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inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
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Agilent EEsof EDA
Presentation on ADS Momentum
Keefe Bohannan
Agilent EEsof Applications Engineer
April 2003
ADS Momentum
A Half-Day Seminar
Momentum Seminar
momentum_01_01 Page 2
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1]
Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
Momentum Seminar
momentum_01_01 Page 3
What is meant by Planar EM simulation ?
Substrate - multiple dielectrics
Metals - traces on different layers forming component and/or thin film
interconnect
Vias - connecting different layers
Method of Moments technique
Sometimes referred to as 2.5D
It does NOT include:
Arbitrary 3D structures
Horn Antennas
Momentum Seminar
momentum_01_01 Page 4
Why are Planar EM Simulators used ?
No simple analytical model exists
Coupling between conductors or layers is significant
Arbitrary planar geometry
Narrow frequency response not captured by analytical models
Radiation patterns of planar antennas
CPW transmission lines
When full 3D analysis would take too long
Momentum Seminar
momentum_01_01 Page 5
How are Planar EM Simulators used ?
Layout driven
Created entirely within layout,
Schematic-to-Layout translation, OR
Import (DXF, GDSII, etc.)
Momentum interface within ADS Layout
Mode > Substrate/Metallization > Port > Mesh >
Simulation > Component > Optimization
Outputs
S-parameters
Current visualization
Momentum Seminar
momentum_01_01 Page 6
Creating/importing artwork in Layout
Created entirely within layout
Schematic-to-Layout translation
Import (DXF, GDSII, etc.)
Momentum Seminar
momentum_01_01 Page 7
Created entirely within layout
Schematic-to-Layout translation
Import (DXF, GDSII, etc.)
Everything is placed on a layer
There are 39 default layers
User may add new layers, remove existing layers, or
modify layer names and properties
User may define name, color, pattern, shape display
(outlined/filled), and line style associated with layers
Layers may be set to be visible/invisible,
selectable/unselectable, and insertable/uninsertable
Items on unselected layers may not be selected /
edited / moved / deleted
Only one layer is insertable at a time
Objects can only be created, copied, or moved
TO the insertable (they can be copied or
moved FROM any selectable layer)
Creating/importing artwork in Layout
Momentum Seminar
momentum_01_01 Page 8
Created entirely within layout
Schematic-to-Layout translation
Import (DXF, GDSII, etc.)
Preferences which apply to things not yet placed:
Trace, Placement, Entry/Edit, Units/Scale,
Component Text, Text
Preferences which apply to things already placed:
Select, Grid/Snap, Pin/Tee, Display, Layout
units
Preferences for schematic and layout window are set
separately
Preferences Setting are saved to file in project
layout.prf and schematic.prf
Preferences files from other projects may be read in
Options > Preferences Read... button
Creating/importing artwork in Layout
Momentum Seminar
momentum_01_01 Page 9
Created entirely within layout
Schematic-to-Layout translation
Import (DXF, GDSII, etc.)
Creating/importing artwork in Layout
Momentum Seminar
momentum_01_01 Page 10
Created entirely within layout
Schematic-to-Layout translation
Import (DXF, GDSII, etc.)
Creating/importing artwork in Layout
Momentum Seminar
momentum_01_01 Page 11
Created entirely within layout
Schematic-to-Layout translation
Import (DXF, GDSII, etc.)
Creating/importing artwork in Layout
Momentum Seminar
momentum_01_01 Page 12
Created entirely within layout
Schematic-to-Layout translation
Import (DXF, GDSII, etc.)
Creating/importing artwork in Layout
Momentum Seminar
momentum_01_01 Page 13
Created entirely within layout
Schematic-to-Layout translation
Import (DXF, GDSII, etc.)
Creating/importing artwork in Layout
Simplify hierarchical designs by
using Generating Artwork
(flattens hierarchy, but retains
multi-layer layout)
Momentum Seminar
momentum_01_01 Page 14
How are Planar EM Simulators used ?
Layout driven
Created entirely within layout,
Schematic-to-Layout translation, OR
Import (DXF, GDSII, etc.)
Momentum interface within ADS Layout
Mode > Substrate/Metallization > Port > Mesh >
Simulation > Component > Optimization
Outputs
S-parameters
Current visualization
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Printed in USA, May 19, 2003
5989-9596EN
This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:
www.agilent.com/nd/eesof
Agilent EEsof EDA
Detailed Presentation on Momentum- Part 1 of 3
Momentum Seminar
momentum_01_02 Page 1
Using Momentum
Enable regular Momentum or Momentum RF
Define Substrate and Metallization (pre-compute option)
Modify the type and impedance of ports
Describe a possible Substrate enclosure
Create/modify Momentum Component to be used in EM/circuit co-simulation
or co-optimization
Define Mesh parameters (pre-compute option)
Setup and Perform a Momentum simulation (planar solve)
Setup and Perform a Momentum optimization (geometric perturbation based)
Display Visualization (S-parameters, current density, transmission line
parameters) and Radiation patterns
Export 3D files for HFSS
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results
Momentum Seminar
momentum_01_02 Page 2
Using Momentum: Selecting the Analysis Mode
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results
Click this submenu to toggle the analysis mode
Momentum MomentumRF
MomentumRF Momentum
Momentum Seminar
momentum_01_02 Page 3
Momentum versus MomentumRF: A Snapshot
Momentum features:
Full-Wave EM Simulation
Rooftop Basis Function
Rectangular and Triangular Cells
For most passive geometry
Full accuracy for all circuit sizes
No inherent upper frequency limit
Potential instability at f <kHz to MHz
Port Calibration
Box and Waveguide inclusion
Includes all radiation modes
Display 2D and 3D Radiation Patterns
Momentum RF features:
Quasi-Static EM Simulation
Star/Loop Basis Functions
Polygonal cells
Best for geometrically complex designs
For electrically small designs ( /2)
Upper frequency depends on size
Results stable down to DC
Port Calibration
No Box / Waveguide Modes
For designs that dont radiate
No Radiation Patterns
Great for 1
st
pass results, even for large designs (> /2)
Simulation time and memory decrease by ~10X-25X
Momentum Seminar
momentum_01_02 Page 4
Status window provides rule of thumb frequency
for which the structure is electrically small
How do I know?
Momentum versus MomentumRF
Electrically Small condition for Momentum RF
D /2
Momentum Seminar
momentum_01_02 Page 5
Momentum versus MomentumRF
Planar EM Simulation Basics
Physical Design
Substrate
Metallization
Ports
Method of Moments
Meshing
Rooftop functions
B
1
(r)
B
2
(r)
B
3
(r)
I
1
I
2
I
3
/10
J(r) = I
1
B
1
(r) + I
2
B
2
(r) + I
3
B
3
(r)
Heywhere did
this equation
come from?
Momentum Seminar
momentum_01_02 Page 6
If one then transforms these equations to the integral form, the mixed potential integral equation in very general
form as a linear integral operator equation follows:

Here, J(r) represents the unknown surface currents and E(r) the known excitation of the problem. The Green's dyadic of the
layered medium acts as the integral kernel. The unknown surface currents are discretized by meshing the planar
metallization patterns and applying an expansion in a finite number of subsectional basis functions B
1
(r), ..., B
N
(r):

Maxwells Equations
E = -B/t Faradays Law
H = J + D/t Amperes Law
D = Gausss Law
B = 0 No Name (Gausss Law for Magnetism)
where
E = Electric Field Intensity Vector
H = Magnetic Field Intensity Vector
D = Electric Flux Density (Electric Displacement Vector)
B = Magnetic Flux Density Vector
James C. Maxwell
Ohhhhsorry I
asked.
Momentum Seminar
momentum_01_02 Page 7
Momentum versus MomentumRF
Planar EM Simulation Basics
B
1
(r) B
2
(r)
B
3
(r)
I
1
I
2
I
3
I
1
I
2
I
3
C
11
C
22
C
12
L
11
L
23
L
22
L
13
L
12
L
33 R
22
/10
Method of Moments
Maxwells Equations
Matrix Equation
Equivalent Circuit
[Z].[I]=[V]
[Z] = [R] + j[L] + 1/j [C]
-1
Momentum Seminar
momentum_01_02 Page 8
Momentum versus MomentumRF
Fullwave versus Quasi-Static: Fullwave
Fullwave electric & magnetic Greens functions
Includes space and surface radiation
[L(w)] & [C(w)] are complex and frequency dependent
[Z(w)] matrix reload CPU intensive
jkR
R
e

1
Fullwave EM
Maxwells Equations
Matrix Equation
Equivalent Circuit
[Z].[I]=[V]
[Z] = [R] + j[L()] + 1/j [C()]
-1
[S]
Momentum Seminar
momentum_01_02 Page 9
Momentum versus MomentumRF
Fullwave versus Quasi-Static: Quasi-Static
Electro- and magneto-static Greens functions
Near field / low freq approximation
L(w) = L
0
+ L
1
wR + L
2
(wR)
2
+
C(w) = C
0
+ C
1
wR + C
2
(wR)
2
+
Neglects far field radiation
[L
0
] & [C
0
] are real and frequency independent
[Z
0
] matrix reload very fast
( ) ... 1
1 1
+

