-Elimination method 4. Simpsons one third rule solution of transcendental equation solution of differential equation. solution of linear equation. solution of Integration List_II Newton-Raphson method Runge Kutta method Gauss Elimination method Simpsons one-third rule
1. 2. 3. 4.
z 1 a j = 1 for all if Re(b) 0, Q.26 For an Allpass system H(z) = where H e 1 bz 1
( )
Img (b) 0 then a equals. (a) b* (c)

1 b
(b) b (d)
1 b*
Solution: (a) a = b*
GATE-2014 Exam
Page 8
Q.27 For an LTI system the phase function is given by (f) = 2 (f fc) 2 fc.Where and are constants and fc is the center frequency of the sytem. The delay introduced by sytem is (a)
(b)
(c) Solution: (c) Group delay is given by =
(b)
1 1 d ( f ) = [ 2 ] 2 2 df
Group delay = Q.28 Let signal m(t) = cos(10t) + cos(30t) by sampled at 20 Hz and reconstruct using an ideal low pass filter having cut-off frequency of 20 Hz. The frequencies present in the reconstructed signal is/are (a) 5 Hz, 10 Hz and 15 Hz (b) 5 Hz, and 15 Hz only (c) 10 Hz only (d) None of these Solution: (b) fs = 20 Hz fm1 = 5 Hz and fm2 = 15 Hz Then, fs + fm1 = 25 Hz ; fs + fm2 = 35 Hz fs fm1 = 15 Hz ; fs fm2 = 5 Hz So, by using a filter of cut-off frequency 20 Hz only 5 Hz and 15 Hz components are present. Q.29 An analog voltage 0 to 8 V is quantized into 16 levels which is encoded with 4 bits. Then the maximum quantizatin error in volts is _____ Solution: (0.5) = =
Dynamic range 2n or L 8 8 = 4 16 2
= 0.5 V [Qe ] max =

= 0.25 V 2
GATE-2014 Exam
Page 9
Q.30 X
BSC
Y1
BSC
Y2
P (X = 1) = Solution: (2)
1 1 and cross-over probability is . Find the value of H(Y1) + H(Y2). 3 2
P(x = 1) =
1 2 and P(x = 0) = 3 3
and
1 H(Y1) = P ( Y1 ) log 2 P Y ( 1) 1 H(Y2) = P ( Y2 ) log P Y ( 2)
where, Similarly,
P(Y1 = 1) = P(Y1 = 0) =
1 1 2 1 1 + = 3 2 3 2 2
P(Y2 = 1) = P(Y2= 0) = Here H(Y1) + H(Y2) =
1 2
1 1 1 1 log 2 2 + log 2 2 + log2 2 + log 2 2 2 2 2 2
H(Y1) + H(Y2) = 2 bits Q.31 The PSD of random process is

6 10 (3000 f sx ( f ) = 0
f 3 kHz Otherwise
x(t) is DSB SC modulated with carrier c (t) = cos(14000t). The modulated signal is passed through a band pass filter with fc(center frequency) = 7 KHz and band width of 2 KHz. Then find the output power in watts ____________ Solution: (5)
GATE-2014 Exam
Page 10
3000 10
3 After DSB SC modulation
f(kHz)
1500 10
10
10
f(kHz)
Band pass filter figure having fc = 7 kHz and B.W. = 2 Hz

1
f (kHz)
After passing through BPF, the P SD is shown as

1500 10
6
1 1000 106
f(kHz)
1 6 6 3 3 Output power = 2 2 500 10 10 + 2 1000 10 10 2
Output power = 2 [0.5 + 2] = 5 watts Q.32 Consider a random process x(t) with PSD Sx(f). If another random process y(t) = x (2t 1), then PSD of Sy(t) in terms of Sx(f). (a) Sx ( f ) = (c) Sy ( f ) = Solution: (a) Power spectral density does not get affected by time shifting.
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1 f Sx 2 2 1 j f f e Sx 2 2
(b) Sy ( f ) = (d) Sy ( f ) =
1 jf e Sx ( f ) 2 1 jf f e Sx 2 2
GATE-2014 Exam
Page 11
Q.33 During MOSFET fabrication, the channel length is defined during the process of (a) Channel stop implantation (b) Polysilicon gate patterning (c) Oxide growth (d) None of these Solution: (b) Q.34 For the MOSFET M 1 shown in figure below. Assume V DD = 2V,
nCox = 100 W =2 , L
A and Vth = 0.5 V. The value of Vin (Volts) for which M1 switches from V2
saturation region to triode region.

