EE 105 Spring 1997

Lecture 25

Common-Drain Amplifier

I

Similar conguration to common collector.
Analysis: much the same as for CC amplier -- if

V

SB

isnt zero, then the voltage
gain is degraded from about 1 to 0.8-0.9
V
BIAS
+

V
+
R
L
i
SUP
R
S
v
s
v
OUT

+

V
BIAS
V
+
I
SUP
+

V
OUT

EE 105 Spring 1997
Lecture 25

Common-Drain Two-Port Model

I

Two-Port model:
If

V

SB

= 0, then the input resistance is

A

v

= 1 and

R

out

= 1 /

g

m

(for hand analysis)
The CD amplier is a reasonable voltage buffer, especially for large (

W

/

L

) -->
large

g

m

.
v
in
+

v
in
+

v
out
+

(g
m
+ g
mb
)
1
(g
m
+ g
mb
)
g
m

EE 105 Spring 1997
Lecture 25

Single-Stage Amplier Congurations

I

Two complemetary versions exist for each amplier type.

I

CS/CE, CG/CB, and CD/CC have similar topologies (and properties)
Amplier
Type
Transistor Type
Common
Source/
Common
Emitter
(CS/CE)
Common
Gate/
Common
Base
(CG/CB)
Common
Drain/
Common
Collector
(CD/CC)
NMOS
npn pnp
i
SUP
V
+
V

OUT
IN
PMOS
i
SUP
V
+
V
+
V

OUT
OUT OUT
IN
IN
IN
V

i
SUP
i
SUP
V

V
+
IN
i
SUP
V

V
+
IN
i
SUP
V

V
+
V
+
OUT
OUT
IN
V

i
SUP
V
+
OUT
OUT
IN
V

i
SUP
i
SUP
V
+
V

OUT
IN
i
SUP
V
+
V

OUT
IN
i
SUP
V
+
V

OUT
IN
i
SUP
V
+
V

OUT
IN

EE 105 Spring 1997
Lecture 25

Two-Port Parameters for
Single-Stage Ampliers

Note: appropriate two-port model is used, depending on controlled source

Amplier Type Controlled Source
Input Resistance

R

in

Output Resistance

R

out

Common
Emitter

G

m

=

g

m

r

r

o

||

r

oc


Common
Emitter +

R

E

G

m

=

g

m

/ (1+

g

m

R

E

)

r

( 1 +

g

m



R

E

)

r

oc

||



[(1 +

g

m

R

E

)

r

o

]
for

r

>>

R

E

,

R

S

Common
Source

G

m

=

g

m

innity

r

o

||

r

oc

Common
Base

A

i

= -1 1 /

g

m



r

oc

|| [(1 +

g

m

(

r

||

R

S

))

r

o

],
for

g

m

R

S

>> 1
Common
Gate

A

i

= -1
1 /

g

m

, (

v

sb

= 0)
-otherwise-
1 / (

g

m

+

g

mb

)

r

oc

||[(1 +

g

m

R

S

)

r

o

], (

v

sb

=0)
-otherwise-

r

oc

|| [(1+

(g

m

+ g

mb

)

R

S

)

r

o

]
both for

g

m

R

S
>> 1
Common
Collector
A
v
= 1 r

(r
o
|| r
oc
|| R
L
) (1 / g
m
) + R
S
/

Common
Drain
A
v
= 1 if v
sb
= 0,
-otherwise-
g
m
/ (g
m
+ g
mb
)
innity 1 / g
m
if v
sb
= 0,
-otherwise-
1 / (g
m
+ g
mb
)
EE 105 Spring 1997
Lecture 25
Ultra-Simplied Two-Port Parameters
I g
mb
= 0, common base has reasonable source resistance --> R
S
>> r

I this table is adequate for rst-cut hand design

Amplier Type Controlled Source Input Resistance R
i
Output Resistance R
o
Common
Emitter
G
m
= g
m
r

r
o
|| r
oc

Common
Source
G
m
= g
m
innity r
o
|| r
oc
Common
Base
A
i
= -1 1 / g
m
r
oc
|| (

r
o
)
Common
Gate
A
i
= -1 1 / g
m
r
oc
||[(1+g
m
R
S
) r
o
]
Common
Collector
A
v
= 1 r

