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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION
The 2SK2487 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
Low On-Resistance
RDS (on) = 1.6 (VGS = 10 V, ID = 4.0 A)
Low Ciss Ciss = 2 100 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage VDSS 900 V
Gate to Source Voltage VGSS 30 V
Drain Current (DC) ID (DC) 8.0 A
Drain Current (pulse)* ID (pulse) 20 A
Total Power Dissipation (Tc = 25 C) PT1 140 W
Total Power Dissipation (TA = 25 C) PT2 3.0 W
Channel Temperature Tch 150 C
Storage Temperature Tstg 55 to +150 C
Single Avalanche Current** IAS 8.0 A
Single Avalanche Energy** EAS 264 mJ
* PW 10 s, Duty Cycle 1 %
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
2SK2487
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10283EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1.00.2
1 2 3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
4
15.7 MAX. 3.20.2
2.80.1 0.60.1 2.20.2
5.45 5.45
4.7 MAX.
1.5
1
.
0
6
.
0
7
.
0
1
9

M
I
N
.
2
0
.
0

0
.
2
3
.
0

0
.
2
4
.
5

0
.
2
Body
Diode
Source
Drain
Gate
1995
DATA SHEET
2SK2487
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on) 1.1 1.6 VGS = 10 V, ID = 4.0 A
Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 3.0 VDS = 20 V, ID = 4.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS 100 VGS = 30 V, VDS = 0
Input Capacitance Ciss 2 100 VDS = 10 V
Output Capacitance Coss 310 VGS = 0
Reverse Transfer Capacitance Crss 60 f = 1 MHz
Turn-On Delay Time td (on) 30 ID = 4.0 A
Rise Time tr 20 VGS = 10 V
Turn-Off Delay Time td (off) 130 VDD = 150 V
Fall Time tf 23 RG = 10
Total Gate Charge QG 65 ID = 8.0 A
Gate to Source Charge QGS 11 VDD = 450 V
Gate to Drain Charge QGD 29 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 8.0 A, VGS = 0
Reverse Recovery Time trr 770 IF = 8.0 A, VGS = 0
Reverse Recovery Charge Qrr 5.0 di/dt = 50 A/s
UNIT

V
S
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
C
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Test Circuit 3 Gate Charge
VGS = 20 - 0 V
PG
RG = 25
50
D.U.T.
L
VDD
Test Circuit 1 Avalanche Capability
PG.
RG = 10
D.U.T.
RL
VDD
Test Circuit 2 Switching Time
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
t = 1 us
Duty Cycle 1 %
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
10 %
0
0
90 %
90 %
90 %
10 %
VGS (on)
ID
ton toff
td (on) tr td (off) tf
t
2SK2487
3
TYPICAL CHARACTERISTICS (TA = 25 C)
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
I
D

-

D
r
a
i
n

C
u
r
r
e
n
t

-

A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
I
D

-

D
r
a
i
n

C
u
r
r
e
n
t

-

A
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
I
D

-

D
r
a
i
n

C
u
r
r
e
n
t

-

A
0.1
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - C
P
T

-

T
o
t
a
l

P
o
w
e
r

D
i
s
s
i
p
a
t
i
o
n

-

W
0 20 40 60 80 100 120 140 160
140
120
100
80
60
40
20
0.1
1
1
10
100
10 100 1 000
TC = 25 C
Single Pulse
0 20 30 40
10
1.0
10
100
Pulsed
20
10
0
Pulsed
5 10 15
R
D
S
(o
n
)
L
i
m
i
t
e
d
P
o
w
e
r

D
i
s
s
i
p
a
t
i
o
n

L
i
m
i
t
e
d
ID(DC)
ID(pulse)
P
W

=

1
0
0



s

1

m
s
1
0

m
s
TA = 25 C
25 C
75 C
125 C
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
d
T

-

P
e
r
c
e
n
t
a
g
e

o
f

R
a
t
e
d

P
o
w
e
r

-

%
0 20 40 60 80 100 120 140 160
20
40
60
80
100
TA = 25 C
25 C
75 C
125 C
2SK2487
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
h
(
t
)

