IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 24, NO.

5, MAY 2014 321

A Novel Resonant Ground Structure
Based on a Cavity-Backed DGS
Imseob Shin, Tae-Hak Lee, Juseop Lee, Member, IEEE, and Young-Sik Kim, Member, IEEE
AbstractIn this letter, a new resonant ground structure (RGS)
based on a cavity-backed DGS is proposed. The proposed RGS
is similar to a DGS and is modeled by a parallel RLC resonance
circuit. Since the proposed RGS utilizes a substrate-lled metallic
cavity (SFMC) underneath the DGS, it leads to no back-radiation
and high quality factor. The frequency responses and structural
parameters are analyzed and veried via simulation and measure-
ment. The quality factor of the proposed RGS with a spiral-shaped
defect is larger than that of the DGS with the same defect by a
factor of 7.4.
Index TermsDefected ground structure (DGS), electromag-
netic bandgap (EBG), photonic bandgap (PBG), resonant ground
structure (RGS).
I. INTRODUCTION
T
HE bandgap structures such as a photonic bandgap (PBG)
and a DGS have been widely investigated [1][7]. In gen-
eral, most of DGSs are constructed with many articial defects
on the ground plane to provide the bandgap effect, and have a
low quality (Q) factor and high back-radiation. The DGSs with
one single defect, which are especially modeled to a parallel
RLC resonance circuit, have been widely utilized to resonators
[3], [4], lters [5], [6], dividers [7], and so on.
In this letter, a new RGS based on a cavity-backed DGS
is presented. As the proposed RGS features a substrate-lled
metallic cavity (SFMC) which is placed under the DGS, this
proposed RGS improves the Q factor and reduces back-radi-
ation. The proposed RGS can be modeled by a parallel RLC
resonance circuit. The structural and extracted parameters are
analyzed via the EM simulator. The experimented results are
compared with the results of the EM simulation and the circuit
model analysis.
II. MODELING AND STRUCTURE PARAMETERS
A. Modeling and Equivalent Circuit
Fig. 1(a) and (b) show the conguration of the proposed RGS
on a microstrip line. The proposed RGS consists of a dumb-
bell-shaped DGS and the SFMC which is slightly larger than or
Manuscript received September 16, 2013; revised December 04, 2013 and
January 14, 2014; accepted January 27, 2014. Date of publication March 21,
2014; date of current version May 06, 2014. This work was supported by the
Basic Science Research Program through the National Research Foundation of
Korea (NRF) funded by the Ministry of Education, Science, and Technology
(2012R1A111004665).
The authors are with the Department of Computer and Radio Commu-
nications Engineering, Korea University, Seoul 136-713, Korea (e-mail:
yskim@korea.ac.kr).
Color versions of one or more of the gures in this paper are available online
at http://ieeexplore.ieee.org.
Digital Object Identier 10.1109/LMWC.2014.2309079
Fig. 1. (a) Three-dimensional view of the proposed RGS with a dumbbell-
shaped defect. (b) XY cross-section.
equal to the defect size of a DGS. The bottom and four sides
of the SFMC are wrapped up with copper. Because the DGS
is clothed with a metal, it is expected that there is no back-ra-
diation loss. This SFMC plays two important roles. One is to
increase the effective capacitance. The dielectric material with
high permitivity in the SFMC is placed on the etched defect of
the DGS and, thus the effective capacitance increases with the
increase of the permitivity value. The other is to change the cur-
rent distribution which is formed by the DGS. In other words,
the SFMC and the etched defect together make a new current
distribution.
For illustration, we designed both DGS and RGS. The dimen-
sions of the conventional DGS are mm,
mm, and mm and the substrate with a thickness of
0.787 mm, a relative dielectric constant of 2.2, and a loss tan-
gent of 0.0009 is used. The same design parameters are set for
the proposed RGS and the SFMC has a width of 5.0 mm, a
length of 11.4 mm, a height of 1.27 mm, a dielectric con-
stant of 10.2, and a loss tangent of 0.0023. The simulation has
been carried out by ANSYS HFSS v12.