jkR e
R
jkR
R
Quasi-Static EM
Maxwells Equations
Matrix Equation
Equivalent Circuit
[Z
o
].[I]=[V]
[Z
o
] = [R] + j[L
o
] + 1/j [C
o
]
-1
[S]
Momentum Seminar
momentum_01_02 Page 10
Momentum versus MomentumRF
A Summary of Effects Included
quasi-static inductance . . . . . .
quasi-static capacitance . . . . .
DC conductor loss (s) . . . . . . . .
DC substrate loss (s) . . . . . . . .
dielectric loss (tan d) . . . . . . . . . . . . . . . . . . . . . . . . . . .
skin effect loss . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
substrate wave radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
space wave radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Layout
S parameters
RF
Spice model S parameters
MW
Spice Momentum RF Momentum MW
DC
Momentum Seminar
momentum_01_02 Page 11
Using Momentum: Creating Substrate Stack-ups and
Mapping Layout Layers as Metallization Layers
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results
Momentum Seminar
momentum_01_02 Page 12
Using Momentum: Creating Substrate Stack-ups and
Mapping Layout Layers as Metallization Layers
Once you have created or imported your artwork
Momentum Seminar
momentum_01_02 Page 13
Using Momentum: Creating Substrate Stack-ups and
Mapping Layout Layers as Metallization Layers
be sure to define (or open) your substrate stack-up and map the metallization layers
Momentum Seminar
momentum_01_02 Page 14
Using Momentum: Creating Substrate Stack-ups and
Mapping Layout Layers as Metallization Layers
Greens Function Substrate Calculation Time
Students Guide A-36
Momentum Seminar
momentum_01_02 Page 15
Using Momentum: Creating Substrate Stack-ups and
Mapping Layout Layers as Metallization Layers
A note on layout layer conductivity
Conductivity defined as:
Perfect Conductor (lossless)
(Real, Imaginary)
(Real, thickness)
Impedance (Real, Imaginary)
The parameters selected are applied
toward a conductor loss algorithm, this
does NOT affect the layout thickness
Momentum Seminar
momentum_01_02 Page 16
Momentum treats all conductors as having zero thickness. However, the conductivity and thickness can be specified to approximate
frequency dependent losses in the metallization patterns.
Momentum uses a complex surface impedance for all metals that is a function of conductor thickness, conductivity, and frequency.
At low frequencies, current flow will be approximately uniformly distributed across the thickness of the metal. Momentum uses
this minimum resistance and an appropriate internal inductance to form the complex surface impedance.
At high frequencies, the current flow is dominantly on the outside of the conductor and Momentum uses a complex surface
impedance that closely approximates this skin effect.
At intermediate frequencies, where metal thickness is between approximately two and ten skin depths, the surface impedance
transitions between those two limiting behaviors.
This surface impedanceis added to the Method of Moments approach that is used forMomentum in general.
The formula used is a combination of a high-frequency conductivity and a low-frequency bulk resistivity. The formula is such that both
approaches (LF bulk behavior HF surface impedance) transition seamlessly.
The formula is:
Z = coth() * Zc
where Zc = the HF impedance and coth() is the correction for finite thickness
Zc = 0.5 * sqrt(j *
0
* /( + j *
0
* ))
= 0.5 * thickness * sqrt(j *
0
* * ( + j *
0
* ))
where = 2 * * f
and = conductivity = 1/resistivity [in Siemens/meter]
The meshing density can affect the simulated behavior of a structure. A more dense mesh allows current flow to be better represented
and can slightly increase the loss. This is because a more uniform distribution of current for a low density mesh corresponds to a lower
resistance
Using Momentum: Creating Substrate Stack-ups and Mapping
Layout Layers as Metallization Layers:
Loss Model used in Strip Conductors
We will examine a
thick conductor
method later in this
seminar
Momentum Seminar
momentum_01_02 Page 17
Using Momentum
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results
Momentum Seminar
momentum_01_02 Page 18
Placing and Defining Ports
Considerations
Keep the following points in mind when adding ports to circuits to be simulated using Momentum:
The components or shapes that ports are connected to must be on layout layers that are mapped to
metallization layers that are defined as strips or slots. Ports cannot be directly connected to vias.
Make sure that ports on edges are positioned so that the arrow is outside of the object, pointing
inwards, and at a straight angle.
Make sure that the port and the object you are connecting it to are on the same layout layer. For
convenience, you can set the entry layer to this layer; the Entry Layer listbox is on the Layout tool
bar.
A port must be applied to an object. If a port is applied in open space so that is not connected to an
object, Momentum will automatically snap the port to the edge of the closest object. This will not be
apparent from the layout, however, because the position of the port will not change.
If the Layout resolution is changed after adding ports that are snapped to edges, you must delete
the ports and add them again. The resolution change makes it unclear to which edges the ports are
snapped, causing errors in mesh calculations.
Note Do not use the ground port component (Component > Ground) in circuits that will be
simulated using Momentum. Either add ground planes to the substrate or use the ground reference
ports.
(Ground port component toolbar button: )
Momentum Seminar
momentum_01_02 Page 19
Port Type
Single
(default)
Internal
Differential
Coplanar
Common Mode
Ground Ref.
General Description
Calibrated to remove mismatch at port
boundary (might also call this a
transmission line port)
Not calibrated (might also call this a
direct excitation port)
Two ports with opposite polarity
Two ports with opposite polarity
Two ports with the same polarity
An explicit ground reference for a
Single or Internal port.
Placement
Edge
Edge or
Surface
Edge
Edge
Edge
Edge or
Surface
Type of layer
Strip or
Slot
Strip
Strip
Slots
Strip
Strip
CPW NOTE: For finite ground planes, use Ground Reference ports and Internal port on center conductor.
Placing and Defining Ports
Description of Momentum Port Types
Momentum Seminar
momentum_01_02 Page 20
It is connected to an object that is on either a strip or slot metallization layer.
It can be applied only to the edge of an object.
The port is external and calibrated. The port is excited using a calibration process that
removes any undesired reactive effects of the port excitations (mode mismatch) at the port
boundary. This is performed by extending the port boundary with a half-wavelength
calibration (transmission) line. The frequency wavelength selected during the mesh or
simulation process is used to calculate the length of the calibration line. For more information
about the calibration process, refer to "Calibration and De-embedding of the S-parameters"
on page A-7 in the Momentum manual.
The port boundary can be moved into or away from the geometry by specifying a reference
offset. S-parameters will be calculated as if the port were at this position.
When two or more single ports are on the same reference plane, coupling effects caused by
parasitics affects the S-parameters. The calibration process groups the ports so that any
coupling in the calibration arms is included in the S-parameter solution.
If the port is connected to an object on a strip layer, the substrate definition must include at
least one infinite metal layer: a top cover, ground plane, or a slot layer, or a ground
reference must be used in addition to the port.
If the port is connected to an object that is on a slot layer, the port has polarity.
Tip It is not necessary to open the Port Editor dialog box to assign this port type. Any port
without a port type specified is assumed to be a single port.
Placing and Defining Ports
Single Port Properties
Momentum Seminar
momentum_01_02 Page 21
Placing and Defining Ports
Defining a Single Port
Choose Momentum > Port Editor.
Select the port that you want to assign this type to.
In the Port Editor dialog box, under Port Type, select Single.
Enter the components of the port impedance in the Real and Imaginary fields,
and specify the units.
You can shift the port boundary, also referred to as the port reference plane.
Shifting the boundary enables a type of de-embedding process that effectively
adds or subtracts electrical length from the circuit, based on the characteristic
impedance and propagation characteristic of the port. Enter the offset in the
Reference Offset field, and select the units. A positive value moves the port
boundary into the circuit, a negative value moves the port boundary away from
the circuit.
Click Apply to add the definition to the port.
Momentum Seminar
momentum_01_02 Page 22
Placing and Defining Ports
Single Port: Avoiding Overlap (of calibration arm)
Be aware that when using single ports, the calibration arm applied to a port may be
long enough to overlap another element in the circuit. In this case, the port will be
changed to an internal port type, and no calibration will be performed on it. If this
occurs, a message will be displayed during simulation in the Status window indicating
the change.
Momentum Seminar
momentum_01_02 Page 23
Placing and Defining Ports
Single Port: Applying Reference Offsets
Reference offsets enable you to reposition single port types in a layout and thereby adjust electrical lengths in a layout, without
changing the actual drawing. S-parameters are returned as if the ports were placed at the position of the reference offset.
Why Use Reference Offsets?
The need to adjust the position of ports in a layout is analogous to the need to eliminate the effect of probes when measuring
hardware prototypes. When hardware prototypes are measured, probes are connected to the input and output leads of the Device
Under Test (DUT). These probes feed energy to the DUT, and measure the response of the circuit. Unfortunately, the measured
response characterizes the entire setup, that is, the DUT plus the probes. This is an unwanted effect. The final measurements should
reflect the characteristics of the DUT alone. The characteristics of the probes are well known, so measurement labs can
mathematically eliminate the effects of the probes, and present the correct measurements of the DUT.
There are significant resemblances between this hardware measurement process and the way Momentum operates. In the case of
Momentum, the probes are replaced by ports, which, during simulation, will feed energy to the circuit and measure its response. The
Momentum port feeding scheme also has its own, unwanted effect: low-order mode mismatch at the port's boundary, although this is
eliminated by the calibration process. However, in order for this calibration process to work well, it is necessary that the fundamental
mode is characterized accurately. This can only be accomplished when the distance between the port boundary and the first
discontinuity is sufficiently large, that is, there exists a feedline that is long enough to provide this distance.
Momentum Seminar
momentum_01_02 Page 24
