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DATA SHEET

MOS FIELD EFFECT POWER TRANSISTORS

2SJ495
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.

PACKAGE DIMENSIONS
(in millimeter)
10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2

FEATURES
Super Low On-State Resistance
15.0 0.3 3 0.1 4 0.2

RDS(on)2 = 56 m MAX. (VGS = 4 V, ID = 15 A) Low Ciss Ciss = 4120 pF TYP. Built-in Gate Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25C)


Drain to Source Voltage Gate to Source Voltage* Gate to Source Voltage Drain Current (DC) Drain Current (pulse)** Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature *f = 20 kHz, Duty Cycle 10% (+Side) **PW 10 s, Duty Cycle 1% VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg 60 m20 20, 0 m30 m120 35 2.0 150 55 to +150 V V V A A W W C C
1 2 3 0.7 0.1 2.54

13.5 MIN.
2.5 0.1 0.65 0.1 1. Gate 2. Drain 3. Source Drain Body Diode Source

1.3 0.2 1.5 0.2 2.54

THERMAL RESISTANCE
Channel to Case Channel to Ambient Rth(ch-c) Rth(ch-A) 3.57 62.5 C/W C/W

MP-45F (ISOLATED TO-220)

Gate

Gate Protection Diode

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice acutally used, an addtional protection circiut is externally required if a voltage exceeding the rated voltage may be applied to this device.

Document No. D11267EJ2V0DS00 (2nd edition) Date Published November 1997 N Printed in Japan

12.0 0.2

RDS(on)1 = 30 m MAX. (VGS = 10 V, ID = 15 A)

1997

2SJ495
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Drain to Source Onstate Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss COSS Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 15 A VGS = 4 V, ID = 15 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 15 A VDS = 60 V, VGS = 0 VGS = m 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 15 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 30 A VDD = 48 V VGS = 10 V IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 di/dt = 100 A/s 4120 1750 580 40 220 600 380 140 12 46 0.8 160 400 1.5 1.0 12 MIN. TYP. 24 38 1.5 24 10 m10 MAX. 30 56 2.0 UNIT m m V S

A A
pF pF pF ns ns ns ns nC nC nC V ns nC

Test Circuit 1 Switching Time

Test Circuit 2 Gate Charge

D.U.T. RL VGS PG. RG RG = 10


Wave Form

VGS 10 % D ID VGS(on) 90 %

90 % PG. 90 %

D.U.T. IG = 2 mA 50

RL VDD

VDD

VGS 0 t t = 1 s Duty Cycle 1%

ID
Wave Form

10 % td(on) ton tr

ID

10 % tf toff

td(off)

2SJ495
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 35
dT - Percentage of Rated Power - % PT - Total Power Dissipation - W

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

100 80 60 40 20

30 25 20 15 10 5 0 20 40 60 80 100 120 140 160

20

40

60

80

100 120 140 160

TC - Case Temperature - C

TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 125

FORWARD BIAS SAFE OPERATING AREA 1000

ID(pulse)

VGS = 10 V

ID - Drain Current - A

ID - Drain Current - A

100

d ite ) Lim 0 V ( =1 S S R D VG t (a
) on

50

100 75 50 25 VGS = 4 V

ID(DC)

10 10 0

m m

10

Po

we

rD

iss

ipa

tio

DC

1 0.1

TC = 25C Single Pulse

Lim

ite

10

100

VDS - Drain to Source Voltage - V

VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed Tch = 25C 25C 125C

ID - Drain Current - A

100

10

1 VDS = 10 V 6 8

VGS - Gate to Source Voltage - V

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TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - C/W

100

Rth(ch-a) = 62.5C/W

10

Rth(ch-c) = 3.57C/W

0.1

0.01 Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1 000

PW - Pulse Width - s
RDS(on) - Drain to Source On-State Resistance - m

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT


| yfs | - Forward Transfer Admittance - S

1000

VDS = 10 V Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 150 Pulsed

100

Tch=25C 25C 75C 125C

100

10

50 ID = 15 A

1 1

10

100

1000

10

20

30

ID- Drain Current - A


RDS(on) - Drain to Source On-State Resistance - m

VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80


VGS(off) - Gate to Source Cutoff Voltage - V

Pulsed

2.0

VDS = 10 V ID = 1 mA

60 VGS = 4 V 40 VGS = 10 V 20

1.5

1.0

0.5

0 50 0 50 100 150 Tch - Channel Temperature - C

10 ID - Drain Current - A

100

2SJ495
RDS(on) - Drain to Source On-State Resistance - m

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 VGS = 4 V 60 VGS=-10 V 1000

SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed


ISD - Diode Forward Current - A

100 VGS = 4 V

40

10

VGS = 0

20 ID = 15 A 50 0 50 100 150

1 0 1.0 2.0 3.0

Tch - Channel Temperature - C

VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000


Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns

SWITCHING CHARACTERISTICS 1 000

VGS = 0 f = 1 MHz

10000 Ciss

100

td(off) tf

1000

Coss Crss

10

tr VDD = 30 V VGS = 10 V RG =10 10 100

td(on) 1 0.1 1

100 0.1

10

100

VDS - Drain to Source Voltage - V

ID - Drain Current - A

REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000


trr - Reverse Recovery Time - ns

di/dt = 50 A/ s VGS = 0
VDS - Drain to Source Voltage - V

60 VDD=48 V 30 V 15 V

100

VGS

12 10 8 6

40

10

20 VDS 0 40 80 120 160

4 2 0

1 0.1

10

100

IF - Diode Current - A

QG - Gate Charge - nC

VGS - Gate to Source Voltage - V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 ID = 30A 14

2SJ495
Document Name NEC semicondacter device reliabilty/quality control system Power MOS FET features and application to switching power supply Application circuits using Power MOS FET Safe operating area of Power MOS FET Guide to prevent damage for semiconductor devices by electrostatic discharge (EDS) Document No. C11745E D12971E TEA-1035 TEA-1037 C11892E

2SJ495
[MEMO]

2SJ495

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5