boron from the gas phase in the doping process after preliminary oxidation of experimentally measured results at a temperature
a temperature range of 75'C. over room tem
the n-type Si (100) surface with subsequent photolithography. Firstly, during
the preparation of the Si02 overlayer the silicon microdefects of dimensions 2
nm appeared to create nanostructures layers near n-type Si (100) surface. The
ultra-narrow silicon quantum well (Si-QW), 2 nm, is confined between these
nanostructures layers: Secondly, th; boron .difision was used to transform of
these layers into the nanoscale silicon p-n junctions, because the ultra-narrow
silicon quantum well became to be of the p-type. The important feature is the
high concentration of boron introduced which is equal to the value of 5 lOA21
cmh-3 that was measured by the SIMS method. Under these conditions boron
atoms form the trigonal dipole boron centers, B+ - B-, due to the negative-U
reaction: 2Bo -> B+ + B- [2]. Such high concentration of boron provides the
effective momentum relaxation of the non-equilibrium carriers which is of im-
portance in the recombination processes.
The nanoscale silicon p-n junctions, 2 nrn, were examined extensively using
different experimental techniques. Room temperature electroluminescence was
observed in the spectral ranges from visible to far infrared. The nanostructured
layers heavily doped with boron that represent the 8-barriers that confine the
ultra-narrow Si-QW appeared to participate in the generation of visible light as a
result of direct interband optical transitions in the 2 nm silicon microdefects. At
the interface of these 8-barriers and the n-type Si (100) bulk the donor-acceptor
recombination takes place involving the shallow donors of phosphorus and the
boron dipole centers. This process results in an intensive electroluminescence
near the 1.16 pm wavelength at room temperature. Moreover, the boron dipole
centers are responsible for the strong spectral band in the far infrared range of
electroluminescence. The results obtained show that the nanoscale silicon p-
n junctions are able to exhibit a great potential for realizing the fully silicon-
compatible optoelectronic devices.
[I] L. Pavesi, "Will silicon be the photonic material of the third millenium?,"
J. Phys.: Condens. Matter 15, R1169 (2003).
(21 N. T. Bagraev, A. D. Buravlev, L. E. Klyachkin, A. M. Malyarenko, W.
Gehlhoff, V. K. Ivanov, and I. A. Shelykh, "Quantized conductance in silicon
quantum wires," Semiconductors 36,439 (2002).
P03.10 MON 17:OO PO Gallery St Germain
Temperature independent guided mode resonance filters - 9M.R. SALE EM"^,
S. HONKANEN',
of Physics and Mathematics, FI-80101, Joensuu, Finland - 2 ~ a t i o n aUniversity
l '
and J. TURUNEN' - 'university of astern Finland, Department , account of the magnitude of the silicon refractive index, 3.4. For example, th
of Sciences and Technology (NUST), School of Chemical and Materials Engi-
F neering (SCME), Sector H-12, Islamabad, Pakistan
I The periodic refractive index modulation of diffraction grating creates optically
effective interfaces and show guided mode resonance filter (GMRF) phenomena
for incident electromagnetic waves over a selectable parameter range in photonic , nanosandwiches are used as the hf-source and the hf-recorder to observe tk
device applications [I]. In general, a diffraction grating diffracts total incident
power into various orders; the distribution of this power with wavelength de-
pends on the gratingperiodicity, profile, spectral order, wavelength, and thegrat-
ing material. The sub-wavelength gratings are modeled by using Fourier Modal
Method (FMM) at peak diffraction efficiency of 1.0.
Transparent polymer optical devices have advantage over inorganic devices
in several applications, e.g. inorganic glasses are less flexible; require higher
processing temperatures, and precise etching tools for the fabrications of nano-
patterns on substrates. On the other hand, polymer based optical components
can be fabricated with commonly replication from master stamp at relatively low
temperatures. The use of optical grade polymer substrates, such as polycarbonate
with thermal expansion coefficients (TEC) nearly ten times than those of optical
glasses and negative thermo-optic coefficient (TOC) not only show cost-effective
but also athermal waveguide properties of nano-devices [2]. The binary gratings
are fabricated in silicon (as a stamp) and replicated in polycarbonate by hot em-
bossing process followed by a growth of thin film cover layer of amorphous, high
index Ti02 by atomic layer deposition (ALD) [3].