Placing and Defining Ports
Single Port: Allowing for Coupling Effects
If you have two or more single ports that lie on the same reference plane, the calibration process will
take into account the coupling caused by parasitics that naturally occurs between these ports. This
yields simulation results that more accurately reflect the behavior of an actual circuit.
The figure below helps illustrate which ports will be grouped in order for the calibration process to
account for coupling among the ports. In this setup, only the first two ports will be grouped, since the
third port is an internal port type and the fourth port is on a different reference plane. Note that even
though the second port has a reference offset assigned to it, for this process they are considered to be
on the same plane and their reference offsets will be made equal.
If you do not want the ports to be grouped, you must add a small thickness of metal to the edge of the
object that one of the ports is connected to. The ports will no longer be on the same plane, and will not
be considered part of the same group.
Momentum Seminar
momentum_01_02 Page 25
Placing and Defining Ports
Internal Port Properties
Internal ports enable you to apply a port to the surface of an object in your design. By using internal
ports, all of the physical connections in a circuit can be represented, so your simulation can take into
account all of the EM coupling effects that will occur among ports in the circuit. These coupling effects
caused by parasitics are included in your simulation results because internal ports are not calibrated.
You should avoid geometries that allow coupling between single and internal ports to prevent incorrect S-
parameters.
An example of where an internal port is useful is to simulate a bond wire on the surface on an object.
Another example of where an internal port is necessary is a circuit that consists of transmission lines that
connect to a device, such as a transistor or a chip capacitor, but this device is not part of the circuit that
you are simulating. An internal port can be placed at the connection point, so even though the device is
not part of the circuit you are simulating, the coupling effects that occur among the ports and around the
device will be included in your simulation.
Internal ports are often used in conjunction with ground references.
Momentum Seminar
momentum_01_02 Page 26
Placing and Defining Ports
Internal Port Properties
It can be applied to the interior of a circuit by applying it to the surface of an object.
It can be applied to the edge of an object.
It can be applied to objects that are on strip layers only.
The orientation of the port is not considered if it is on the surface of an object. (For a
description of port orientation, refer to "Adding a Port to a Layout" on page B-5 in
the Momentum manual.)
No calibration is performed on the port. Because no calibration is performed on the
port, the results will not be as accurate as with a single port. However, the
difference in accuracy is small.
Choose Momentum > Port Editor.
Select the port that you want to assign this type to.
Click Apply.
Defining an Internal Port
Momentum Seminar
momentum_01_02 Page 27
Placing and Defining Ports
Illustration of Internal Port Excitation: Direct Point Feed
direct excitation point feed
Momentum Seminar
momentum_01_02 Page 28
direct excitation
line feed
Placing and Defining Ports
Illustration of Internal Port Excitation: Direct Line/Edge Feed
Momentum Seminar
momentum_01_02 Page 29
Placing and Defining Ports
Differential Port Properties
Differential ports should be used in situations where an electric field is likely to build up
between two ports (odd modes propagate). This can occur when:
The two ports are close together
There is no ground plane in the circuit or the ground plane is relatively far away
One port behaves (to a degree) like a ground to the other port, and polarity between the
ports is developed.
The ports are connected to objects that are on strip metallization layers.
The electric field that builds up between the two ports will have an effect on the circuit
that should be taken into account during a simulation. To do this, use differential ports.
Differential ports have the following properties:
They can be applied to objects on strip layers only.
They are assigned in pairs, and each pair is assigned a single port number.
Each of the two ports is excited with the same absolute potential, but with the opposite
polarity. The voltages are opposite (180 degrees out of phase). The currents are equal but
opposite in direction when the ports are on two symmetrical lines, and the current
direction is approximated for other configurations.
The two ports must be on the same reference plane.
Momentum Seminar
momentum_01_02 Page 30
Placing and Defining Ports
Differential Port Numbering
Note: Port numbers for differential ports are treated in the following manner: on the layout, you will continue
to see the port numbers (instance names) that were assigned to each port when they were added to the
layout. Use the Momentum Port Editor dialog box to identify which pair of ports will be treated as a differential
port.
When Momentum simulates designs containing non-consecutive port numbers, the ports are remapped to
consecutive numbers in the resulting data file. The lowest port number is remapped to 1, and remaining
numbers are remapped in consecutive order. The port numbers are not changed in the design itself. A
message in the Status window announces the change, and lists the mappings.
For example, if you are simulating a design with ports numbered 1 and 3, the following status message
informs you of the changes:
Layout has non-consecutive port numbers.
Output files will have consecutive port numbers.
layout port -> output port
1 -> 1
3 -> 2
Also, when you view results, you will see S-parameters for the differential port numbers. In the example
above, the layout would show p1, p2, p3, p4. The S-parameter results will be for combinations of the original
P1 and P3 only.
Momentum Seminar
momentum_01_02 Page 31
Placing and Defining Ports
Defining a Differential Port
Choose Momentum > Port Editor.
Select the port that you want to assign this type
to. Note the port number.
In the Port Editor dialog box, under Port Type,
select Differential.
Under Polarity, make sure that Normal is
selected.
Click Apply.
Select the second port.
In the Port Editor dialog box, under Port Type,
select Differential.
Under Polarity, select Reversed.
Under Associate with port number, enter the
number of the previously-selected port.
Click Apply.
Repeat these steps for other differential port pairs
in the circuit.
Click OK to dismiss the dialog box.
Momentum Seminar
momentum_01_02 Page 32
direct excitationn
line feed
line feed
ground reference
1.i
-1.i
Students Guide A-32
Placing and Defining Ports
Illustration of Differential Port Excitation: Direct Point Feed
Momentum Seminar
momentum_01_02 Page 33
Placing and Defining Ports
Coplanar Port Properties
This type of port is used specifically for coplanar waveguide (CPW) circuits. It is similar
to a differential port, but coplanar ports are applied to objects on slot layers (that is,
where slots are used in the design). Coplanar ports should be used in situations where
an electric field is likely to build up between two ports. This can occur when:
The two ports are close together
Polarity between the ports develops
The ports are connected to objects that are on slot metallization layers
The electric field that builds up between the two ports will have an effect on the
circuit that should be taken into account during a simulation. To do this, use
coplanar ports.
Coplanar ports have the following properties:
They can be applied to objects on slot layers only.
They are assigned in pairs.
Each of the two ports is excited with the same absolute potential, but with the
opposite polarity. The voltages are opposite (180 degrees out of phase). The
currents are equal but opposite in direction when the ports are on two symmetrical
lines, and the current direction is approximated for other configurations.
The two ports must be on the same reference plane.
Momentum Seminar
momentum_01_02 Page 34
Placing and Defining Ports
Coplanar Port Polarity
Note: Port numbers for CPW ports
are treated similar to the manner in
which differential ports are treated.
Be careful when assigning polarity to coplanar ports.
An incorrect choice of polarity can change the phase of
transmission type S-parameters by 180 degrees.
To verify polarity, zoom in on a coplanar port. You will
notice two sets of arrows applied to the port. One
appears when you add the port component to the
circuit. The second will appear after the mesh is
computed. It indicates the direction of the voltage over
the slot.
Momentum Seminar
momentum_01_02 Page 35
Placing and Defining Ports
Defining a Coplanar Port
Note Coplanar ports can be applied to objects on slot layers only.
Choose Momentum > Port Editor.
Select the port that you want to assign this type to. Note the port
number.
In the Port Editor dialog box, under Port Type, select Coplanar.
Under Polarity, make sure that Normal is selected.
Click Apply.
Select the second port.
In the Port Editor dialog box, under Port Type, select Coplanar.
Under Polarity, select Reversed.
Under Associate with port number, enter the number of the
previously-selected port.
Click Apply.
Repeat these steps for other differential port pairs in the circuit.
Click OK to dismiss the dialog box.
Momentum Seminar
momentum_01_02 Page 36
Placing and Defining Ports
Coplanar Port Example: examples/Momentum/Microwave/CPW_bend_prj
Momentum Seminar
momentum_01_02 Page 37
Placing and Defining Ports
Coplanar Port Example: examples/Momentum/Microwave/CPW_bend_prj
Momentum Seminar
momentum_01_02 Page 38
Placing and Defining Ports
Coplanar Port Example
Note: Visualization
displays the magnetic
currents (not the
electrical currents) for
slot metallizations.
Therefore, slots are
visualized and not metal.
Momentum Seminar
momentum_01_02 Page 39
Placing and Defining Ports
Common Mode Port Properties
Use common mode ports in designs where the polarity of fields is the same among two
or more ports (even modes propagate). The associated ports are excited with the same
absolute potential and are given the same port number.
Common mode ports have the following properties:
They can be applied to objects on strip layers only
A ground plane or other infinite metal (such as a cover) is required as part of the
design
Two or more ports can be associated
Associated ports are excited with the same absolute potential (and same polarity)
The ports must be on the same reference plane
Note Port numbers for common ports are treated in the following
manner: on the layout, you will continue to see the port numbers
(instance names) that were assigned to each port when they were
added to the layout. Use the Momentum Port Editor dialog box to
identify which group of ports will be treated as a common port.
Also, when you view results, you will see S-parameters for the common
port numbers. In the example above, the layout would show p1, p2, p3.
The S-parameter results will be for combinations of P1 only.
