PD - 94255

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features
Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. Very Tight Vce(on) distribution IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard D2Pak & TO-262 packages
C

IRG4BC10SD-S IRG4BC10SD-L
Standard Speed CoPack IGBT
VCES = 600V

G E

VCE(on) typ. = 1.10V

@VGE = 15V, IC = 2.0A

n-ch an nel

Benefits
Generation 4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing Lower losses than MOSFET's conduction and Diode losses

D2Pak IRG4BC10SD-S Max.

600 14 8.0 18 18 4.0 18 20 38 15 -55 to +150

TO-262 IRG4BC10SD-L Units

V

Absolute Maximum Ratings

Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.

V W C

300 (0.063 in. (1.6mm) from case)

Thermal Resistance
Parameter
RJC RJC RCS RJA RJA Wt

Min.

Typ.
0.50 2.0(0.07)

Max.
3.3 7.0 80 40

Units
C/W

Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount U Junction-to-Ambient (PCB Mount, steady state)V Weight

g (oz)

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1
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IRG4BC10SD-S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ

VCE(on)

VGE(th) VGE(th)/TJ gfe ICES VFM IGES

Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 600 Temperature Coeff. of Breakdown Voltage 0.64 Collector-to-Emitter Saturation Voltage 1.58 2.05 1.68 Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage -9.5 Forward TransconductanceT 3.65 5.48 Zero Gate Voltage Collector Current Diode Forward Voltage Drop 1.5 1.4 Gate-to-Emitter Leakage Current

Max. Units Conditions V VGE = 0V, IC = 250A V/C VGE = 0V, IC = 1.0mA 1.8 IC = 8.0A VGE = 15V V IC = 14.0A See Fig. 2, 5 IC = 8.0A, TJ = 150C 6.0 VCE = V GE, IC = 250A mV/C VCE = V GE, IC = 250A S VCE = 100V, IC =8.0A 250 A VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150C 1.8 V IC =4.0A See Fig. 13 1.7 IC =4.0A, TJ = 150C 100 nA VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. Typ. Max. Units 15 22 2.42 3.6 6.53 9.8 76 32 815 1200 720 1080 0.31 3.28 3.60 10.9 1.46 2.6 70 36 890 890 3.83 7.5 280 30 4.0 28 42 38 57 2.9 5.2 3.7 6.7 40 60 70 105 280 235 Conditions IC = 8.0A VCC = 400V See Fig. 8 VGE = 15V TJ = 25C IC = 8.0A, VCC = 480V VGE = 15V, RG = 100 Energy losses include "tail" and diode reverse recovery. See Fig. 9, 10, 18 IC = 5.0A TJ = 150C, See Fig. 10,11, 18 IC = 8.0A, VCC = 480V VGE = 15V, RG = 100 Energy losses include "tail" and diode reverse recovery. Measured 5mm from package VGE = 0V VCC = 30V See Fig. 7 = 1.0MHz TJ = 25C See Fig. 14 IF =4.0A TJ = 125C TJ = 25C See Fig. TJ = 125C 15 VR = 200V TJ = 25C See Fig. 16 di/dt = 200A/s TJ = 125C TJ = 25C See Fig. TJ = 125C 17

nC

ns

mJ mJ ns

mJ nH pF ns A nC A/s

Details of note Q through T are on the last page

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IRG4BC10SD-S/L
10.0 Duty cycle : 50% Tj = 125C Tsink = 90C Ta = 55C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 9.2W for Heatsink Mount Power Dissipation = 1.8W for typical PCB socket Mount

8.0

Load Current ( A )

6.0

60% of rated voltage

4.0

Ideal diodes

2.0

0.0 0.1 1 10 100

f , Frequency ( kHz )

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

100

TJ = 25 C  T  J = 150 C

I C , Collector-to-Emitter Current (A)

I C , Collector Current (A)

10

10

TJ = 150 C 

TJ = 25 C  V = 50V  5s PULSE WIDTH

CC 5s PULSE WIDTH 10 6 8 12

1 0.5

V = 15V  80s PULSE WIDTH

GE 1.0 1.5 2.0 2.5 3.0

VCE , Collector-to-Emitter Voltage (V)

VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

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IRG4BC10SD-S/L
16 3.00

VCE , Collector-to-Emitter Voltage(V)

V = 15V  80 us PULSE WIDTH

GE

Maximum DC Collector Current(A)

 I C = 16 A

12

2.50

2.00

 IC = 8 A

1.50

 IC = 4 A

0 25 50 75 100 125 150

1.00 -60 -40 -20

20

40

60

80 100 120 140 160

TC , Case Temperature ( C)

TJ , Junction Temperature ( C)

Fig. 4 - Maximum Collector Current vs. Case Temperature

Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature

10

Thermal Response (Z thJC )

D = 0.50 1 0.20 0.10 0.05 0.02 0.01

0.1


SINGLE PULSE (THERMAL RESPONSE)

0.01 0.00001


Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01


P DM t1 t2 1

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4BC10SD-S/L
500

400

C, Capacitance (pF)

Cies 

VGE , Gate-to-Emitter Voltage (V)


VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc

20


VCC = 400V I C = 8A

15

300

C oes
200

10

100

Cres 

0 1 10 100

0 0 5 10 15 20

VCE , Collector-to-Emitter Voltage (V)

Q G , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage

Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage

3.60

Total Switching Losses (mJ)

Total Switching Losses (mJ)

V CC = 480V V GE = 15V TJ = 25 C 3.55 I C = 8A

3.50

100


RG =100 Ohm VGE = 15V VCC = 480V

 IC = 16 A
10

 IC = 8 A  IC = 4 A
1

3.45

3.40

3.35

3.30 0 20 40 60 80 100

0.1 -60 -40 -20

20

40

60

80 100 120 140 160

RG , Gate Resistance RG , Gate Resistance (Ohm) ()

