MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MAC12
SERIES *

Advance Information

*Motorola preferred devices

TRIACS

TRIACS
12 AMPERES RMS
400 thru 800
VOLTS

Silicon Bidirectional Thyristors

Designed for high performance fullwave ac control applications where high
noise immunity and commutating di/dt are required.
Blocking Voltage to 800 Volts
On-State Current Rating of 12 Amperes RMS at 70C
Uniform Gate Trigger currents in Three Modes
High Immunity to dv/dt 250 V/s minimum at 125C
High Commutating di/dt 6.5 A/ms minimum at 125C
Industry Standard TO220 AB Package
High Surge Current Capability 120 Amperes

MT2

MT1
MT2
G

CASE 221A06
(TO-220AB)
Style 4

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Parameter
Peak Repetitive Off-State Voltage (1)
(TJ = 40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open)

Symbol

Value

Unit

VDRM

Volts
400
600
800

MAC12D
MAC12M
MAC12N

On-State RMS Current

(Full Cycle Sine Wave, 60 Hz, TC = 70C)

IT(RMS)

16

Watts

0.35

Watts

40 to +125

Tstg

40 to +150

RJC
RJA

2.2
62.5

C/W

TL

Storage Temperature Range

A2sec

TJ

Operating Junction Temperature Range

41

PG(AV)

Average Gate Power (t = 8.3 ms, TC = 80C)

PGM

Peak Gate Power (Pulse Width 1.0 s, TC = 80C)

100

I2t

Circuit Fusing Consideration (t = 8.3 ms)

ITSM

Peak Non-repetitive Surge Current

(One Full Cycle, 60 Hz, TJ = 125C)

12

260

THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)

Symbol

Characteristic

Min

Typ

Max

Unit

IDRM

0.01
2.0

mA

OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)

TJ = 25C
TJ =1 25C

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Thyristor Device Data

353

MAC12 SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Symbol

Min

Typ

Max

Unit

Peak On-State Voltage* (ITM = 17 A)

VTM

1.85

Volts

Continuous Gate Trigger Current (VD = 12 V, RL = 100 )

MT2(+), G(+)
MT2(+), G()
MT2(), G()

IGT
5.0
5.0
5.0

13
16
18

35
35
35

20

40

20
30

50
80

0.5
0.5
0.5

0.69
0.77
0.72

1.5
1.5
1.5

(dv/dt)c

6.5

A/ms

dv/dt

250

V/s

Characteristic

ON CHARACTERISTICS

Hold Current (VD = 12 V, Gate Open, Initiating Current = 150 mA)

IH

Latch Current (VD = 24 V, IG = 35 mA)

MT2(+), G(+); MT2(), G()
MT2(+), G()

mA

IL

Gate Trigger Voltage (VD = 12 V, RL = 100 )

MT2(+), G(+)
MT2(+), G()
MT2(), G()

mA
mA

VGT

Volts

DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current*
(VD = 400 V, ITM =4.4A, Commutating dv/dt = 18 V/s, Gate Open,
TJ = 125C, f = 250 Hz, No Snubber)
Critical Rate of Rise of OffState Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C)
*Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.

354

Motorola Thyristor Device Data