Beruflich Dokumente
Kultur Dokumente
1. 10pts. Below is a semiconductor which has been patterned into the shape
illustrated. The thickness of the material is 1um with a mobility of 1000 cm2/V-
sec. Assume the fields transform abruptly at the interface. The doping in region 1
and region 3 is 1x1017cm-3 the doping in region 2 is 1x1016cm3
L1=10um, L2=50um, L3=20um and W1=100um, W2=10um, W3=50um
L1 Contact
L2
W1
W3
V
W2
L3
Region 2 Region 1
Region 3
Metal n+
poly Si
Semiconductor
Oxide
(p type)
V V
F, (n, p), Φ
A
B
X
-tOx 0
4. 10pts Consider the bipolar circuit shown below the ac voltage is (.002)sin(106ωt)V
calculate the current I required to make the voltage across the capacitor have a phase
angle of -45degrees with respect to the input ac voltage. β=100, C=10nF
RS
Vout
~
10pts b. An additional transistor with the same equivalent circuit elements
is added to form a cascode configuration shown below. Vg2 is high enough
to bias the device in saturation.
a. Draw the small signal diagram
b. Using the Miller techniques calculate the transfer function
c. What is the ratio of ω3dB cascode/ω3db CS?
Vout
Vg2
RS
7. 10pts Plot the Bode plot both phase and magnitude for the following function
T(s) 10 5
1 s /102
1 s / .1 1 s /104 1 s /107
8. 10pts Consider the differential amplifier circuit shown below with acitve
loads. Assume Vb is above the NMOS threshold Vtn. What is the minimal
common-mode voltage that can keep the bias transistor Qb saturated? Use
VDD
Q3 Q4
vout
vcm+ Q1 Q2 vcm-
Vb
Qb