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Vivekananda Institute of Technology


Department of Electrical Engineering (Lab Manual)


Lab Manual
Power Electronics Lab-III
(Code-5EE7)




Experiment-1
Name of Experiment

Study the comparison of following power
electronic devices regarding ratings,
performance characteristics and
applications; Power Diode, Power
Transistor, Thyristor, Diac, Triac, GTO,
MOSFET, MCT AND SIT

Name of HOD

Prof.(Dr.) M. R. FAROOQI
Name of Lab In charge


Name of Lab technician

Mr. Yashwant Yadav



Department of Electrical Engineering



Experiment No.-3

AIM: - To Study the comparison of following power electronic devices regarding ratings,
performance characteristics and applications; Power Diode, Power Transistor, Thyristor, Diac,
Triac, GTO, MOSFET, MCT AND SIT

APPARATUS:
Power Diode, Power Transistor, Thyristor, Diac, Triac, GTO, MOSFET, MCT, SIT

THEORY:

Power switching devices such as power BJ Ts, power MOSFETs, SITs, IGBTs, Thyristor, TRIACs,
DIACs, GTOs, and other semi-conductor devices. Finding increasing applications in a wide range of
products with the availability of faster switching devices.

Power Diode;
Among all the static switching devices used in power electronics (PE), the power diode is perhaps
the simplest. It is a two terminal device, and with terminal A known as the anode and terminal K
known as the cathode. If terminal A experiences a higher potential compared to terminal K, the
device is said to be forward biased and a forward current (If) will flow through the device

Symbol and characteristics





Thyristor
A thyristor is a two- to four-lead solid-state semiconductor device with four layers of alternating N
and P-type material. They act exclusively as bistable switches, conducting when their gate receives a
current trigger, and continue to conduct while they are forward biased (that is, while the voltage across
the device is not reversed). A three-lead thyristor is designed to control the larger current of its two
leads by combining that current with the smaller current or voltage of its other lead - known as its

control lead. On the other hand, a two-lead thyristor is designed to 'switch on' if the potential difference
between its leads is sufficiently large - a value representing its breakdown voltage.
The thyristor is a four-layered, three terminal semiconductor device, with each layer consisting of
alternately N-type or P-type material, for example P-N-P-N. The main terminals, labelled anode and
cathode, are across all four layers. The control terminal, called the gate, is attached to p-type
material near the cathode. (A variant called an SCSSilicon Controlled Switchbrings all four
layers out to terminals.) The operation of a thyristor can be understood in terms of a pair of tightly
coupled bipolar junction transistors, arranged to cause a self-latching action:




Thyristors have three states:
1. Reverse blocking mode Voltage is applied in the direction that would be blocked by a diode
2. Forward blocking mode Voltage is applied in the direction that would cause a diode to
conduct, but the thyristor has not been triggered into conduction
3. Forward conducting mode The thyristor has been triggered into conduction and will remain
conducting until the forward current drops below a threshold value known as the "holding current"




Power Transistor
Power transistors are devices that have controlled turn-on and turn-off characteristics. These devices
are used as switching devices and are operated in the saturation region resulting in low on-state
voltage drop. They are turned on when a current signal is given to base or control terminal. The
transistor remains on so long as the control signal is present. The switching speed of modern
transistors is much higher than that of thyristors and are used extensively in dc-dc and dc-ac
converters. However their voltage and current ratings are lower than those of thyristors and are
therefore used in low to medium power applications


The difference in the two structures is obvious.

A power transistor is a vertically oriented four layer structure of alternating p-type and n-type. The
vertical structure is preferred because it maximizes the cross sectional area and through which the
current in the device is flowing. This also minimizes on-state resistance and thus power dissipation
in the transistor. The doping of emitter layer and collector layer is quite large typically 10
19
cm. A
special layer called the collector drift region (n-) has a light doping level of 10
14

Diac

The DIAC, or "diode for alternating current", is a diode that conducts current only after its break
over voltage, VBO, has been reached momentarily. When this occurs, the diode enters the region of
negative dynamic resistance, leading to a decrease in the voltage drop across the diode and, usually,
a sharp increase in current through the diode. The diode remains "in conduction" until the current
through it drops below a value characteristic for the device, called the holding current (IH) below this
value, the diode switches back to its high-resistance (non-conducting) state. This behavior is
bidirectional, meaning typically the same for both directions of current. Most DIACs have a three-
layer structure with breakover voltage around 30 V. Their behavior is somewhat similar to that of a
neon lamp, but it is much more precisely controlled and takes place at a lower voltage.




