Sie sind auf Seite 1von 3

1

) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case


Gltig, wenn die Anschludrhte in 5 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
28
TIP32, TIP32A ... C General Purpose Transistors
PNP Si-Epitaxial PlanarTransistors PNP
Version 2004-06-29
Collector current Kollektorstrom 3 A
Plastic case TO-220AB
Kunststoffgehuse
Weight approx. Gewicht ca. 2.2 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
1 =B 2 =C 3 =E
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings (T
A
= 25C) Grenzwerte (T
A
= 25C)
TIP32 TIP32A TIP32B TIP32C
Collector-Emitter-voltage B open - V
CE0
40 V 60 V 80 V 100 V
Collector-Emitter-voltage B shorted - V
CES
40 V 60 V 80 V 100 V
Emitter-Base-voltage C open - V
EB0
5 V
Power dissipation Verlustleistung
without cooling ohne Khlung
P
tot
2 W
1
)
with cooling mit Khlung
T
C
=25C P
tot
40 W
Collector current Kollektorstrom - I
C
3 A (dc)
Peak Collector current
Kollektor-Spitzenstrom
- I
CM
5 A
Base current Basisstrom - I
B
1 A
J unction temp. Sperrschichttemp. T
j
150C
Storage temp. Lagerungstemperatur T
S
- 65+150C
Characteristics, T
j
= 25C Kennwerte, T
j
= 25C
Min. Typ. Max.
Collector saturation volt. Kollektor-Sttigungsspannung
- I
C
=3 A, - I
B
=375 mA - V
CEsat
1.2 V
Base-Emitter voltage Basis-Emitter-Spannung
- V
CE
=4 V, - I
C
=3 A - V
BEon
1.8
DC current gain Kollektor-Basis-Stromverhltnis
- V
CE
=4 V, - I
C
=1 A
- V
CE
=4 V, - I
C
=3 A
h
FE
h
FE
25
10

50
1
) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gltig, wenn die Anschludrhte in 5 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
29
General Purpose Transistors TIP32, TIP32A ... C
Characteristics (T
j
= 25C) Kennwerte (T
j
= 25C)
Min. Typ. Max.
Collector-Emitter cutoff current Kollektorreststrom
- V
CE
=30 V
TIP32
TIP32A
- I
CE0
- I
CE0

300 nA
300 nA
- V
CE
=60 V
TIP32B
TIP32C
- I
CE0
- I
CE0

300 nA
300 nA
- V
CE
=rated V
CE0
- I
CES
200 nA
h-Parameters at - V
CE
=10 V, - I
C
=0.5 A, f =1 kHz
Small signal current gain
Kleinsignal-Stromverstrkung
h
fe
20
Gain-Bandwidth Product Transitfrequenz
- V
CE
=10 V, - I
C
=0.5 A, f =1 MHz f
T
3 MHz
Switching times Schaltzeiten
turn-on time
- I
Con
=1 A,
- I
Bon
=I
Boff
=100 mA
t
on
300 ns
turn-off time t
off
1 s
Thermal resistance Wrmewiderstand
junction to ambient air Sperrschicht zu umgebender Luft
junction to case Sperrschicht zu Gehuse
R
thA
62 K/W
1
)
R
thC
3 K/W
Admissible torque for mounting
Zulssiges Anzugsdrehmoment
M 4 9 10% lb.in.
1 10% Nm
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
TIP31, TIP31A
TIP31B, TIP31C
This datasheet has been downloaded from:
www.DatasheetCatalog.com
Datasheets for electronic components.