Carrier Transport

Dr. Dr.
Vinod Vinod Patidar Patidar

Solid State Physics for B. Tech (CSE/IT) Solid State Physics for B. Tech (CSE/IT)
Sir Padampat Singhania University, Udaipur
1 1
Carrier transport phenomena
Carrier transport phenomena
(i) Drift (i) Drift
(ii) Diffusion (ii) Diffusion
Two kinds of charges exist in semiconductors: (i) electrons Two kinds of charges exist in semiconductors: (i) electrons
and (ii) holes and (ii) holes
Drift Current Density: Drift Current Density:
(i) Electron drift current: (i) Electron drift current:
(i) Hole drift current: (i) Hole drift current:
E ne nev J
n dn drift n
= =
) (
E pe pev J
p dp drift p
= =
) (
Dr. Dr. Vinod Vinod Patidar Patidar
2 2
Total drift current: Total drift current:
) ( ) ( drift p drift n drift
J J J + =
E pe E ne J
p n drift
+ =
E p n e J
p n drift
) ( + =
E J
drift
=
) (
p n
p n e + =
) (
1 1
p n
p n e
+
= =
3 3
Diffusion current density: Diffusion current density:
(I) Diffusion hole current density: (I) Diffusion hole current density:
(ii) Diffusion electron density (ii) Diffusion electron density
Total diffusion current density: Total diffusion current density:
dx
dp
eD J
p diffusion p
=
) (
dx
dn
eD J
n diffusion n
=
) (
dx
dp
eD
dx
dn
eD J
p n diffusion
=
4 4
Total current density: Total current density:
E p n e
dx
dp
eD
dx
dn
eD
J J J
p n p n
diffusion drift
) ( + + =
+ =
E p n e
p n
) ( + E p n e
p n
) ( +
Induced electric field: Induced electric field:
Consider a semiconductor which is non Consider a semiconductor which is non- -uniformaly uniformaly doped with doped with
donor impurity atoms. The donor concentration decreases as x donor impurity atoms. The donor concentration decreases as x
increases. There will be diffusion of electrons from higher increases. There will be diffusion of electrons from higher
concentration region to the lower concentration region i.e. concentration region to the lower concentration region i.e.
electrons will flow in positive x electrons will flow in positive x- -direction. direction.
The flow of electrons leaves behind a positively charged donor The flow of electrons leaves behind a positively charged donor
ions. ions.
This separation of positive and negative charge induces an This separation of positive and negative charge induces an
electric field, which opposes the diffusion process. electric field, which opposes the diffusion process.
5 5
) (x N
d
dx
x dN
x N e
kT
E
d
d
x
) (
) (
1
|
\
|
=
If is the concentration of donor atoms at a partic If is the concentration of donor atoms at a particular ular
value of x , then the value of this electric field is given by: value of x , then the value of this electric field is given by:
In general, we can consider for n In general, we can consider for n- -type semiconductor type semiconductor
) ( ) ( x N x n or N n
d d
=
Einstein relation: Einstein relation:
For a non uniformly doped semiconductor in thermal For a non uniformly doped semiconductor in thermal
equillibrium equillibrium, electron current and hole current should be zero. , electron current and hole current should be zero.
0 = + =
dx
dn
eD E en J
n x n n

) ( ) ( x N x n
d
=
using using
6 6
2
v
And substituting the value of E And substituting the value of E
x x
e
kT D
n
n
=
0 = =
dx
dp
eD E ep J
p x p p

