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BEL Placement Paper 2

(Technical-Electronics-IInd)
1. Resistivity of silicon in ohms cm. is approx. equal to
a. 5 !. 11" c. "#$ d. 1-%
". Rsistivity of&ermanium in ohms cm. is approx. equal to
a. 5 !. 1-1" c. 5$ d. 1-%
#. The num!er of free electrons'cu!ic cm intrinsic &ermanium at room temperature is approx. equal to
a. 1.5(11 !. ".5(11# c. 1 d. 5(1%
). The num!er of free electrons'cu!ic cm of intrinsic silicon at room temperature is approx. equal to
a. 1.5(11 !. ".5(11# c. 1 d. 5(1%
5. The for!idden ener*y *ap for silicon is
a. 1.1e+ !. %,e+ c. .-,e+ d. 1.,e+
%. The for!idden ener*y *ap for &ermanium is
a. 1.1e+ !. %,e+ c. .-,e+ d. 1.,e+
,. . type material is formed !y the addition of the follo/in* (penta valent )atom in n to semiconductor
material
a. 0ntimony
!. 0rsenic
c. 1hosphorous
d. 0ny of the a!ove
2. 1 type material is formed !y the addition of the follo/in* 3Trivalent4 atom tn to semiconductor
material
a. 5oron !. &allium c. Indium d. 0ny of the a!ove
-. Impurity atoms that produces . type material !y its addition in semiconductor is called
a. 6onar !. 0cceptor c. 7onductor d. Insulator
1. Impurity atoms that produces 1 type material !y its addition in semiconductor is called
a. 6onar !. 0cceptor c. 7onductor d. Insulator
11. 6ynamic resistance of a diode Rd is if volta*e chan*es is 6+d and the current chan*e is 6 Id
a. 6 +d ' 6 Id
!. 6 Id ' 6 +d
c. 1 ' 6+d
d. 1 ' 6 Id
1". 1oint contact diodes are preferred at very hi*h frequency8 !ecause of its lo/ 9unction
a. 7apacitance and inductance
!. Inductance
c. 7apacitance
1#. Identify the circuit *iven !elo/
a. 0.6 *ate
!. :R *ate
c. Rectifier
d. .:R *ate
1). Identify the circuit *iven !elo/
a. 0.6 *ate
!. :R *ate
c. Rectifier
d. .:R *ate
15. 67 value of a ;alf /ave rectifier /ith Em as the pea$ value of the input is
a. .#12Em
!. .)12Em
c. .512Em
d. .%12Em
1%. 7han*e in <ener volta*e of 1+ at 1o 7 if temperature co-efficient is .,"=o 7 as
a. .5) + !. .,) + c. .%) + d. .1) +
1,. If Tc is th e= temperature co of ' o7 and +> as >ener volta*e and T as chan*e in temperature then
the chan*e in >ener volta*e is
a.
!.
c. 1. +>. Tc 6T
d. .one of these of the a!ove
12. 1I+ for a full /ave rectifier8 if Em is the pea$ volta*e is
a. Em !. 1.5Em c. .%#%Em d. "Em
1-. ?chott$y 5arrier diodes !ecomes important at
a. 67 level operation
!. @o/ frequency operation
c. ;i*h frequency operation
d. .one of these
". 7lampin* net/or$ is the one that /ill clamp the si*nal to a
a. 6ifferent pea$ value
!. 6ifferent 67 level
c. 6ifferent polarity level
d. 6ifferent RA? level
"1. 7lippin* net/or$ is the one that /ill clip a portion of the
a. Input si*nal /ithout distortin* the remainin* portion
!. Input si*nal /ith distortin* the remainin* portion
c. 0ny of the a!ove
d. .one of these
"". Transition capacitance 7t of a +aricap diode /ith Bnee volta*e +t8 reverse volta*e +r and B8 the
constant !ased on semiconductor material and the construction technique C . dependent on type of
9unction is *iven !y
a. 1 ' B (+t D +r).'"