Note: Can also be utilized for
thick conductor simulations
(more on this later)
Momentum Seminar
momentum_01_02 Page 40
Placing and Defining Ports
Defining a Common Mode Port
Choose Momentum > Port Editor.
Select the port that you want to assign this type to. Note the port
number.
In the Port Editor dialog box, under Port Type, select Common
Mode.
Click Apply.
Select the second port.
In the Port Editor dialog box, under Port Type, select Common
Mode.
Under Associate with port number, enter the number of the port
that you selected first. Make sure that the value in the Associate
with port number field is the same for additional ports. For
example, if you were associating three ports and the first port was
assigned as port 1, for the second and third port, the value
entered into the Associate with port number field would be 1. (For
the first port you choose, no value is entered in this field.)
Click Apply.
Repeat these steps for other common mode ports in the circuit.
Click OK to dismiss the dialog box.
Momentum Seminar
momentum_01_02 Page 41
Placing and Defining Ports
Ground Reference Port
Ground references enable you to add explicit ground references to a circuit, which may
be necessary if implicit grounds are in your design.
Implicit ground is the potential at infinity, and it is made available to the circuit through
the closest infinite metal layer of the substrate. Implicit grounds are used with internal
ports and with single ports that are connected to objects on strip metallization layers.
There are instances where the distance between a port and its implicit ground is too
large electrically, or there are no infinite metal layers defined in the substrate. In these
cases, you need to add explicit ground references to ensure accurate simulation results.
For more information on using ground references, refer to "Simulating with Internal
Ports and Ground References" on page A-10 in the Momentum manual.
You can apply ground references to the surfaces of object. The object must be on strip
metallization layers.
Note: Multiple ground reference ports can be associated with the same port. To be
associated with a single port, the ground reference port should be a port attached to an
edge of an object in the same reference plane as the single port.
Momentum Seminar
momentum_01_02 Page 42
Placing and Defining Ports
Defining a Ground Reference Port
Choose Momentum > Port Editor.
Select the port that you want to assign as the ground reference.
In the Port Editor dialog box, under Port Type, select Ground Reference.
Under Associate with port number, enter the number of the single or
internal port that you want to associate with this ground reference. Make
sure that the distance between the port and ground reference is electrically
small.
Click Apply.
Momentum Seminar
momentum_01_02 Page 43
Placing and Defining Ports
CPW with Finite Ground Planes using INTERNAL and GROUND REF ports
Ports 1 and 2 are internal.
Ports 3, 4, 5, and 6 are ground reference . The grounds are
associated with the internal port using the editor.
Momentum Seminar
momentum_01_02 Page 44
Placing and Defining Ports
Remapping Port Numbers
Some designs contain non-consecutive port numbers. This results in simulation data files that
are difficult to use. When Momentum simulates designs containing non-consecutive port
numbers, the ports are remapped to consecutive numbers in the resulting data file. The
lowest port number is remapped to 1, and remaining numbers are remapped in consecutive
order. The port numbers are not changed in the design itself. A message in the Status
window announces the change, and lists the mappings.
For example, if you are simulating a design with ports numbered 37 and 101, the following
status message informs you of the changes:
Layout has non-consecutive port numbers.
Output files will have consecutive port numbers.
layout port -> output port
37 -> 1
101 -> 2
Port number remapping is done only for sampled and AFS CITIfiles and their corresponding
S-parameter datasets. It is not done for Visualization and far field files. The remapping is
done at the CITIfile level, and propagates to the dataset file. After remapping, all datasets
are in sync with the new port numbering.
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products and applications you select.
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products, applications or services, please
contact your local Agilent office. The
complete list is available at:
www.agilent.com/nd/contactus
Americas
Canada (877) 894-4414
Latin America 305 269 7500
United States (800) 829-4444
Asia Pacic
Australia 1 800 629 485
China 800 810 0189
Hong Kong 800 938 693
India 1 800 112 929
Japan 0120 (421) 345
Korea 080 769 0800
Malaysia 1 800 888 848
Singapore 1 800 375 8100
Taiwan 0800 047 866
Thailand 1 800 226 008
Europe & Middle East
Austria 0820 87 44 11
Belgium 32 (0) 2 404 93 40
Denmark 45 70 13 15 15
Finland 358 (0) 10 855 2100
France 0825 010 700*
*0.125 /minute
Germany 01805 24 6333**
**0.14 /minute
Ireland 1890 924 204
Israel 972-3-9288-504/544
Italy 39 02 92 60 8484
Netherlands 31 (0) 20 547 2111
Spain 34 (91) 631 3300
Sweden 0200-88 22 55
Switzerland 0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008
Product specications and descriptions
in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
For more information about
Agilent EEsof EDA, visit:
www.agilent.com/nd/eesof
Printed in USA, May 19, 2003
5989-9597EN
This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:
www.agilent.com/nd/eesof
Agilent EEsof EDA
Detailed Presentation on Momentum- Part 2 of 3
Momentum Seminar
momentum_01_03 Page 1
Details of Momentum
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results
Momentum Seminar
momentum_01_03 Page 2
Defining Mesh Parameters
Mesh Setup Control
Global mesh is the default.
But you have choices.
In general, small
patterns are more
accurate but take
more time to solve.
Momentum Seminar
momentum_01_03 Page 3
Defining Mesh Parameters
Global Mesh example with Edge Mesh
1 - Port
2 - Calibration Line
3 - Mesh
4 - Edge Mesh
1
4
3
2
NOTE: You can view the mesh, ports, and reference line
before simulating and make adjustments if desired.
Here, the cell size is the same for
all parts of the geometry, except for
the edges around each primitive.
The calibration line
is automatically
drawn when the
port is defined -
more on this later.
Momentum Seminar
momentum_01_03 Page 4
Defining Mesh Parameters
Primitive Mesh example
The center primitive of this geometry has a
different mesh (50 cells/wavelength) than the two
outside geometries (20 cells/wavelength).
1
2
You can combine primitive mesh,
layer mesh, and global mesh.
Next, lets discuss ports...
Momentum Seminar
momentum_01_03 Page 5
Discretion Error - Longitudinal
Number of cells/wavelength
determines samples used for
approximation of true currents
Typical cells/wavelength is 20
30 or more is fine, but will slow down
the simulation
Minimum required to retain high-
frequency accuracy is 10
Can retain accuracy AND speed with
10 cells/wavelength AND edge mesh
Remember, can also have layer-specific
meshes (or even object-specific
meshes) which allows finer meshes
where needed and coarser meshes
where current density is not as high
(such as a finite ground plane)
Momentum Seminar
momentum_01_03 Page 6
Edge Mesh Accuracy
Momentum Seminar
momentum_01_03 Page 7
Mesh: Momentum versus MomentumRF
Momentum RF & Polygon Mesh
Meshing complex geometries with POLYGONAL cells
Eliminates slivery triangles
Eliminates redundant R,L,C elements
Uncompromised accuracy for RF frequencies
Strongly reduced computer memory
Strongly reduced computation time
mesh topology
reduction
reduction
1
cell
4
cells
10
cells
Momentum Seminar
momentum_01_03 Page 8
Using Momentum
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results
B
1
(r) B
2
(r) B
3
(r)
I
1
I
2
I
3
I
1
I
2
I
3
C
1
1
C
22
C
12
L
1
1
L
23
L
22
L
1
3
L
12
L
33 R
22
/10
Method of Moments
Maxwells Equations
Matrix Equation
Equivalent Circuit
[Z].[I]=[V]
[Z] = [R] + j[L] + 1/j [C]
-1
Momentum Seminar
momentum_01_03 Page 9
The Low-frequency Breakdown Problem
This problem is essentially one of mathematical aspect ratios. When rooftop basis
functions are used, the interaction matrix contains all of the reactances in a single
matrix. As frequency approaches zero, the inductive reactances approach zero while the
capacitive reactances approach infinity. This results in an ill-conditioned matrix.
Any tool that uses rooftop functions as the sub-sectional basis functions will have this
problem.
Momentum (not Momentum RF) experiences this low-frequency limitation. To help
account for this, interpolation is used for three frequencies (in addition to the selected
sweeps): DC, f0, and 2f0. The low-frequency limit (f0, typically in kHz), which is
selected in an empirical way and is a function of cell edge lengths and substrate height,
increases as cell sizes decrease (resulting in shorter edges).
Momentum RF alleviates this problem by breaking the rooftop functions into
star and loop basis functions.
Momentum Seminar
momentum_01_03 Page 10
MomentumRF & Star-Loop Basis Functions
star basis function loop basis function
Loop basis functions are solenoidal
Star basis functions are irrotational Rooftop basis functions
Star-loop basis functions
db(S11)
db(S21)
db(S11) db(S21)
1
2
- give well-conditioned interaction
matrix at low frequencies
- eliminate LF breakdown of
numerical solution
- give stable, accurate solutions
down to DC (both magnitude and
phase)
Momentum Seminar
momentum_01_03 Page 11
Using Momentum
Solution process
Select Mode
Substrate definition
Port Setup
Mesh Generation
Planar Solve
Display Results
More on this in the next section
Momentum Seminar
momentum_01_03 Page 12
Momentum Accuracy: A couple of absolutes
Directly simulated frequency points have 60 dB accuracy. (This noise floor was
characterized on through-lines. In other words, the observed numerical noise on
those structures is ~ -60 dB. This does not mean that valid results of < -60 dB
can not be obtained for designs with an isolation or other figure of merit that is <
-60 dB.)
For an AFS sweep, the simulated frequency points have 60 dB accuracy while the
AFS calculated frequency points have ~ 50 to 60 dB accuracy
The rest depends on how accurately you can define your problem.
Here are a few benchmarks
Momentum Seminar
momentum_01_03 Page 13
Momentum
Mesh: 20 cells/wavelength, 3 GHz
Frequencies: 14
Matrix size : 218
Process size : 14.13 MB
User time : 5 m 14 s
Momentum RF
Mesh: 20 cells/wavelength, 3 GHz
Frequencies: 10
Matrix size : 56
Process size : 7.59 MB
User time : 45 s
(*)
Example from National Semiconductor
LTCC Filter Design
Momentum
Momentum RF
Measurements
7.29
mm
[1] 25.2 mil
LTCC
GND
AIR
[2] 3.6 mil
[3] 7.2 mil
dB(S21)
phase(S21)
Momentum Seminar
momentum_01_03 Page 14
RFIC/MMIC Applications
Momentum
Mesh: 20 cells/wavelength, 5 GHz
Frequencies: 7
Matrix size : 274
Process size : 10.29 MB
User time : 11m 09s
Momentum RF
Mesh: 20 cells/wavelength, 5 GHz
Frequencies: 7
Matrix size : 35
Process size : 3.33 MB
User time : 1m 39s
Momentum
Momentum RF
Measurements
0.30
mm
0.80
mm
[1] 600 um
Silicon =12.5
GND
AIR
[2] 1.7 um
[3] 1.55 um