+ (r
o
|| r
oc
|| R
L
) (1 / g
m
) + R
S
/
Common
Drain
A
v
= 1 innity 1 / g
m

EE 105 Spring 1997
Lecture 25
Multistage Ampliers
I Single-stage transistor ampliers are inadequate for meeting most design
requirements for any of the four amplier types (voltage, current,
transconductance, and transresistance.)
I Therefore, we use more than one amplifying stage. The challenge is to gain
insight into when to use which of the 12 single stages that are available in a
modern BiCMOS process:
Bipolar Junction Transistor: CE, CB, CC -- in npn and pnp
*
versions
MOSFET: CS, CG, CD -- in n-channel and p-channel versions
*
in many BiCMOS technologies, only the npn BJT is available
I How to design multi-stage ampliers that satisfy the required performance
goals?
* Two fundamental requirements:
1. Impedance matching:
output resistance of stage n, R
out, n
and input resistance of stage n + 1, R
in, (n+1)
,
must be in the proper ratio
R
in, (n+1)
/ R
out, n
--> or

R
in, (n+1)
/ R
out, n
--> 0
to avoid degrading the overall gain parameter for the amplier
2. DC coupling:
direct connection between stages --> interaction between biasing sources must
be considered (later)

EE 105 Spring 1997

Lecture 25
Cascaded Voltage Amplier
I Want R
in
--> infinity, R
out
--> 0, with high voltage gain.
Try CS as rst stage, followed by CS to get more gain ... use 2-port models
I solve for overall voltage gain ... higher, but R
out
= R
out2
which is too large
r
o1
r
oc1
r
o2
r
oc2 v
in1
v
s
g
m1
v
in1
g
m2
v
in2
R
L
R
S
CS CS
+
+

v
in2
+
v
out
+

EE 105 Spring 1997
Lecture 25
Three-Stage Voltage Amplier
I Fix output resistance problem by adding a common drain stage (voltage buffer)
I Output resistance is not that low ... few k for a typical MOSFET and bias -->
could pay an area penalty by making (W/L) very large to fix.
(r
o2
r
oc2
)
v
in
v
s
A
v
v
in
(g
m3
+ g
mb3
)
R
L
R
S
CS CS CD
+
+

v
in3
v
in3
+
v
out
+

+

1
EE 105 Spring 1997
Lecture 25
Transconductance Amplier
I input resistance should be high; output resistance should also be high
I initial idea: use CS stages (they are natural transconductance amps)
I Overall G
m
= - g
m1
(r
o1
|| r
oc1
) g
m2
= A
v1
g
m2
... can be very large
I Output resistance is only moderately large
r
o2
r
oc2 v
in1
v
s
g
m1
(r
o1
r
oc1
)g
m2
v
in1
R
L
R
S
i
out
+
+

EE 105 Spring 1997

Lecture 25
Improved Transconductance Amplier
I Output resistance: boost using CB or CG stage
I high-resistance current sources are needed to avoid having r
oc3
limit the
resistance
(r
o2
r
oc2
)
v
in
v
s
A
v1
g
m2
v
in
R
L
R
S
i
out
+
+

i
in3
g
m3
1
i
in3
CS CS CG
g
m3
r
o3
(r
o2
r
oc2
)

r
oc3
EE 105 Spring 1997
Lecture 25
Two-Stage Current Buffers
I since one CB stage boosted the output resistance substantially, why not add
another one ...
I The base-emitter resistance of the 2
nd
stage BJT is r
2
which is much less than
the 2
nd
stage source resistance = 1
st
stage output resistance
I Therefore, the output resistance expression reduces to
... no improvement over a single CB stage
i
s
R
L
R
S
i
out
i
in1
i
in2
i
in2
i
in1
[ g
m2
r
o2
(r
2

o1
r
o1
r
oc1
)]

r
oc2
CB CB

o1
r
o1
r
oc1
g
m1
1
g
m2
1
R
S2
R
out1

o1
r
o1
r
oc1
= =
R
out
g
m2
r
o2
r
2
r
oc2

o2
r
o2
r
oc2
=
EE 105 Spring 1997
Lecture 25
Improved Current Buffer: CB/CG
I The addition of a common-gate stage results in further increases in the output
resistance, making the current buffer closer to an ideal current source at the
output port
I The product of transconductance and output resistance g
m2
r
o2
can be on the
order of 500 - 900 for a MOSFET --> R
out
is increased by over two orders of
magnitude
Of course, the current supply for the CG stage has to have at least the same order
of output resistance in order for it not to limit the overall R
out
.
Practical limit ... on the order of 100 M
i
s
R
L
R
S
i
out
i
in1
i
in2
i
in2
i
in1
[g
m2
r
o2
(
o1
r
o1
r
oc1
)]

r
oc2
CB CG

o1
r
o1
r
oc1
g
m1
1
g
m2
1