TRIAC
TRIAC, from Triode for Alternating Current, is a genericized trade name for an electronic
component that can conduct current in either direction when it is triggered (turned on), and is
formally called a bidirectional triode thyristor or bilateral triode thyristor. TRIACs are part of the
thyristor family and are closely related to silicon-controlled rectifiers (SCR). However, unlike SCRs,
which are unidirectional devices (that is, they can conduct current only in one direction), TRIACs
are bidirectional and so current can flow in either direction. Another difference from SCRs is that
TRIAC current flow can be enabled by either a positive or negative current applied to its gate
electrode, whereas SCRs can be triggered only by current going into the gate. To create a triggering
current, a positive or negative voltage has to be applied to the gate with respect to the MT1 terminal
(otherwise known as A1). Once triggered, the device continues to conduct until the current drops
below a certain threshold called the holding current. The bidirectionality makes TRIACs very
convenient switches for alternating current circuits, also allowing them to control very large power
flows with milliamperes-scale gate currents. In addition, applying a trigger pulse at a controlled
phase angle in an A.C. cycle allows control of the percentage of current that flows through the
TRIAC to the load (phase control), which is commonly used, for example, in controlling the speed
of low-power induction motors, in dimming lamps, and in controlling A.C. heating resistors.








GTO
A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power semiconductor
device. It was invented at General Electric. GTOs, as opposed to normal thyristors, are fully
controllable switches which can be turned on and off by their third lead, the GATE lead.

Normal thyristors (silicon-controlled rectifiers) are not fully controllable switches (a "fully
controllable switch" can be turned on and off at will). Thyristors can only be turned ON and cannot
be turned OFF. Thyristors are switched ON by a gate signal, but even after the gate signal is de-
asserted (removed), the thyristor remains in the ON-state until any turn-off condition occurs (which
can be the application of a reverse voltage to the terminals, or when the current flowing through
(forward current) falls below a certain threshold value known as the "holding current"). Thus, a
thyristor behaves like a normal semiconductor diode after it is turned on or "fired". The GTO can be
turned-on by a gate signal, and can also be turned-off by a gate signal of negative polarity.
Turn on is accomplished by a "positive current" pulse between the gate and cathode terminals. As
the gate-cathode behaves like PN junction, there will be some relatively small voltage between the
terminals. The turn on phenomenon in GTO is however, not as reliable as an SCR (thyristor) and
small positive gate current must be maintained even after turn on to improve reliability.




MOSFET
The metaloxidesemiconductor field-effect transistor (MOSFET,MOS-FET, or MOS FET) is a
transistor used for amplifying or switching electronic signals. Although the MOSFET is a four-
terminal device with source (S), gate (G), drain (D), and body (B) terminals, the body (or substrate)
of the MOSFET is often connected to the source terminal, making it a three-terminal device like other
field-effect transistors. Because these two terminals are normally connected to each other (short-
circuited) internally, only three terminals appear in electrical diagrams. The MOSFET is by far the
most common transistor in both digital and analog circuits, though the bipolar junction transistor was
at one time much more common.
Power MOSFETs structure is vertical and not planar. Using a vertical structure, it is possible for the
Transistor to sustain both high blocking voltage and high current. The voltage rating of the transistor
is a function of the doping and thickness of the N-epitaxial layer (see cross section), while the
Current rating is a function of the channel width (the wider the channel, the higher the current). In a
planar structure, the current and breakdown voltage ratings are both a function of the channel
dimensions (respectively width and length of the channel), resulting in inefficient use of the "silicon
estate". With the vertical structure, the component area is roughly proportional to the current it can
sustain, and the component thickness (actually the N-epitaxial layer thickness) is proportional to the
breakdown voltage. Power MOSFETs with lateral structure are mainly used in high-end audio
amplifiers and high-power PA systems. Vertical MOSFETs are designed for switching applications.


MCT
An MOS-controlled thyristor (MCT) is voltage-controlled fully controllable thyristor. It was
invented by IEEE. The MCT is similar in operation with GTO thyristor, but it has a voltage
controlled insulated gate. It has two MOSFETs of opposite conductivity types in its equivalent
circuit. One is responsible for turn-on and the another is responsible for turn-off. A thyristor with
only one MOSFET in its equivalent circuit, which can only be turned on (like normal SCRs), is
called an MOS-gated thyristor

Positive voltage on the gate terminal with respect to the cathode turns the thyristor to the on state.
Negative voltage on the gate terminal with respect to the anode, which is close to cathode voltage
during the on state, turns the thyristor to the off state.




SIT

Static induction transistor (SIT) is a high power, high frequency device. It is a vertical structure device
with short multichannel. Being a vertical device, the SIT structure offers advantages in obtaining
higher breakdown voltages than a Field-effect transistor (FET). For the SIT, it is not limited by the
surface breakdown between gate and drain, and can operate at a very high current and voltage.


RESULT

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