r
=3.9

r
=3.9
Rule of thumb: freq < 176 GHz
PC-NT Pentium II workstation (330 MHz)
dB(S11)
dB(S21)
Momentum Seminar
momentum_01_03 Page 15
RFIC / MMIC Applications
Momentum
Momentum RF
Measurements
Momentum
Mesh: 20 cells/wavelength, 50 GHz
Frequencies: 12
Matrix size : 221
Process size : 6.32 MB
User time : 2 m 03 s
Momentum RF
Mesh: 20 cells/wavelength, 50 GHz
Frequencies: 10
Matrix size : 203
Process size : 4.50 MB
User time : 0 m 26 s
[1] 100 um GaAs
GND
AIR
0.76
mm
1.65
mm
Rule of thumb: freq < 83.3 GHz
PC-NT Pentium II workstation (330 MHz)
Momentum Seminar
momentum_01_03 Page 16
Microwave Lowpass Filter (Stripline)
Momentum
Mesh: 20 cells/wavelength, 15 GHz
Frequencies: 20
Process size : 18.07 MB
User time : 36 m 07 s
Momentum RF
Mesh: 20 cells/wavelength, 15 GHz
Frequencies: 15
Process size : 12.29 MB
User time : 2 m 21 s
mag(S21)
mag(S11)
6.0 mm
25.4
mm
Rule of thumb: freq < 5.76 GHz
[1] 31 mil Duroid
GND
[2] 31 mil Duroid
GND
Momentum
Momentum RF
Measurements
PC-NT Pentium II workstation (330 MHz)
Momentum Seminar
momentum_01_03 Page 17
RF Board Power/Ground
Momentum
Momentum RF
Measurements
[1] 59 mil
AIR
GND
FR4
50.8
mm
76.2
mm
P1 P2
50.8
mm
76.2
mm
P1 P2
Rule of thumb: freq < 1.63 GHz
Momentum RF
Process size : 15.0 MB
User time : 4 m 41 s
Momentum RF
Process size : 17.0 MB
User time : 5 m 33 s
Momentum
Process size : 20.2 MB
User time : 50 m 29 s
Momentum
Process size : 20.8 MB
User time : 30 m 42 s
PC-NT Pentium II workstation (330 MHz)
Momentum Seminar
momentum_01_03 Page 18
RF Board Application
Momentum
Mesh: 20 cells/wavelength, 1 GHz
Ports: 60
Frequencies: 6
Matrix size : 3428
Process size : 152.48 MB
User time : 11h 04m 51s
reduced polygonal mesh
rectangular & triangular mesh
Momentum RF
Mesh: 20 cells/wavelength, 1 GHz
Ports: 60
Frequencies: 6
Matrix size : 733
Process size : 59.35 MB
User time : 48m 24s
Speed & Capacity
memory: 3 x
speed: 14 x
35.60 mm
43.67 mm
[1] 30 mil
AIR
GND
FR4
PC-NT Pentium II workstation (330 MHz)
FYI
Momentum Seminar
momentum_01_03 Page 19
Packaging Application
S(1,3)
S(1,1)
Momentum
Mesh: 20 cells/wavelength, 5 GHz
Matrix size : 8244
Process size : > 1 GB
User time : > 2 days
Momentum RF
Mesh: 20 cells/wavelength, 5 GHz
Matrix size : 1354
Process size : 106.57 MB
User time : 5h 17m 53s
Rule of thumb: freq < 13.8 GHz
port 1
port 2
port 3
7.6 mm
7.6 mm
port 4
ref 3
ref 4
S(1,2)
S(1,4)
1 2
4 3
ref 3 ref 4
GND
V
board
V
chip
epoxi
FR4
PC-NT Pentium II workstation (330 MHz)
FYI
Momentum Seminar
momentum_01_03 Page 20
Microwave Applications
Momentum
Mesh: 10 cells/wavelength, 20 GHz
Frequencies: 18
Matrix size : 181
Process size : 2.92 MB
User time : 1 m 02 s
Momentum
Momentum RF
Momentum RF
Mesh: 10 cells/wavelength, 20 GHz
Frequencies: 14
Matrix size : 122
Process size : 2.13 MB
User time : 0 m 09 s
radiated
power
mag(S21)
mag(S11)
[1] 25 mil Alumina
GND
AIR
6.65
mm
9.90
mm
Rule of thumb: freq < 12.5 GHz
PC-NT Pentium II workstation (330 MHz)
FYI
Momentum Seminar
momentum_01_03 Page 21
Microwave Applications
Momentum
Mesh: 20 cells/wavelength, 7 GHz
Frequencies: 27
Process size : 8.26 MB
User time : 7 m 53 s
Momentum RF
Mesh: 20 cells/wavelength, 7 GHz
Frequencies: 25
Process size : 4.75 MB
User time : 0 m 29 s
5.21
mm
24.82 mm
Momentum
Momentum RF
mag(S21)
mag(S11)
Rule of thumb: freq < 5.9 GHz
[1] 25 mil Alumina
GND
[2] 185 mil AIR
PC-NT Pentium II workstation (330 MHz)
FYI
Momentum Seminar
momentum_01_03 Page 22
Digital Application
full board
isolated trace
port 1
port 2
port 1
port 2
S(1,1)
isolated trace
S(1,2)
isolated trace
Momentum
Momentum RF
S(1,1)
full board
S(1,2)
full board
FYI
Momentum Seminar
momentum_01_03 Page 23
Digital Application
isolated trace
port 1
port 2
0.4 GHz
output
S(1,1)
isolated trace
S(1,2)
isolated trace
FYI
Momentum Seminar
momentum_01_03 Page 24
Digital Application
isolated trace
port 1
port 2
harmonic signal
2.33 GHz
resonance
blocks the signal
no output
S(1,1)
isolated trace
S(1,2)
isolated trace
FYI
Momentum Seminar
momentum_01_03 Page 25
Digital Application
harmonic signal
2.33 GHz
harmonic signal is coupled to neighboring traces
and spread around the board
FYI
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products and applications you select.
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Quickly choose and use your test
equipment solutions with condence.
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Agilent Direct
www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:
www.agilent.com/nd/contactus
Americas
Canada (877) 894-4414
Latin America 305 269 7500
United States (800) 829-4444
Asia Pacic
Australia 1 800 629 485
China 800 810 0189
Hong Kong 800 938 693
India 1 800 112 929
Japan 0120 (421) 345
Korea 080 769 0800
Malaysia 1 800 888 848
Singapore 1 800 375 8100
Taiwan 0800 047 866
Thailand 1 800 226 008
Europe & Middle East
Austria 0820 87 44 11
Belgium 32 (0) 2 404 93 40
Denmark 45 70 13 15 15
Finland 358 (0) 10 855 2100
France 0825 010 700*
*0.125 /minute
Germany 01805 24 6333**
**0.14 /minute
Ireland 1890 924 204
Israel 972-3-9288-504/544
Italy 39 02 92 60 8484
Netherlands 31 (0) 20 547 2111
Spain 34 (91) 631 3300
Sweden 0200-88 22 55
Switzerland 0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008
Product specications and descriptions
in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
For more information about
Agilent EEsof EDA, visit:
www.agilent.com/nd/eesof
Printed in USA, May 19, 2003
5989-9598EN
This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:
www.agilent.com/nd/eesof
Agilent EEsof EDA
Detailed Presentation on Momentum- Part 3 of 3
Momentum Seminar
momentum_02_01 Page1
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1]
Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
Momentum Seminar
momentum_02_01 Page2
freq Independent frequency variable
GAMMAn Modal propagation constant of port n (calculated for single,
differential, and coplanar ports only)
PORTZn Impedance of Port n
S S-matrix, normalized to PORTZn
S(i,j) S-parameters for each port pairing, normalized to PORTZn
S_50 S-matrix, normalized to 50 ohms
S_50(i,j) S-parameters for each port pairing, normalized to 50 ohms
S_Z0 S-matrix, normalized to Z0
S_Z0(i,j) S-parameters for each port pairing, normalized to Z0 of each port
Z0n Characteristic impedance of Port n (calculated for single,
differential, and coplanar ports only, others are 50 ohms)
Momentum Datasets
Variables Available in the Standard Dataset
(Note that these are included in the datasets for Momentum simulations but not for MomentumRF)
Momentum Seminar
momentum_02_01 Page3
All standard dataset variables, plus
S_CONV Boolean results for AFS convergence (success=1, fail=0)
of the entire S-matrix at a given frequency
S_CONV(i,j) Boolean results for AFS convergence (success=1, fail=0)
of S(i,j) at a given frequency
S_ERROR Estimated error of the entire S-matrix at a given frequency
(< -60 dB for converged frequency points)
S_ERROR(i,j) Estimated error of S(i,j) at a given frequency
(< -60 dB for converged frequency points)
Momentum Datasets
Variables Available in the AFS Dataset
Momentum Seminar
momentum_02_01 Page4
Adaptive Frequency Sampling
Simple Answer to Convergence
AFS has converged unless it tells you that it hasn't converged (e.g., when the max number of points
that you specified was too low)
Momentum Seminar
momentum_02_01 Page5
AFS Convergence Illustration
Momentum Seminar
momentum_02_01 Page6
AFS Convergence
Momentum Seminar
momentum_02_01 Page7
THETA Swept parameter of planar cut
PHI Swept parameter of conical cut
Etheta & Ephi Absolute E field strength (V) of theta and phi far-field components
Htheta & Hphi Absolute H field strength (A) of theta and phi far-field components
Elhp & Erhp Normalized E field strength of LHCP and RHCP far-field components
ARcp Axial ratio, derived from LHCP and RHCP far-field components
Eco & Ecross Normalized E field strength of co and cross polarized far-field comp
ARlp Linear polarization axial ratio, derived from co and cross polarized
far-field components
Gain, Directivity Gain, Directivity, Efficiency (in %), and Effective area (in m
2
)
Efficiency,
Effective Area
Power Radiation intensity (in watts/steradian)
Momentum Datasets
Variables Available in the Far-field Dataset
Momentum Seminar
momentum_02_01 Page8
Currents (surface currents)
S-parameters (mag, re, im, phase, and dB of S(i,j))
Transmission line data (propagation constant, characteristic impedance)
Far-fields (radiation patterns & axial ratio in 3D and 2D)
Antenna parameters (gain, directivity, pointing angle, etc.)
Momentum Visualization
Momentum Visualization Enables You to View and Analyze...
Momentum Seminar
momentum_02_01 Page9
Momentum Visualization: Surface Currents
When you scroll from 0-360,
you are actually varying the
phase which illustrates the
e^jwt time dependency of
the surface currents
The lower and upper values input
into these fields represents the
lowest and highest values of the
surface current density (A/m)
which will be viewed
Note that you can also see the
effects of an edge mesh in the
current visualization (the skin
effect is emphasized)
You also have the
option to look at the
animated currents
when click on the
Display Properties
button
Note: when you are viewing the results for a slot metallization layer, the MAGNETIC currents are plotted instead of the
ELECTRIC currents. You will also be viewing the mesh in the slots instead of a mesh on the conductors when viewing the
mesh for a slot layer.
Momentum Seminar
momentum_02_01 Page10
Momentum Visualization: Surface Currents
Momentum Seminar
momentum_02_01 Page11
Momentum Visualization:
Far-field Radiation Patterns and S-parameters
Radiation Patterns are
only available with
Momentum results, not
MomentumRF
Momentum Seminar
momentum_02_01 Page12
ADS Data Display: S-parameters, L, and Q of an Inductor
Powerful post processing data display allows you to take
advantage of countless built-in functions and provides the
flexibility to wrote your own (through both measurement
equations in a schematic or equations in a data display page).
www.agilent.com/nd/emailupdates
Get the latest information on the
products and applications you select.
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equipment solutions with condence.
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Agilent Direct
www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:
www.agilent.com/nd/contactus
Americas
Canada (877) 894-4414
Latin America 305 269 7500
United States (800) 829-4444
Asia Pacic
Australia 1 800 629 485
China 800 810 0189
Hong Kong 800 938 693
India 1 800 112 929
Japan 0120 (421) 345
Korea 080 769 0800
Malaysia 1 800 888 848
Singapore 1 800 375 8100
Taiwan 0800 047 866
Thailand 1 800 226 008
Europe & Middle East
Austria 0820 87 44 11
Belgium 32 (0) 2 404 93 40
Denmark 45 70 13 15 15
Finland 358 (0) 10 855 2100
France 0825 010 700*
*0.125 /minute
Germany 01805 24 6333**
**0.14 /minute
Ireland 1890 924 204
Israel 972-3-9288-504/544
Italy 39 02 92 60 8484
Netherlands 31 (0) 20 547 2111
Spain 34 (91) 631 3300
Sweden 0200-88 22 55
Switzerland 0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008
Product specications and descriptions
in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
For more information about
Agilent EEsof EDA, visit:
www.agilent.com/nd/eesof
Printed in USA, May 19, 2003
5989-9599EN
This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:
www.agilent.com/nd/eesof
Agilent EEsof EDA
Detailed Presentation on MomentumAdvanced
Topics - (Part 1 of 5)
Momentum Seminar
momentum_03_01 Page 1
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1]
Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
Momentum Seminar
momentum_03_01 Page 2
Momentum Component (EM/circuit co-simulation)
ADS circuit simulation
Layout setup
Momentum Component Generation
EM/Circuit co-simulation from the
schematic environment
Transparent integration of electromagnetic
simulators at the schematic design level
Include physical layout parasitics in
schematic
Momentum simulation options accessible
from schematic
Compiled Layout Components listed in
projects hierarchy
Model database for reuse option
ADS 2002C: EM/Circuit co-
optimization
Momentum Seminar
momentum_03_01 Page 3
Momentum Component (EM/circuit co-simulation)
Example included in ADS 2002 & higher
EM/Circuit co-simulation from the
schematic environment
C:\ADS2002\Examples\Momentum\emcktcosim\LTCC_prj
Momentum Seminar
momentum_03_01 Page 4
Momentum Component (EM/circuit co-simulation)
Example included in ADS 2002 & higher
EM/Circuit co-simulation from the
schematic environment
C:\ADS2002\Examples\Momentum\emcktcosim\LNAEmCktCosim_prj
Momentum Seminar
momentum_03_01 Page 5
Momentum Component (EM/circuit co-simulation)
Example included in ADS 2002 & higher
Example begins with schematic of LNA
and uses Layout>Generate/Update
Layout to create artwork
2. Note that vendor component libraries
were utilized for lumped element and
active device artwork. Also note that
a ground plane has been added with
uniform clearance around
traces/components.
Momentum Seminar
momentum_03_01 Page 6
Momentum Component (EM/circuit co-simulation)
Example included in ADS 2002 & higher
3. A symbol is defined for the schematic
subcircuit and then it is placed in a top
level design for simulation using the
component library browser. (The
results of this simulation will be
compared to the results of the next
simulation, which will include the
