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Note: - All questions of equal of marks

Q1- Select the correct answer:-
i- In a JFET, when drain voltage is equal to pinch- off voltage, the depletion layers --------.
(a) almost touch each other (b) have large gap
(c) have moderate gap (d) none of above
ii- If the resistor in the emitter leg is not bypassed by a capacitor then the input impedance of the
small signal amplifier will ---------.
(a) Increase (b) decrease (c) Stay the same
(d) Increase in some cases and decrease in other cases
iii- When a BJT is biased in the active region its base-emitter junction and its base-collector
junction are ----------- and --------------.
(a) Forward biased; Reversed biased. (b) Reversed biased; Forward biased.
(c) Forward biased; Forward biased. (d) Reversed biased; Reversed biased.
iv- The input power to a device is 5000 watts at a voltage level of 400 volts. The output power
of the device is 750 watts and the output impedance is 25 ohms. Calculate the power gain in
decibels.
(a) -8.239 (b) 8.239 (c) -16.478 (d) 16.478
v- If the three- stage amplifier has individual stage gains of 10dB, 5dB and 12dB, then total
gain in dB is -----------------.
(a) 600dB (b) 24dB (c) 14dB (d) 27dB
vi- The capacitor in a BJT amplifier that have their break points in the low frequency region
are:-
(a) The coupling capacitor Cc (b) The emitter by pass capacitor Ce
(c) The source capacitor Cs (d) All of the above
vii- For an N-chaneel JFET IDss=8mA and Vp=-6 V, if ID=6mA then what is the value of the
gate to source voltage VGS?
(a) -0.8v (b) -1.5 v (c) 0.1334v (d) - 4.5 v
University of Baghdad
College of Engineering
Examiner: -
M.Sc. Hussein Abdul-Razzaq

Second Year
Final Exam-10-6-2013
Time: - 3 Hours
Electronics
Attempt five questions only


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Q2- Fill in the blanks by appropriate words:-
(I) The output power of a transistor amplifier is more than the input power because the
additional power is supplied by -------------------.
(II) The negative sign in the resulting equation for Av, in a BJT small signal analysis,
reveals that there is ---------------- between the input and the output signal.
(III) A BJT is a --------- controlled device while the FET is a ------------ controlled device.
(IV) An n-channel D-MOSFET with a positive VGS is operating in --------------- mode.
(V) In the ohmic region the channel behaves like a ----------------.
(VI) For the CE - voltage divider amplifier, the low frequency break point due to the
capacitor Cs, is -----------------.
(VII) The drain current ID in an E-MOSFET is given by the following equation -----------.

Q3-A- For the circuit in FIG3-A, find IC, VE and VCE.

Q3-B- For the circuit in FIG3-B, determine the IDQ and VGSQ using graphical method.



FIG3-A FIG3-B
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Q4-A- For the circuit in FIG4-A, find the (VDSQ and IDQ)

Q4-B- For the circuit in FIG4-B, find the value of VCE and IC




Q5-A- for the circuit shown below, with rd=50K:-
(a) Draw the AC equivalent circuit
(b) Drive voltage gain Av, Zi, and Zo
(c) Determine the value of output voltage if input voltage equal to 2mv.

FIG3-A FIG3-B
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Q5-B- For the circuit shown below, determine the Zi, Zo, AV and Ai, by using re model:-



Q6- For the cascaded amplifier of figure below drive and calculate the Zi, Zo, Av, and Vo






Good Luck