!. 1 ' B (+t D +r).
c. B ' (+t D +r).
d. B ' (+t D +r)1'.
"#. 7t E B ' (+t D +r). /here +t Bnee volta*e8 +r reverse volta*e8 B manufacturin* dependent
constant and . dependent on type of 9unction8 for alloy 9unction the value of . is
a. 1'# !. "'# c. 1'" d. 1')
"). 7t E B ' (+t D +r). /here +t Bnee volta*e8 +r reverse volta*e8 B manufacturin* dependent
constant and . dependent on type of 9unction8 for diffused 9unction the value of . is
a. 1'# !. "'# c. 1'" d. 1')
"5. In FGET8 the drain current Id is *iven !y (Idss drain H source saturation current +*s H &ate H source
volta*e8 +p the pinch off volta*e)
a. Idss31 H +p'+*s4
!. Idss(1 H +*s'+p)"
c. Idss31 H +*s'+p)
d. Idss(1 H +*s'+p)#'"
"%. The shado/ mas$ in colour tu!e is used to
a. Reduce I-Ray emission
!. Ensure each !eam hits its o/n dots
c. Increase screen !ri*htness
d. 1rovide de*aussin* for the screen
",. Indicate /hich of the follo/in* si*nal is not transmitted in colour T+
a. J !. K c. R d. I
"2. 0nother name for hori>ontal retrace in T+ receiver is the
a. Rin*in* !. 5urst c. 6amper d. Gly !ac$
"-. 0nother name for the colour sync in the colour T+ system
a. Rin*in* !. 5urst c. 6amper d. Gly !ac$
#. The ;+ anode supply for a picture tu!e of a T+ receiver is *enerated in the
a. Aains transformer
!. +ertical output sta*e
c. ;ori>ontal output sta*e
d. ;ori>ontal oscillator
#1. The output of vertical amplifier is
a. 6irect current
!. 0mplified vertical sync pulse
c. 0 sa/ tooth volta*e
d. 0 sa/ tooth current
#". In a transistor if 0lpha E .-28 current *ain is equal to
a. "- !. 5- c. %- d. )-
##. The active re*ion in the common emitter confi*uration means
a. 5oth collector and emitter 9unction is reverse !iased
!. The collector 9unction is for/ard !iased and emitter 9unction
c. The collector 9unction is reverse !iased and emitter 9unction is for/ared !iased
d. 5oth collector C emitter 9unction are for/ard !iased
#). The saturation re*ion in the common emitter confi*uration means that
a. 5oth collector C emitter 9unction are reverse !iased
!. The collector 9unction is for/ard !iased and emitter 9unction
c. The collector 9unction is reverse !iased and emitter 9unction is for/ared !iased
d. 5oth collector C emitter 9unction are for/ard !iased
#5. The = of Red8 &reen C 5lue in 1= Lhite J is *iven !y
a. #=8 5-=8 11=
!. 5=8 #=8 11=
c. #=8 11=8 5=
d. ##.#=8 ##.5=8 #2.#=
#%. Equali>in* pulse /idth8 if ; is the ;ori>ontal sync rate
a. .%) ; !. ., ; c. .) ; d. .1% ;
#,. In a simple R7 net/or$ the !and/idth is equal to
a. 1'" p R7
!. R7 ' "
c. " 7 ' p R
d. " p ' R7
#2. The time constant of a R7 net/or$ is *iven !y
a. R7 !. 7'R c. R'7 d. .one of these
#-. Girst >ero crossin* of pulse frequency spectrum occurs at if d is the pulse /idth8 T is the pulse
repetition rate
a. 1'd !. d'T c. T'd d. T
). The distortion less output characteristic of a net/or$ means
a. 7onstant amplitude and linear phase shift over frequency
!. @inear phase shift and amplitude need not !e constant
c. 0ny amplitude and phase
d. .one of these
)1. ?in*le side!and means suppressed
a. 7arrier
!. 7arrier and one side !and
c. :ne side !and
d. .one of these
