Aug.

1999
PIN CONFIGURATION
DESCRIPTION
M54562P and M54562FP are eight-circuit output-sourcing
Darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
High breakdown voltage (BVCEO 50V)
High-current driving (Io(max) = 500mA)
With output clamping diodes
Driving available with PMOS IC output of 6 ~ 16V or with TTL output
Wide operating temperature range (Ta = 20 to +75C)
Output current-sourcing type
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
FUNCTION
The M54562P and M54562FP each have eight circuits,
which are made of input inverters and current-sourcing out-
puts. The outputs are made of PNP transistors and NPN
Darlington transistors. The PNP transistor base current is
constant. A spike-killer clamping diode is provided between
each output and GND. VS and GND are used commonly
among the eight circuits.
The inputs have resistance of 8.5k, and voltage of up to
30V is applicable. Output current is 500mA maximum. Sup-
ply voltage VS is 50V maximum.
The M54562FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
1.5K
7.2K
3K
8.5K
20K
VS
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The eight circuits share the VS and GND.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54562P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
1 IN1
IN2
IN3
IN4
IN5
IN6
IN7
GND
O8 IN8
VS
GND VS
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
O7
O6
O5
O4
O3
O2
O1

1 NC
IN1 O1
O2
O3
O4
O5
O6
O7
O8
IN2
IN3
IN4
IN5
IN6

IN7
IN8
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
10 11

NC

NC : No connection
Package type 18P4G(P)
INPUT
OUTPUT
INPUT OUTPUT
Package type 20P2N-A(FP)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54562P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = 20 ~ +75C)

IS (leak)
#
IS
VF
IR
#

0
2.4
0
VS
VIH
VIL
0.5 ~ +50
50
0.5 ~ +30
500
500
50
1.79(P)/1.10(FP)
20 ~ +75
55 ~ +125
V
V
V
50
30
0.2
Parameter
Limits
Symbol Unit
IO
0
0

350
100
mA
VCE (sat)
II
100
2.4
2.0
0.75
4.7
15.0
2.4
100
VS = 50V, VI = 0.2V
VS = 10V, VI = 2.4V, IO = 350mA
VS = 10V, VI = 2.4V, IO = 100mA
VI = 5V
VI = 25V
VS = 50V, VI = 5V (all input)
IF = 350mA
VR = 50V
Symbol Unit Parameter Test conditions
Limits

1.75
1.50
0.48
2.8
5.6
1.2

+ : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any
conditions.
# : Unused I/O pins must be connected to GND.
A
mA
V
A
V
mA
Ratings Unit Symbol Parameter Conditions
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
VCEO
#
VS
VI
IO
IF
VR
#
Pd
Topr
Tstg
Output, L
Current per circuit output, H
Ta = 25C, when mounted on board
V
V
V
mA
mA
V
W
C
C
# : Unused I/O pins must be connected to GND.
Supply voltage
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = 20 ~ +75C)
Duty Cycle
P : no more than 8%
FP : no more than 5%
Duty Cycle
P : no more than 55%
FP : no more than 30%
Out put cur r ent
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
H input voltage
L input voltage
min typ max
min typ
+
max
Supply leak current
Supply current
Clamping diode forward voltage
Clamping diode reverse current
Collector-emitter saturation voltage
Input current
ns
ns
ton
toff

110
5200

Symbol Unit Parameter Test conditions

Limits
min typ max
Turn-on time
Turn-off time
CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C)
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 20 ~ +75C)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54562P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TIMING DIAGRAM NOTE 1 TEST CIRCUIT
PG
50 CL RL
VS INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10s, tr = 6ns, tf = 6ns, ZO = 50
VI = 0 to 2.4V
(2) Input-output conditions : RL = 30, VS = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Measured device
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
Thermal Derating Factor Characteristics
Ambient temperature Ta (C)
M54562FP
M54562P
P
o
w
e
r

d
i
s
s
i
p
a
t
i
o
n


P
d

(
W
)
0
0
0.5
1.0
1.5
2.0
25 50 75 100
Output Saturation Voltage
Output Current Characteristics
Output saturation voltage VCE (sat) (V)
0
200
100
300
400
500
0
0.5 1.0 1.5 2.0 2.5
O
u
t
p
u
t

c
u
r
r
e
n
t


I
O

(
m
A
)
VS = 10V
VI = 2.4V
Ta = 75C
Ta = 25C
Ta = 20C
Duty-Cycle-Output Current Characteristics
(M54562P)
Duty cycle (%)

O
u
t
p
u
t

c
u
r
r
e
n
t


I
O

(
m
A
)
0
200
100
300
400
500
0
20 40 60 80 100

Duty cycle (%)

O
u
t
p
u
t

c
u
r
r
e
n
t


I
O

(
m
A
)
Duty-Cycle-Output Current Characteristics
(M54562P)
0
200
100
300
400
500
0
20 40 60 80 100
The output current values
represent the current per circuit.
Repeated frequency 10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 25C
The output current values
represent the current per circuit.
Repeated frequency 10Hz
The value in the circle represents the
value of the simultaneously-operated circuit. Ta = 75C
TYPICAL CHARACTERISTICS
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54562P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Duty-Cycle-Output Current Characteristics
(M54562FP)
Duty cycle (%)

O
u
t
p
u
t

c
u
r
r
e
n
t


I
O

(
m
A
)
0
200
100
300
400
500
0
20 40 60 80 100

Duty cycle (%)

O
u
t
p
u
t

c
u
r
r
e
n
t


I
O

(
m
A
)
Duty-Cycle-Output Current Characteristics
(M54562FP)
0
200
100
300
400
500
0
20 40 60 80 100
Input Characteristics
Input voltage VI (V)
0
Ta = 75C
Ta = 25C
Ta = 20C
0.4
0.2
0.6
0.8
1.0
0
1 2 3 4 5
I
n
p
u
t

c
u
r
r
e
n
t


I
I

(
m
A
)
VS = 20V
0
Ta = 75C
Ta = 25C
Ta = 20C
Ta = 75C
Ta = 25C
Ta = 20C
200
100
300
400
500
0
0.2 0.4 0.6 0.8 1.0
Input Characteristics
Input voltage VI (V)
0
Ta = 75C
Ta = 25C
Ta = 20C
2
1
3
4
5
0
5 10 15 20 25
I
n
p
u
t

c
u
r
r
e
n
t


I
I

(
m
A
)
VS = 20V
VS = 20V
VS-VO = 4V
Grounded Emitter Transfer Characteristics
Input voltage VI (V)
O
u
t
p
u
t

c
u
r
r
e
n
t


I
O

(
m
A
)
Clamping Diode Characteristics
Forward bias voltage VF (V)
0
100
200
300
500
400
0
0.5 1.0 1.5 2.0
F
o
r
w
a
r
d

b
i
a
s

c
u
r
r
e
n
t


I
F

(
m
A
)
The output current values
represent the current per circuit.
Repeated frequency 10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 25C
The output current values
represent the current per circuit.
Repeated frequency 10Hz
The value in the circle represents the
value of the simultaneously-operated circuit. Ta = 75C