Fig. 2(a) shows the S-parameters of the proposed RGS and the
conventional DGS. The proposed RGS yields a narrower band-
width and higher rejection at the resonant frequency than those
of the DGS because the RGS scheme may capture the eld on
the DGS inside of the SFMC and then has a high Q character-
istic. The equivalent circuit of the proposed RGS can be mod-
eled by a parallel RLC resonance circuit because its frequency
responses are similar to those of the DGS. The equivalent cir-
cuit of both RGS and DGS is shown in the inset of Fig. 2(a). The
1531-1309 2014 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
322 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 24, NO. 5, MAY 2014
Fig. 2. (a) Comparison of the EM simulation results of the proposed RGS with
those of the DGS. (b) Current distributions of the DGS (left) and the proposed
RGS (right) at each resonant frequency.
TABLE I
EXTRACTED PARAMETERS OF THE EQUIVALENT CIRCUITS
current distributions at each resonant frequency (8.4 GHz in the
DGS and 7.15 GHz in the RGS) are plotted in the Fig. 2(b).
It is shown that the current distribution in the proposed RGS
is formed not along the etched defect but along the SFMC. In
Table I, the equivalent circuit parameters extracted from the EM
simulation results in Fig. 2(a) are compared for two congura-
tions. These parameters can be extracted using the following
equations [3]:
(1)
(2)
(3)
where is a characteristic impedance of the transmission line.
is the resonant frequency and is a 10 dB bandwidth. The
effective capacitance increases approximately 4.7 times, but the
effective inductance decreases almost 3.4 times. Therefore, the
Q factor of the proposed RGS increases about
4.2 times than that of the DGS.
B. Structure Parameters
In order to examine the structural characteristics of the
SFMC, the proposed RGSs are simulated by changing three
physical parameters, the dielectric constant, thickness, and size
of the SFMC.
Fig. 3. Simulated transmission responses of the proposed RGS for different
dielectric constants .
TABLE II
EXTRACTED CIRCUIT PARAMETERS BY CHANGING DIELECTRIC CONSTANT
Fig. 4. Simulated transmission responses of the proposed RGS for different
thicknesses of the SFMC (h).
TABLE III
EXTRACTED CIRCUIT PARAMETERS BY CHANGING THICKNESS
TABLE IV
EXTRACTED CIRCUIT PARAMETERS BY CHANGING SIZE
Fig. 3 shows the transmission responses of the proposed
RGSs, whose simulations are conducted for different dielec-
tric constants of the SFMC. The loss tangents of SFMCs are
slightly different because of commercial availability. The cir-
cuit parameters extracted for three different dielectric constants
SHIN et al.: A NOVEL RESONANT GROUND STRUCTURE BASED ON A CAVITY-BACKED DGS 323
Fig. 5. Photographs and measurements of the fabricated RGSs and DGSs. (a)
Bottom-view photos of the DGS (left) and the RGS (right). (b) Transmission re-
sponses for the dumbbell-shape defect. (c) Transmission responses
for the spiral-shape defect.
are listed in Table II. As the dielectric constant increases, the
effective capacitance increases so that the resonant frequency
moves to a lower band and the Q factor increases. It is noted
that the capacitance is mainly affected by a dielectric constant
of the SFMC.
Fig. 4 shows the transmission responses of the proposed
RGSs which are simulated for different thicknesses of the
SFMC. The circuit parameters extracted for three substrate
thicknesses are listed in Table III. As the thickness of the
SFMC increases, the effective inductance increases so that the
resonant frequency decreases and the Q factor also decreases.
Table IV show the extracted parameters of the proposed RGSs
for three different SFMC sizes. The perpendicular direction of
the SFMC does not make any effect on the current distribution
as shown in Fig. 2(b). Thus, the only longitudinal variation of
the SFMC is analyzed as given in Table IV. It is noted that
the thickness and the size of the SFMC have an impact on the
inductance rather than the capacitance.
