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MOS Transistors

Yannis Tsividis
Small-Signal Modeling
Transconductance
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
1
These slides are based on Y. Tsividis and C. McAndrew,
Operation and Modeling of the MOS Transistor, Copyright
Oxford University Press, 2011. They are meant to be part of a
lecture, and may be incomplete or may not even make sense
without the accompanying narration.

Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
Transconductance in terms of bias quantities Strong inversion
Expressions are model-dependent.
Using simplified nonsaturation model:

2

,

>

>


Saturation:

-dependent in nonsaturation;

-dependent in saturation.
2
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
3


Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
Consider saturation:

2
2

(1)
(2)
(3)
(4)


(1), (2)
(1), (2)

= 2

=
2


Three equivalent expressions for

in strong inversion-saturation.
4
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
At

:
(3)
(2)

= 0

= 2

= 2


(4)

=
2

=
2
0

How can equivalent expressions
give three different values for

??
5
A puzzle involving the expressions on the previous slide


Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
With velocity saturation:


max

6
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
Weak Inversion

=
1


Compare to:

=
0

=
1

(Boltzmann limit)
(same current)

,
<
,



+
7

=
1


Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
8
log


log
= 10
= 1
= 0.1
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
Body transconductance
With low

or

+
0
=

1, weak inverstion

0
+

+
0
+

, strong inversion
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011
10
Strong- and weak-inversion expressions fail in moderate inversion!


1
Saturation
All-region model: see book.

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