IMPEDENCE IS HIGH COMPARED THEN BJT.

JFET IS VOLTAGE DRIVEN DEVICE WHILE AS BJT

CURRENT DRIVEN DEVICE.IN JFET THERE ARE NO JUNCTIONS AS IN ORDINARY TRANSISTOR,
CONDUCTION IS THROUGH AN n-TYPE OR p-TYPE SEMICONDUCTOR MATERIAL.FOR THIS REASON
NOISE LEVEL IS VERY SMALL.
== Answer == bjt is a bipolar device involving both types of charge carriers
,where as fet is a unipolar device involving only one type of charge carrier.the
main difference is that bjt is current controller device and fet is voltage
controller device
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fet has high input impedance compared to bjt
fet has low noise compared to bjt.
fet has low power dissipation compared to bjt
FET is a field effect transistor. BJT is bipolar junction transistor. BJT is based
on 2 P-N junctions with 3 electrodes. Emitter, collector and base. But important
is that small current of base control bigger current of collector. In FET is
current of ceollector (called drain) controlled with voltage between base(called
gate) and emitter(called source).
FET (Field Effect Transistor) is Voltage controlled devices
FET is Majority Carrier devices
It offers more input impedance, so the control requires less current
FET has Drain, Source and Gate terminals
Where as
BJT (Bipolar junction Transistor) is Current controlled devices
FET is Majority & Minority Carrier devices
It offers more low input impedance, so the control requires more current
FET has Emitter, Base and Collector terminals
FET is a field effect transistor. BJT is bipolar junction transistor. BJT is based
on 2 P-N junctions with 3 electrodes. Emitter, collector and base. But important
is that small current of base control bigger current of collector. In FET is
current of ceollector (called drain) controlled with voltage between base(called
gate) and emitter(called source).

The bipolar junction transistor (BJT) was the first type of transistor to be mass-
produced. Bipolar transistors are so named because they conduct by using both
majority and minority carriers. The three terminals of the BJT are named emitter,
base and collector. Two p-n junctions exist inside a BJT: the base/emitter
junction and base/collector junction. "The [BJT] is useful in amplifiers because
the currents at the emitter and collector are controllable by the relatively small
base current."
The field-effect transistor (FET), sometimes called a unipolar transistor, uses
either electrons (in N-channel FET) or holes (in P-channel FET) for conduction.
The four terminals of the FET are named source, gate, drain, and body (substrate).
On most FETs, the body is connected to the source inside the package