Chapter 18 - 1

ISSUES TO ADDRESS...
How are electrical conductivity and resistivity characterized?
What electronic structure distinguishes
conductors, semiconductors, and insulators?
How is conductivity in metals affected by
impurities, temperature, and deformation?
How is conductivity in semiconductors affected
by impurities (doping) and temperature?
Chapter 18: Electrical Properties II:
Intrinsic & Extrinsic Semiconductors
Class 21 Chapter 18: Conductivity II Intrinsic & Extrinsic Semic - Topic #7.2
Chapter 18 -
Intrinsic Elemental vs. Compound Semiconductors
Elemental Semiconductors
Chapter 18 -
Conductivity in Semiconductors
Chapter 18 -
Conduction in Terms of Electron & Hole Migration
Adapted from Fig. 18.11,
Callister 7e.
electric field electric field electric field
Electrical Conductivity given by:
#electrons/m
3
electron mobility
#holes/m
3
hole mobility
h e
e p e n + = o
Concept of electrons and holes:
+
-
electron hole
pair creation
+
-
no applied applied
valence
electron
Si atom
applied
electron hole
pair migration
Chapter 18 -
Intrinsic Semiconductor Conductivity Increases with T
Chapter 18 - 6
Intrinsic Semiconductors: Conductivity vs T
and Also Plotted as ln Conductivity vs. 1/T
Data for Pure Silicon:
-- o increases with T
-- opposite to metals
material
Si
Ge
GaP
CdS
band gap (eV)
1.11
0.67
2.25
2.40
Selected values from Table 18.3,
Callister & Rethwisch 8e.

n
i
e
E
gap
/kT

o = n
i
e
e
+
h
( )
Data for Pure Silicon:
-- ln o decreases vs. 1/T
Chapter 18 - 7
Intrinsic:
-- case for pure Si
-- #electrons = #holes (n = p)
Extrinsic:
-- electrical behavior is determined by presence of impurities
that introduce excess electrons or holes
-- n p
Intrinsic vs Extrinsic Conduction
3+
p-type Extrinsic: (p >> n)
no applied
electric field
Boron atom
4+ 4+ 4+ 4+
4+
4+ 4+ 4+ 4+
4+ 4+
h
e p ~ o
hole
n-type Extrinsic: (n >> p)
no applied
electric field
5+
4+ 4+ 4+ 4+
4+
4+ 4+ 4+ 4+
4+ 4+
Phosphorus atom
valence
electron
Si atom
conduction
electron
e
e n ~ o
Adapted from Figs. 18.12(a)
& 18.14(a), Callister &
Rethwisch 8e.
Chapter 18 -
What Elements Make Si an n-type Extrinsic Semiconductor?
Majority carriers are electrons
Minority carriers are electron holes
Donor energy level
Chapter 18 -
How Does T Affect an n-type Semiconductor?
e e e e
Chapter 18 -
What Elements Make Si a p-type Extrinsic Semiconductor?
Majority carriers are electron holes
Minority carriers are electrons
Chapter 18 -
Activity - How Does T Affect a p-type Semiconductor?
Chapter 18 -
Activity Electrical Property Concept Questions
1. What will increase the conductivity of polycrystalline silicon?
1. decreasing temperature
2. increasing the grain size
3. decreasing the grain size
2. Will adding 1% As to silicon increase or decrease its conductivity?
1. Increase because the As will contribute electrons
2. Decrease because As scatters electrons
3. Increase because arsenic is a better conductor than silicon
4. Decrease because arsenic is a worse conductor than silicon
5. Decrease because As takes more thermal energy for the electrons to move
3. Electrical conductivity will decrease when :
1. a metal has impurities added
2. a semiconductor has impurities added
3. a metal has its temperature increased
4. a semiconductor has its temperature increased
5. a metal is annealed
4. The addition of boron (III) to silicon (IV):
1. provides donors
2. gives electron hole minority carriers
3. makes it n-type
4. makes it p-type
5. reduces the energy gap
Chapter 18 -
Summary of Band Gaps in Intrinsic vs Extrinsic Semic.
Chapter 18 -14
Extrinsic Semiconductors: Conductivity vs. Temperature
Data for Doped Silicon:
-- o increases doping
-- reason: imperfection sites
lower the activation energy to
produce mobile electrons.
Comparison: intrinsic vs
extrinsic conduction...
-- extrinsic doping level:
10
21
/m
3
of a n-type donor
impurity (such as P).
-- for T < 100 K: "freeze-out,
thermal energy insufficient to
excite electrons.
-- for 150 K < T < 450 K: "extrinsic"
-- for T >> 450 K: "intrinsic"
Adapted from Fig. 18.17, Callister & Rethwisch
8e. (Fig. 18.17 from S.M. Sze, Semiconductor
Devices, Physics, and Technology, Bell
Telephone Laboratories, Inc., 1985.)
C
o
n
d
u
c
t
i
o
n

e
l
e
c
t
r
o
n

c
o
n
c
e
n
t
r
a
t
i
o
n

(
1
0
2
1
/
m
3
)
T (K) 600 400 200 0
0
1
2
3
f
r
e
e
z
e
-
o
u
t
e
x
t
r
i
n
s
i
c
i
n
t
r
i
n
s
i
c
doped
undoped
Chapter 18 -15
Allows flow of electrons in one direction only(e.g., useful
to convert alternating current to direct current).
Processing: diffuse P into one side of a B-doped crystal.
-- No applied potential:
no net current flow.
-- Forward bias: carriers
flow through p-type and
n-type regions; holes and
electrons recombine at
p-n junction; current flows.
-- Reverse bias: carriers
flow away from p-n junction;
junction region depleted of
carriers; little current flow.
Building Block for Devices: p-n Rectifying J unction
+
+
+
+
+
-
-
-
-
-
p-type n-type
+ -
+
+
+
+
+
-
-
-
-
-
p-type n-type
Adapted from
Fig. 18.21
Callister &
Rethwisch
8e.
+
+
+
+
+
-
-
-
-
-
p-type
n-type
- +
Chapter 18 -16
p - n Rectifying J unction: AC to DC Conversion
Fig. 18.22, Callister & Rethwisch 8e. Fig. 18.23, Callister & Rethwisch 8e.
Silicon controlled rectifier
Chapter 18 -17
p - n Rectifying J unction: Avalanche Diode
Fig. 18.22, Callister & Rethwisch 8e.
Chapter 18 -18
For intrinsic semiconductors, conductivity is increased by
-- increasing temperature
For extrinsic semiconductors conductivity is increased by
-- doping by adding B (III) to Si (IV) (p-type)
-- doping by adding P to Si (n-type)]
p n junctions can be used to make devices such as
-- rectifiers to convert AC to DC current
-- avalanche diodes for surge protectors
Summary
Chapter 18 -
HW#21 Electrical Properties II: Intrinsic & Extrinsic Semiconductors
5. Explain how the avalanche diode in the surge protector plug-in outlet strip will
protect your computer from damage by the voltage surge.
Chapter 18 -
Points of Reflection on Todays Class
Please briefly describe your insights on the following points from todays class.
Point of Interest: Describe what you found most interesting in todays class.
How Interesting? (circle) Little Bit 1 2 3 4 5 Very Much
Muddiest Point: Describe what was confusing or needed more detail.
How Muddy? (circle) Little Bit 1 2 3 4 5 Very Much
Learning Point: Describe what you learned about how you learn?
Letter + 4 digit number ______________ F M
Class Topic: _______________________Date: ________________
20