TJ , Junction Temperature ( C )

Fig. 9 - Typical Switching Losses vs. Gate Resistance

Fig. 10 - Typical Switching Losses vs. Junction Temperature

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IRG4BC10SD-S/L
15

Total Switching Losses (mJ)

I C , Collector Current (A)

8 12 16 20

RG TJ VCC 12 VGE

= 100 100 = 150 C = 480V = 15V

100


VGE = 20V T J = 125 oC

10

0 0 4

SAFE OPERATING AREA

1 1 10 100 1000

I C , Collector Current (A)

VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Collector Current

100

Fig. 12 - Turn-Off SOA

Instantaneous Forward Current ( A )

10

TJ = 150 C TJ = 125 C T = 25 C
J

0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0

F orward V oltage D rop -- V (V )) Forward Voltage Drop VFM ( V FM

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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IRG4BC10SD-S/L
50 14 VR = 20 0V T J = 1 25 C T J = 2 5 C

45

I F = 8.0A I F = 4.0A

12

I F = 8.0A
10

40

I F = 4.0A

trr- (nC)

Irr- ( A)

35

6 30 4

25 VR = 2 00 V TJ = 1 2 5C T J = 2 5 C 20 100 1000 2

di f /dt - (A/ s)

0 100

1000

di f /dt - (A/ s)

Fig. 14 - Typical Reverse Recovery vs. dif/dt

200 VR = 2 00 V T J = 1 25 C T J = 2 5 C 160

Fig. 15 - Typical Recovery Current vs. dif/dt

1000 VR = 20 0V T J = 1 25 C T J = 2 5 C

I F = 8.0A

I F = 8.0A

di (rec) M/dt- (A /s)

120

I F = 4.0A

I F = 4.0A

Qrr- (nC)
80 40

0 100

di f /dt - (A/ s)

1000

100 100

A 1000

di f /dt - (A/ s )

Fig. 16 - Typical Stored Charge vs. dif/dt

Fig. 17 - Typical di(rec)M/dt vs. dif/dt,

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IRG4BC10SD-S/L
Same ty pe device as D .U.T.

80% of Vce

430F D .U .T.
Vge VC 90% 10% 90%

t d(off)

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

10% IC 5% t d(on)

tr Eon E ts = (Eon +Eoff )

tf t=5s Eoff

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg

trr Ic

Q rr =

Ic dt
trr id d t tx V cc

tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic

1 0 % Irr

V pk Irr

D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 ce ieIc d t dt Vce E on = V t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4

E re c =

Vd Ic dt
t4 V d id d t t3

t1

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, td(on), tr

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining Erec, trr, Qrr, Irr

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IRG4BC10SD-S/L

V g G AT E SIG NA L DE VIC E U ND E R T E ST CU R RE NT D .U .T.

VO L TA G E IN D.U .T.

CU R RE NT IN D 1

t0

t1

t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L 1000V 50V 600 0F 100V Vc*

D.U.T.

RL= 0 - 480V

480V 4 X I C @25C

Figure 19. Clamped Inductive Load Test Circuit

Figure 20. Pulsed Collector Current Test Circuit

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IRG4BC10SD-S/L
D2Pak Package Outline

1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2

4 .6 9 (.18 5) 4 .2 0 (.16 5)

-B1.3 2 (.05 2) 1.2 2 (.04 8)

10 .1 6 (.4 00 ) R E F.

6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F.

1.7 8 (.07 0) 1.2 7 (.05 0)

3X

1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0)

0.9 3 (.0 37 ) 0.6 9 (.0 27 ) 0.25 (.0 10 ) M B A M

0.55 (.0 22) 0.46 (.0 18)

M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )

NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .

LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E

8 .89 (.35 0) 17 .78 (.70 0)

3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X

D2Pak Part Marking Information

A

IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E

PART NUM BER F530S 9 24 6 9B 1M

DATE CODE (Y YW W ) YY = Y E A R W W = W EEK

10

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IRG4BC10SD-S/L
TO-262 Package Outline

TO-262 Part Marking Information

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IRG4BC10SD-S/L
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.16 1 ) 3 .9 0 (.15 3 )
1.60 (.06 3) 1.50 (.05 9) 0.3 68 (.01 45 ) 0.3 42 (.01 35 )

F E ED D IR E C TIO N 1 .8 5 ( .0 7 3 )
1 .6 5 ( .0 6 5 )

1 1.60 (.457 ) 1 1.40 (.449 )

1 5.42 (.60 9) 1 5.22 (.60 1)

2 4.30 (.9 57 ) 2 3.90 (.9 41 )

TR L
10.90 (.42 9) 10.70 (.42 1) 1.75 (.0 69 ) 1.25 (.0 49 ) 1 6.10 (.6 3 4) 1 5.90 (.6 2 6) 4.72 (.1 36 ) 4.52 (.1 78 )

F E E D D IR E C T IO N

13.50 (.532) 12.80 (.504)

27.40 (1.079) 23.90 (.941)

4

33 0.00 (14.173) M A X.

60.00 (2.36 2) MIN .

N OT ES : 1. C O MF OR MS TO EIA-418. 2. C O NTR O LLIN G DIM EN SIO N: M ILLIM ET ER. 3. D IM ENSIO N M EAS UR ED @ HU B. 4. IN CLU D ES F LAN G E D ISTO RT IO N @ O UT ER ED GE.

26.40 (1.0 39) 24.40 (.96 1)

30.40 (1.197) M AX. 4

Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) RVCC=80%(VCES), VGE=20V, L=10H, RG = 100W (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot. U This only applies to TO-262 package. V This applies to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/01

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