-

T
r
a
n
s
i
e
n
t

T
h
e
r
m
a
l

R
e
s
i
s
t
a
n
c
e

-

C
/
W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|

y
f
s

|

-

F
o
r
w
a
r
d

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e

-

S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
D
S
(
o
n
)

-

D
r
a
i
n

t
o

S
o
u
r
c
e

O
n
-
S
t
a
t
e

R
e
s
i
s
t
a
n
c
e

-

0 10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
G
S
(
o
f
f
)

-

G
a
t
e

t
o

S
o
u
r
c
e

C
u
t
o
f
f

V
o
l
t
a
g
e

-

V
ID - Drain Current - A
R
D
S
(
o
n
)

-

D
r
a
i
n

t
o

S
o
u
r
c
e

O
n
-
S
t
a
t
e

R
e
s
i
s
t
a
n
c
e

-

0.5
1.0
10
0.001
0.01
0.1
1
100
1 000
1 m 10 m 100 m 1 10 100 1 000 10
VDS = 20 V
Pulsed
1 0.1
1
10
100
10 100
1.0
20 30
Pulsed
1.0
10 100
Pulsed
VGS = 10 V
0
4
VDS = 10 V
ID = 1 mA
50 0 50 100 150
0
1
Single Pulse
Tc = 25 C
2.0
Rth(ch-a) = 41.7(C/W)
Rth(ch-c) = 0.89(C/W)
3
2
1
1.5
100
TA = 25 C
25 C
75 C
125 C
ID = 8 A
4 A
1.6 A
2SK2487
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
D
S
(
o
n
)

-

D
r
a
i
n

t
o

S
o
u
r
c
e

O
n
-
S
t
a
t
e

R
e
s
i
s
t
a
n
c
e

-

SOURCE TO DRAIN DIODE


FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
I
S
D

-

D
i
o
d
e

F
o
r
w
a
r
d

C
u
r
r
e
n
t

-

A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
i
s
s
,

C
o
s
s
,

C
r
s
s

-

C
a
p
a
c
i
t
a
n
c
e

-

p
F
SWITCHING CHARACTERISTICS
ID - Drain Current - A
t
d
(
o
n
)
,

t
r
,

t
d
(
o
f
f
)
,

t
f

-

S
w
i
t
c
h
i
n
g

T
i
m
e

-

n
s
1.0
0.1
0
50
1.0
0
50 100 150
VGS = 10 V
ID = 4 A
0.1
0
1
10
100
0.5
Pulsed
10
1.0
100
1 000
10 000
10 100 1 000
VGS = 0
f = 1 MHz
10
100
1 000
1.0 10 100
V
G
S

-

G
a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e

-

V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
ID - Drain Current - A
t
r
r

-

R
e
v
e
r
s
e

R
e
c
o
v
e
r
y

t
i
m
e

-

n
s
di/dt = 50 A/ s
VGS = 0

10
0.1
100
1 000
1.0 10 100
1.0 1.5
VDD = 150 V
VGS = 10 V
RG = 10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Qg - Gate Charge - nC
V
D
S

-

D
r
a
i
n

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e

-

V
0 20 40 60 80
200
400
600
800
2
4
6
8
10
12
14
16
0
2.0
3.0
4.0
Ciss
Crss
Coss
VDD = 450 V
300 V
150 V
VGS
VDS
tr
td(on)
tf
td(off)
VGS = 10 V
VGS = 0V
10 000
2SK2487
6
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
A
S

-

S
i
n
g
l
e

A
v
a
l
a
n
c
h
e

C
u
r
r
e
n
t

-

A
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - C


E
n
e
r
g
y

D
e
r
a
t
i
n
g

F
a
c
t
o
r

-

%
1.0
0
25
10
100
1 m 1 m 10 m
VDD = 150 V
VGS = 20 V 0
RG = 25
20
80
120
160
50 75 100 125 150
VDD = 150 V
RG = 25
VGS = 20 V 0
IAS 8.0 A
100
60
40
140
IAS = 8 A
E
A
S
=
2
6
4
m
J
100

2SK2487
7
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037
2SK2487
8
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
Standard, Special, and Specific. The Specific quality grade applies only to devices developed based on
a customer designated quality assurance program for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in Standard unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
[MEMO]
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