SARDAR RAJA COLLEGE OF ENGINEERING

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

MICRO LESSON PLAN
SUBJECT NAME : ELECTRIC CIRCUITS AND ELECTRON DEVICES
SUBJECT CODE : EC2151
YEAR/SEM : FIRST YEAR / II
BRANCH : CSE & ECE
Handled By
Mr.V.KALIMUTHU
Asst.Prof / ECE
E-MAILID:v.kalimuthuamutha@gmail.com
EC2151 ELECTRIC CIRCUITS AND ELECTRON DEVICES L T P C
3 1 0 4
TEXT BOOKS:
REFERENCE BOOKS:
4. J.Gnanavadivel and C.Senthil Kumar Electric circuits and Electron
Devices,First edition:2009.
HOURS WEEK
NO
TOPIC T/ R
BOOK
NO
PAGE.NO A/ V
CLASS
UNIT-I-CIRCUIT ANALYSIS TECHNIQUES
1.
I
Kirchoffs current and voltage laws T1 26
2.
3.
4.
Series and parallel connection of
independent sources-R,Land C
T1
28 T1
T1
5.
6.
7.
8.
9.
10.
II Network theorems-Norton
theorem,Thevenin theorem,Maximum
power transfer theorem,Super position .
T1 29 to 33
T1 114 to 127 Yes
11.
12.
III
Duality
T1 126
13.
14.
15.
16.
Star-Delta conversion
T1 117
UNIT II TRANSIENT RESONANCE IN RLC CIRCUITS
17.
18
19.
20.
IV
Basic RC,RL and RLC Circuits and their
responses to pulse and sinusoidal input.
T1 63 to 75
87 to 92
21.
22.
23.
24. V
Frequency response
Series and Parallel resonance
T1 165 to 177
T1 165 to 177
25.
26. Q-factor
T1 165 to 177
27.
28.
29.
30.
31.
VI
Single tuned and double tuned circuits.
R4 2.139 to 2.142
yes
UNIT III - SEMICONDUCTOR DIODES
32
33
34 VII
Review of intrinsic and extrinsic
semiconductors
T1 67 to 82 yes
35 Theory of PN junction diode T1 92 to 97
36 Energy band structure T1 98 to 100
37 Current equation T1 104 to 105
38
39 Space charge and diffusion capacitance T1 107 to 109
40 Effect of temperature and breakdown
41 VIII mechanism T1 111
42
43 Zener diode and its characteristics T1 123
UNIT IV -TRANSISTORS
44
45
IX
Principle of operation of PNP and NPN
transistors
T1 151
yes
46
47
48
49
Study of CE,CC,CB Configuration and
comparision of their characteristics
T1 154 to 161
50
X
Breakdown in Transistors T1 171
51
52
53
Operation and comparision of P-channel
and N-channel JFET.
T1 &
R4
197,212 &
4.53
54
XI
Drain current equation T1 202
55
56
MOSFET-Enhancement and Depletion
types-Structure and operation
T1 206,207
57
58
Comparision of BJT with MOSFET-
Thermal effect on MOSFET.
T1
205,212
210
UNIT V SPECIAL SEMICONDUCTOR DEVICES(Qualitative treatment only)
59
60
XII
Tunnel diodes-PIN Diode ,Varactor
diode
T1 136,144,125
61
62
SCR Characteristics and two transistor
equivalent model
T1 227
yes
63
64 UJT-DIAC and TRIAC T1 584,236,237
65
66
67 XIII
LASER,CCD,Photodiode,phototransistor T1 &
R4
146 &
5.34,5.37,5.41.
68
69
70
Photoconductive and Photovoltaic cells-
LED,LCD
T1 &
R4
775,781,789
& 5.43 to
5.46,5.49 to
5.51
ASSIGNMLN1-I
1.Find the current through 6 ohm resistance using superposition theorem.
2. Find the current through 10 ohm resistance using Nortons theorem
ASSIGNMLN1-II
1.Derive the expression for step response of series R-L Circuit.
2.In how many seconds after t=0 has the current i(t) become one half of its initial
value in the given circuit shown in fig.
3.Derive the expression for step response of series RLC Circuit.
ASSIGNMLN1-III
1.Derive the diode current equation of PN Junction diode.
2.Explain about operation and characteristics of PN junction diode.
3. Explain about operation and characteristics of Zener diode
ASSIGNMLN1-IV
1.Explain the operation of BJT and its types.
2.With the neat diagram ,explain the operation and input /output
Characteristics of CE Configuration.
3.With the neat diagram ,explain the operation of enhancement and
depletion type MOSFET.
ASSIGNMLN1-V
1.Explain the operation and characteristics of tunnel diode.
2. Explain the operation and characteristics of SCR.
3. Explain the operation and characteristics of LASER.
MAXIMUM POSSIBLE QUESTIONS
UNIT-I-CIRCUIT ANALYSIS TECHNIQUES
PART-A(2 Marks)
11. A resistor 3.6ohm is connected in series with another of 4.56ohm.What resistance must
be placed across 3.6ohm so that total resistance is 6ohm.
12.State kirchoffs current and voltage laws.
13.State Reciprocity theorem.
PART-B
UNIT II TRANSIENT RESONANCE IN RLC CIRCUITS
PART-A (2Marks)
10. Define RMS Value.
11. Define power factor.
12. What is an transient?
13. Define transient time.
14. Define transient response.
15. Define natural response.
PART-B
UNIT III - SEMICONDUCTOR DIODES
PART-A(2Marks)
PART-B
6.Derive the expression for energy band structure.
7.Explain about intrinsic and extrinsic semiconductors.
8.Explain about operation and characteristics of PN junction diode.
9. Explain about operation and characteristics of Zener diode
UNIT IV TRANSISTORS
PART-A
(2Marks)
PART-B
8. With the neat diagram ,explain the operation and input /output
Characteristics of CE Configuration.
UNIT V SPECIAL SEMICONDUCTOR DEVICES (Qualitative treatment only)
PART-A (2 Marks)
PART-B
1.Describe the operation of zener diode and explain its characteristics.
2.Explain the operation and characteristics of tunnel diode.
3. Explain the operation and characteristics of SCR.
4. Explain the operation and characteristics of TRIAC.
5. Explain the operation and characteristics of DIAC.
6. Explain the operation and characteristics of LASER.
7.Describe the operation of LED and LCD.
8.Write short notes on PIN Diode and Varactor diode.