In this paper we studied the effect of temperature changes on the peak posi- , Gray, W. -K. Kwok and U. Welp, "Emission of Coherent THz Radiation fro
tion of central resonance wavelength. The effect of change of various grating ge-
ometrical parameters on the thermal properties ofpolymer GMRFs is described.
Since, polymer materials are sensitive to thermal changes and result in variations
ofoptically coupled field due to change in geometrical parameters of grating such
as interfacial profile, period, height, and fill factor. Most importantly, the influ-
ence of two major contributing factors towards the shift of the center resonance
wavelength is, in general, TEC and TOC of the polymer and dielectric materials.
Polymer materials such as polycarbonate and thin Ti02 dielectric films have neg-
ative thermo-optic coefficients and thus can be exploited as for athermal optical
devices. The thermal shift in the resonance peak is nearly ten times smaller than
the spectral linewidth and efficiency remains more than 0.70 at a temperature
of 80°C which show thermal-stability of optical device. The grating efficiency is
re-measured and found exactly similar after cooling down from a temperature
of 100'C.
In summary, we investigated high efficiency organic-inorganic sub- I is that a blue LED chip coated with yttrium aluminum garnet yellow phosph
wavelength binary gratings as athermalized waveguides with low spectral shifts
on heating. The efficiency is found to be nearly independent on tempera-
ture around room temperature. The spectral properties of waveguide remain
thermally-stable using optical grade polymer materials with high TEC. The
spectral shifts towards longer and shorter wavelengths are evaluated in terms
of two main factors, TEC and TOC respectively. Realization of athermalized
waveguides are described by complete agreement of theoretically calculated and
94
L I ICNtT 2012 Program
perature. Ti02 films of two different thicknesses are also deposited and spectra
shifts are compared with theoretically modeled structures with 96.416
[I]. M. R. Saleem, P. Stenberg, T. Alasaarela, P. Silfsten, M. B. Khan, S. Honka
nen, and J. Turunen, "Towards athermal organic-inorganic guided mode reso
nance filters, " Opt. Express 19, 24242 (201 1).
[2]. M. R. Saleem, M. B. Khan, Z. M. Khan, P. A. Stenberg, T. Alasaarela
S. Honkanen, B. Bai, J. Turunen, P. Vahimaa, "Thermal Behavior of Waveguid,
Gratings:' Proc. of SPIE Photonic-Europe Vol. 8069 80690A-1 (201 1).
[3]. M. R. Saleem, P. A. Stenberg, M. B. Khan, Z. M. Khan, S. Honkanen
J. Turunen, "HSQ resist stamp for replication of nanophotonic components i~
polymers," J. MicroINanolithography, MEMS, and MOEMS accepted for publi
cation 11, (2012).
I P03.11 MON 17:OO PO Gallery St Germail
'Ihe GHz and THz Emission from the Silicon Nanosandwiches - K
BAGRAEV, *E. DANILOVSKII, D. GETS, L. KLYACHKIN, A. KUDRYAVTSEV, R
KUZMIN, and A. MALYARENKO - Ioffe Physical Technical Institute, St. Peters
burg, Russia
The THz and GHz optoelectronic pairs based on the compact silicon high fre
quency, hf, sources and recorders are still in progress. One of the best candidat
on the role of such a structure appears to be the planar silicon nanosandwic
that represents the high mobility p-type silicon quantum well of width 2nm, Si
QW,confined by the &barriers heavily doped with boron on the n-type Si (100
surface. The &barriers heavily doped with boron, N(B) = 5 x 10A21 cmA-3, hav
been already shown to exhibit the high temperature superconductor propertie:
Tc = 145K, 2A = 44meV, Hc2 = 0.22T [I].
