Beruflich Dokumente
Kultur Dokumente
Yannis Tsividis
Small-Signal Modeling
Transconductance
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
1
These slides are based on Y. Tsividis and C. McAndrew,
Operation and Modeling of the MOS Transistor, Copyright
Oxford University Press, 2011. They are meant to be part of a
lecture, and may be incomplete or may not even make sense
without the accompanying narration.
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
Transconductance in terms of bias quantities Strong inversion
Expressions are model-dependent.
Using simplified nonsaturation model:
2
,
>
>
Saturation:
-dependent in nonsaturation;
-dependent in saturation.
2
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
3
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
Consider saturation:
2
2
(1)
(2)
(3)
(4)
(1), (2)
(1), (2)
= 2
=
2
Three equivalent expressions for
in strong inversion-saturation.
4
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
At
:
(3)
(2)
= 0
= 2
= 2
(4)
=
2
=
2
0
How can equivalent expressions
give three different values for
??
5
A puzzle involving the expressions on the previous slide
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
With velocity saturation:
max
6
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
Weak Inversion
=
1
Compare to:
=
0
=
1
(Boltzmann limit)
(same current)
,
<
,
+
7
=
1
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
8
log
log
= 10
= 1
= 0.1
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
Body transconductance
With low
or
+
0
=
1, weak inverstion
0
+
+
0
+
, strong inversion
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
10
Strong- and weak-inversion expressions fail in moderate inversion!
1
Saturation
All-region model: see book.