physical effects.)
Momentum Seminar
momentum_03_01 Page 7
Momentum Component (EM/circuit co-simulation)
Example included in ADS 2002 & higher
4. The artwork is now modified to
include the vias (to connect the
poured ground plane to the explicit
ground plane) and ports are placed at
all connection points (input, output,
bias, and on each node of the lumped
elements)
Momentum Seminar
momentum_03_01 Page 8
Momentum Component (EM/circuit co-simulation)
Example included in ADS 2002 & higher (slightly modified)
5. The standard example is then slightly
modified to include layout component
parameters (new in ADS 2002C).
These parameters will be used to see
the effects of a via location on gain.
Layout/Momentum
Component parameters
will be discussed more
later (co-optimization)
Modified version provided:
(LNAEmCktCosim_prj.zap)
Momentum Seminar
momentum_03_01 Page 9
Momentum Component (EM/circuit co-simulation)
Example included in ADS 2002 & higher (slightly modified)
6. The Layout/Momentum component is
then created
Momentum Seminar
momentum_03_01 Page 10
Momentum Component (EM/circuit co-simulation)
Example included in ADS 2002 & higher (slightly modified)
7. Next, the Layout/Momentum component is placed in a schematic using the component library browser (just
like any other subcircuit/component). All of the lumped elements and the active device are then connected to
the pins (ports in layout are replaced with pins in the Momentum Component symbol).
Momentum Seminar
momentum_03_01 Page 11
Momentum Component (EM/circuit co-simulation)
Example included in ADS 2002 & higher (slightly modified)
8. Once the model details are selected (Mode MomMW, MomRF, or data file; Frequency range; Mesh
properties), the parameters of the Layout/Momentum component are then defined to be variables, which will
be passed down from the top design. This is made possible by the next step, which uses the File>Design
Parameters submenu.
Momentum Seminar
momentum_03_01 Page 12
Momentum Component (EM/circuit co-simulation)
Example included in ADS 2002 & higher (slightly modified)
9. The variables are now defined for this subcircuit. Note that we could have just placed the Layout/Momentum
component directly into the top level schematic, but this illustrates two methods of parameterization in a
schematic.
Momentum Seminar
momentum_03_01 Page 13
Momentum Component (EM/circuit co-simulation)
Example included in ADS 2002 & higher (slightly modified)
10. The subcircuit that includes the
Layout/Momentum component is then
placed in a top level design for
simulation using the component
library browser. (The results of this
simulation will be compared to the
results of the original simulation,
which did not include the physical
effects.)
11. Note the use of variables which are
swept using the Parameter Sweep
component.
Momentum Seminar
momentum_03_01 Page 14
Momentum Component (EM/circuit co-simulation)
Example included in ADS 2002 & higher (slightly modified)
12. When each iteration of the S-parameter
simulation encounters the
Layout/Momentum component with
new values for parameters, a
Momentum simulation is also
automatically invoked in the
background (for each case that was
not previously solved).
Modified version provided:
(LNAEmCktCosim_prj.zap)
Momentum Seminar
momentum_03_01 Page 15
Momentum Component (EM/circuit co-simulation)
Example included in ADS 2002 & higher (slightly modified)
13. Finally, the results from each approach
are compared. Surface currents for
the Momentum component (layout) can
also be studied using Visualization.
Initial schematic simulation
Momentum component in schematic
Momentum component in schematic
with swept variable for via location
Modified version provided:
(LNAEmCktCosim_prj.zap)
Momentum Seminar
momentum_03_01 Page 16
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Adding Layout Parameters
Enables to sweep, tune or optimize geometrical variations in the
layout
- typical dimensions (length, width, gaps, spacing,)
- interdependent layout modifications (e.g. length and width varying simultaneously)
- port locations
Two ways to create a parameterized layout component
1. Using nominal/perturbed layout artwork (Momentum Optimization)
2. Using existing (built-in or GCC defined) layout artwork macros
Nominal/Perturbed layout parameter
Subnetwork layout parameter
NEW in ADS 2002C
Momentum Seminar
momentum_03_01 Page 17
Adding Layout Parameters
Momentum > Component > Parameters
Opens the Layout Component Parameters dialog
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Momentum Seminar
momentum_03_01 Page 18
Adding Layout Parameters
Defining a Nominal/Perturbed Layout Parameter
Define the name of the parameter
Define the type of parameter
Enter the nominal value
Enter the perturbed value
Edit the perturbation
if no AEL artwork macro available
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Momentum Seminar
momentum_03_01 Page 19
Adding Layout Parameters
Steps
1. Select points in layout
2. Select perturbation type
3. Insert perturbation values
4. Apply the perturbation
Repeat these steps
Click OK to terminate
AEL artwork macro is created
primitive layout component
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Momentum Seminar
momentum_03_01 Page 20
Adding Layout Parameters to a Subnetwork
Defining a Subnetwork Layout Parameter
Define the name of the parameter
Define the type of parameter
Enter the default value
Associate the parameter with a
subnetwork parameter
If artwork macro IS available
hierarchical layout component
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Momentum Seminar
momentum_03_01 Page 21
Adding Layout Parameters to a Subnetwork
Use the subnetwork layout parameter to set the parameter values of one or
more subnetwork parameters in the design
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Momentum Seminar
momentum_03_01 Page 22
Creating a Component
Momentum > Component > Create/Update
Opens the Create Momentum Component dialog
Dialog Entries: Symbol, Model Parameters and Model Database
These parameters are a
subset of the
Momentum simulation
control options in the
Layout Environment and
can be set from within
the Schematic
Environment
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Momentum Seminar
momentum_03_01 Page 23
EM Model Database
The simulated S-parameter models are
stored in an EM Model Database for later
reuse
During the Component Create/Update, the
user has the option to:
- delete all previous entries in the model
database
- add the last simulation results obtained
from Momentum simulation in Layout to
the model database
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Momentum Seminar
momentum_03_01 Page 24
Instance Parameter Dialog
Double clicking on the Layout Component Instances in the Schematic Design
Environment opens the Instance Parameter Dialog
In the Model Page, the user can specify the
- Model Type selection
- Model Parameter values
- Model Database Reuse option
In the Display Page, the user can specify
which model parameters are visible in the
schematic design
In the Parameters Page, the user can
specify the layout parameter values and
the optimization setup (optional)
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Momentum Seminar
momentum_03_01 Page 25
Model Interpolation
Pushing the Options.. button brings up
the Set Interpolation Options dialog
Allows to specify the interpolation delta
values for each layout parameter
Default values for the interpolation deltas are
provided (derived from the model parameters)
The EM model database can use
interpolation to significantly enhance
the efficiency of the co-simulation
The Layout Parameters are treated as
continuous parameters
Instance Dialog box
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Momentum Seminar
momentum_03_01 Page 26
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Electronic
notebook for
LTCC
EM/circuit co-
optimization
example
(shipped with
ADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_prj
Momentum Seminar
momentum_03_01 Page 27
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Electronic
notebook for
LTCC
EM/circuit co-
optimization
example
(shipped with
ADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_prj
Momentum Seminar
momentum_03_01 Page 28
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Electronic
notebook for
LTCC
EM/circuit co-
optimization
example
(shipped with
ADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_prj
Momentum Seminar
momentum_03_01 Page 29
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Electronic
notebook for
LTCC
EM/circuit co-
optimization
example
(shipped with
ADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_prj
Momentum Seminar
momentum_03_01 Page 30
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Electronic
notebook for
LTCC
EM/circuit co-
optimization
example
(shipped with
ADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_prj
Momentum Seminar
momentum_03_01 Page 31
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Electronic
notebook for
LTCC
EM/circuit co-
optimization
example
(shipped with
ADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_prj
Momentum Seminar
momentum_03_01 Page 32
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Electronic
notebook for
LTCC
EM/circuit co-
optimization
example
(shipped with
ADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_prj
Momentum Seminar
momentum_03_01 Page 33
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Electronic
notebook for
LTCC
EM/circuit co-
optimization
example
(shipped with
ADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_prj
Momentum Seminar
momentum_03_01 Page 34
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Electronic
notebook for
LTCC
EM/circuit co-
optimization
example
(shipped with
ADS 2002C and
higher) examples/Momentum/emcktcosim/LTCC_prj
Momentum Seminar
momentum_03_01 Page 35
Momentum Co-Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Electronic
notebook for
LTCC
EM/circuit co-
optimization
example
(shipped with
ADS 2002C and
higher)
examples/Momentum/emcktcosim/LTCC_prj
www.agilent.com/nd/emailupdates
Get the latest information on the
products and applications you select.
www.agilent.com/nd/agilentdirect
Quickly choose and use your test
equipment solutions with condence.
Agilent Email Updates
Agilent Direct
www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:
www.agilent.com/nd/contactus
Americas
Canada (877) 894-4414
Latin America 305 269 7500
United States (800) 829-4444
Asia Pacic
Australia 1 800 629 485
China 800 810 0189
Hong Kong 800 938 693
India 1 800 112 929
Japan 0120 (421) 345
Korea 080 769 0800
Malaysia 1 800 888 848
Singapore 1 800 375 8100
Taiwan 0800 047 866
Thailand 1 800 226 008
Europe & Middle East
Austria 0820 87 44 11
Belgium 32 (0) 2 404 93 40
Denmark 45 70 13 15 15
Finland 358 (0) 10 855 2100
France 0825 010 700*
*0.125 /minute
Germany 01805 24 6333**
**0.14 /minute
Ireland 1890 924 204
Israel 972-3-9288-504/544
Italy 39 02 92 60 8484
Netherlands 31 (0) 20 547 2111
Spain 34 (91) 631 3300
Sweden 0200-88 22 55
Switzerland 0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008
Product specications and descriptions
in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
For more information about
Agilent EEsof EDA, visit:
www.agilent.com/nd/eesof
Printed in USA, May 19, 2003
5989-9600EN
This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:
www.agilent.com/nd/eesof
Agilent EEsof EDA
Detailed Presentation on MomentumAdvanced
Topics - (Part 2 of 5)
Momentum Seminar
momentum_03_02 Page 1
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1]
Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
Momentum Seminar
momentum_03_02 Page 2
1. Polygon
2. Rectangle or square
3. Polyline
Vias must be mapped
through each individual
substrate layer they pass
through
An Aside: Vias in Momentum
For vias, only vertical currents and surface impedances are taken into account (for now). Keep in
mind that the horizontal and rotational currents are not included. One possible trick that might
be used to obtain more complete current calculations is to break up the via structure (could be any
shape, even that of a transmission line or spiral inductor) into a few thinner layers and include the
geometry on horizontal metallization layers as well. Make sure that provide the conductivity and
thickness parameters for only one of the horizontal metallization layers; otherwise, excess loss
will be calculated.
Momentum Seminar
momentum_03_02 Page 3
An Aside: Vias in Momentum
Vias are treated as one cell (in the vertical axis);
therefore, the thickness of substrates which
contain vias is limited to ~ 1/10th to 1/20th of
a wavelength (at the highest simulation
frequency). Vias passing through thicker
substrates can be accurately represented by
splitting these thick substrates into multiple
layers.
Please note that you can view both the mesh
and the surface current density (A/m) of via
structures using Momentum Visualization
Momentum Seminar
momentum_03_02 Page 4
Thick Conductor Simulations
Momentum model Finite Thickness Conductors
Zero thickness approach
loss formulation
Finite thickness approach
loss formulation
current modeling
Momentum Seminar
momentum_03_02 Page 5
Thick Conductor Simulations
Conductor Loss in Momentum: Zero Thickness Approach
The Surface Impedance Concept is used to model
conductor losses in metallizations