The experimental device prepared within frameworks of the Hall geome
' try was provided by the top gate to control the longitudinal transport of twc
dimensional holes. The negative differential resistance and the Fiske steps cause
by the GHz Josephson emission, 9.3 GHz, are registered by measuring the drain
source current-voltage (CV) characteristics [2]. This observation becomes it po:
sible, because the system of microcavities have been incorporated into the Si-Q\I
plane, with the sizes corresponding the GHz frequencies, L = M2n. Here, the rc
(fractive index and wavelength are labeled n and A, respectively. To obtain valuc
for the frequencies it is necessary to select the dimensions of a cavity, L, takin
cavity of length 4.7 mm is inserted to provide the enhancement of the 9.3 GH
emission. The Josephson GHz emission is demonstrated, for the first time, t
be controlled by stabilizing the source-drain current and by varying the top gal
voltage because of the p-n junction presence in the device design. To identil
the operations of the THz and GHz optoelectronic pairs, two identical silico
Shapiro steps. These steps revealed by the Josephson CV characteristic are we
known to be caused by the hf illumination, with the voltage step equal to AU
hv/2e; here v denotes frequency [3]. Thus, the 9.3 GHz and 120 GHz Shapi~
steps in the Josephson CV characteristics are detected by the hf-recorder devic
when the value of the drain-source current in the hf-source device is stabilized
the value corresponded to the negative differential resistance area. Besides, tt
10.64 THz and 5.32 THz Shapiro steps are also observed which seem to be due r
the value of the superconductor gap. Finally, we suggest the phenomenologic
model for the drain-source CV characteristic revealed by the silicon nanosanc
wich devices which is presented in the terms of the topological superconducti~
edge channels that contain the Josephson junctions shunted by ballistic condu.
tors.
[ l ] N. T. Bagraev, W. Gehlhoff, L. E. Klyachkin, A. M.Malyarenko, V. V. RI
manov, S. A. Rykov, "Superconductivity in Silicon Nanostructures", Physica
21,437 (2006).
(2) L. Ozyuzer, A. E. Koshelev, C. Kurter, N. Gopalsami, Q. Li, M. Tachil
K. Kadowaki, T. Yamamoto, H. Minami, H. Yamaguchi, T. Tachiki, K.
Superconductors", Science 318, 1291 (2007).
[3] S. Shapiro, A. R. Janus, S. Holly, "Effect of Microwaves on Josephson Cu
rents in Superconducting Tunneling", Rev. Mod. Phys. 36,223 (1964).
P03.12 MON 17:OO PO Gallery St Germa
ZnO Nanorods on PMMA for White-Light Emission Using W - O z o n e Trea
ment - *M.-S. L I N ~C.-W. , KU', and C.-F. LIN'.?. - ' ~ r a d u a t eInstitute
Photonics and Optoelectronics National Taiwan University, Taipei 106, Taiw;
(R.O.C.). - 2 ~ e p a r t m e noft Electrical Engineering National Taiwan Universi
Taipei 106, Taiwan (R.O.C.).
Since gallium-nitride based white light emitting diodes were invented in 1996 '
Nichia Chemical Co, many researches have been made to enhance not only ef
ciency but also brightness of the ultravioletlblue LEDs used in phosphor-bas,
white light LED [I]. The most common-used method to generate white lig
(YAG (Y3A1502:Ce )) embedded in the epoxy dome. However, there are sl
some problems need to be solved. First, the phosphor needs to use yttrium
type of rare earth elements (REE). The main supplier of REE starts to restr
its exports. Its price will increase in the future. Second, the process to fab
cate YAG needs high annealing temperature and time. To reduce the total co
low-temperature process is required. Therefore, approaches to replace this phc
phor are being sought. Moreover, improvement in the overall efficiency of wh