Beruflich Dokumente
Kultur Dokumente
or
N(X
0
) < N
B
/10
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This
material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.
Ion Implantation
Selective Implantation
!
X
0
" R
p
+ #R
p
2ln
10N
p
N
B
$
%
&
'
(
)
= R
p
+ m#R
p
Mask thickness, Xo:-
Ion Implantation
Selective Implantation
Example 5.2:-
Boron penetration through a 50-nm gate oxide, with peak
concentration at the Si-SiO2 interface. Total dose implanted is to be
10e13 cm-2.
a) Calculate implant energy and peak concentration at the interface
b) How thick should the SiO2 layer be in areas not to be implanted,
if background concentration is 10e16 cm-3?
c) Supposed the oxide is 50nm thick everywhere, how much
photoresist required on top of the oxide to mask the implantation?
Note:- photoresist layer less effective in stopping ions; needs 1.8
times ooxide thickness for a same stopping power.
Ion Implantation (Junction depth)
If implant deep enough, you get both tails in Si
At points where N(x) = Nb, you get PN junctions.
Ion Implantation
Junction Depth
!
N x
j
( )
= N
B
N
p
exp "
x
j
" R
p
( )
2
2#R
p
2
$
%
&
&
'
(
)
)
= N
B
x
j
= R
p
#R
p
2ln
N
p
N
B
*
+
,
-
.
/
Ion Implantation
Junction Depth
Study Example 5.3
Ion Implantation
Channeling
Silicon atoms are organized in an
orderly crystal structure, not random.
Therefore large open spaces exist.
So how would this effect our Model?
What happens if an ion is shot right
through this long channel?
Ion Implantation
Channeling
Channeling causes ion penetration much
deeper than predicted by our simple model
Channeling depends on angle
Ion Implantation
Deviation from Gaussian Theory
Curves t four-moment
(Pearson Type-IV)
distribution functions
These dont look
like a normal
distribution. They
are skewed!
Light ions tend to
back scatter, settle
near surface, long
left tail dist.
Ion Implantation
Shallow Implantation
Ion Implantation
Shallow Implantation
Ion Implantation
Lattice Damage and Annealing
Implantation causes
damage to the lattice.
Implanted species not
electrically active yet.
We then heat (anneal) the
wafer to repair damage,
activate the dopants.
Annealing moves Si and impurity atoms back to lattice sites, form
bonds. Impurity becomes electrically active.
Ion Implantation
Lattice Damage and Annealing
Implantation Causes
Damage to Surface
Typically Removed by
Annealing Cycle
800-1000
o
C for 30 min.
Rapid Thermal Annealing
(RTA) Now Used for
Lower Dt Product
Ion Implantation
Rapid Thermal Annealing
Figure 5.12
(a) Concept for a rapid thermal annealing (RTP) system. (b) Applied Materials 300 mm RTP System (Courtesy Applied Materials)
Rapid Heating
950-1050
o
C
50
o
C/sec
Very Low Dt
(b)
Ion Implantation
Summary
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This
material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.
Ion Implantation
References
1. Read the whole Chapter 5.
2. Do problems 5.1 and 5.4.
3. Discuss the following:-
-Advantages and disadvantages of ion implantation and diffusion
-What is channeling? Causes and Effect of channeling?
-What is annealing? Purposes of annealing?
Due in 2-weeks time (Wednesday 16 April 2014)
You will be asked to demonstrate the solutions in class
Tutorial Chp. 5: