Beruflich Dokumente
Kultur Dokumente
by
Anurag Chaudhry
to the
Chaudhry to the Indian Institute of Technology, Delhi, for the award of the degree of
work carried out by him under my supervision and guidance. The research reports and
the results presented in this thesis have not been submitted in parts or in full to any other
iii
ACKNOWLEDGEMENTS
for his invaluable guidance and advice during every stage of this endeavour. I am greatly
indebted to him for his continuing encouragement and support without which, it would
not have been possible for me to complete this undertaking successfully. His insightful
and encouragement. I am grateful to both Dr. and Mrs. Krishnan for their loving
guidance and support. Their personal living example has provided me an unfailing
Special thanks are due to Prof. D. Nagchoudhuri for his valuable suggestions and
I would also like to express my heartfelt gratitude to my friend Vipin who has
helped me with the typing of the thesis. My special thanks to my friends Rakesh,
Partheepan, Swadesh, Ramnarayan and others, who always inspired me and particularly
helped me in difficult times. Thanks are due to Ritesh Sharma for helping me in the lab.
My sincere thanks and acknowledgements are due to my mother and brother who
Anurag Chaudhry
v
ABSTRACT
Silicon-on-insulator (SOI) has been the forerunner of the CMOS technology in the
last decade offering superior CMOS devices with higher speed, higher density, excellent
radiation hardness and reduced second order effects for submicron VLSI applications.
Recent experimental studies have invigorated interest in fully depleted (FD) SOI devices
because of their potentially superior scalability relative to bulk silicon CMOS devices.
Many novel device structures have been reported in literature to address the challenge of
short-channel effects (SCE) and higher performance for deep submicron VLSI
integration. However, most of the proposed structures do not offer simultaneous SCE
suppression and improved circuit performance. Others involve complicated processing
not amenable for easy integration into the present CMOS technology.
Dual-Material Gate (DMG) structure offers an alternative way of simultaneous
SCE suppression and improved device performance by careful control of the material
workfunction and length of the laterally amalgamated gate materials. A physics based
analytical model of surface potential along the channel in a FD DMG SOI MOSFET is
developed by solving 2-D Poisson’s equation. The model is used to investigate the
excellent immunity against SCE offered by the DMG structure. Further the model is
used to formulate an analytical expression of the threshold voltage, Vth. The results
clearly demonstrate the scaling potential of DMG SOI devices with a desirable threshold
voltage “roll-up” observed with decreasing channel lengths.
Numerical simulation studies were used to explore and compare the novel attributes
of DMG SOI MOSFET with a conventional single-material gate (SMG) device in terms
of circuit parameters like transconductance, drain conductance, voltage gain, leakage
current, on-current and Vth “roll-up”. An optimum gate length ratio of the two gate
lengths, L1/L2 = 1, and a workfunction difference, ∆W = 0.4 eV, between them
workfunctions is pointed by the simulation studies. In conclusion, we have demonstrated
the superior attributes offered by the DMG structure in FD SOI devices by developing a
simple analytical model and extensive simulation studies. The results presented in this
work are expected to provide incentive for further experimental exploration.
vii
TABLE OF CONTENTS
CHAPTER I.................................................................................................................................................1
INTRODUCTION...........................................................................................................................................1
1.1. MOTIVATION FOR PRESENT RESEARCH ........................................................................................1
1.2. NATURE OF THE PROBLEM ............................................................................................................3
1.2.1 Threshold voltage model ..............................................................................................................3
1.3. RECENT RESEARCH RELEVANT TO THE PROBLEM .........................................................................5
1.4. RESEARCH PROBLEM STATEMENT ................................................................................................5
1.5. THESIS ORGANIZATION..................................................................................................................6
CHAPTER II ...............................................................................................................................................9
SHORT-CHANNEL EFFECTS IN SOI: A REVIEW ....................................................................................9
2.1. INTRODUCTION..............................................................................................................................9
2.2. SHORT-CHANNEL EFFECTS .........................................................................................................11
2.2.1 Drain-Induced Barrier Lowering (DIBL)...................................................................................11
2.2.2 Back-Gate Biasing dependence ..................................................................................................14
2.1.3 Structure dependence .................................................................................................................15
2.3. PROPOSED SOLUTIONS ................................................................................................................17
2.3.1 Thin body FD SOI with raised source and drain .......................................................................18
2.3.2 Metal Source and Drain FDSOI MOSFET ................................................................................19
2.3.3 Metal gate FDSOI ......................................................................................................................20
2.3.4 Buried Insulator engineering .....................................................................................................21
2.3.5 Graded Channel FDSOI.............................................................................................................22
2.3.6 Ground-Plane FDSOI MOSFET ................................................................................................22
2.3.7 Multiple-Gate FDSOI MOSFET.................................................................................................23
2.3.8 HALO Doped SOI.......................................................................................................................25
2.4. DUAL-MATERIAL GATE ..............................................................................................................26
2.5. SUMMARY ...................................................................................................................................27
CHAPTER III............................................................................................................................................29
TWO-DIMENSIONAL MODEL OF SURFACE POTENTIAL IN A FULLY DEPLETED (FD)
DMG SOI MOSFET......................................................................................................................................29
3.1. INTRODUCTION............................................................................................................................29
3.2. DMG SOI STRUCTURE AND ITS PARAMETERS ............................................................................29
3.3. MATHEMATICAL FORMULATION .................................................................................................30
3.4. RESULTS AND DISCUSSION ..........................................................................................................37
3.4.1 Barrier Lowering........................................................................................................................37
ix
3.4.2 Gate-Workfunction Engineering.................................................................................................39
3.4.3 L1/L2 Ratio dependence ..............................................................................................................41
3.4.4 Body Doping...............................................................................................................................42
3.4.5 Gate-Oxide Thickness variation .................................................................................................44
3.4.6 Thin-Film Thickness variation ...................................................................................................45
3.4.7 Electric Field Profile..................................................................................................................46
3.5. SUMMARY ...................................................................................................................................47
CHAPTER IV ............................................................................................................................................49
THRESHOLD VOLTAGE MODELING AND EVIDENCE FOR SUBDUED SHORT-CHANNEL
EFFECTS ......................................................................................................................................................49
4.1. INTRODUCTION............................................................................................................................49
4.2. MATHEMATICAL FORMULATION .................................................................................................49
4.3. RESULTS AND DISCUSSION ..........................................................................................................52
4.3.1 Scaling Characteristics ..............................................................................................................52
4.3.2 Minimum Surface Potential........................................................................................................54
4.3.3 Substrate-Bias dependence.........................................................................................................55
4.3.4 Thin-film doping dependence .....................................................................................................56
4.3.5 Buried Oxide Thickness dependence ..........................................................................................58
4.3.6 Gate Material Engineering.........................................................................................................59
4.4. SUMMARY ...................................................................................................................................60
CHAPTER V..............................................................................................................................................61
TWO-DIMENSIONAL SIMULATION STUDIES......................................................................................61
5.1. INTRODUCTION............................................................................................................................61
5.2. COMPUTER SIMULATION RESULTS ..............................................................................................62
5.2.1 Performance comparison with SMG SOI MOSFET ...................................................................63
5.2.2 Scaling characteristics at a fixed high workfunction gate length, L1 .........................................66
5.2.3 Effect of L1/L2 ratio at a fixed channel length, L ........................................................................67
5.2.4 Effect of workfunction difference (∆W) at a fixed channel length, L..........................................72
5.3. SUMMARY ...................................................................................................................................75
CHAPTER VI ............................................................................................................................................77
CONCLUSIONS ...........................................................................................................................................77
APPENDICES...............................................................................................................................................81
REFERENCES..............................................................................................................................................87
LIST OF PUBLICATIONS...................................................................................................................................95
x
LIST OF TABLES
Table Page
Table 5.1 Device parameters used for simulation of DMG and SMG 62
SOI MOSFET’s.
xi
LIST OF ILLUSTRATIONS
Figure Page
1.1 Cross-sectional view of the bulk-Si (left) and SOI (right) CMOS 2
devices [1].
2.1 Surface potential variation along the position in channel for 0.1 V 12
and 1.5 V drain voltages (linear and saturated case).
2.5 Short channel effect in a FD SOI NMOS device with front gate oxide 14
of 9.2 nm, buried oxide of 400 nm, thin-film of 80 nm, with back
gate bias of 0 and –5 V [16].
2.6 Threshold voltage roll-off of FD SOI NMOS device with a front gate 15
oxide of 4.5 nm and various thin-film thicknesses [37].
2.7 Threshold voltage shift versus thin-film thickness for various channel 16
doping densities, biased at (a) VDS = 0.05 V, and (b) 1.5 V [38].
2.10 Comparison of device structures for (a) a conventional MOS and (b) 19
a raised source/drain thin-body transistor. Thin-body device structure
can effectively suppress sub-surface leakage current [44].
xiii
2.12 Threshold voltage roll-off due to DIBL and CS versus buried oxide 21
permittivity [52].
2.14 Ground plane under (a) source and drain edge [57] or (b) channel 23
region [58].
2.16 VTH roll-off and DIBL in double, triple, quadruple and Π-gate SOI 24
MOSFETs. Device width and thickness = 30 nm [70].
3.3 Surface potential versus position along channel for two different gate 40
metal workfunction differences.
3.4 Plot of surface potential versus position in channel for different gate 41
metal workfunctions φM1 and φM2 of M1 and M2, keeping the
difference (φM1 - φM2) constant.
xiv
3.6(b) Surface potential plot for two different substrate doping 43
concentrations for a SMG SOI.
3.8 Variation of surface potential along the channel for two different 45
thin-film thicknesses.
3.9 Variation of electric field along the channel shown for region close to 46
drain.
4.1 Threshold voltage variation with channel length compared for DMG 52
and SMG SOI devices. L1 is fixed at 0.1 µm for the DMG SOI
device and φM = 4.77 V for the SMG SOI MOS.
4.2 Threshold voltage variation with channel length for DMG SOI 53
devices.
4.5 Threshold voltage variation with channel length for substrate biasing 56
of 0 V and -2 V with L1 fixed at 50 nm.
4.6 Threshold voltage variation with channel length for different body 57
doping density.
4.7 Vth variation with channel length for different body doping density 57
with L1 = 50 nm.
4.8 Threshold voltage variation with channel length for different buried 58
oxide thickness.
xv
5.1 Output characteristics compared for a DMG SOI with SMG SOI 63
MOSFET.
5.2 Gate characteristics compared for a DMG SOI with SMG SOI 64
MOSFET.
5.3(a) Electric field profile along the surface of the channel for DMG and 65
SMG SOI MOSFET's.
5.3(b) Electron velocity profile along the surface of the channel for DMG 65
and SMG SOI MOSFET's.
5.5 Variation of Vth,lin, Vth,sat and VDIBL with gate length L1 for a DMG 67
SOI MOSFET at a fixed channel length, L = 0.3µm.
5.6 Variation of Ioff and Ion with gate length L1 for a DMG SOI MOSFET 68
at a fixed channel length, L = 0.3µm. L1 = 0 corresponds to SMG
SOI.
5.7(a) Variation of gm and gd with gate length L1 for a DMG SOI MOSFET 69
at a fixed channel length, L = 0.3 µm. L1 = 0 corresponds to SMG
SOI.
5.7(b) Variation of voltage gain, gm/gd, with gate length L1 for a DMG SOI 69
MOSFET at a fixed channel length, L = 0.3 µm. L1 = 0 corresponds
to SMG SOI.
5.8 Variation of Vth,lin, Vth,sat and VDIBL with gate length L1 for a DMG 70
SOI MOSFET at a fixed channel length, L = 0.2 µm.
5.9 Variation of Ioff and Ion with gate length L1 for a DMG SOI MOSFET 71
at a fixed channel length, L = 0.2 µm. L1 = 0 corresponds to SMG
SOI.
5.10(a) Variation of gm and gd with gate length L1 for a DMG SOI MOSFET 71
at a fixed channel length, L = 0.2 µm. L1 = 0 corresponds to SMG
SOI.
xvi
5.10(b) Variation of voltage gain, gm/gd, with gate length L1 for a DMG SOI 72
MOSFET at a fixed channel length, L = 0.2 µm. L1 = 0 corresponds
to SMG SOI.
5.12 Variation of Ioff and Ion with workfunction difference, ∆W for a DMG 74
SOI MOSFET at a fixed channel length, L = 0.3µm.
xvii
CHAPTER I
INTRODUCTION
thin surface layer (less than 0.5 µm of thickness) and are isolated from the silicon body
with a depletion layer of a p-n junction. The leakage current of this p-n junction
exponentially increases with temperature, and is responsible for several serious reliability
problems. Excessive leakage currents and high power dissipation limit the operation of
neighboring insulating tubs can cause latch-up failures and significantly degrade circuit
performance.
components and in conjunction with the lateral isolation, reduces various parasitic circuit
capacitances, and thus, eliminates the possibility of latch-up failures. Figure 1.1 shows
the cross-section of the bulk and SOI MOS devices. As shown in the figure, owing to the
buried oxide isolation structure, SOI technology offers superior devices with excellent
radiation hardness and high device density. Without the reverse-biased junctions used for
isolation as in bulk CMOS, leakage current is small. In addition, for scaling devices into
deep-submicron regime, SOI devices are more suitable with their steeper subthreshold
slope which facilitates scaling of the threshold voltage for low-voltage low-power
applications.
1
400 nm 5 – 8 nm
Field oxide 50 nm Si
Gate oxide
n+ poly p+ poly
n+ p n+ p+ n p+
n+ poly p+ poly
n+ n+ p+ p+ 100 – 200 nm Buried Oxide
p - epi n - Well
Fig. 1.1: Cross-sectional view of the bulk-Si (left) and SOI (right) CMOS devices [1].
Depending on the thickness of the silicon layer, MOSFETs will operate in fully
depleted (FD) or partially depleted (PD) regimes. When the channel depletion region
extends through the entire thickness of the silicon layer, the transistor operates in a FD
mode. PD transistors are built on relatively thick silicon layers with the depletion depths
of the fully powered MOS channel shallower than the thickness of the silicon layer. The
FD devices have several advantages compared to the PD devices: free from kink effect
[2], enhanced subthreshold swing [3], highest gains in circuit speed, reduced power
requirements and highest level of soft-error immunity [4]. Moreover it has been shown
that the total masks needed in the front-end process for FD SOI devices are less than half
During the past decade, excellent high-speed and performance have been achieved
through improved design, use of high quality material and shrinking device dimensions
[6-7]. However, with the reduction of channel length, control of short-channel effects is
voltage with decreasing channel length as well as drain induced barrier lowering (DIBL)
and hot-carrier effect at increasing drain voltage. In contrast to the bulk device, front
gate of the SOI device has better control over its active device region in the thin-film and
2
hence charge sharing effects from source/drain regions are reduced. However, the thin-
film thickness has to reduce to the order of 10 nm to significantly improve the device
function in the channel potential. In a DMG-MOSFET, the work function of metal gate 1
(M1) is greater than metal gate 2 (M2) i.e., φM1 > φM2 for an n-channel MOSFET and
vice-versa for a p-channel MOSFET. The aim of this work is, therefore, to study for the
first time the potential benefits offered by the DMG gate in suppressing the short-channel
The model provides an efficient tool for further design and characterization of the novel
The present work involves two distinct features, viz. (a) Two-dimensional modeling
of surface potential and threshold voltage of a FD SOI with DMG and (b) Numerical
simulation studies using MEDICI [10] to investigate novel features offered by the DMG
One of the key parameters that characterize short-channel effects is the degradation
of the device threshold voltage with decreasing channel length. The optimization of the
3
threshold voltage reduction is very important for both process and device engineers, and
plays a major role for achieving a highly improved CMOS technology performance.
Several models for the threshold voltage of short-channel FD SOI MOSFETs have
been reported in the literature [11-16]. Veeraraghavan and Fossum [11] formulated a
charge sharing model predicting a L-1 threshold voltage dependence. The charge sharing
modeling scheme assumes a constant surface potential, regardless of any drain bias, and
therefore does not account for the drain bias associated drain induced barrier lowering
(DIBL). Additionally, because of the coupling effect between the front gate and the back
gate, the charge sharing model in [11] requires the use of a priori empirical fitting
parameters, and therefore is not well suited for circuit analysis or statistical modeling.
Woo et al. [11] and Guo et al. [14] developed short-channel threshold voltage
models by solving the two-dimensional (2D) Poisson's equation. However, due to the
insights into the dependence of short-channel effects on the device parameters are
masked. This dependence is an important factor needed by both process and device
Banna et al. [15] used a quasi 2D approach and reported a threshold voltage model
but it requires the use of an empirical fitting parameter which needs additional accurate
measurements because small relative errors in measurements could give a large error in
In this work, a simple analytical model for the threshold voltage of short-channel
FD DMG SOI MOSFET is derived based on the approach suggested by Young [12] to
consider a parabolic trial function for the potential distribution in the silicon film.
4
1.3 Recent Research Relevant to the Problem
different gate-bias in split-gate [17] structure first proposed by M. Shur. The challenge to
satisfactorily realize the split-gate FET is the inherent fringing capacitance between the
two metal gates which increases as the separation between them is reduced.
In 1999, Long et. al. [8] proposed a new gate structure called the dual material gate
21] in which the channel field distribution is continuous, gate-material engineering with
simultaneous transport enhancement and suppressed SCEs. Zhou [22] suggested a way
in which the Hetero-Material Gate (HMG) MOSFET can be fabricated by inserting one
additional mask in the bulk CMOS processing technology and demonstrated the novel
However, with SOI rapidly emerging as the technology for next-generation VLSI,
work, for the first time we have developed an analytical model for surface potential and
short channel effects in a FD SOI MOSFET. The model results are verified by numerical
simulations which are further used to extract the novel features offered by the new device
structure.
5
dimensional analytical modeling and numerical simulation studies. This is accomplished
i) A physics based 2-D analytical model for the surface potential distribution in
based on the surface potential model to show the efficacy of the DMG
The dissertation is divided into six chapters and its outline is described as given
below:
Chapter I: Introduction.
Fundamental concepts related to SOI devices and its advantages & disadvantages,
This chapter analyzes the origin and effect of the short-channel effects in SOI
6
Chapter III: Two-dimensional model of the surface potential in a fully depleted
A physics based 2-D model for the surface potential variation along the channel in
developed. The model details the role of various MOS parameters like source/drain
and body doping concentrations, the lengths of the gate metals and their work
functions, applied drain and substrate biases, the thickness of the gate and buried
Chapter IV: Analytical modeling of threshold voltage and evidence for subdued
This chapter demonstrates the development of threshold voltage model for the DMG
SOI MOSFET and illustrates the role of DMG structure in suppressing short-channel
effects.
This chapter presents the novel features offered by the DMG SOI to enhance the
of DMG SOI MOSFET are compared with a conventional SMG SOI MOSFET.
7
CHAPTER II
SHORT-CHANNEL EFFECTS IN SOI: A REVIEW
2.1 Introduction
circuits, the dimensions of MOSFET’s have continued to shrink according to the scaling
law proposed by Dennard et al. [23]. However, the power consumption of modern
VLSI’s has become rather significant as a result of extremely large integration. Reducing
this power is strongly desired. Choosing a lower power supply voltage is an effective
We can say that the story of MOSFET scaling is the history of how to prevent
short-channel effects (SCE) [24]. SCE causes the dependence of device characteristics,
such as threshold voltage, upon channel length. This leads to the scatter of device
characteristics because of the scatter of gate length produced during the fabrication
process. Moreover, SCE degrades the controllability of the gate voltage to drain current,
which leads to the degradation of the subthreshold slope and the increase in drain off-
current. Thinning gate oxide and using shallow source/drain junctions are known to be
The detrimental short-channel effects occur when the gate length is reduced to the
same order as the channel depth. When the channel length shrinks, the absolute value of
threshold voltage becomes smaller due to the reduced controllability of the gate over the
channel depletion region by the increased charge sharing from source/drain. The
9
predominating features of SCE are a lack of pinchoff and a shift in threshold voltage with
decreasing channel length as well as drain induced barrier lowering (DIBL) and hot-
carrier effect at increasing drain voltage. Increased charge sharing from source/drain
degrades the controllability of gate voltage over channel current. This degradation is
described as charge sharing by the gate and drain electric fields in the channel depletion
layer in Poon and Yau’s model [25], which was reported as the first SCE model.
silicon wafer. What about thin-film SOI MOSFET’s ? They are attractive devices for
[26]. Young [12] analyzed the SCE using a device simulator, and concluded that SCE is
general, it is believed that thin-film SOI MOSFET’s have a higher immunity to SCE
compared with bulk MOSFET’s. This may be due to the difference in source/drain
junction depths between the two kinds of devices. For instance, the thickness of the
silicon film, which corresponds to the source/drain junction depth of 50–100 nm, is
considerably smaller than the source/drain junction depth (tSi ∼ 10-15 nm). Moreover,
there exits a strong coupling through the buried oxide in thin-film devices consequently,
very thin buried oxides (tb ∼ 100 nm) are needed which trade-offs with junction
10
2.2 Short-channel effects
induced barrier lowering (DIBL) effect which causes a reduction in the threshold voltage
as the channel length decreases. But, in an SOI device, SCE is also influenced by thin-
film thickness, thin-film doping density, substrate biasing, buried oxide thickness and
processing technology.
In the weak inversion regime there is a potential barrier between the source and the
channel region. The height of this barrier is a result of the balance between drift and
diffusion current between these two regions. The barrier height for channel carriers
indicated in Fig. 2.1, drain-induced barrier lowering (DIBL) effect [33] occurs when the
barrier height for channel carriers at the edge of the source reduces due to the influence of
drain electric field, upon application of a high drain voltage. This increases the number
of carriers injected into the channel from the source leading to an increased drain off-
current. Thus the drain current is controlled not only by the gate voltage, but also by the
drain voltage.
For device modeling purposes this parasitic effect can be accounted for by a
11
2.2
2.0
1.8
Surface Potential, φ S (V)
1.6
1.4
VDS = 1.5 V
1.2
1.0
VDS = 0.1 V
0.8
0.4
0.2
0.15 0.20 0.25 0.30 0.35 0.40 0.45
Lateral position, x (µ m)
Fig. 2.1: Surface potential variation along the position in channel for 0.1 V and 1.5 V drain
voltages (linear and saturated case).
In addition to the surface DIBL, there are two unique features determining SCEs in
thin-film SOI devices viz. (a) positive bias effect to the body due to the accumulation of
holes generated by impact ionization near the drain and (b) the DIBL effect on the barrier
height for holes at the edge of the source near the bottom, as illustrated in Fig. 2.2.
12
Holes generated near the drain due to impact ionization accumulate in the body
region, and then positively bias the body, reducing VT. This positive bias effect leads to
VT lowering for all gate lengths, including rather long gates such as 2 µm. The hole
generation rate due to impact ionization increases as gate length decreases under a fixed
value of VD. This effect is predominant in PD SOI nMOSFETs and results in so-called
The DIBL effect on the barrier height for holes reduces the positive bias effect to
the body because the accumulated holes in the body can more easily surmount the barrier
and flow to the source. As a result fewer number of accumulated holes remain which
weakens the VT lowering. The potential near the bottom in the thin-film increases as gate
length decreases due to the drain electric field. This leads to the lowering of the barrier
height for holes at the source edge near the bottom with shorter gate lengths. Fig. 2.3
compares the schematic energy band diagrams at threshold condition between short and
long channels MOSFET’s. The comparison is done near the bottom of the thin-film from
the source to the drain. With shorter gate lengths, the barrier height for holes near the
bottom is lowered by the influence of the drain electric field, and holes accumulated in
the body region can more easily flow into the source.
Fig. 2.3: Comparison of schematic energy band diagrams near the bottom of the body between
the long and short-channel fully depleted (FD) nMOSFET’s [24].
13
DIBL for electrons
Threshold Voltage
Accumulation of holes in body
due to impact ionization
DIBL for holes
Gate Length
Fig. 2.4: Effects of the three mechanisms on threshold voltage dependence on gate length [24].
Fig. 2.5 shows the short-channel effect of the FD SOI NMOS device with a front
gate oxide of 9.2 nm, a buried oxide of 400 nm, and a thin-film of 80 nm, biased at the
VSUB = - 5 V
Threshold Voltage (V)
VSUB = 0 V
tf = 9.2 nm
tSi = 80 nm
tbox = 400 nm
N A = 1x1017cm-3
14
As shown in the Fig. 2.5, at a negative back gate bias of –5 V, the threshold voltage
is lifted upward as compared to the back gate bias of 0 V. The extent of the upward shift
when the back gate bias becomes negative is smaller for a device with shorter channel
length, which implies that SCE seems to improve. With a shorter channel, the
controllability over the vertical direction of the channel region from the source/drain
seems to be reduced at a more negative back gate bias, hence its back gate bias effect is
smaller.
In addition to the drain and back gate biasing dependences, the SCE of an SOI
MOS device is also influenced by the thin-film thickness. Fig. 2.6 shows the threshold
voltage roll-off of the FD SOI NMOS device with a front gate oxide of 4.5 nm for
0.6
TSOI
Threshold Voltage Roll-off (V)
0.4 50 nm
40 nm
0.2 30 nm
NMOS
0
-0.2 TSOI
30 nm
-0.4 40 nm
PMOS 50 nm
-0.6
0 0.1 0.2 0.3 0.4 0.5 0.6
15
As shown in Fig. 2.6, when the thin-film thickness is reduced, for both NMOS and
PMOS devices, the SCE becomes smaller since the controllability of the front gate over
the active channel region is stronger and the source/drain has less influence in the
channel.
The short channel effect is also dependent on the thin-film doping density. Fig. 2.7
shows the threshold voltage shift versus the thin-film thickness of an SOI NMOS device
with a front gate oxide of 5 nm and a buried oxide of 360 nm for various channel doping
densities, biased at (a) VDS = 0.05 V, and (b) 1.5 V [38]. As shown in Fig. 2.7, when the
thin-film thickness exceeds a critical thickness the device operates in the PD regime.
Below this specific thickness the device operates in the FD regime. In the FD regime,
SCE is smaller with a lighter thin-film doping density, which is opposite to that in the PD
regime.
The influence of source/drain to the channel region via the buried oxide can also
worsen the SCE. Fig. 2.8 shows the short-channel effect of an SOI NMOS device with a
front gate oxide of 6 nm, thin-film of 100 nm for buried oxide thickness of 100 nm and
400 nm [39]. For a device with thinner buried oxide, the SCE is lessened.
∆VT(DIBL) (V)
∆VT(SCE) (V)
Fig. 2.7: Threshold voltage shift versus thin-film thickness for various channel doping densities,
biased at (a) VDS = 0.05 V, and (b) 1.5 V [38].
16
0.7
Gate width = 10 µm
0.5
with 100 nm Buried oxide
with 400 nm Buried oxide
0.4
0.1 1 10
Fig. 2.8: Threshold voltage versus channel length of an SOI NMOS device with front gate oxide
of 6 nm and a thin-film of 100 nm, and buried oxide of 100 nm and 400 nm [39].
With thinner buried oxide, the compressive stress is higher. Hence, during the
thermal process in fabrication, boron dopants in the thin film cannot diffuse easily. As a
result, the doping density of thin-film is higher and its threshold voltage is higher. As the
As the gate length of the MOSFET is scaled into the sub-100-nm regime for
improved performance and density, the requirements for body-doping concentration, gate
oxide thickness, and source/drain (S/D) doping profiles to control short-channel effects
become increasingly difficult to meet when conventional device structures based on bulk
silicon substrates are employed. The heavy channel doping required to provide adequate
suppression of SCE results in degraded mobility and enhanced junction leakage. The
aggressive reduction of the gate dielectric thickness for reduced SCE and improved drive
current leads to increased direct tunneling gate leakage current and standby power
consumption, and also raises concerns regarding the gate oxide reliability.
Fig. 2.9 schematically shows the electric field lines from the drain encroaching on
17
Fig. 2.9: Electric field lines from the drain [40]
As shown in the figure, the gate electrode shields the channel region from those
lines at the top of the device, but electric field lines penetrate the device laterally and
from underneath, through the buried oxide and the silicon wafer substrate causing the
Several device structures have been proposed to alleviate the degrading effect of
silicon films to eliminate the sub-surface leakage paths. A device structure that
implements this concept is the thin-body MOSFET [41]-[42]. In thin-body MOSFET, the
source-to-drain current is restricted to flow in a region close to the gate for superior gate
control, as illustrated in Fig. 2.10. Since it does not rely on a heavily-doped channel for
due to impurity scattering and threshold voltage fluctuation due to the random variation
of the number of dopant atoms in the channel region of nanoscale transistors [43].
18
raised
source/ L
gate
drain gate
spacer spacer
p+ n p+
p+ p+
Sub-surface SiO2
n-Si Leakage path
Fig. 2.10: Comparison of device structures for (a) a conventional MOS and (b) a raised
source/drain thin-body transistor. Thin-body device structure can effectively suppress sub-
surface leakage current [44].
The device shown in Fig. 2.10 has a thin-body on insulator structure [45], [46] and
is essentially an extension of the fully depleted SOI transistor. Since a thin source/drain
(S/D) region would contribute a high series resistance that degrades the drive current, a
raised S/D is introduced to avoid the series resistance problem. Reference [46]
Nevertheless, parasitic capacitances between the raised S/D and the gate are inherent in
this device structure. This is expected to adversely impact the device speed and power
between the raised S/D and the gate leads to an increase in series resistance.
Another proposed technique for reducing the source and drain resistance in thin-
film FDSOI MOSFETs consists in using metal (or silicide) source and drain. However,
the formation of Schottky barriers between the source/drain and the channel must be
avoided. The formation of a low (ideally zero) Schottky barrier is needed to insure the
formation of an ohmic contact between the source/drain and the channel. Since the
Schottky barrier varies with the applied gate bias in inversion-mode devices, it is more
19
appropriate to use accumulation-mode devices when metal source/drain structures are
used, as the surface potential remains constant when an accumulation channel is created
[47][48].
As the transistors are aggressively scaled down to sub-80 nm, problems such as
poly-Si gate depletion, boron penetration, and high gate resistance are aggravated [49].
Alternative gate electrodes, such as metal gates, are promising to address these issues.
Fig. 2.11 shows the threshold voltage versus the channel length of an FD SOI NMOS
device with a front gate oxide of 5 nm, a thin film of 100 nm and a buried oxide of 420
nm, using polysilicon and tantalum gates [50]. The use of tantalum gate is to facilitate
the adjustment of the threshold voltage of an SOI device without raising the thin-film
using metal (tantalum) as the front-gate material the problem of polysilicon gate
depletion associated with polysilicon gates is removed and therefore, SCE is smaller.
For PD SOI, metal gates with workfunction of 0.1 ∼ 0.2 eV away from the silicon
band edges enable the use of relatively low halo dose. This reduces the possibility of
metal gate with workfunction close to the band edges would require a high channel
doping to meet the off-current specifications. The need for high doping concentration
mobility degradation. Midgap gates are desirable for FD SOI MOSFETs in such a
scenario [51].
20
Threshold Voltage (V)
Fig. 2.12 shows the variation of threshold voltage roll-off due to DIBL and charge
sharing (CS) with permittivity of buried oxide for SOI MOSFETs with channel lengths
30 nm and 500 nm [52]. The reduction of buried oxide permittivity improves the DIBL
effect due to the reduced field penetration into the buried oxide from the drain, but, it
0.3
DIBL (30 nm)
Threshold voltage shift, ∆VT
0.2
0.1
CS (30 nm)
0
0 5 10 15 20
Fig. 2.12: Threshold voltage roll-off due to DIBL and CS versus buried oxide permittivity [52].
21
2.3.5 Graded Channel FDSOI
Fig. 2.13 shows the threshold voltage versus channel length of an FD SOI NMOS
device with a front gate oxide of 7 nm, a thin-film of 50 nm and a buried oxide of 120 nm
for a (a) uniformly doped channel and (b) graded channel [53]. In the device with graded
channel, in the centre of the channel, the doping density is the same as for the device with
uniformly doped channel whereas near source/drain regions more highly doped regions
are generated via the gate-edge (GE) implant techniques. As shown in the Fig, compared
to the uniformly doped channel, GE implanted graded channel improves the SCE
density of the thin-film. However, a very high doping density of the thin-film may lead
local region with high doping density than that of the channel region) and highly non-
uniformly doped channel also reduces DIBL effects in PD SOI MOSFETs [54].
To keep electric field lines from the drain from propagating into the channel region
a ground-plane can be formed in the silicon substrate underneath the buried oxide.
Threshold Voltage, Vth (V)
Uniform Channel (GE =0) Graded Channel (GE =12 x 1012 cm-2)
VDS = 0.1 V
VDS = 0.1 V
VDS = 1.5 V
VDS = 1.5 V
22
(a) (b)
Fig. 2.14: Ground plane under (a) source and drain edge [57] or (b) channel region [58].
Fig. 2.14 shows that a heavily doped electric-field stop can be placed in the
substrate either underneath the boundary between channel and source/drain or underneath
the channel region itself. This field stop effectively improves SCE and subthreshold
slope. [55][56].
To prevent the encroachment of electric field lines from the drain on the channel
region, special gate structures can be used as shown in Fig. 2.15. Such "multiple"-gate
devices include double-gate transistors, triple-gate devices such as the quantum wire [59],
the FinFET [60] and ∆-channel SOI MOSFET [61], and quadruple-gate devices such as
the gate-all-around device [29], the DELTA transistor [62][63], and vertical pillar
MOSFETs [64],[65].
Fig. 2.15: Double-gate, triple-gate, gate all around (GAA) and Π-gate SOI MOSFETs [70].
23
The double-gate concept was first reported in 1984 [66] and has been fabricated by
several groups since then. The use of a double gate results in enhanced transconductance,
due to the volume inversion effect [30][67] and better subthreshold slope. The
because it uses lateral epitaxial overgrowth or the etching of a cavity underneath the
devices [29][68]. Also, since the thickness of silicon between the two gates is smaller
than the physical gate length, the most critical lithography step in printing the double-gate
transistor becomes patterning of the thin-film, rather than the physical gate length
patterning [69].
Fig. 2.16 shows the DIBL and threshold voltage roll-off as a function of gate
voltage for double, triple, quadruple and Π-gate devices. The best performance is
obtained from the quadruple gate, but Π-gate is close second. The results show the
efficient shielding of the channel by the gate electrode from the electric field lines
500
Double Gate
DIBL (mV)
0
∆VT (mV)
-100
∆VT
-200
-300
20 30 40 50 60 70 80 90
Fig. 2.16: VTH roll-off and DIBL in double, triple, quadruple and Π-gate SOI MOSFETs. Device
width and thickness = 30 nm [70].
24
2.3.8 HALO Doped SOI
With continuous device scaling down to 100 nm channel length and less, the
HALO (or pocket) implantations have been introduced to better control the short-channel
effects. In digital applications HALO implantations have the purpose of reducing the off-
state leakage current while maximizing transistor linear and saturated drive currents.
While for analog applications it has been shown that HALO implantation is needed for
base-band applications using longer channel, it has detrimental effect for high speed
HALO implantation in PD SOI transistors increases the kink effect. HALO implantation
is also known to degrade the distortion characteristics when the SOI devices are used as
resistors [71]. Taur [72] demonstrated that a super-halo, a highly non-uniform 2-D
dopant profile in the channel and the body region effectively controls short-channel
barrier lowering both in the inversion and the body depletion region. When strong halo is
Recently, asymmetric single halo (SH) MOSFET structures have been introduced
for bulk [73]-[74] as well as for SOI MOSFETs [75]-[76] to adjust the threshold voltage
and improve the device SCE and hot carrier effects (HCE). These devices also achieve
higher drive currents by exploiting the velocity overshoot phenomenon [73], which is an
advantage in mixed mode analog/digital circuits. The schematic cross section of a typical
SH SOI n-type MOSFET is shown in Fig.2.17 [77]. It has been shown that these devices
25
Fig. 2.17: Cross-section of a single-halo (SH) SOI nMOSFET [77].
compared to the conventional SOI devices. The other advantages of SH devices over
conventional SOI like absence of kink, lower inherent parasitic bipolar junction transistor
At very short gate length, the CMOS device operation is asymmetrical even at very
small drain bias due to a higher drain side electric field resulting in short-channel effects
like DIBL. Unconventional asymmetrical structures have been employed to reduce the
drain side electric field and its consequent impact upon the channel. Dual-Material Gate
different workfunctions to introduce a potential step in the channel [8]. This leads to a
suppression of SCEs and an enhanced source side electric field resulting in increased
carrier transport efficiency in the channel region. And with its unique structure, DMG
offers flexibility in choosing thin-film thickness, channel doping, buried oxide thickness
26
and permittivity in short channel SOI MOSFET design. Furthermore, the DMG structure
may also be employed in symmetric structures, i.e., adding a layer of material with
different workfunction to both sides of the gate (like a LDD spacer). With the CMOS
processing technology already into the sub 100 nm regime [80], fabricating sub-100 nm
feature gate lengths should not preclude the possibility of realizing the potential benefits
and excellent immunity against SCE’s that the DMG SOI MOSFET promises.
2.5 Summary
SOI devices have been well recognized for their advantages in integrating deep
sub-micron CMOS devices. However, with the reduction of channel length, short-
channel effects are becoming increasingly important. SCE degrades the controllability of
the gate voltage over drain current due to increased charge-sharing from the drain/source
regions, which leads to the degradation of the subthreshold slope and the increase in drain
off-current. The last decade has seen increasing amount of effort focused to circumvent
controlled way is prohibitively difficult with extremely thin-films and scarce and
randomly positioned dopant atoms, implying yield and reliability problems. On the other
hand, buried oxides thinner than 100 nm are needed to avoid coupling, which trades-off
with junction capacitance considerations. Multiple gate SOIs offer a better immunity
against SCE but they are difficult to integrate in the current CMOS fabrication
27
CHAPTER III
TWO-DIMENSIONAL MODEL OF SURFACE POTENTIAL IN A
FULLY DEPLETED (FD) DMG SOI MOSFET
3.1 Introduction
In a long channel transistor, the “edge” effects along the sides of the channel can be
neglected. This aids in assuming that electric field lines are perpendicular to the surface
everywhere (i.e., they have component along y-direction only) and what is called a one-
Analyses based on such assumption fail to characterize adequately the devices with short
channels. If the channel is short (i.e., L is not much larger than the sum of the source and
drain depletion widths), a significant part of the electric field will have components along
both the y and x directions, the latter being the direction along the channel’s length. Thus
A physics based 2-D model for the surface potential variation along the channel in
by solving the two-dimensional Poisson’s equation. The model details the role of various
MOS parameters like source/drain and body doping concentrations, the lengths of the
gate metals and their work functions, applied drain and substrate biases, the thickness of
the gate and buried oxide in influencing the surface potential. It is simple in its
implemented using the 2-D device simulator MEDICI [10] is shown in Fig. 3.1 with gate
29
Gate
L1 L2
Source Drain
M1 M2
tf
tSi
n+ n+
tb
Burried oxide
x
p substrate
y
Substrate
Fig. 3.1: Cross-sectional view of an n-channel fully depleted DMG-SOI MOSFET.
metals M1 and M2 of lengths L1 and L2, respectively. The doping in the p type body and
values of front-gate oxide thickness, buried-oxide thickness and thin-film thickness are
Assuming that the impurity density in the channel region is uniform and the
influence of charge carriers and fixed oxide charge on the electrostatics of the channel
can be neglected, the potential distribution in the silicon thin-film, before the onset of
d 2φ ( x, y ) d 2φ ( x, y ) qN A
+ = for 0 ≤ x ≤ L, 0 ≤ y ≤ t Si (3.1)
dx 2 dy 2 ε Si
30
where NA is the film doping concentration, ε Si is the dielectric constant of silicon, tSi is the
film thickness and L is the device channel length. The potential profile in the vertical
φ ( x, y ) = φS ( x ) + c1 ( x ) y + c2 ( x ) y 2 (3.2)
are functions of x only. In the DMG structure, since the gate is divided into two parts the
The Poisson’s equation is solved separately under the two gate regions using the
1. Electric flux at the gate/front-oxide interface is continuous for both the metal gates.
dφ1 ( x, y ) ε ox φS 1 ( x ) − VGS 1
'
d φ 2 ( x, y ) ε ox φS 2 ( x ) − VGS 2
'
where ε ox is the dielectric constant of the oxide, t f is the gate oxide thickness, and
where VGS is the gate-to-source bias voltage, VFB1, f and VFB 2, f are the front-channel
31
2. Electric flux at the interface of buried oxide and the back-channel is continuous for
dφ1 ( x, y ) ε ox VSUB − φ B ( x )
'
d φ 2 ( x, y ) ε ox VSUB − φB ( x )
'
where tb is the buried oxide thickness, φB ( x ) is the potential function along the
φ1 ( L1 , 0 ) = φ2 ( L1 , 0 ) (3.9)
dφ1 ( x, y ) d φ ( x, y )
= 2 (3.10)
dx x= L
dx x= L
1 1
junction.
The constants c11 ( x ) , c12 ( x ) , c21 ( x ) and c22 ( x ) in equations (3.3) and (3.4) can
32
From (3.3), (3.5) and (3.7) we can obtain the following relations for the region
under metal 1:
ε ox φS 1 ( x ) − VGS 1 φ ( x ) − VG' S 1
'
ε ox
c11 ( x ) = = C f S1 where C f = (3.14)
ε Si tf ε Si tf
ε ox VSUB − φ B ( x ) VSUB − φB ( x )
' '
ε ox
c11 ( x ) + 2c12 ( x ) tSi = = Cb where Cb = (3.15)
ε Si tb tb tb
Similarly for the region under metal 2, we obtain the following expressions using
ε ox φ S 2 ( x ) − VGS 2 φ S 2 ( x ) − VG' S 2
'
ε ox
c21 ( x ) = = Cf where C f = (3.17)
ε Si tf ε Si tf
ε ox VSUB − φ B ( x ) V ' −φ ( x)
'
ε ox
c21 ( x ) + 2c22 ( x ) tSi = = Cb SUB B where Cb = (3.18)
ε Si tb tb tb
C C C C
'
VSUB + VGS' 1 f + f − φS 1 ( x ) 1 + f + f
c12 ( x ) = Cb CSi Cb CSi
C
tSi2 1 + 2 Si
Cb
Thus substituting the values of c11 ( x ) and c12 ( x ) in (3.3) and using φ1 ( x, y ) in
33
d 2φ S1 ( x )
− αφ S 1 ( x ) = β1 (3.19)
dx 2
where
2 (1 + C f Cb + C f CSi )
α= and
tSi2 (1 + 2 CSi Cb )
qN A C f Cb + C f CSi 1
β1 = − 2VGS' 1 2 − 2VSUB 2
'
ε Si tSi (1 + 2 CSi Cb ) tSi (1 + 2 CSi Cb )
β1
φS 1 ( x ) = A exp ( λ1 x ) + B exp ( λ2 x ) − (3.20)
α
β1
A+ B − = Vbi (3.21)
α
C C C C
'
VSUB + VGS' 2 f + f − φS 2 ( x ) 1 + f + f
c22 ( x ) = Cb CSi Cb CSi
C
tSi2 1 + 2 Si
Cb
Thus substituting the values of c21 ( x ) and c22 ( x ) in (3.4) and using φ2 ( x, y ) in
d 2φ S 2 ( x )
− αφ S 2 ( x ) = β 2 (3.22)
dx 2
34
qN A C f Cb + C f CSi 1
β2 = − 2VGS' 2 2 − 2VSUB 2
'
ε Si tSi (1 + 2 CSi Cb ) tSi (1 + 2 CSi Cb )
β2
φ S 2 ( x ) = C exp ( λ1 ( x − L1 ) ) + D exp ( λ2 ( x − L1 ) ) − (3.23)
α
β2
Vbi + VDS = C exp ( λ1 L2 ) + D exp ( λ2 L2 ) − (3.24)
α
Using boundary conditions (3.9) and (3.10) we get the following expressions
where
qN A C f Cb + C f CSi 1
σ 1 = − β1 α = − VGS' 1 − VSUB
'
1 + C f Cb + C f CSi
(3.27)
ε Si 1 + C f Cb + C f CSi
qN A C f Cb + C f CSi 1
and σ 2 = − β 2 α = − VGS' 2 − VSUB
'
1 + C C + C C
(3.28)
ε Si 1+ C C + C C
f b f Si f b f Si
Solving (3.25) and (3.26), we obtain the relationship among the coefficients A, B, C
and D as
C = A exp ( λ1 L1 ) +
(σ 1 − σ 2 ) and
2
D = B exp ( λ2 L1 ) +
(σ 1 − σ 2 )
2
35
(Vbi − σ 2 + VDS ) − exp ( −λ1 ( L1 + L2 ) ) (Vbi − σ 1 ) − (σ 1 − σ 2 ) cosh ( λ1 L2 )
A= exp ( −λ1 ( L1 + L2 ) )
1 − exp ( −2 λ1 ( L1 + L 2 ) )
(Vbi − σ 1 ) − (Vbi − σ 2 + VDS ) exp ( −λ1 ( L1 + L2 ) ) + (σ 1 − σ 2 ) cosh ( λ1L2 ) exp ( −λ1 ( L1 + L2 ) )
B=
1 − exp ( −2λ1 ( L1 + L2 ) )
(σ − σ 2 )
C = A exp ( λ1 L1 ) + 1 and D = B exp ( λ2 L1 ) + 1
(σ − σ 2 )
2 2
obtained for a dual-material gate FD SOI MOSFET can be easily reduced to the form
Analogous statement can be made for the case when L1 → 0 . In that case C and D
equation (3.20) can be used to characterize the surface potential variation along the front-
channel. So the model yields consistent results for the case of an ordinary single material
gate structure when either of the gate metal lengths approach zero.
channel surface potential. Since the sub-threshold leakage current often occurs at the
position of minimum surface potential, therefore, the influence of DIBL on the sub-
threshold behavior of the device can be monitored by the minimum surface potential.
DIBL can be demonstrated by plotting the surface potential minima as a function of the
position along the channel for different drain bias conditions. Due to the co-existence of
the two dissimilar gate metals, M1 and M2, having a finite workfunction difference, the
position of minimum surface potential, xmin, will be solely determined by the gate metal
36
M1. The minimum potential of the front-channel can be calculated from (3.20) by
solving
dφ S 1 ( x )
=0
dx x = x
min
1 B
xmin = ln (3.29)
2λ1 A
The electric field pattern along the channel determines the electron transport
velocity through the channel. The electric field component in the x–direction, under the
dφ1 ( x, y ) dφ S 1 ( x )
E1 ( x ) = = = Aλ1 exp ( λ1 x ) + Bλ2 exp ( λ2 x ) (3.31)
dx y =0
dx
d φ2 ( x, y ) dφS 2 ( x )
E2 ( x ) = = = C λ1 exp ( λ1 ( x − L1 ) ) + Dλ2 exp ( λ2 ( x − L1 ) ) (3.32)
dx y =0
dx
To verify the proposed analytical model, the 2-D device simulator MEDICI was
used to simulate the surface potential distribution within the silicon thin-film and
In Fig. 3.2, the calculated and simulated values of surface potential are plotted
against the horizontal distance x for L = 0.2 µm at different drain biases. It is seen from
37
the figure that due to the presence of the dual-material gate there is no significant change
in the potential under the gate M1 even as the drain bias is increased. Hence, the channel
region under M1 is “screened” from the changes in the drain potential, i.e., the drain
voltage is not absorbed under M1 but under M2. As a consequence, VDS has only a very
small influence on drain current after saturation and the drain conductance is reduced. It
is evident from the figure that there is a negligible shift in the point of the minimum
potential and it lies almost at the interface of the two metal gates irrespective of the
applied drain bias. Therefore, DIBL is considerably reduced for the DMG-SOI
MOSFET. The model predictions correlate well with the simulation results proving the
S M1 M2 D
3.0
VDS = 1.75 V
VGS = 0.15 V
NA = 6 x 1016 cm-3
Surface Potential (in volts)
L = 0.2 µm
2.0 φM1 = 4.77 V VDS = 0.95 V
φM2 = 4.1 V
VDS = 0.25 V
1.0
MEDICI
Model
0.0
0.0 0.05 0.10 0.15 0.20
Position in channel (in µm)
Fig. 3.2(a): Surface channel potential profiles of DMG-SOI MOSFET for different drain biases
with channel length L = 0.2 µm as obtained from the analytical model and 2-D MEDICI
simulation. The screening effect is distinctly visible.
38
3.0
VGS = 0.15 V VDS = 1.75 V
NA = 6 x 1016 cm-3
L = 0.2 µm
VDS = 0.25 V
1.0
VDS = 1.75
VDS = 0.95
VDS = 0.25
0.0
0.0 0.05 0.10 0.15 0.20
Position in channel (in µm)
Fig. 3.2(b): Surface channel potential profiles of SMG-SOI MOSFET for different drain biases
with channel length L = 0.2 µm as obtained from the 2-D MEDICI simulation.
It is evident from Fig. 3.2(b) that with increasing drain bias the channel potential
minima shifts substantially thus lowering the barrier for the charge carriers in a
Fig. 3.3 shows the variation of surface potential along the channel for two different
workfunction values of gate metal M1. As it can be seen from the figure, choosing a gate
metal M1 with a higher workfunction leads to a better control of the channel potential
minima by M1. Therefore, more the step potential in the channel more will be the
screening of the control gate, M1, against the drain potential variation.
surface potential on the workfunction difference between the two gate metals M1 and
M2. This dependence of surface potential on the difference in workfunction of the two
39
1.5 VGS = 0.15 V
VDS = 0.25 V
L = 0.2 µm
Surface Potential (in volts) φM2 = 4.1 V
NA = 6 x 1016 cm-3
1.0
φM1 = 4.77 V
φM1 = 5.1 V
0.5
MEDICI
Model
0.0
0.0 0.05 0.10 0.15 0.20
gate materials can lend great flexibility in choosing the gate materials for a Dual-Material
Gate (DMG) SOI in case the absolute values do not exercise a significant influence on
the variation of surface potential along the channel. Fig. 3.4 shows the variation of
surface potential along the channel for two different gate metal workfunctions φM1 and
φM2 of M1 and M2, keeping the difference (φM1 - φM2) constant. It is evident from the
figure that the minima and the slope of the surface potential at the interface are not the
same for the two different cases depicted. Upon careful observation it is evident that the
surface potential dependence on workfunction of the two gate materials is not restricted
to the difference between the workfunctions, rather it depends directly on the absolute
40
1.5 VGS = 0.15 V
VDS = 0.25 V
L = 0.2 µm
Surface Potential (in volts) NA = 6 x 1016 cm-3
φM1 - φM2 = 0.67 V
1.0
1
φM1 = 4.67 V
1
φM2 = 4.0 V
2
φM1 = 4.77 V
0.5 2
φM2 = 4.1 V
MEDICI
Model
0.0
0.0 0.05 0.10 0.15 0.20
Fig. 3.5 shows the variation of surface potential with the normalized channel
position for different combination of gate lengths L1 and L2 of M1 and M2, respectively,
keeping the sum of total gate length, (L1+L2), to be constant. As it is seen from the figure
the position of minimum surface potential, lying under M1 is shifting toward the source
as the length of gate M1 is reduced. This causes the peak electric field in the channel to
shift more towards the source end and thus there is a more uniform electric field profile in
the channel. Moreover, it is observed that the channel potential minima for the three
cases are not the same. This happens because as L1 increases, a portion of the channel
41
1.5 VGS = 0.15 V
VDS = 0.25 V
L = 0.2 µm
φM1 = 4.77 V
Surface Potential (in volts) φM2 = 4.1 V
NA = 6 x 1016 cm-3
1.0
1
2 1 L1/L2 = 0.08/0.12
3
2 L1/L2 = 0.10/0.10
0.5
3 L1/L2 = 0.12/0.08
MEDICI
Model
0.0
0.0 0.05 0.10 0.15 0.20
This also leads to a desirable Vth “roll-up” with decreasing channel length as
discussed in section 4.3.1. The validity of the approach developed to model the surface
potential and electric field in the channel for different combinations of L1 and L2 of M1
Fig. 3.6 shows the surface potential variation with the normalized channel position
for different body doping concentrations. As can be seen from the figure that as the
doping concentration increases, the shielding of the channel region under the gate M1 is
increased with an increase in the channel potential step. Hence DIBL decreases and the
DMG is contrary to the behaviour observed for a SMG SOI device as shown in
Fig. 3.6(b) and thus allows for easy scalability of the DMG SOI devices.
42
1.5
VGS = 0.15 V
VDS = 0.25 V
L = 0.2 µm
φM1 = 4.77 V
Surface Potential (in volts) φM2 = 4.1 V
1.0
NA = 6 x 1016 cm-3
NA = 1 x 1017 cm-3
0.5
MEDICI
Model
0.0
0.0 0.05 0.10 0.15 0.20
1.5
VGS = 0.15 V
VDS = 0.25 V
L = 0.2 µm
φM = 4.1 V
Surface Potential (in volts)
NA = 6 x 1016 cm-3
0.5
0.0
0.0 0.05 0.10 0.15 0.20
43
3.4.5 Gate-Oxide Thickness variation
Fig. 3.7 depicts the variation of the surface potential with the channel position for
different values of oxide thickness for DMG FD SOI MOSFET. The magnitude of the
potential step increases as the work function difference increases. According to the
figure, the step voltage increases as the oxide thickness decreases. As the step voltage
increases so is the screening of region under M1 from drain voltage variation and
therefore, more reduction in DIBL. On the other hand, with increasing oxide thickness,
M1 and M2 lose their control over the channel, which leads to increase in the DIBL.
Therefore, continuous scaling down of the oxide thickness reduces DIBL but on the
other hand, oxide thickness cannot be scaled down to very small values otherwise
tunneling through the thin oxide and hot-carrier effects become prominent.
φM2 = 4.1 V
NA = 6 x 1016 cm-3 tf = 50 A
1.0
tf = 100 A
0.5
MEDICI
Model
0.0
0.0 0.05 0.10 0.15 0.20 0.25 0.30
44
3.4.6 Thin-Film Thickness variation
When the thin-film thickness is reduced the controllability of the front-gate over
the surface channel becomes stronger in comparison to the influence exerted by the
source/drain. Fig. 3.8 shows the variation of surface potential along the channel length
for two different thin-film thicknesses. On careful observation, it is visible that the step
potential induced by the dual-material gate structure increases as the thin-film thickness
is scaled to 50 nm. This increase in step potential ensures better screening of the “control
With the scaling of SOI devices into the 0.1 µm regime thin-film thicknesses of the
such thin-film becomes more and more challenging because of the intrinsic variation in
tSi = 1500 A
0.5
MEDICI
Model
0.0
0.0 0.05 0.10 0.15 0.20 0.25 0.30
45
the thickness across a wafer as well as the high parasitic source/drain resistance
associated with very thin silicon films [82]. In such a scenario Dual-Material Gate
In Fig. 3.9, the electric distribution near the drain is shown for SMG and DMG FD
SOI MOSFET’s with a channel length L = 0.4 µm. It is evident from the figure that the
presence of a lower function gate at the drain side reduces the peak electric field
considerably. This reduction of the electric field experienced by the carriers in the
channel can be interpreted as the reduction of the hot-carrier effect at the drain end.
Therefore, further scaling of oxide thickness is possible in the DMG structure. As shown
in the figure the results from the analytical model are in close proximity of the simulation
results.
350
SMG-SOI φM = 4.77 V
300 L = 0.4 µm
250
200
150
100 MEDICI (DMG)
50 Model (DMG)
MEDICI (SMG)
0
0.30 0.32 0.34 0.36 0.38 0.40
46
3.5 Summary
material gate (DMG) SOI MOSFET is developed by solving the 2-D Poisson’s equation
with appropriate boundary conditions. Expressions for electric field and minimum
surface potential in the channel are derived based on the model developed for surface
potential. The effect of various MOS parameters like body doping concentration, the
lengths of the gate metals and their work functions, applied drain biases, the thickness of
the gate oxide and buried oxide on the surface potential is studied. The results predicted
by the model are validated by comparing with 2-D MEDICI simulations. The calculated
values of the surface potential in the silicon thin-film obtained from the proposed model
correlate well with the simulated results. The results unambiguously establish that the
effects due to a step-function in the channel potential profile. The shift in the surface
channel potential minima position is negligible with increasing drain biases. The electric
field in the channel at the drain end is also reduced leading to reduced hot-carrier effect.
A significant result pointed by this formulation is the tunability of the surface potential by
between the gate material workfunctions and the lengths of the two gate metals, which
47
CHAPTER IV
THRESHOLD VOLTAGE MODELING AND EVIDENCE FOR SUBDUED
SHORT-CHANNEL EFFECTS
4.1 Introduction
inversion channel forms, which can then conduct a high drain current. With the
continued down-scaling of all geometries to achieve the projected high packing density in
submicron MOS devices, threshold voltage reduces with decreasing channel length.
Therefore, the optimization of the threshold voltage reduction is very important for both
process and device engineers, and plays a major role for achieving a highly improved
One of the key parameters that characterizes short-channel effects (SCE) is the
degradation of the device threshold voltage with decreasing channel length. In this
chapter an analytical expression of threshold voltage is derived for a fully depleted DMG
SOI MOSFET based on the two-dimensional surface potential model developed in the
last chapter. The mathematical formulation aids in quick visualization of the importance
of various device parameters on the performance of a DMG SOI device and allows for a
good grip on the underlying device physics. The efficacy of the DMG structure in
subduing the short-channel effects (SCE) is also studied in relation to various device
parameters.
Threshold voltage, Vth , is that value of the gate voltage VGS at which a conducting
channel is induced at the surface of SOI MOSFET. In a fully depleted thin-film SOI, it is
49
desirable that the front channel turns on before the back channel. Therefore, the
threshold voltage is taken to be that value of gate source voltage for whichφS ,min = 2φF ,
where φF is the difference between the extrinsic Fermi level in the bulk region and the
intrinsic Fermi level. In the case of DMG structure, due to the co-existence of metal
gates, M1 and M2, with different work functions, the surface potential minima is solely
determined by the metal gate with higher work function. So the threshold voltage is
defined as the value of VGS at which the minimum surface potential φS 1,min equals 2φ F .
Hence we can determine the value of threshold voltage as the value of VGS by solving:
φS 1,min = 2 AB + σ 1 (4.1)
comparison to the front oxide capacitance (Cf) and thin-film capacitance (CSi), we can
50
{ }
Vbi1 = Vbi 1 − exp ( −λ1 ( L1 + L2 ) ) + VDS − ( u − v ) cosh ( λ1 L2 ) − v + u exp ( −λ1 ( L1 + L2 ) )
{ }
Vbi 2 = Vbi exp ( λ1 ( L1 + L2 ) ) − 1 − VDS + ( u − v ) cosh ( λ1 L2 ) + v − u exp ( λ1 ( L1 + L2 ) )
A=
(
Vbi1 − VGS 1 − exp ( −λ1 ( L1 + L2 ) ) )
2sinh ( λ1 ( L1 + L2 ) )
B=
(
Vbi 2 + VGS exp ( λ1 ( L1 + L2 ) ) − 1 )
2sinh ( λ1 ( L1 + L2 ) )
Upon solving for Vth , we obtain an expression for the threshold voltage as
Vth =
( −Vφ1 + Vφ21 − 4ξVφ 2 ) (4.2)
2ξ
where
( ) (
Vφ 1 = Vbi1 1 − exp ( λ1 ( L1 + L2 ) ) + sin 2 h ( λ1 ( L1 + L2 ) ) ( 4φF − 2u ) − Vbi 2 1 − exp ( −λ1 ( L1 + L2 ) ) )
Vφ 2 = Vbi1Vbi 2 − sin 2 h ( λ1 ( L1 + L2 ) ) ( 2φF − u )
2
The dependence of Vth on the length and material workfunction of the two gate
metals is a significant result of the above formulation. This feature which is unique to
DMG SOI lends another degree of freedom towards controlling and engineering the
charge carriers in the channel to simplify the subsequent analysis. Therefore, the
threshold voltage expression derived is not strictly based on the common notion of Vth
which indicates a physical background of moderate inversion, i.e., the transition between
weak and strong inversion. A more rigorous analysis involves solving the 2-D Poisson’s
51
equation taking the mobile carrier density into account (in addition to the depletion
charge) but that would lead to a computationally inefficient analytical model requiring
voltage from the model are compared with those obtained from 2-D MEDICI [10]
0.7
MEDICI (DMG)
Model (DMG)
MEDICI (SMG)
0.6
Threshold Voltage (V)
0.5
0.4
0.1
0.1 0.2 0.4 0.6 0.8 1.0
Channel Length (in µm)
Fig. 4.1: Threshold voltage variation with channel length compared for DMG and SMG SOI
devices. L1 is fixed at 0.1 µm for the DMG SOI device and φM = 4.77 V for the SMG SOI MOS.
52
It is seen that the threshold voltage obtained from the analytical model tracks the
simulation values very well but with an insignificant negative offset of approximately 20-
50 mV. This less than 10% discrepancy in the results is due to the neglect of the
inversion layer charge at threshold at the front interface [83]. As shown in the figure
threshold voltage rolls-off for a conventional single material gate (SMG) SOI (even with
a higher workfunction) in contrast to Vth roll-up for a fully depleted DMG SOI MOSFET.
This is due to the presence of two different gate metals having a finite workfunction
Fig. 4.2 shows the threshold voltage variation as a function of channel length for
DMG SOI MOSFET with L1 fixed at 50 nm. It is evident from the figure that the benefit
0.6
0.5
Threshold Voltage (V)
0.4
0.3
VDS = 0.05 V
0.2
φM1 = 4.77 V
φM2 = 4.1 V MEDICI
0.1 L1 = 0.05 µm Model
NA = 6 x 1016 cm-3
0
0.05 0.10 0.15 0.20 0.25 0.30 0.35
Channel Length (in µm)
Fig. 4.2: Threshold voltage variation with channel length for DMG SOI device compared
between MEDICI simulations and model prediction. L1 is kept fixed at 50 nm.
53
4.3.2 Minimum Surface Potential
length L (=L1+L2) for fully depleted DMG SOI with silicon thin-film thickness tSi = 100
nm and 50 nm is shown in Fig. 4.3. In a fully depleted (FD) MOSFET, the minimum
channel potential is sensitive to thin-film thickness. But as observed from the figure, the
threshold voltage, is effectively reduced due to the co-existence of gate materials having
1.0
VDS = 0.05 V φM1 = 4.5 V
VGS = 0.15 V φM2 = 4.1 V
Minimum Surface Potential (V)
0.8
tSi = 500 A
tSi = 1000 A
0.6
MEDICI
Model
0.4
0 0.2 0.4 0.6 0.8 1.0
Channel Length (in µm)
Fig. 4.3: Minimum surface potential as a function of channel length for two different thin-film
thicknesses as extracted from MEDICI and the analytical model. L1 is kept fixed at 0.1 µm.
54
4.3.3 Substrate-Bias dependence
Fig. 4.4 shows the variation of threshold voltage with channel length for two
different substrate biases obtained from the analytical expression and 2-D simulations. It
is observed from the figure that in contrast to a SMG, the Vth “rolls-up” with decreasing
channel length is due to the DMG structure. As shown in the figure at a negative back
gate bias of –2 V, the threshold voltage is lifted upward as compared to a back gate bias
of 0 V. The extent of the upward shift when the back gate bias becomes negative is
smaller for a device with shorter channel length due to a reduced control by source/drain
over the channel region at a negative bias. Fig. 4.5 shows the threshold voltage variation
with decreasing channel length with L1 fixed at 50 nm. It is seen that Vth “rolls-up” at a
negative substrate bias even with technology scaled to 100 nm. This is due to the co-
0.5
0.4
0.1
0.1 0.2 0.3 0.4 0.5 0.6
Channel Length (in µm)
Fig. 4.4: Threshold voltage variation with channel length for different substrate biasing.
55
0.6
MEDICI (VSUB = -2 V)
MEDICI (VSUB = 0 V)
Model (VSUB = -2 V)
0.5
Threshold Voltage (V)
0.4
0.3
0.2
VDS = 0.05 V tb = 400 nm
φM1 = 4.77 V tSi = 50 nm
0.1 φM2 = 4.1 V tf = 5 nm
L1 = 0.05 µm NA = 6 x 1016 cm-3
0
0.05 0.10 0.15 0.20 0.25 0.30 0.35
Channel Length (in µm)
Fig. 4.5: Threshold voltage variation with channel length for substrate biasing of 0 V and -2 V
with L1 fixed at 50 nm.
Fig. 4.6 shows the threshold voltage variation with decreasing channel length
obtained from the value calculated using the analytical expression and MEDICI
simulation for two different body doping densities. As shown in the figure, threshold
voltage increases with increased body doping and a “roll-up” in the characteristics is
observed at decreasing channel lengths. This can be attributed to the presence of two
different gate materials having a finite workfunction difference and properly engineered
gate lengths. Fig. 4.7 shows the thin-film doping density dependence of threshold
voltage as the gate length is scaled down to 0.01µm for a DMG SOI MOSFET. As
shown in the figure, Vth increases with increase in body doping density.
56
0.7
MEDICI (NA = 1 x 1017 cm-3)
17 -3
Model (NA = 1 x 10 cm )
16 -3
MEDICI (NA = 6 x 10 cm )
0.6
Threshold Voltage (V)
0.5
0.4
0.3
VDS = 0.05 V tb = 400 nm
VSUB =0V tSi = 50 nm
0.2 φM1 = 4.77 V tf = 5 nm
φM2 = 4.1 V L1 = 0.1 µm
0.1
0.1 0.2 0.3 0.4 0.5 0.6
Channel Length (in µm)
Fig. 4.6: Threshold voltage variation with channel length for different body doping density.
0.6 17
MEDICI (NA = 1x 10 cm )
-3
0.4
0.3
0.2
VDS = 0.05 V tb = 400 nm
VSUB =0V tSi = 50 nm
0.1 φM1 = 4.77 V tf = 5 nm
φM2 = 4.1 V L1 = 0.05 µm
0
0.05 0.10 0.15 0.20 0.25 0.30 0.35
Channel Length (in µm)
Fig. 4.7: Vth variation with channel length for different body doping density with L1 = 50 nm.
57
4.3.5 Buried Oxide Thickness dependence
As the buried oxide is scaled the influence of source/drain on the channel region via
the buried oxide worsens the SCE in conventional SMG MOSFETs due to increased
coupling. Fig. 4.8 shows the short-channel effect suppression in a fully depleted DMG
SOI MOSFET for two different buried oxide thicknesses of 100 nm and 400 nm. As
shown in the figure for both buried oxide thicknesses, Vth rolls-up at shorter channel
lengths. This is in contrast to the threshold voltage behavior for a SMG SOI device
which rolls-off even for reduced buried oxide thickness at shorter channel length. Also,
reducing the buried oxide can lead to increased junction capacitance. Thus the DMG
structure lends another degree of flexibility in the design of deep submicron SOI
transistor design by offering the alternative of gate material engineering to subdue the
undesirable SCE. Fig. 4.9 confirms that this flexibility in design is valid for even 100 nm
0.5
0.4
0.3
Model (tb=100 nm)
MEDICI (tb=100 nm)
0.2 MEDICI (tb=400 nm)
0.1
0.1 0.2 0.3 0.4 0.5 0.6
Channel Length (in µm)
Fig. 4.8: Threshold voltage variation with channel length for different buried oxide thickness.
58
0.6
MEDICI (tb = 100 nm)
MEDICI (tb = 400 nm)
Model (tb = 100 nm)
Threshold Voltage (V) 0.5
0.4
0.3
0.2 tSi = 50 nm
VDS = 0.05 V
VSUB =0V tf = 5 nm
φM1 = 4.77 V L1 = 0.05 µm
0.1
φM2 = 4.1 V NA = 6 x 1016 cm-3
0
0.05 0.10 0.15 0.20 0.25 0.30 0.35
Channel Length (in µm)
Fig. 4.9: Threshold voltage variation as a function of channel length for buried oxide thicknesses
of 100 nm and 400 nm with L1 fixed at 50 nm.
The dual-material gate (DMG) structure offers the benefit of SCE suppression in a
SOI device by virtue of gate material engineering, i.e., engineering the length and
workfunction of the two gate metals. Fig. 4.10 shows the variation of threshold voltage
with workfunction difference at a fixed channel length of L = 0.5 µm for two L1/L2 ratios
as predicted by the analytical expression and the 2-D numerical simulations. As shown
in the figure, threshold voltage increases with increasing workfunction difference. For a
fixed workfunction difference, threshold voltage is higher for a higher L1/L2 ratio due to
the increased proportion of the channel region controlled by a higher wokfunction gate.
59
1.0 VDS = 0.05 V
0.9 φM2 = 4.1 V
L1/L2 = 2/3
L = 0.5 µm
4.4 Summary
MOSFET is formulated based on the 2-D physical model of surface potential developed
earlier. The effect of various device parameters like gate length scaling, body doping
density, the lengths of the gate metals and their work functions, substrate biasing, the
thickness of the buried oxide on the threshold voltage is studied. The results predicted by
the model are compared with 2-D simulations [9]. The results clearly demonstrate the
excellent immunity against SCE offered by the DMG structure with a Vth roll-up with
decreasing channel lengths visible down to 0.1 µm. Moreover the immunity against SCE
flexibility in deep submicron SOI design. The results provide incentive to further
investigate the potential benefits of a DMG SOI over a conventional SOI MOSFET for its
60
CHAPTER V
TWO-DIMENSIONAL SIMULATION STUDIES
5.1 Introduction
The peak of the electric field underneath the gate offers certain advantages, such as
increased lifetime of the device; minimization of the ability of the localized charges to
raise drain resistance [84]; and more control of gate over the conductance of the channel
so as to increase the gate transport efficiency. In a field effect transistor, the electric field
in the channel peaks near the drain. As a result, electrons enter into the channel with a
low initial velocity, gradually accelerating towards the drain. The maximum electron
drift velocity is reached near the drain. Another undesirable phenomenon is the hot-
carrier injection into the gate due to high drain side electric field.
channel potential profile and a more uniform electric field pattern along the channel. The
electric field distribution in the channel is modified such that the field near the source
becomes larger causing a more rapid acceleration of the electrons. Thus the average
performance by the DMG SOI MOSFET. Numerical simulation studies using MEDICI
[10] are employed to explore the unique features of a DMG SOI and compare with those
of a compatible single material gate (SMG) SOI MOSFET in terms of threshold voltage
leakage current, drive current, transconductance, drain conductance and voltage gain with
61
5.2 Computer Simulation Results
with respect to those of a compatible single material gate (SMG) SOI MOSFET. The
major target parameters for comparison are as follows. The linear threshold voltage
VDS = 0.05 V. The saturation threshold voltage (Vth,sat) is based on a modified constant-
current method at VDS = 1 V [85]. The saturation current (Ion) is the drain current at VDS =
VGS = 1 V. The leakage current (Ioff) is the drain current at VGS = 0 V and VDS = 1 V (or
VDS = 0.05 V, as stated). The transconductance, gm, is extracted from the slope of ID-VGS
at VGS = VDS = 1 V. The drain conductance (gd) is extracted from the slope of ID - VDS
between VDS = 0.75 V and 1.25 V at VGS = 1 V. Fully depleted dual-material gate
(DMG) and single-material gate (SMG) SOI NMOS device structures are created and
simulated by the two-dimensional (2-D) device simulator MEDICI [10] with the device
Table 5.1: Device parameters used for simulation of DMG and SMG SOI MOSFET’s.
Workfunction of M1 4.5 eV -
Workfunction of M2 4.1 eV -
62
5.2.1 Performance comparison with SMG SOI MOSFET
Output characteristics of the DMG and SMG SOI devices are compared for the
same channel length, L = 0.2 µm in Fig. 5.1. The workfunction of the gate metal for
SMG SOI is chosen as 4.1 eV. Choosing a body doping as NA = 6 x 1016 cm-3 for the
SMG SOI yields a threshold voltage, Vth = -0.059 V which is not suitable for performance
comparison. The body doping of SMG SOI device is thus chosen as NA = 3.591 x 1017
cm-3 which yields the same threshold voltage, Vth = 0.229 V for both the DMG and SMG
It is evident from Fig. 5.1 that the DMG SOI achieves a simultaneous reduction in
MOSFET. This leads to an increased voltage gain. This unique feature of the DMG SOI
1.0 L1 = 0.1 µm
L2 = 0.1 µm
φM1 = 4.5 V
0.8 φM2 = 4.1 V
ID (mA/µm)
VGS = 1.5 V
0.6
0.4
VGS = 1.0 V
0.2
DMG
VGS = 0.5 V SMG
0
0 0.4 0.8 1.2 1.6
VDS (Volts)
Fig. 5.1: Output characteristics compared for a DMG SOI with SMG SOI MOSFET.
63
80 VDS = 50 mV
L1 = 0.1 µm
L2 = 0.1 µm
60 φM1 = 4.5 V
φM2 = 4.1 V
ID (µA/µm)
40
20
DMG
SMG
0
0 0.25 0.5 0.75 1.0
VGS (Volts)
Fig. 5.2: Gate characteristics compared for a DMG SOI with SMG SOI MOSFET.
To probe the physical mechanisms responsible for the improved performance of the
DMG SOI MOSFET, surface electric field and electron velocity profiles across the
channel for the DMG and SMG SOI are shown in Fig. 5.3. In a DMG SOI, the electric-
field discontinuity at the interface of the two gate metals (one-half of the channel for gate
lengths, L1 and L2, chosen) causes the overall channel field to be increased at the source
side, resulting in larger average velocity for the electrons entering the channel from the
source. The potential step also forces the channel field to redistribute mostly at the drain
side as the drain bias is increased (from 0.75 to 1 V). This screening effect is responsible
for the observed reduction in DIBL and channel length modulation (CLM). Also shown
in Fig. 5.3 are the comparisons with SMG SOI device having body doping same as that of
the DMG SOI MOSFET. It is evident from the figure that the enhanced source-side
electric field leads to an increased electron velocity in the channel for a DMG SOI
device.
64
300 VGS = 0.8 V SMG (NA = 3.591 x 1017 cm-3)
150 VDS = 1 V
100
50 VDS = 0.75 V
0
0 0.05 0.1 0.15 0.2
Position along channel (µm)
Fig. 5.3(a): Electric field profile along the surface of the channel for DMG and SMG SOI
MOSFET's.
L1 = 0.1 µm
L2 = 0.1 µm
1.2x107 φM1 = 4.5 V VDS = 1.0 V
φM2 = 4.1 V
4x106
SMG (NA = 3.591 x 1017 cm-3)
SMG (NA = 6 x 1016 cm-3)
DMG (NA = 6 x 1016 cm-3)
0
0 0.05 0.1 0.15 0.2
Position along channel (µm)
Fig. 5.3(b): Electron velocity profile along the channel surface for DMG and SMG SOI
MOSFET's.
65
5.2.2 Scaling characteristics at a fixed high workfunction gate length, L1
Scaling characteristics are studied for different values of the metal M1 length L1,
with all other parameters taking their nominal values as summarized in Table 5.1. The
most significant improvement over the SMG SOI is the Vth roll-up for the DMG SOI
device as shown in Fig. 5.4. With the proper control over gate metal M1 length, L1,
threshold voltage will not be sensitive to the gate length, a desirable feature in deep-
submicron technology. The Vth roll-up is due to an increase in the portion of larger
workfunction gate M1, i.e., increase of L1/L2 ratio as L decreases (at fixed L1). The gate
M1 is the main control gate whereas M2 serves as the screen gate and with increasing
L1/L2 ratio as L decreases, Vth increases. The Vth roll-up also leads to a lower Ioff for the
0.25
-0.04
0.20
0.15 -0.05
0.10
DMG
SMG (φM = 4.1 V) -0.06
0.05 SMG (φM = 4.5 V)
0 -0.07
0.1 0.2 0.3 0.4 0.5 0.6
Channel Length (µm)
Fig. 5.4: Comparison of threshold voltage variation with channel for DMG and SMG SOI
MOSFET’s.
66
5.2.3 Effect of L1/L2 ratio at a fixed channel length, L
At a fixed channel length L = L1 + L2, the location of the potential step can be tuned
for different values of the L1/L2 ratio. This feature is investigated with L1 ranging from 0
(SMG) to 0.25 µm at a fixed L = 0.3 µm for the target parameters of Vth,lin, Vth,sat, VDIBL,
It is observed from Fig. 5.5 that as L1 increases (L1/L2 increases) threshold voltage
increases. This leads to a lowering of VDIBL and a consequent reduction in the influence
decreases although leakage current also decreases as shown in Fig. 5.6. This is mainly
0.25
60
0.2
0.15 40
0.1
Vth,lin
20
0.05 Vth,sat
DIBL
0 0
0 0.05 0.1 0.15 0.2 0.25 0.3
M1 gate length, L1 (µm)
Fig. 5.5: Variation of Vth,lin, Vth,sat and VDIBL with gate length L1 for a DMG SOI MOSFET at a
fixed channel length, L = 0.3µm.
67
10-4 0.5
L1+ L2 = 0.3 µm
Off-state Leakage current, Ioff (A/µm) 10-5
φM1 = 4.5 V
0.3
10-7
10-8
0.2
10-9
Ioff (VDS = 50mV) 0.1
10-10 Ioff (VDS = 1 V)
Ion (VDS = 1 V)
10-11 0
0 0.05 0.1 0.15 0.2 0.25 0.3
M1 gate length, L1 (in µm)
Fig. 5.6: Variation of Ioff and Ion with gate length L1 for a DMG SOI MOSFET at a fixed channel
length, L = 0.3µm. L1 = 0 corresponds to SMG SOI.
As shown in Fig. 5.7(a), it is seen that as L1 increases the drain conductance, gd,
continues to decrease. With a larger portion of the channel being “screened” by the gate
M1, the influence of drain bias upon the channel current reduces. Fig. 5.7(a) also shows
depleted DMG SOI MOSFET. It is observed that gm is higher for a DMG SOI as
SOI with a larger workfunction gate, consequently, gd increases and gm decreases as the
gate overdrive decreases due to elevated threshold voltage. Fig. 5.7(b) shows the
68
100 L1 + L2 = 0.3µm
520
VGS = 1.0 V
500
80
480
gm (in µS/µm)
gd (in µS/µm)
60
460
40
440
20
gm 420
gd
0 400
0 0.05 0.1 0.15 0.2 0.25 0.3
M1 gate length, L1 (in µm)
Fig. 5.7(a): Variation of gm and gd with gate length L1 for a DMG SOI MOSFET at a fixed
channel length, L = 0.3 µm. L1 = 0 corresponds to SMG SOI.
20 φM1 = 4.5 V
φM2 = 4.1 V
L1 + L2 = 0.3µm
16 VDS = VGS = 1.0 V
Voltage gain, gm/gd
12
0
0 0.05 0.1 0.15 0.2 0.25 0.3
M1 gate length, L1 (in µm)
Fig. 5.7(b): Variation of voltage gain, gm/gd, with gate length L1 for a DMG SOI MOSFET at a
fixed channel length, L = 0.3 µm. L1 = 0 corresponds to SMG SOI.
69
From Figs. 5.5-5.7 it is observed that the optimum ratio of gate metal lengths, L1
and L2, for both logic and analog circuits application is L1/L2 = 1. With L1/L2 = 1, we get
a reduced DIBL, lower off-state current, higher gm, reduced off-state current, Ioff and a
higher voltage gain, gm/gd, in comparison to a SMG SOI MOSFET. This conclusion is
based on the simulations done for a channel length, L = 0.3 µm DMG SOI MOSFET.
Figs. 5.8-5.10 plot the threshold voltage variation, on/off-current variation, gm and
gd variation and voltage gain variation versus the channel region under gate M1, L1, for a
DMG SOI device with channel length, L = 0.2 µm. The curves show behavior similar to
that observed for L = 0.3 µm. It is seen from Figs. 5.8-5.10 that a gate length ratio,
140
0.25
0.20
120
0.15
0.10
100
DIBL
0.05 Vth,lin
Vth,sat
0 80
0 0.05 0.1 0.15 0.2
M1 gate length, L1 (µm)
Fig. 5.8: Variation of Vth,lin, Vth,sat and VDIBL with gate length L1 for a DMG SOI MOSFET at a
fixed channel length, L = 0.2 µm.
70
10-4 0.5
L1+ L2 = 0.2 µm
10-6
0.3
10-7
0.2
10-8
10-10 0
0 0.05 0.1 0.15 0.2
M1 gate length, L1 (in µm)
Fig. 5.9: Variation of Ioff and Ion with gate length L1 for a DMG SOI MOSFET at a fixed channel
length, L = 0.2 µm. L1 = 0 corresponds to SMG SOI.
120 580
L1 + L2 = 0.2µm
VGS = 1.0 V
100
560
80
gm (in µS/µm)
gd (in µS/µm)
540
60
520
40
500
20 gd
gm
0 480
0 0.05 0.1 0.15 0.2
M1 gate length, L1 (in µm)
Fig. 5.10(a): Variation of gm and gd with gate length L1 for a DMG SOI MOSFET at a fixed
channel length, L = 0.2 µm. L1 = 0 corresponds to SMG SOI.
71
15
L1 + L2 = 0.2 µm
3 VDS = VGS = 1.0 V
0
0 0.05 0.1 0.15 0.2
M1 gate length, L1 (in µm)
Fig. 5.10(b): Variation of voltage gain, gm/gd, with gate length L1 for a DMG SOI MOSFET at a
fixed channel length, L = 0.2 µm. L1 = 0 corresponds to SMG SOI.
workfunction on the performance of the DMG SOI MOSFET is studied by varying its
values. The workfunction of metal M2 is kept fixed at 4.1 eV. The results are shown in
Figs. 5.11-5.14. Like the L1/L2 ratio dependence, threshold voltage increases with
increasing workfunction difference between the two gate materials. This is due to the
72
0.8 L1 = 0.15 µm
100
L2 = 0.15 µm
0.7 φM2 = 4.1 V
80
0.5 60
0.4
40
0.3
0.2
Vth,lin
20
0.1 Vth,sat
DIBL
0 0
0 0.2 0.4 0.6 0.8 1.0
Workfunction Difference, ∆W (eV)
Fig. 5.11: Variation of Vth,lin, Vth,sat and VDIBL with workfunction difference, ∆W for a DMG SOI
MOSFET at a fixed channel length, L = 0.3µm.
ultrasmall SOI MOSFET design. On-/off-state currents also exhibit behavior similar to
the L1/L2 ratio variation as shown in Fig. 5.12. As a result of increased Vth at increasing
∆W, Ioff as well as Ion decrease. Increased ∆W (i.e., larger potential step at the metal gate
interface) also favours gd reduction as shown in Fig. 5.13. Whereas, gm decreases after
∆W = 0.4 eV due to reduced overdrive voltage available at the elevated threshold voltage
for a fixed gate bias. Fig. 5.14 shows the voltage gain, gm/gd as function of workfunction
difference, ∆W. As shown in the figure, voltage gain increases with increasing
workfunction difference but this trade-offs with elevated Vth, reduced Ion and reduced gm
at higher ∆W. Thus a ∆W = 0.4 eV is most suitable for VLSI circuit applications.
73
10-5 0.4
L1 = 0.15 µm
L2 = 0.15 µm
10-9
0.2
10-10
10-11
0.1
10-12
Ioff (VDS = 50mV)
10-13 Ioff (VDS = 1 V)
Ion (VDS = 1 V)
10-14 0
0 0.2 0.4 0.6 0.8 1.0
Workfunction Difference, ∆W (eV)
Fig. 5.12: Variation of Ioff and Ion with workfunction difference, ∆W for a DMG SOI MOSFET at
a fixed channel length, L = 0.3µm.
80 L1 = 0.15 µm 500
L2 = 0.15 µm
φM2 = 4.1 V
480
60
gm (in µS/µm)
gd (in µS/µm)
460
40
440
20
420
gm
gd
0 400
0 0.2 0.4 0.6 0.8 1.0
Workfunction Difference, ∆W (eV)
Fig. 5.13: Variation of gm and gd with workfunction difference, ∆W for a DMG SOI MOSFET at
a fixed channel length, L = 0.3µm.
74
40
30
Voltage gain, gm/gd
20
L1 = 0.15 µm
10 L2 = 0.15 µm
φM2 = 4.1 V
VDS = VGS = 1.0 V
0
0 0.2 0.4 0.6 0.8 1.0
Workfunction Difference, ∆W (eV)
Fig. 5.14: Variation of voltage gain, gm/gd, with workfunction difference, ∆W for a DMG SOI
MOSFET at a fixed channel length, L = 0.3 µm.
The results thus obtained for a fully depleted DMG SOI MOSFET point out an
optimum metal gate length ratio, L1/L2 = 1 and a workfunction difference, ∆W = 0.4 eV.
5.3 Summary
The novel properties of fully depleted dual-material gate (DMG) SOI MOSFET
have been studied in the context of its potential integration in the current CMOS
technology. The unique features of the DMG which are not easily available in the
conventional SOI devices include: Vth “roll-up”, reduced DIBL and simultaneous
material engineering.
technology maybe its asymmetric structure, but Zhou [22] suggested two fabrication
75
procedures requiring only one additional mask step. Moreover, the proposed DMG SOI
may also be employed in symmetric structures (like a LDD spacer). With the CMOS
feature gate length should not preclude the possibility of realizing the potential benefits
and excellent immunity against SCE’s that the DMG SOI MOSFET promises.
76
CHAPTER VI
CONCLUSIONS
The conclusions derived from the present work are divided into three categories,
namely, (a) Surface Potential Model for a fully depleted (FD) dual-material gate (DMG)
SOI MOSFET, (b) Analytical expression for Threshold voltage, and (c) 2-D numerical
simulation studies.
Analytical model of surface potential along the channel in a FD DMG SOI MOS
1. The model predicts the creation of a step in the channel potential profile due to
neglected.
2. The shift in the surface channel potential minima position is negligible with
effects (SCE) like drain-induced barrier lowering (DIBL) and channel length
modulation (CLM).
3. The electric field in the channel at the drain end is lowered leading to reduced
hot-carrier effect.
4. The channel potential profile can be tuned by “gate-material engineering”, i.e., the
77
5. The model includes the effect of various MOS parameters like body doping
concentration, applied drain and substrate biases, the thickness of thin-film, gate
b) Threshold Voltage
1. Threshold voltage, Vth, rolls-up with decreasing channel length in a DMG SOI
down to 0.1 µm by carefully engineering the length and workfunction of the gate
materials.
3. The effect of various MOS parameters like body doping density, applied substrate
bias, the thickness of thin-film, gate oxide and buried oxide on the threshold
2-D MEDICI simulations were used to explore and compare the novel attributes
offered by the DMG structure with a conventional SMG SOI in terms of Vth variation
drive current, transconductance, drain conductance and voltage gain. The conclusions
are:
1. The unique features of the DMG are: Vth roll-up with decreasing channel length,
78
engineering.
found to be optimum for both logic and analog applications for a FD DMG SOI
MOSFET.
This problem has several possible extensions that could be attempted as ongoing
research work. Some specific recommendations based on the present work are as
follows:
1. The present study can be well extended to partially depleted DMG SOI
MOSFETs.
2. A lot of scope lies in studying the effect of DMG structure on devices employing
3. Experimental results can provide further confirmation of the efficacy of the DMG
79
APPENDIX A
81
COMMENT Symbolic Factorization, Solve, Regrid on Potential
SYMB CARRIERS=0
METHOD ICCG DAMPED
SOLVE
COMMENT Solve using Refined Grid save solution for later use
SYMB CARRIERS=0
SOLVE OUT.FILE=DMGSOI1S_20
COMMENT Plot the potential at top and bottom Si/SiO2 interface at zero bias
PLOT.1D POTENTIA CURVE COLOR=4 X.START=0.0 X.END=.7 Y.START=0.0
+ Y.END=0.0 TITLE="SURFACE POTENTIAL DISTRIBUTION"
82
APPENDIX B
COMMENT Drain Characteristics for a DMG SOI with channel length, L = 0.2 µm.
83
APPENDIX C
COMMENT Solve for VDS =0.05 V and then Ramp the Gate
SOLVE V(DRAIN)=0.05
SOLVE V(GATE1)=0 V(GATE2)=0 ELEC=(Gate1,Gate2) VSTEP=.05 NSTEP=25
COMMENT Extract MOS parameters like the linear threshold voltage, channel length, etc.
EXTRACT MOS.PARA IN.FILE=DMDSOI1GI_20 GATE=Gate1
84
APPENDIX D
COMMENT Extraction of Surface Electric Field, Mean Electron Velocity and Potential.
85
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LIST OF PUBLICATIONS
1. “Two-dimensional analytical modeling of Fully Depleted Dual-Material Gate
(DMG) SOI MOSFET and Evidence for Diminished Short-channel Effects,”
Accepted subject to appropriate revision in IEEE Transactions on Electron
Devices, 2003.
2. “Analysis of Short-Channel Effects in SOI MOSFETs for sub-100nm CMOS
Technology,” Accepted in the Proc. of the 12th International Workshop on Physics
of Semiconductor Devices, IWPSD-2003, December 16th – 20th.
3. “Exploring the Novel Characteristics of Fully Depleted Dual-Material Gate
(DMG) SOI MOSFET using Two-Dimensional Numerical Simulation Studies,”
Accepted in the Proc. of the 17th International Conference on VLSI Design,
January 5th – 9th, 2004.
4. “Investigation of the Novel Attributes of a Fully Depleted (FD) Dual-Material
Gate (DMG) SOI MOSFET,” Accepted subject to appropriate revision in IEEE
Transactions on Electron Devices, 2003.
5. “Controlling short-channel effects in deep submicron SOI MOSFETs for
improved reliability: A Review,” Revised manuscript under review with IEEE
Transactions on Device and Materials Reliability, 2003.
95