VDD 10 k Vo
Vin
Solution: (1.5) For saturation ID = Kn (VGS Vt)2 ID = ID =

n Cox W ( VGS Vt )2 2 L 1 2 100 10 6 2 ( V0 ) 2
2 ID = 100 106 V0
...(i ) Now, KVL in outer loop we get VDD = ID 10 k + V0 From (i) and (ii ), we get 2 = 100 106 10 103 V02 + V0 V02 + V0 2 = 0 V0 = 1V VDS = VGS Vt V0 = Vin Vt Vin = 1.5 V ...(ii )
GATE-2014 Exam
Page 12
Q.35 The slope of ID versus VGS curve of n-channel MOSFET in linear region is 103/ at VDS = 0.1 V. For the same device neglecting channel length modulation, the slope of the
A ID versus VGS curve under saturation region is approximity in V _________.
Solution: (0.0707) We known that for linear region

2 VDS ID = K n ( VGS Vt ) VDS 2
ID VGS = KnVDS
10 3 = Kn 0.1
i.e. Kn = 102
Kn ( VGS Vt )2 2 Kn ( VGS Vt ) 2 Kn 2
and for saturation region ID =

ID = ID = VGS
So
ID = VGS
102 A = 0.0707 2 V
x + cos x sin ya y , curl of F will be _______. Q.36 A vector F is given by F = sin x cos ya
z ) Solution: ( cos(x y)a
Q.37 Which one of the given differential equation is non homogeneous, non linear. x and y are independent and dependent variable respectively (a)
dy + xy = 0 dx dy + xy = e y dx
(b)
dy + xy = e x dx dy +x=0 dx
(c)
(d)
Solution: (c)
GATE-2014 Exam
Page 13
Q.38 f(x) = l n (1 + x) x; x > 1 Maximum value of f (x) will be on what value of x _________. Solution: (0) Q.39 A fair coin is tossed infinite times then find the probability of 4th head occurs exactly at 10th times. Solution: (0.205) Q.40 A man swim 8 km/h in still water. He takes to 3 times time when her swim upstream compare to down stream then find the velocity of water in (km/h) Solution: (4) Q.41 What will be the number of the sequence 7G, 11K, 13M, ____ (a) 15 P (b) 17 Q (c) 17O (d) 15 Q Solution: (b) Q.42 100 bulbs produced by a company it having of 5 defective bulbs with it. For checking section verifies with by taking 4 bulbs at a time from 100 bulbs of there is any bulb is defective then it will be rejected otherwise it allow to marketing. The probability of getting non defective section of 100 bulbs is Solution: (0.95) Q.43 India is a land of rich heritage and cultural diversity, which of the following points corroborates this (a) In Indian cricket team, players are selected from more than 10 states (b) There are more than 25 languages and over 2000 dialects (c) India has 29 of states and 7 union tertiaries (d) India population has 1.1 million people Solution: (b)

Detailed Solutions: Electronics Engg

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Detailed Solutions

Write us at info@madeeasy.in | Phone: 011-45124612, 9958995830

In my opinion the toppers marks of GATE-2014 would be between 85 to 90 marks.

Super Talent Batches

Super Talent Batches

(Any of the following)

 Extra teaching hours In-depth coverage of subjects

(a) f = wS1S2 (c) f = w + S1 + S2 Solution: (d)

(b) f = wS1 + wS2 + S1S2 (d) w S1 S2

find the current I in the following branch.

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1 i(t)dt. Which one of the following i(t) represents C 0

Solution: (a) Q.4 Find the resistance R1 from y network

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(b) 300 , saturation region (d) 120 , active region

Solution: (1/3) Q.9

Current option is (a) Jk flip-flop (c) D flip-flip Solution: (d)

(b) SR flip-flop (d) Master-slave arrangement

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y = ______. (a) w x y + w x y (c) w x y + x w y + x yw Solution: (b)

(b) w x y + w x y (d) none

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1 1 ,b = , then find the value of r if zero of H(z) lies on 4 2

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Q.20 For the N-Network is given C = 100 F, R = 10 k

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Overall transfer fxn: (a) G1G2 + G2 + 1 (C)

(b) G2G2 + G1 + 1 (b)

z 1 a j = 1 for all if Re(b) 0, Q.26 For an Allpass system H(z) = where H e 1 bz 1

Img (b) 0 then a equals. (a) b* (c)

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(c) Solution: (c) Group delay is given by =

= 0.5 V [Qe ] max =

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1 1 and cross-over probability is . Find the value of H(Y1) + H(Y2). 3 2

1 H(Y1) = P ( Y1 ) log 2 P Y ( 1) 1 H(Y2) = P ( Y2 ) log P Y ( 2)

P(Y2 = 1) = P(Y2= 0) = Here H(Y1) + H(Y2) =

1 1 1 1 log 2 2 + log 2 2 + log2 2 + log 2 2 2 2 2 2

H(Y1) + H(Y2) = 2 bits Q.31 The PSD of random process is

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3 After DSB SC modulation

Band pass filter figure having fc = 7 kHz and B.W. = 2 Hz

After passing through BPF, the P SD is shown as

1 6 6 3 3 Output power = 2 2 500 10 10 + 2 1000 10 10 2

saturation region to triode region.

Solution: (1.5) For saturation ID = Kn (VGS Vt)2 ID = ID =

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Solution: (0.0707) We known that for linear region

and for saturation region ID =

z ) Solution: ( cos(x y)a

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Corporate Office: 44-A/1, Kalu Sarai, New Delhi-16

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Extra teaching hours In-depth coverage of subjects