In addition, the gap of the proposed RGS mainly makes effect
on the effective capacitance. Since the gap effect in the proposed
RGS is similar to that in the DGS [5], the gap property of the
proposed RGS is not dealt with in this letter.
III. MEASURED RESULTS AND DISCUSSION
In order to verify the above mentioned properties of the pro-
posed RGS, the proposed RGS and the DGS are fabricated and
measured. Fig. 5(a) shows the bottom-views of the DGS and the
RGS. Fig. 5(b) shows the transmission responses of the DGS
and the RGS with the same dumbbell-shaped defect. The mea-
sured results show good agreements with the simulated ones,
except that each resonant frequency is slightly higher than the
simulated one due to fabrication error. Frequency characteris-
tics of the proposed RGS at all frequencies behave well, while
those of the DGS become unstable at high frequency band due to
high back-radiation. The Q factor of the proposed RGS is 2.31
and that of the DGS is 0.729. Thus, the Q factor increases 3.2
times compared to the almost same size of the DGS.
The RGS concept can easily be applied to the DGS with
different defect shapes. The RGS with a spiral-shaped defect
is also fabricated and compared to the spiral-shaped
DGS . The same design parameters are set for the
, except for the SFMC which has a height of
1.27 mm, a dielectric constant of 6.15, and a loss tangent of
0.0027. The spiral-shaped defect has a gap 0.5 mm. Fig. 5(c)
shows the transmission responses of the DGS and the RGS with
the same spiral-shaped defect. The measured results agree with
the simulated ones very well. The Q factor of the is
7.4 times higher than that of the . It may be expected
that the RGS has a few times higher Q factor than the DGS
depending on the defect shape.
IV. CONCLUSION
In this letter, a new RGS based on a cavity-backed DGS,
which can be modeled by a parallel LC resonance circuit, is
introduced. It is demonstrated that the proposed RGS, which
shows an excellent resonance characteristic, features a high Q
factor and no back-radiation by comparing with the DGS. It is
expected that the proposed RGS can be widely applied to var-
ious microwave and millimeter-wave circuits such as lters, di-
viders, ampliers, and so on.
REFERENCES
[1] F.-R. Yang, K.-P. Ma, Y. Qian, and T. Itoh, A uniplanar compact pho-
tonic -bandgap (UC-PBG) structure and its applications for microwave
circuits, IEEE Trans. Microw. Theory Tech., vol. 47, pp. 15091514,
Aug. 1999.
[2] B.-Q. Lin, Q.-R. Zheng, and N.-C. Yuan, A novel planar PBG struc-
ture for size reduction, IEEE Microw. Wireless, Compon. Lett., vol.
16, no. 5, pp. 269271, May 2006.
[3] C.-C. Chang, C. Caloz, and T. Itoh, Analysis of a compact slot res-
onator in the ground plane for microstrip structures, in Proc. Asia-Pa-
cic Microw. Conf., Taipei, Taiwan, 2001, pp. 11001103.
[4] X.-H. Wang, B.-Z. Wang, H. Zhang, and K. J. Chen, A tunable band-
stop resonator based on a compact slotted ground structure, IEEE
Trans. Microw. Theory Tech., vol. 55, no. 9, pp. 19121918, Sep. 2007.
[5] D. Ahn, J.-S. Park, C.-S. Kim, J. Kim, Y. Qian, and T. Itoh, A design
of the low-pass lter using the novel microstrip defected ground struc-
ture, IEEE Trans. Microw. Theory Tech., vol. 49, no. 1, pp. 8693,
Jan. 2001.
[6] X. Lai, C.-H. Liang, H. Di, and B. Wu, Design of tri-band lter based
on stub loaded resonator and DGS resonator, IEEE Microw. Wireless
Compon. Lett., vol. 20, no. 5, pp. 265267, May 2010.
[7] D.-J. Woo and T.-K. Lee, Suppression of harmonics in Wilkinson
power divider using dual-band rejection by asymmetric DGS, IEEE
Trans. Microw. Theory Tech., vol. 53, no. 6, pp. 21392144, Jun. 2005.