e
kT
D
p
p
=

7 7
Hall Effect:
Hall Effect:
2
v
L L
W W
d d
x x
z z y y
B B
z z
e e
- -
h h
+ +
E E
H H
V V
H H
I I
x x
V V
x x
8 8
Hall effect is used Hall effect is used
- - to determine that the given semiconductor is n to determine that the given semiconductor is n- -type or p type or p- -
type. type.
- - measure majority carrier concentration and majority carrier measure majority carrier concentration and majority carrier
mobility. mobility.
2
v
Z x H
B qv qE =
The induced electric field in y The induced electric field in y- -direction is known as Hall Field. direction is known as Hall Field.
w E V
H H
=
w B v V
z x H
=
Drift velocity of holes: Drift velocity of holes:
) ( ) ( wd ep
I
A ep
I
ep
J
v
x x x
dx
= = =
9 9
2
v
z
x
z
x
H
B
epd
I
w B
epwd
I
V = =
ed V
B I
p
H
Z x
=
Drift velocity of electrons: Drift velocity of electrons:
) ( ) ( wd en
I
A en
I
en
J
v
x x x
dx
= = =
z
x
z
x
H
B
end
I
w B
enwd
I
V = =
ed V
B I
n
H
Z x
=
10 10
2
v
x p
x
x
E pe
A
I
J = =
L
V
pe
wd
I
J
x
p
x
x
= =
wd epV
L I
x
x
p
=
wd enV
L I
x
x
n
=
Similarly for n Similarly for n- -type: type:
11 11
2
v
Intrinsic Semiconductor
A silicon crystal is different from an insulator because at any temperature
above absolute zero temperature, there is a finite probability that an electron
in the lattice will be knocked loose from its position, leaving behind an
electron deficiency called a "hole".
If a voltage is applied, then both the electron and the hole can contribute to
a small current flow.
The conductivity of a semiconductor can be modeled in terms of the band theory of
solids. The band model of a semiconductor suggests that at ordinary temperatures
there is a finite possibility that electrons can reach the conduction band and
contribute to electrical conduction.The term intrinsic here distinguishes between the
properties of pure "intrinsic" silicon and the dramatically different properties of doped
n-type or p-type semiconductors.
12 12
2
v
The Doping of Semiconductors (Extrinsic Semiconductors)
The addition of a small percentage of foreign atoms in the regular crystal
lattice of silicon or germanium produces dramatic changes in their
electrical properties, producing n-type and p-type semiconductors.
Pentavalent impurities:
Impurity atoms with 5 valence electrons produce n-type semiconductors
by contributing extra electrons.
Trivalent impurities:
Impurity atoms with 3 valence electrons produce p-type semiconductors
by producing a "hole" or electron deficiency.
13 13
2
v
p- and n- type semiconductors
14 14
2
v
n-type semiconductor
The addition of pentavalent impurities such as antimony, arsenic or
phosphorous contributes free electrons, greatly increasing the conductivity of
the intrinsic semiconductor.
The addition of donor impurities contributes electron energy levels high in the
semiconductor band gap so that electrons can be easily excited into the
conduction band. This shifts the effective Fermi level to a point about halfway
between the donor levels and the conduction band.
Electrons can be elevated to the conduction band with the energy provided
by an applied voltage and move through the material. The electrons are
said to be the "majority carriers" for current flow in an n-type
semiconductor.
15 15
2
v
p-type semiconductor
The addition of trivalent impurities such as boron, aluminum or gallium to an
intrinsic semiconductor creates deficiencies of valence electrons,called
"holes".
The addition of acceptor impurities contributes hole levels low in the
semiconductor band gap so that electrons can be easily excited from the
valence band into these levels, leaving mobile holes in the valence band.
This shifts the effective Fermi level to a point about halfway between the
acceptor levels and the valence band.
Electrons can be elevated from the valence band to the holes in the band gap
with the energy provided by an applied voltage. Since electrons can be
exchanged between the holes, the holes are said to be mobile. The holes are
said to be the "majority carriers" for current flow in a p-type semiconductor.
16 16
2
v
n
x
p
x
2
V
1
V
17 17
2
v
0 = + =
dx
dn
eD E en J
n n n

When the external voltage is zero, the total electron and hole current
will be separately zero.
n
dn D
Edx
n
n
=

