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BFG 235

NPN Silicon RF Transistor


 For low-distortion broadband output amplifier

stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA
 Power amplifiers for DECT and PCN systems  Integrated emitter ballast resistor  fT = 5.5 GHz

3 2 1
VPS05163

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type BFG 235


Maximum Ratings Parameter

Marking BFG235 1=E

Pin Configuration 2=B 3=E 4=C

Package SOT-223

Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg

Value 15 25 25 2 300 40 2 150 -65 ... 150 -65 ... 150

Unit V

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS  80 C F) Junction temperature Ambient temperature Storage temperature

mA W C

Thermal Resistance Junction - soldering point RthJS

 35

K/W

1T is measured on the collector lead at the soldering point to the pcb S

Oct-27-1999

BFG 235

Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 200 mA, VCE = 8 V hFE 50 120 250 IEBO 2 A ICBO 100 nA ICES 200 A V(BR)CEO 15 V Symbol min. Values typ. max. Unit

Oct-27-1999

BFG 235

Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 200 mA, VCE = 8 V, f = 200 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 60 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz Power gain, maximum available F) IC = 200 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Transducer gain f = 900 MHz IC = 200 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz Third order intercept point IP3 40 IC = 200 mA, VCE = 8 V, ZS = ZL = 50 , |S21e|2 6 Gma 12 F 2.7 Ceb 15 Cce 1.5 Ccb 2.6 3.6 fT 4 5.5 typ. max.

Unit

GHz pF

dB

dBm

1G ma

= |S21 / S12 | (k-(k2-1)1/2 )

Oct-27-1999

BFG 235

Total power dissipation Ptot = f (TA *, TS )


* Package mounted on epoxy

2200
mW

1800 1600

TS

P tot

1400 1200 1000 800 600 400 200 0 0 20 40 60 80 100 120 C 150

TA

TA,TS

Permissible Pulse Load RthJS = f (tp )

Permissible Pulse Load Ptotmax/P totDC = f (tp)

10 2

10 2

K/W

Ptotmax / PtotDC

10 1

10 1

10 0

0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0


10 0 -7 10

D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

RthJS

10 -1 -7 10

10

-6

10

-5

10

-4

10

-3

10

-2

10

10

-6

10

-5

10

-4

10

-3

10

-2

10

tp

tp

Oct-27-1999

BFG 235

Collector-base capacitance Ccb = f (VCB ) f = 1MHz

Transition frequency f T = f (I C)
V CE = Parameter

6.0
GHz

5V

pF

5.0 5 4.5

Ccb

1V

fT
4 3

4.0 3.5 3.0 2.5 2.0

0.7V

1 1.5 0 0
V

12

16

22

1.0 0

50

100

150

200

mA

300

VCB

IC

Power Gain Gma , Gms = f(IC )


f = 0.9GHz VCE = Parameter
13
dB 10V 5V 3V 2V

Power Gain Gma, Gms = f(I C)


f = 1.8GHz VCE = Parameter
9
dB 10V 5V

11

7 6
3V 2V

G
5 4

10

9
1V 1V

3 7 2
0.7V

6
0.7V

1 0 0

5 0

50

100

150

200

mA

300

50

100

150

200

mA

300

IC

IC

Oct-27-1999

BFG 235

Power Gain Gma , Gms = f(VCE):_____


|S21|2 = f(VCE):--------f = Parameter
14

Intermodulation Intercept Point IP3=f(IC)


(3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz
42 dBm
10V 8V

IC=200mA
0.9GHz

dB

36 10 34
5V

IP 3

32 30 28 26 24 22
2V 3V

1.8GHz 0.9GHz

20 18

16 14

1V

0 0

12

12 0

50

100

150

200

mA

300

VCE

IC

Power Gain Gma , Gms = f(f)


VCE = Parameter
30

Power Gain |S21|2= f(f)


V CE = Parameter
30

IC=200mA
dB

IC =200mA
dB

20

S21
10V 2V 1V 0.7V

20

15

15

10

10

10V 2V 1V 0.7V

5 -5

0 0.0

0.5

1.0

1.5

2.0

2.5

GHz

3.5

-10 0.0

0.5

1.0

1.5

2.0

2.5

GHz

3.5

Oct-27-1999

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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