)". In an amplitude modulated si*nal8 lo/er side !and frequency is equal to (if the carrier frequency is
fc and modulation frequency is fm)
a. fm D fc !. fc H fm c. fm r fc d. fc ' fm
)#. Aodulation index of the frequency modulation depends on
a. 0mplitude C frequency of the modulation si*nal
!. Grequency and amplitude of carrier si*nal
c. 7arrier frequency
d. .one of these
)). The 5L of the narro/ !and GA if modulatin* frequency is fm
a. # r fm !. " r fm c. ".5 r fm d. 1 r fm
)5. Reactance tu!e modulator is $no/n for
a. GA !. 0A c. 11A d. 10A
)%. 5and/idth and rise time product is
a. .#5 !. .)5 c. .# d. .)-
),. Ener*y *ap8 @*8 for &ermanium at room temp 3#o B4 is
a. .,"e+ !. 1.1e+ c. 1.5#e+ d. ."e+
)2. +olt equivalent of temperature +T8 at 11%o B is
a. .11+ !. .1+ c. 1.1%+ d. .1+
)-. Reverse saturation current of a &e.diode is in the ran*e of
a. m0 !. u0 c. n0 d. p0
5. 7ut-in volta*e + for silicon is approximately
a. ."+ !. .%+ c. .-+ d. 1.1+
51. Every 1o 7 rise in temp. the reverse saturation current
a. 6ou!les
!. ;alves
c. Triples
d. .o chan*e
5". ;all effect /ith reference to Aetal or ?emiconductor carryin* a current I is placed in a transverse
ma*netic field 58 an electric field E is induced in
a. 1arallel to 5
!. 1erpendicular to I
c. 1erpendicular to !oth 5 C I
d. 1erpendicular to 5
5#. 1 e+ (electron volt) is equal toM
a. 1.- r 1-" F
!. 1.% r 1-1- F
c. 1.% r 1-" F
d. 1.1% r 1-1- F
5). 6onar impurity is havin* a valency ofM
a. " !. # c. ) d. 5
55. 0cceptor impurity is havin* a valency of
a. " !. # c. ) d. 5
5%. Electron volt arises from the fact that if any electron falls throu*h a potential of 1 volt8 its $inetic
ener*y /ill
a. 6ecrease8 C potential ener*y /ill increase
!. Increase C potential ener*y decrease
c. 5e unaltered C potential ener*y decreases
d. Increase C potential ener*y increase
5,. ;ole is created in a semiconductor material if one of follo/in* impurities are added
a. 0ntimony
!. 0rsenic
c. Indium
d. 1hosphorus
52. Excess electron is created !y
a. 5oran
!. &allium
c. Indium
d. 0rsenic
5-. 0 snu!!er circuit is used across the ?7R to protect a*ainst
a. The di'dt of the anode current
!. The dv'dt turn on
c. @.di'dt of load inductance
d. .one of these
%. &ermanium has the valency of
a. " !. # c. ) d. 5
%1. ?ilicon has the valency of
a. " !. # c. ) d. 5
%". ;ole acts as a free char*e carrier of polarity
a. .e*ative
!. 1ositive
c. .eutral
d. .one of these
%#. 5urst si*nal in .T?7 system is 2 cycles of the frequency of
a. 7olour su! carrier
!. 1icture carrier
c. ?ound carrier
d. .one of these
%). 7olour su! carrier reference !urst is superimposed on the
a. 5ac$ porch of the each hori>ontal sync pulse
!. Gront porch of the each hori>ontal sync pulse
c. Gront porch of the each vertical sync pulse
d. 5ac$ porch of the each vertical sync pulse
%5. The la/ of mass action /ith reference to semiconductor technolo*y states that the product of free
ne*ative C positive concentration is a constant and
a. Independent of amount of donor and acceptor dopin*
!. 6ependent on amount of donor and independent of the amount acceptor impurity dopin*
c. 6epend on amount of !oth donor C acceptor impurity dopin*