=
n
p
n
p
n
n
n
n
x
x
n
dn D
Edx

=
n
p
n
n
n
n
V
V
n
dn D
dV
2
1
p
n
p
n
n
n
B
n
n
e
kT
n
n D
V V V V ln ln
1 2
= = = =
=
kT
eV
n n
B
p n
exp
(
=
kT
eV
p p
B
n p
exp
Similarly, we may prove
18 18
=
2
2
dx
V d
Let x
n
and x
p
are the widths of the space charge regions in the n and
p sides of the junction. Now using the one-dimensional Poissons
equation
Relation between barrier potential and depletion layer width

is charge density and permittivity of material
In the p-region (if N
a
is the concentration of acceptor atoms)
a
eN =
a
eN
dx
V d
=
2
2
A x
eN
dx
dV
a
+ =
At x=-x
p
, it gives
0 =
dx
dV
p a
x eN
A =
19 19
If V=-V
1
at x=-x
p
, then
x
x eN
x eN
V
p a
a

+ =
2
2
B Ax
x eN
V
a
+ + =
2
2
At x=0, V=0 it gives B=0, hence

2 2
2 2 2
1
p
a
p a p
a
x
eN
x eN x
eN
V

= =
Similarly use Poissons equation for the n-region
In the n-region (if N
d
is the concentration of donor atoms)
d
eN
dx
V d
=
2
2
C x
eN
dx
dV
d
+ =
d
eN =
20 20
If V=-V
2
at x=-x
n
, then
x
x eN x eN
V
n d d

+ =
2
2
D Cx
x eN
V
d
+ + =
2
2
At x=0, V=0 it gives D=0, hence

2 2
2 2 2
2
n d n d n d
x eN x eN x eN
V

= + =
0 =
dx
dV
n d
x eN
C =
At x=x
n
, it gives
) (
2
2 2
) (
2 2
2
2
1 2
n d p a
p
a n d
B
x N x N
e
x
eN x eN
V V V V
+ =
+ = = =

21 21
From the charge neutrality, we may say that
the space charge in n-region = space charge in p-region
n d p a
x eN x eN =
d
p a
n
N
x N
x =
|
|
\
|
|
|
\
|
+ =
2
2
2
d
p a
d p a B
N
x N
N x N
e
V
2
1
1
2
|
|
|
|
|
\
|
|
|
\
|
+
=
d
a
a
B
p
N
N
eN
V
x

Similarly
a
n d
p
N
x N
x =
|
|
\
|
|
|
\
|
+ =
2
2
2
a
n d
a n d B
N
x N
N x N
e
V
2
1
1
2
|
|
|
|
|
\
|
|
|
\
|
+
=
a
d
d
B
n
N
N
eN
V
x

22 22
The total width of the depletion layer is
n p
x x x + =
2
1
2
1
1
2
1
2
|
|
|
|
|
\
|
|
|
\
|
+
+
|
|
|
|
|
\
|
|
|
\
|
+
=
a
d
d
B
d
a
a
B
N
N
eN
V
N
N
eN
V
x

2
1
) ( 2
|
|
\
|
+
=
d a
d a B
N eN
N N V
x

2
1
B
V x
Hence the width of the depletion layer is proportional to the
B
V
23 23
P-n junction diode characteristics
Forward Bias
Reverse Bias
Various p-n junction diodes:
Zener Diode
Zener Breakdown
Avalanche Breakdown
Varactor diode (Reverse biased p-n diode)
Tunnel Diode (very highly doped forward biased p-n junction)
Photo diode (reversed biased p-n diode & exposed to radiation)
Light Emitting Diode (recombination of holes and
electrons in forward bias)
Solar Cell (basically high efficiency photo diodes)
24 24
2
v

Carrier Transport

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Carrier Transport

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Dr. Dr.

Vinod Vinod Patidar Patidar

Dr. Dr. Vinod Vinod Patidar Patidar

Relation between barrier potential and depletion layer width

At x=0, V=0 it gives B=0, hence

At x=0, V=0 it gives D=0, hence

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