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UNIT4:JFET
JunctionFieldEffectTransistor
TheFieldEffectTransistor(FET)
In 1945, Shockley had an idea for making a solid state device outofsemiconductors. Hereasonedthatastrongelectricalfieldcouldcausetheflow ofelectricitywithinanearbysemiconductor. Hetriedtobuildone,butitdidn'twork. Three years later, Brattain & Bardeen built the first working transistor,thegermaniumpointcontacttransistor,whichwas designedasthejunction(sandwich)transistor. In 1960 Bell scientist John Atalla developed a new design basedonShockley'soriginalfieldeffecttheories. By the late 1960s, manufacturers converted from junction typeintegratedcircuitstofieldeffectdevices.
TheFieldEffectTransistor(FET)
Field effect devices are those in which current is controlled by the action of an electron field, rather than carrierinjection. Fieldeffect transistors are so named because a weak electrical signal coming in through one electrode creates anelectricalfieldthroughtherestofthetransistor. TheFETwasknownasaunipolar transistor. The term refers to the fact that current is transported by carriers of one polarity (majority), whereas in the conventional bipolar transistor carriers of both polarities (majorityandminority)areinvolved.
Introduction(FET)
Fieldeffecttransistor(FET)areimportantdevicessuchas BJTs Alsousedasamplifierandlogicswitches TypesofFET:
JFET(junctionfieldeffecttransistor) DepletionmodeMOSFET EnhancementmodeMOSFET
WhatisthedifferencebetweenJFETandBJT?
Currentcontrolledamplifiers
Voltagecontrolledamplifiers
JunctionFETs (JFETs)
JFETs consistsofapieceofhighresistivity semiconductormaterial(usuallySi)which constitutesachannelforthemajoritycarrier flow. Conductingsemiconductorchannelbetween twoohmic contacts source&drain
JunctionFETs (JFETs)
Themagnitudeofthiscurrentiscontrolledbya voltageappliedtoagate,whichisareversebiased. ThefundamentaldifferencebetweenJFETandBJT devices:whentheJFETjunctionisreversebiasedthe gatecurrentispracticallyzero,whereasthebase currentoftheBJTisalwayssomevaluegreaterthan zero.
JunctionFETs
JFETisahighinputresistancedevice,whiletheBJTis comparativelylow. Ifthechannelisdopedwithadonorimpurity,ntype materialisformedandthechannelcurrentwill consistofelectrons. Ifthechannelisdopedwithanacceptorimpurity,p typematerialwillbeformedandthechannelcurrent willconsistofholes. Nchanneldeviceshavegreaterconductivitythanp channeltypes,sinceelectronshavehighermobility thandoholes;thusnchannelJFETs are approximatelytwiceasefficientconductors comparedtotheirpchannelcounterparts.
Introduction..(AdvantagesofFET)
Highinputimpedance(M) (LinearACamplifiersystem) Temperature stablethanBJT Verysmallinsize,occupiesverysmallspaceinICs,Smaller thanBJT Canbefabricatedwithfewerprocessing BJTisbipolar conductionbothholeandelectron FETisunipolar usesonlyonetypeofcurrentcarrier LessnoisecomparetoBJT Usuallyuseaslogicswitch SourceanddrainareinterchangeableinmostLowfrequency applications LowVoltageLowCurrentOperationispossible(Lowpower consumption) Nominoritycarrierstorage(Turnoffisfaster) Selflimitingdevice LowvoltagelowcurrentoperationispossibleinMOSFETS Zerotemperaturedriftofoutputispossible.
DisadvantagesofFET
EasytodamagecomparetoBJT ???
MOSFET (IGFET)
Enhancement MOSFET
n-Channel EMOSFET
Depletion MOSFET
n-Channel DMOSFET p-Channel DMOSFET
p-Channel EMOSFET
Junctionfieldeffecttransistor..
Thereare2typesofJFET
nchannel JFET pchannel JFET
ThreeTerminal
Drain D(Saliran) GateG(Get) Source S(Punca)
Junctionfieldeffecttransistor(JFET)
SYMBOLS
Drain Drain Drain
Gate
Gate
Gate
Source
BasicstructureofJFETs
Inadditiontothechannel,a JFETcontainstwoohmic contacts:thesource andthe drain. TheJFETwillconductcurrent equallywellineither directionandthesourceand drainleadsareusually interchangeable.