d. .one of these
%%. The snu!!er circuit used across ?7R is a simple
a. R-@ net/or$
!. R@7 net/or$
c. @7 net/or$
d. R7 net/or$
%,. To limit the rate of rise of ?7R anode current a small
a. Inductor is inserted in cathode circuit
!. Inductor is inserted in anode circuit
c. 7apacitor is inserted in anode circuit
d. 7apacitor is inserted in cathode circuit
%2. Torque developed !y a 67 servo motor is proportional to the
a. 1roduct of po/er and time
!. 1roduct of armature current and !ac$ emf
c. 0rmature volta*e and armature current
d. Gield volta*e and field current
%-. 1roportional Inte*ral control
a. Reduces steady state error !ut reduces the for/ard *ain
!. Increases the for/ard *ain and reduces the steady state error
c. Increases the steady state error and increases the for/ard *ain
d. .one of these
,. Increasin* the servo !and/idthM
a. Improves si*nal to noise ratio
!. Improves speed response and lo/ers si*nal to noise ratio
c. Improves po/er output
d. .one of these
,1. .otch filter is
a. @o/ pass filter
!. ;i*h pass filter
c. .arro/ stop !and filter
d. .arro/ pass !and filter
,". In T+ Receivers the Electron !eam deflection method used is
a. Electro static
!. Electro ma*netic
c. Aa*netic
d. 0ll the a!ove
,#. In a line of si*ht communication the maximum ran*e R in miles !et/een the receiver antenna and
transmitter antenna of hei*ht ; in feet is approximately
a. R E 1.-# N;
!. R E 1."# N;
c. R E 1.5# N;
d. R E ".# N;
,). In /avelen*th of the % A;> carrier frequency is
a. 1 metres
!. 15 metres
c. 5 metres
d. ".5 metres
,5. In standard T+ receivin* antenna the dipole element is
a. .5 of the /ave len*th
!. ."5 of the /ave len*th
c. 1.5 of the /ave len*th
d. 1. of the /ave len*th
,%. The characteristics of GET are similar toM
a. Triode
!. Tertode
c. 1entode
d. 6iode
,,. 7har*e coupled device is an array of capacitors /hose structure is similar toM
a. ?hift re*ister
!. Glip-flop
c. .0.6 *ate
d. 0mplifier
,2. :perational amplifier characteristics are /hich of the follo/in*M
a. Infinite *ain
!. Infinite input impedance
c. :utput impedance is >ero
d. 0ll of the a!ove
,-. The typical value of the open loop *ain in d5 of an amplifier at 67 /ith no feed!ac$ isM
a. - to 1
!. 2 to -
c. to 5
d. 5 to ,
2. The # d5 !and /idth means the frequency at /hich
a. The open loop volta*e *ain reduced to .,,
!. The open loop *ain reduced to unity
c. Aaximum volta*e of a si*nal is /ithout distortion
d. It is a medium /ave !and /idth of radio receiver
21. Rise time of an amplifier is defined as time required
a. To chan*e from to 1 = of its final value
!. To chan*e from to 5 = of its final value
c. To chan*e from 1 to - = of its final value
d. To chan*e from 1 to 1 = of its final value
2". ;i*h speed amplifier desi*n emphasi>ed on
a. Extremely small !and/idth
!. +ery slo/ response
c. Onity *ain !and/idth after 1 A;>
d. .one of these
2#. Tuned amplifier havin* the frequency ran*e !et/een
a. 15 B;> H 5 A;>
!. 1 ;> H 1 B;>
c. 1 B;> H 1" B;>
d. 5 A;> H 1 A;>
2). The resonance frequency of a tuned circuit made up of R8 @8 7 is *iven !y
a. 1'" pN@7
!. " pN@7
c. " p ' N@7
d. N@7 ' "
