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(
1
(
)
)
Thus,
=
b) Rearranging equation (P1.1.1)
()
and integrating the eq. above from source to drain [0,L]
0
=
()
Assuming the mobility constant along the channel it follows that
()
1.2
a) Substituting the inversion charge density given by
() =
)
in (P.1.1.2) it follows
or
[(
0
)(
) (
2
2
)]
or
2
(
)] (
)
b)
)
2
)
2
[2(
0
) (
)](
)
1.3
The resistance R of a MOSFET operating at low
with
= 0 is given
by
1
0
)
where RSH is the sheet resistance of the transistor.
For
0
= 1 and with the parameters of the 0.35 m technology
= 3.3
For a 10 resistance
1
=
1
10
=
1
3.3
Thus,
= 333
Considering L = 0.5m, the area WL is 83 m which is approximately 67
times the area of a minimum-dimension transistor.
Similarly for a resistance of 1k
= 3.33
For W= 3.3 m and L=1 m the area WL is 3.3 m which is
approximately 3 times the area of a minimum-dimension transistor.
Finally, for 100k
= 0.033
For W=2.5m and L=75 m, the area WL is 187.5m which is
approximately 150 times the area of a minimum-dimension transistor.
1.4
By definition the transconductances are the partial derivatives of the
current with respect to the terminal voltages, thus
I
D
=
Assuming that
I
D
= 0
Thus,
To make explicit the dependence of the drain current on the substrate
potential we substitute VGB by VG-VB and VSB by VS-VB in the expressions of
the drain current to obtain
(SI)
2
[
+ ( 1)
]
2
(WI)
=
0
(
(
(1))
)
In SI
= [
( 1)] = 2
( 1)] =
=
( 1)
( 1)] = ( 1)
= 0
Similarly, in WI
=
1
(
(
(1))
) =
=
1
(
(
(1))
) =
= 0
=
1
(
(
(1))
) =
( 1)
For VDS=0
= 0
In SI
= 2
In WI
1.5
Both the (long channel) strong (S) and weak (W) inversion model of the
MOSFET have the functional form
[(
) (
)]
where the function g is independent of the geometry. In SI g is a quadratic
function while in WI it is an exponential function. For the series association of
transistors (see Fig. below)
Series association of transistors
the condition of series association
= (
[(
) (
)]
= (
[(
) (
)]
allows us to calculate the potential at the intermediate node X as
(
) =
(
) +(
)
(
+(
Substituting the expression above in the drain current equation, it follows that
=
(
+(
[(
) (
)]
When WS=WD we have simply LEQ=LD+LS (as for the series association
of resistors with uniform ( length independent) technological parameters.
1.6
At threshold (see Eq. 1.3.12) IWI = IF(SI)
and
using (P1.2.3) we obtain
()
=
(2
)
2
2..
2
. Thus,
+
()
= 2
()
=
/(
)
4
2
=
10
6
41.24000.026
2
2
= 770
=
0.3410
12
77010
9
= 4.4
= 50
= 220
1.7
a)
= 2
= 628
= 16.3
For the BJT:
ln|
| = 0.671
For the MOSFET, using the strong inversion model with
= 0):
2
(
0
)
2
=
0
+
2
( )
0
= 0.8; = 1.35;
= 8010
6
2
Table 1.1, updated with values of VGS:
W/L IF(A) VG(V)
0 0.8
500 6.6 0.82
100 33.2 0.91
50 66.4 1.01
10 332 1.85
Strong inversion model
b)
For the BJT: =
= 770
For the MOSFET: =
= 10
628
Table 1.1, updated with voltage gains:
W/L IF(A)
a
ID(A)
b
Av(V/V)
a
Av(V/V)
b
0 22 - -285
500 6.6 28.6 -952 -220
100 33.2 55.2 -189 -114
50 66.4 88.4 -95 -71
10 332 354 -19.0 -18
a
Strong inversion model;
b
Accurate all-region MOSFET model.
1.8
The transconductance gmg including WCJ in the load is given by
= 2(
)
Substituting the above expression of gmg
in (P1.8.1) repeated below
(2.
1
2
)
we obtain
=
2(
)
(
)
Thus,
= (
2
) (1
2
)
Assuming that fT = 4GB, CL = 1pF, Cox =2fF/m
2
, CJ = 1fF/ m, and L=
m , the value of W calculated with the formula above is 30% larger than the
value obtained neglecting the parasitic drain-bulk capacitance.
1.9
2
=
1
2
= 1 +
2
= (1 +
1 +
)/2
Relative error (A-B)/A between the two models of IF/(tgms) vs. if
The maximum error is 25%, and it occurs at if=1.78.
1.10
= 1 +
2
;
(
1
+
1
2
1
Integrating between a generic voltage VS and the pinch-off voltage VP we
obtain
) =
Considering the transistor symmetry it follows that
) =