EEE 4343

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Introduction to Digital Electronics
Department of Electrical and Computer Engineering
Florida International University
Instructor: Dr. Jeffrey Fan
MOS Field-Effect
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Transistors (MOSFETs)
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Device Structure
Physical structure of the enhancement-type NMOS transistor: (a) perspective view; (b)
cross-section.
Typically L = 0.1 to 3 m (channel length), less than 0.1 nanometer, n+ heavily
doped n-type silicon
W = 0.2 to 100 m (channel width), used as resistors or capacitors
Thickness of the oxide layer (t
ox
) is in the range of 2 to 50 nm.
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NMOS transistor with a positive voltage applied to the gate (G)
p-substrate for NMOS, depletion region is thin
B (Bulk), S (Source) and D (Drain) grounded
n channel is induced at the top of the substrate beneath the gate.
n type MOS called NMOS ( p type MOS is called ? )
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NMOS transistor with v
GS
> V
t
and with a small v
DS
applied. (Vt: threshold voltage)
Device acts as a resistance whose value is determined by v
GS
.
Channel conductance is proportional to v
GS
V
t
and thus i
D
is proportional to (v
GS

V
t
) v
DS
. Induced channel is also called inversion layer.
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The i
D
v
DS
characteristics of the MOSFET when the voltage applied
between drain and source, v
DS,
is kept small. The device operates as a
linear resistor whose value is controlled by v
GS
.
vGS Vt: excess gate voltage, effective voltage or overdrive voltage
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Operation of the enhancement NMOS transistor as v
DS
is increased.
Induced channel acquires a tapered shape, resistance increases as v
DS
increases.
v
GS
is kept constant at a value > V
t
Pinch-off on channel Tunneling effort
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Enhancement-type NMOS transistor operated with v
GS
> V
t
. (threshold voltage)
The voltage at saturation VSDsat = VGS Vt
Triode Region: Active region, overdrive region
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Cross-section of a CMOS integrated circuit.
PMOS transistor is formed in a separate n-type region, known as n well.
n-type body is used and the n device is formed in a p well.
SiO2 for isolation
Device Structure and Device Physics
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(a) Circuit symbol for the n-channel enhancement-type MOSFET.
(b) Modified circuit symbol with an arrowhead on the source terminal to distinguish it
from the drain and to indicate device polarity (i.e., n channel).
(c) Simplified circuit symbol to be used when the source is connected to the body or
when the effect of the body on device operation is unimportant.
S: Source G: Gate D: Drain B: Bulk
Regions of Operation of the Enhancement NMOS Transistor
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The relative levels of the terminal voltages of the enhancement NMOS
transistor for operation
- in the triode region (active region)
- in the saturation region.
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(a) An n-channel enhancement-type MOSFET with v
GS
and v
DS
applied and with
the normal directions of current flow indicated.
(b) The i
D
v
DS
characteristics for a device with k
n
(W/L) = 1.0 mA/V
2
.
(c) Triode, Saturation, and Cutoff (vGS Vt < 0) regions
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i
D
v
GS
characteristic for an enhancement-type NMOS transistor in
saturation (V
t
= 1 V, k
n
W/L = 1.0 mA/V
2
). Vt: threshold voltage
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Large-signal equivalent-circuit model of an n-channel MOSFET
operating in the saturation region.
Acting like a current source (because of saturation)
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Large-signal equivalent circuit model of the n-channel MOSFET (NMOS) in
saturation
Incorporating the output resistance r
o
. (acting as a load)
The output resistance models the linear dependence of i
D
on v
DS
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Effect of v
DS
on i
D
in the saturation region.
MOSFET parameter V
A
depends on the process technology and, for a given
process (lamda), is proportional to the channel length L.
lamda related to channel length modulation (ideal value = 0)
PMOS Device
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(a) Circuit symbol for the p-channel enhancement-type MOSFET. (PMOS)
(b) Modified symbol with an arrowhead on the source lead.
(c) Simplified circuit symbol - source is connected to the body.
(d) The MOSFET with voltages applied and the directions of current flow indicated.
Regions of Operation of the Enhancement PMOS Transistor
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The relative levels of the terminal voltages of the enhancement-type
PMOS transistor for operation
- in the triode region
- in the saturation region.
Summary of MOSFET Current Voltage (i-v) Characteristics
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NMOS and PMOS in conditions for triode and saturation regions