p+
Gate G
G
Circuit symbol for n-channel FET
Drain
S S G
D D p+
Metal electrode Insulation (SiO2) p
n-channel
p+
Depletion region n n-channel
Cross section n
p+
Depletion regions
n-channel
D
S
Channel thickness
(b)
p+
(a)
HowJFETFunction
Thegateisconnectedtothesource. Sincethepn junctionisreversebiased,littlecurrentwill flowinthegateconnection. Thepotentialgradientestablishedwillformadepletion layer,wherealmostalltheelectronspresentinthentype channelwillbesweptaway. Themostdepletedportionisinthehighfieldbetweenthe GandtheD,andtheleastdepletedareaisbetweentheG andtheS. Becausetheflowofcurrentalongthechannelfromthe (+ve)draintothe(ve)sourceisreallyaflowoffree electronsfromStoDinthentypeSi,themagnitudeofthis currentwillfallasmoreSi becomesdepletedoffree electrons.
HowJFETFunction
Thereisalimittothedrain current(ID)whichincreased VDS candrivethroughthe channel. Thislimitingcurrentisknown asIDSS (DraintoSourcecurrent withthegateshortedtothe source).
TheoutputcharacteristicsofannchannelJFETwiththe gateshortcircuitedtothesource. TheinitialriseinID isrelatedtothebuildupofthe depletionlayerasVDS increases. ThecurveapproachesthelevelofthelimitingcurrentIDSS whenID beginstobepinchedoff. Thephysicalmeaningofthistermleadstoonedefinition ofpinchoffvoltage,VP ,whichisthevalueofVDS at whichthemaximumIDSS flows.
WateranalogyfortheJFETcontrol mechanism
N-channel JFET
NchannelJFET:
Majorstructureisntypematerial(channel) between embeddedptypematerial toform2pn junction. Inthenormaloperationofannchanneldevice,theDrain(D) is positivewithrespecttotheSource(S). Currentflowsintothe Drain(D),throughthechannel,andoutoftheSource(S) Becausetheresistanceofthechanneldependsonthegateto sourcevoltage(VGS), thedraincurrent(ID) iscontrolledbythat voltage
Nchannel JFET
Thistransistorismadeby formingachannelofN typematerialinaPtype substrate. Threewiresarethen connectedtothedevice. Oneateachendofthe channel. Oneconnectedtothe substrate. Inasense,thedeviceisa bitlikeaPNjunction diode,exceptthatthere aretwowiresconnectedto theNtypeside.
NchannelJFET..
OperationofnchannelJFET
JFETisbiasedwithtwovoltagesources: VDD VGG VDD generatevoltagebiasbetweenDrain(D)andSource(S) VDS VDD causesdraincurrent,ID flowsfromDrain(D)toSource(S) VGG generatevoltagebiasbetweenGate(G)andSource(S) withnegativepolaritysourceisconnectedtotheGate Junction(G) reversebiasesthegate;thereforegatecurrent, IG =0. VGG istoproducedepletionregioninNchannelsothatitcan controltheamountofdraincurrent,ID thatflowsthroughthe channel
P-channel JFET
PchannelJFET:
Majorstructureisptypematerial(channel) betweenembeddedntypematerial toform2pn junction. Currentflow:fromSource(S)toDrain(D) HolesinjectedtoSource(S) throughptype channelandflowedtoDrain(D)
PchannelJFET..
OperationofpchannelJFET
JFETisbiasedwithtwovoltagesources: VDD VGG VDD generatevoltagebiasbetweenDrain(D)andSource(S) VDS VDD causesdraincurrent,ID flowsfromSource(S)toDrain(D) VGG generatevoltagebiasbetweenGate(G)andSource(S) withnegativepolaritysourceisconnectedtotheGate Junction(G) reversebiasesthegate;thereforegatecurrent, IG =0. VGG istoproducedepletionregioninPchannelsothatitcan controltheamountofdraincurrent,ID thatflowsthroughthe channel
Operation of a JFET
Drain N -
Gate P + N Source P +
+
DC Voltage Source
JFETCHARACTERISTICS
IVCHARACTERISTICSORDRAIN CHARACTERISTICS VDSVsIDS CONSTANTVALUEOFVGS TRANSFERCHARACTERISTICSORMUTUAL CHARACTERISTICS VGSVsIDS CONSTANTVALUEOFVDS
JFETCharacteristicCurve
Tostart,supposeVGS=0 Then,whenVDS isincreased,ID increases.Therefore,IDis proportionaltoVDS forsmallvaluesofVDS ForlargervalueofVDS,asVDS increases,thedepletionlayer becomewider,causingtheresistanceofchannelincreases. Afterthepinchoffvoltage(Vp) isreached,theID becomes nearlyconstant(calledasID maximum,IDSSDraintoSource currentwithGateShorted)