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1. The document describes a new filter technique for optimizing the photon energy response of a silicon PIN diode dosemeter.
2. The technique uses a composite filter of two or more materials with several openings placed over the diode's active area to compensate for the diode's energy response while maintaining an extended low energy response.
3. Monte Carlo simulations were used to design and optimize composite filters for both current and pulse mode operations of a Hamamatsu S2281-101 diode, achieving an energy response within ±23-30% over wide energy ranges for different photon incidence angles.
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Originaltitel
A Filter Technique for Optimising the Photon Energy Response of a Silicon PIN Diode Dosemeter
1. The document describes a new filter technique for optimizing the photon energy response of a silicon PIN diode dosemeter.
2. The technique uses a composite filter of two or more materials with several openings placed over the diode's active area to compensate for the diode's energy response while maintaining an extended low energy response.
3. Monte Carlo simulations were used to design and optimize composite filters for both current and pulse mode operations of a Hamamatsu S2281-101 diode, achieving an energy response within ±23-30% over wide energy ranges for different photon incidence angles.
1. The document describes a new filter technique for optimizing the photon energy response of a silicon PIN diode dosemeter.
2. The technique uses a composite filter of two or more materials with several openings placed over the diode's active area to compensate for the diode's energy response while maintaining an extended low energy response.
3. Monte Carlo simulations were used to design and optimize composite filters for both current and pulse mode operations of a Hamamatsu S2281-101 diode, achieving an energy response within ±23-30% over wide energy ranges for different photon incidence angles.
Dosemeter 1. R.H. Olsher and 2. Y. Eisen Astract Silicon PIN diodes are used routinely as radiation detectors in electronic pocket dosemeters. Unless they are enery compensated! a sini"icant o#er$response occurs %elo& 2'' ke(. )t least one manu"acturer *Siemens+ is usin three diodes in parallel &ith indi#idual "ilters to produce e,cellent enery and anular response. It is also possi%le to use an alorithm %ased on the photon spectrum o" a sinle diode to "latten the enery response. Ho&e#er! the more cost e""ecti#e commercial practice is to use a sinle diode &ith a simple "ilter to "latten the enery response $ &ith the ma-or disad#antae o" sacri"icin lo& enery photon response. .he techni/ue o" usin a "ilter &ith an openin has %een used pre#iously! typically "or enery compensatin 01 detectors and proportional counters. ) ne& #ariation o" this techni/ue has %een in#estiated! &hich not only compensates the enery response o" a silicon PIN diode %ut also maintains and e,tended lo& enery response. .he techni/ue consists o" usin a composite "ilter o" t&o or more materials toether &ith se#eral openins &hose indi#idual areas is in the rane o" 123 to 223 o" the diode4s acti#e area. One o" the openins is centred o#er the diode4s acti#e area! &hile the others are located at the periphery o" the acti#e area to preser#e a ood polar response to 562 o . 1onte 7arlo radiation transport methods &ere used to simulate the couple electron $ photon transport throuh a Hamamatsu S22'8$'1 diode and to determine the enery response o" the diode "or a #ariety o" "ilters. 7omposite "ilters &ere desined! and optimised "or %oth current and pulse mode operation o" the diode "or a #ariety o" "ilters. 7omposite "ilters &ere desined! and optimised "or %oth current and pulse mode operation o" the diode. In current mode! the resultant dosemeter enery response relati#e to air dose &ith &ithin $123 and 9:'3 "or ' o incidence o#er the enery rane "rom 12 ke( to 1 1e(. ;or 562 o incidence! the enery response &ith &ithin $:'3 and 92'3 relati#e to air dose "rom :' ke( to 11e(. In pulse mode! the resultant dosemeter enery response &as &ithin $223 and 92'3 "or ' o incidence o#er the enery rane "rom :' ke( to 1' 1e(. "or 562 o
incidence! the enery response &as &ithin $223 and 96'3 "rom 6' ke( to 1' 1e(. .his "ilter techni/ue is applica%le to a #ariety o" silicon diodes. .he &ork and results descri%ed in this paper are intended to sho& the theoretical #ia%ility o" the "ilter techni/ue. Radiation Protection <osimetry