t
Z
s
(t,,)
3D conductor
Sheet conductor
The Surface Impedance Model Z
s
(t,,) takes the finite
thickness and frequency dependency (skin effect) of the
conductor loss into account
Momentum Seminar
momentum_03_02 Page 6
Thick Conductor Simulations
Conductor Loss in Momentum: Zero Thickness Approach
( ) t
j
j
Z
c s

coth
+
=
) ( j j
c
+ =

+ +
=
s s
s
t j j
Z

) 1 (
coth
) 1 (

2
=
s
>>
t
Z
s

1
=
s
s
j
Z

) 1 ( +
=
LF :
HF :
t

s
LF currents run in entire cross
section of the metalization
HF currents run in SINGLE skin
depth surface layer

The Surface Impedance formula:


=4.5e7 S/m
1 MHz 75 m
10MHz 23.7 m
100MHz 7.5 m
1 GHz 2.37 m
Skin depth
Momentum Seminar
momentum_03_02 Page 7
Thick Conductor Simulations
Conductor Loss in Momentum: Finite Thickness Approach
3D conductors:
drawn on 2 layers (, t/2) connected with vias
LF currents run in entire cross
section of the metalization
t/2

LF :
HF currents run in DOUBLE
skin depth surface layer


s
HF :
Better loss modeling
Better current modeling (inductive)
Z
s
(t/2,,) for top and
bottom metalization layer
Momentum Seminar
momentum_03_02 Page 8
Thick Conductor Simulations
Current Modeling in Momentum for 3D Conductors
x,y surface currents on top and bottom of finite thickness conductor
z-surface currents on vias (side walls of finite thickness conductor)
x
y
z
Momentum Seminar
momentum_03_02 Page 9
Thick Conductor Simulations
Conductor Loss in Momentum - what to use?
Rule of thumb:
w
t
w/t > 5
h/w > 10
h
Use 1 zero thickness conductor with correct loss specification (thickness, conductivity)
other cases
, t
, t/2
, t/2
strip
via
strip
2 metallization layers + vias
ground plane
Momentum Seminar
momentum_03_02 Page 10
Thick-conductor Approach: Two Approaches
, t/2
, t/2
strip
via
strip
2 metallization layers + vias
t
h
layer1: , t/2
layer2: , t/2 layer3: perfect conductor
Air (E
0
)
Substrate (E
r
)
thick conductor
Port 1
Port 2
For Single Trace Stimulus:
Common-mode ports
Port 1
Port 2
Port 3
Port 4
For Two or More Coupled Traces:
Single ports in layout, recombine as common-mode in schematic

