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EE215: Electronic Devices and Circuits

Week-7
17
th
21
st
March 2014


Slide 1
Hammad M. Cheema
EE215 Spring 2014
SEECS, NUST
Week1 Week5
EE215 Spring 2014
Hammad M. Cheema
Slide 2
Chp-3: Physics of semiconductors
Chp-4: Diode models and circuits

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This weeks topics
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Hammad M. Cheema
Slide 3
Chapter 6 Bipolar Junction transistors (BJTs)
Device structure and physical operation
Modes of operation
Circuit symbols
Current-Voltage (I-V) characteristics

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A voltage dependent current source as amplifier
EE215 Spring 2014
Hammad M. Cheema
Slide 4
L
in
out
V
KR
V
V
A = =
Voltage between two terminals controls the current in the third terminal
A voltage-dependent current source can act as an amplifier.
If KR
L
is greater than 1, then the signal is amplified.
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Exponential Voltage-Dependent current source
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Hammad M. Cheema
Slide 5
A three-terminal exponential voltage-dependent
current source is shown above.
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Structure and Symbol of Bipolar Transistor
Hammad M. Cheema
Slide 6
Bipolar transistor can be thought of as a sandwich of three doped
Si regions. The outer two regions are doped with the same
polarity, while the middle region is doped with opposite polarity.
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Bipolar terminals in simple terms
Hammad M. Cheema
Slide 7
The emitter emits charge carriers and the collector
collects them while the base controls the number of
carriers that make this journey.
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NPN BJT transistor
Two junctions present
Emitter-base junction (EBJ)
Collector-base junction (CBJ)
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Hammad M. Cheema
Slide 8
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PNP BJT transistor
PNP transistor having n-type sandwiched
between two p-type regions
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Hammad M. Cheema
Slide 9
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Modes of operation
Mode EBJ CBJ
Cutoff Reverse Reverse
Active Forward Reverse
Saturation Forward Forward
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Hammad M. Cheema
Slide 10
Active mode For amplifier circuits
Cutoff & Saturation For switching circuits
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Active mode
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Hammad M. Cheema
Slide 11
For Active mode operation: V
BE
> 0,
V
BC
< 0 (V
CB
>0)

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Operation in active mode

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Hammad M. Cheema
Slide 12
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Operation in active mode
Base Emitter junction is forward biased Electrons
flow from Emitter to base & holes in the opposite
direction
Electron flow should be more than hole flow so doping
level of Emitter is kept higher than base
As electrons enter base, because it is thin they reach
the collector base depletion region and are swept to
the collector region due to high electric field and are
absorbed by the +ve battery terminal.
In active mode, npn BJT carries large number of
electrons from the emitter, through the base to the
collector
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Hammad M. Cheema
Slide 13
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Carrier concentration in active mode
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Hammad M. Cheema
Slide 14
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BJT Large signal model (active mode)
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Hammad M. Cheema
Slide 15
A diode is placed between base and emitter and
a voltage controlled current source is placed
between the collector and emitter.

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I-V curves for BJT

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Hammad M. Cheema
Slide 16
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I-V curves example
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Hammad M. Cheema
Slide 17
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Cross-section of a practical NPN BJT
Collector surrounds the emitter region,
collecting all electrons
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Hammad M. Cheema
Slide 18
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Saturation mode of BJT
EBJ Forward biased
CBJ Forward biased

Collector current
decreases in
Saturation mode
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Hammad M. Cheema
Slide 19
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PNP transistor
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Hammad M. Cheema
Slide 20
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Circuit symbols
Drawing convention:
Current flows from
top to bottom
Therefore Emitter for
PNP drawn at the top

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Hammad M. Cheema
Slide 21
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Example 6.2
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Slide 22
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Dependence of i
c
on the collector voltage The Early voltage
Changing the collector voltage does change the collector voltage
slightly
This happens due to increase in CBJ depletion region and shrinking
of effective Base width thereby increasing Saturation current



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Hammad M. Cheema
Slide 23
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Collector current incorporating Early voltage
To incorporate increase in collector current an
extra term is introduced in the collector current
expression
EE215 Spring 2014
Hammad M. Cheema
Slide 24
|
|
.
|

\
|
+ =
A
CE
V
v
s c
V
v
e I i
T
BE
1
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Hammad M. Cheema
Slide 25
The End
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