25. The volta*e follo/er can !e o!tained usin* operational amplifier
a. Lithout any feed!ac$
!. ?eries parallel feed!ac$ of unity
c. 1arallel feed!ac$
d. ?eries feed!ac$
2%. Gidelity of the amplifier is /hen
a. It is a linear amplifier
!. It does not add or su!tract any spectral components
c. It amplifier each component !y the same amount
d. 0ll of the a!ove
2,. Lhat /ould !e the output /hen t/o input sine /aves of frequency 5 B;> and 1 B;> passed
throu*h an amplifier in the medium si*nal
a. 5 B;> and 1 B;>
!. 1 B;> and " B;>
c. 5 B;> and 15 B;>
d. 0ll of the a!ove
22. The important application of ?chmitt tri**er is
a. To convert slo/ly varyin* input volta*e to a!rupt volta*e chan*e
!. To convert a!ruptly varyin* input volta*e into slo/ly varyin* output
c. To chan*e the frequency of the input
d. .one of these
2-. Aeanin* of decodin* is
a. 5inary addition
!. 6ata transmission
c. 6emultiplexin*
d. ?tora*e of !inary information
-. 0pproximately ho/ many num!er of *ates are incorporated in ??@ chip
a. 1"
!. 1
c. Excess of 1
d. Excess of 1
-1. The circuit dia*ram represents /hich one of the follo/in*
a. ;alf adder
!. Gull adder
c. Exor *ate
d. 0.6 *ate
-". Glip flop cannot !e called as
a. 5ista!le multivi!rator
!. 1 5it memory unit
c. latch
d. com!inational circuit
-#. The important use of lo/ pass filter in po/er supply is
a. To *et the re*ulation in the output volta*e
!. To filter out the ripple frequency
c. To increase the current ratin*
d. To convert 07 into 67
-). 5inary equivalent of the decimal num!er 1)5 is
a. 111
!. 1111
c. 111
d. 111
-5. In /hich of the follo/in* *ate the output /ill !e hi*h /hen all the maintained at hi*h level
a. .:R
!. 0.6
c. .0.6
d. EI:R
-%. Lhich of the follo/in* definition is true in the 6e Aor*anPs theorem
a. Aultiplication sym!ols are replaced !y addition sym!ol
!. 0ddition sym!ols are replaced !y Aultiplication sym!ol
c. Each of the terms are expressed in the complementary form
d. 0ll of the a!ove
-,. 2)"1'576 code fro a decimal num!er 1)- is
a. 1 1 11
!. 1111
c. 1111
d. .one of these
-2. 7om!inational circuit are mainly characteri>ed !y
a. :utput depends upon the previous state C presents state
!. :utput depends upon the input at that particular instant
c. :utput depends upon the presents state C the cloc$ state
d. :utput does not depends upon the input at all
--. 0 flip flop is defined as
a. 0 !ista!le device /ith t/o complementary outputs
!. It is memory element
c. It /ill respond to input and it is a !asic memory element
d. 0ll of the a!ove
1. Gour !it code is called
a. .i!!le
!. 5yte
c. Lord
d. Re*ister
0ns/erM-
1. c
". a
#. a
). !
5. a
%. !
,. d
2. d
-. a
1. !
11. a
1". c
1#. !
1). a
15. a
1%. a
1,. a
12. d
1-. c
". !
"1. a
"". c
"#. c
"). a
"5. !
"%. !
",. c
"2. d
"-. !
#. c
#1. d
#". d
##. c
#). d
#5. a
#%. c
#,. a
#2. d
#-. a
). a
)1. !
)". !
)#. a
)). !
)5. !
)%. a
),. a
)2. !
)-. !
5. !
51. a
5". c
5#. !
5). !
55. !
5%. !
5,. c
52. d
5-. !
%. c
%1. c
%". !
%#. a
%). a
%5. a
%%. d
%,. !
%2. !
%-. a
,. !
,1. c
,". c
,#. !
,). c
,5. a
,%. c
,,. a
,2. d
,-. d
2. a
21. c
2". c
2#. a
2). a
25. !
2%. d
2,. a
22. a
2-. c
-. a
-1. a
-". d
-#. !
-). a
-5. !
-%. d
-,. a
-2. !
--. d
1.a