Momentum Seminar
momentum_03_02 Page 11
Thick-conductor Approach: For Single Trace Stimulus
Port 3
Port 1
For Single Trace Stimulus:
Common-mode ports in Layout/Momentum are fine
Port 2
Port 4
Example:
Ports 1&3 are associated as
common-mode ports, as are
ports 2&4
Momentum Seminar
momentum_03_02 Page 12
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1]
Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
Momentum Seminar
momentum_03_02 Page 13
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example: initial layout for filter generated
from schematic (substrate definition also updated from schematic)
filter_thick_metal_prj/DA_CLFilter1_untitled1.dsn
Momentum Seminar
momentum_03_02 Page 14
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example: verify substrate and
metallization definitions
filter_thick_metal_prj/DA_CLFilter1_untitled1.dsn
Momentum Seminar
momentum_03_02 Page 15
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example: initial MomentumRF simulation
filter_thick_metal_prj/DA_CLFilter1_untitled1.dsn
Momentum Seminar
momentum_03_02 Page 16
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example: save as new design and flatten
components to enable copy-to-layer for the thick-conductor method
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Momentum Seminar
momentum_03_02 Page 17
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example: now begin copying the artwork
to the first two additional layers
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Momentum Seminar
momentum_03_02 Page 18
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example: now copy the artwork to the
second of two additional layers
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Momentum Seminar
momentum_03_02 Page 19
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example: modify substrate definitions to
include another substrate layer that is the thickness of the metal
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Momentum Seminar
momentum_03_02 Page 20
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example: map one of the copied artwork
layers as a strip conductor above the new conductor substrate and
the other as a via in the new conductor substrate
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Define the top and bottom conductors with
the proper conductivity and ONE-HALF
the total conductor thickness.
Momentum Seminar
momentum_03_02 Page 21
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example: place additional port on the
newly mapped strip conductor layer at each original port location
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Momentum Seminar
momentum_03_02 Page 22
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example: assign and associate the
overlapping ports as common-mode ports
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Momentum Seminar
momentum_03_02 Page 23
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example: define frequency sweep and
simulate
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Momentum Seminar
momentum_03_02 Page 24
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example: something to REMEMBER!
REMEMBER:
Vias may not coincide with a port or touch a port.
So how is this simulation accomplished?
Momentum Seminar
momentum_03_02 Page 25
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example
By slightly moving the coincident edge of the via layer
so that it no longer touches the port!
Step 1. Begin by making the via layer the only selectable layer
Momentum Seminar
momentum_03_02 Page 26
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example
Step 2. Drag a selection box around the edge to be moved
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Momentum Seminar
momentum_03_02 Page 27
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example
Step 3. Select the Move Relative tool
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Momentum Seminar
momentum_03_02 Page 28
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example
Step 4. Enter a sufficiently small (but non-zero) distance to move the
edge so that it does not exactly overlap the port.
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Momentum Seminar
momentum_03_02 Page 29
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example
Step 5. Zoom in to verify that the edge was indeed moved. Then repeat this for any other via edges that
coincided with a port. Now it is safe to simulate without errors.
filter_thick_metal_prj/DA_CLFilter1_untitled1_thick.dsn
Momentum Seminar
momentum_03_02 Page 30
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example: compare results for different approaches
filter_thick_metal_prj/compare_approaches.dds
Momentum Seminar
momentum_03_02 Page 31
Thick-conductor Approach: For Single Trace Stimulus
Microstrip Coupled-line Filter Example
filter_thick_metal_prj/compare_approaches.dds Note that for cases that do not include coupled port
stimuli, Momentum common-mode ports yield
correct results. This can be verified by re-defining
these ports as Single ports and then recombining
the ports as common-mode in a schematic. The
results are compared below (and are identical). We
will see that only the latter approach is valid for
cases that include coupled ports.
Momentum Seminar
momentum_03_02 Page 32
Thick-conductor Approach: For Coupled Traces
For Two or More Coupled Traces:
Use Single ports in the Layout Momentum Simulation
Recombine these results as common-mode ports in a schematic (this
will ensure port calibration for the coupled ports)
Port 7
Port 1
Port 8
Port 2
Port 9
Port 3
Layout
Schematic
Example:
Ports 1-12 are Single ports
Port 4
Port 10
Port 5
Port 11
Port 6
Port 12
Term 1
Term
Term1
Z=50 Ohm
Num=1
Term 2
Term
Term1
Z=50 Ohm
Num=1
Term 3
Term
Term1
Z=50 Ohm
Num=1
Term 4
Term
Term1
Z=50 Ohm
Num=1
Term 5
Term
Term1
Z=50 Ohm
Num=1
Term 6
Term
Term1
Z=50 Ohm
Num=1
Momentum Seminar
momentum_03_02 Page 33
Thick-conductor Approach: For Coupled Traces
(When the Momentum Dataset is Available Method 1)
Using an SnP data item
(S12P in this example)
OR
Tips/Tricks
Place an S2P
Data Item
Use on-
screen
editing to
change S2P
to S12P
Use S12P data
item to access
dataset from
Momentum
To reduce wiring confusion,
use wire/pin label tool to
make connections
p_1
p_2
p_3
p_4 p_5 p_6
p_1
p_2
p_3
p_4 p_6 p_5 S12P
SNP1
File="coupled_lines_thick_momRF_50_single_ports.ds"
2
3
10 11 12
7
8
9
4 6 5
Ref
1
p_6
Term
Term6
Z=50 Ohm
Num=6
p_4
Term
Term4
Z=50 Ohm
Num=4
p_5
Term
Term5
Z=50 Ohm
Num=5
p_3
Term
Term3
Z=50 Ohm
Num=3
p_2
Term
Term2
Z=50 Ohm
Num=2
p_1
Term
Term1
Z=50 Ohm
Num=1
S_Param
SP1
Step=
Stop=
Start=
S-PARAMETERS
Momentum Seminar
momentum_03_02 Page 34
Using a Layout/Momentum
Component as a data item
Tips/Tricks
To reduce wiring confusion,
use wire/pin label tool to
make connections
Use the component library
browser to place the
Momentum Component
Note that since the 12 layout ports in this
example need to be reconnected as 6
common-mode ports, it is acceptable (even
desirable) for the pin connections to short
together each pair of pins in this component
symbol. (It is impossible not to since the pins
co-exist from this top view of the layout.)
Be sure to select Dataset as the ModelType
(not Momentum MW or Momentum RF) and then
browse to the Momentum dataset that uses all
Single ports
Thick-conductor Approach: For Coupled Traces
(When the Momentum Dataset is Available Method 2)
p_3 p_4
p_2 p_5
p_1 p_6
Lead_frame_package_thick_momRF_50_single_ports_component
Lead_frame_package_thick_momRF_50_single_ports_component_1
ModelFile=".\data\Lead_frame_package_thick_momRF_50_single_ports.ds"
ModelType=Dataset
Ref
Term
Term1
Z=50 Ohm
Num=1
p_1
Term
Term2
Z=50 Ohm
Num=2
p_2
Term
Term3
Z=50 Ohm
Num=3
p_3
Term
Term5
Z=50 Ohm
Num=5
p_5
Term
Term4
Z=50 Ohm
Num=4
p_4
Term
Term6
Z=50 Ohm
Num=6
p_6
S_Param
SP1
Step=
Stop=
Start=
S-PARAMETERS
Momentum Seminar
momentum_03_02 Page 35
Comments on Overlapping (Birds Eye View)
Ports in Momentum Layout Components
When would the pins in the Layout Component symbol overlap/short?
When common-mode ports overlap on different layout layers (same xy-coordinates,
different z-coordinates). You usually want these ports to be connected/shorted in the
schematic, as shown in the previous slide.
When internal ports and ground reference ports overlap on different layers (same xy-
coordinates, different z-coordinates). You usually DO NOT want the pins for internal
ports to overlap/short pins that represent the ground reference ports in the schematic.
Momentum Seminar
momentum_03_02 Page 36
Comments on Overlapping (Birds Eye View)
Ports in Momentum Layout Components
(Workarounds for cases when you DO NOT want the pins for internal
ports to overlap/short pins for ground references in the schematic)
How do I avoid shorting these pins together?
When the ports are attached to an edge, it doesn't matter WHERE on that edge the port is attached, because
the current is injected in a distributed manner along the edge. So, shifting the ground reference port(s)
slightly won't make any difference in the results. The Layout Component symbol will now reflect non-
overlapping pins for the internal and ground reference ports.
When the ports are point injection ports (in the middle of the metal) then shifting them WILL make a
difference in results, so be careful. So what are your options when this is the case?
Edit the symbol page of a layout component symbol! When the Layout component is created, edit its
symbol page and look for the port pins. You can move them a little in order to correctly use the ones
that are on top of each other. This will not change the results. I have tried this and it works! You just
need to be sure to remember which pin is which, or label them with text in the symbol.
Use the "black box" symbol, then all is fine. This would be less work than the prior suggestion, but it
would not be as "pretty.
The next example will also demonstrate this
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Austria 0820 87 44 11
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*0.125 /minute
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Israel 972-3-9288-504/544
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Revised: March 27, 2008
Product specications and descriptions
in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
For more information about
Agilent EEsof EDA, visit:
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Printed in USA, May 19, 2003
5989-9601EN
This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
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Detailed Presentation on MomentumAdvanced
Topics - (Part 3 of 5)
Momentum Seminar
momentum_03_02 Page 1
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1]
Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
Momentum Seminar
momentum_03_03 Page 1
Thick Conductor Simulations
Coupled Lines Example: starting in a schematic
coupled_lines_prj/mlayer_lib.dsn
Momentum Seminar
momentum_03_03 Page 2
Thick Conductor Simulations
Coupled Lines Example: Layout>Generate/Update Layout
coupled_lines_prj/mlayer_lib.dsn
Momentum Seminar
momentum_03_03 Page 3
Thick Conductor Simulations
Coupled Lines Example: Auto generated layout
coupled_lines_prj/mlayer_lib.dsn
Momentum Seminar
momentum_03_03 Page 4
Thick Conductor Simulations
Coupled Lines Example: Update substrate definition from schematic
coupled_lines_prj/mlayer_lib.dsn
Momentum Seminar
momentum_03_03 Page 5
Thick Conductor Simulations
Coupled Lines Example: verify substrate and map metal layers
coupled_lines_prj/mlayer_lib.dsn
Momentum Seminar
momentum_03_03 Page 6
Thick Conductor Simulations
Coupled Lines Example: edit/assign port types
coupled_lines_prj/mlayer_lib.dsn
Momentum Seminar
momentum_03_03 Page 7
Thick Conductor Simulations
Coupled Lines Example: flatten component
coupled_lines_prj/mlayer_lib.dsn
Momentum Seminar
momentum_03_03 Page 8
Thick Conductor Simulations
Coupled Lines Example: save as new design
coupled_lines_prj/coupled_lines_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 9
Thick Conductor Simulations
Coupled Lines Example: setup mesh
coupled_lines_prj/coupled_lines_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 10
Thick Conductor Simulations
Coupled Lines Example: setup simulation (zero-
thickness conductor standard approach)
coupled_lines_prj/coupled_lines_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 11
Thick Conductor Simulations
Coupled Lines Example: save as new name to be used for
thick conductor approach
coupled_lines_prj/coupled_lines_thick_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 12
Thick Conductor Simulations
Coupled Lines Example: make an empty layer insertable
coupled_lines_prj/coupled_lines_thick_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 13
Thick Conductor Simulations
Coupled Lines Example: select original geometries
coupled_lines_prj/coupled_lines_thick_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 14
Thick Conductor Simulations
Coupled Lines Example: copy original geometries to the empty layer
coupled_lines_prj/coupled_lines_thick_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 15
Thick Conductor Simulations
Coupled Lines Example: make another empty layer insertable
coupled_lines_prj/coupled_lines_thick_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 16
Thick Conductor Simulations
Coupled Lines Example: copy geometries to this third layout layer
coupled_lines_prj/coupled_lines_thick_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 17
Thick Conductor Simulations
Coupled Lines Example: modify substrate to include a dummy layer for
the metal thickness and map the new (copied) via and strip layers
Note: the conductor
thickness has been split
between the top and
bottom strip layers that
form the new thick
conductor shell.
coupled_lines_prj/coupled_lines_thick_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 18
Thick Conductor Simulations
Coupled Lines Example: insert ports on the newly mapped top
metallization layer
coupled_lines_prj/coupled_lines_thick_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 19
Thick Conductor Simulations
Coupled Lines Example: assign/associate ports as common mode
coupled_lines_prj/coupled_lines_thick_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 20
Thick Conductor Simulations
Coupled Lines Example: setup the new simulation
coupled_lines_prj/coupled_lines_thick_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 21
Thick Conductor Simulations
Coupled Lines Example: save as new name to be used for
New thick conductor approach
coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports.dsn
Momentum Seminar
momentum_03_03 Page 22
Thick Conductor Simulations
Coupled Lines Example: re-define ports as Single ports
coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports.dsn
Momentum Seminar
momentum_03_03 Page 23
Thick Conductor Simulations
Coupled Lines Example: setup the new simulation
coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports.dsn
Momentum Seminar
momentum_03_03 Page 24
Thick Conductor Simulations
Coupled Lines Example: now, recombine single port data as common-mode
coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_schematic.dsn
Accomplished by either using an SnP data item
Momentum Seminar
momentum_03_03 Page 25
Thick Conductor Simulations
Coupled Lines Example: now, recombine single port data as common-mode
coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_component_schematic.dsn
or by using a Layout/Momentum Component as a data item
NOTE: IF the version of ADS that
you are using shows unconnected
pins (red diamond around pin)
when using this Layout
Component method, please edit
the Layout Component symbol so
that you can see both pins for
those that overlap. If the
connection is good (blue), then no
need to worry about this.
Momentum Seminar
momentum_03_03 Page 26
Thick Conductor Simulations
Coupled Lines Example: re-defining Layout Component symbol
coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_component_schematic.dsn
Step 1. Push into symbol in
schematic
Momentum Seminar
momentum_03_03 Page 27
Thick Conductor Simulations
Coupled Lines Example: re-defining Layout Component symbol
coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_component.dsn
Step 2. Enable symbol view
Momentum Seminar
momentum_03_03 Page 28
Thick Conductor Simulations
Coupled Lines Example: re-defining Layout Component symbol
coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_component.dsn
Step 3. Separate
overlapping pins by moving
one of each pair.
Momentum Seminar
momentum_03_03 Page 29
Thick Conductor Simulations
Coupled Lines Example: re-defining Layout Component symbol
coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_component_test.dsn
Step 4. After separating all
overlapping pins, save the
design. Note that the
specific location of each pin
is inconsequential since this
is only the symbol, not the
actual artwork!
Momentum Seminar
momentum_03_03 Page 30
Thick Conductor Simulations
Coupled Lines Example: re-defining Layout Component symbol
coupled_lines_prj/coupled_lines_thick_momRF_50_single_ports_component_schematic_test.dsn
Step 5. Now you can
successfully wire all pins.
(No more unconnected pins!)
Momentum Seminar
momentum_03_03 Page 31
Thick Conductor Simulations
Coupled Lines Example: open a data display to compare results
coupled_lines_prj/compare_approaches.dds
Please note the following details regarding this data display:
This data display contains 3 pages (return loss, insertion loss, and coupling
data)
There are actually 5 approaches being compared (which are all included in this
coupled_lines_prj project). The 5 designs are:
coupled_lines_momRF_50.dsn standard MomRF simulation using Single ports
coupled_lines_thick_momRF_50.dsn thick-metal simulation using common-mode ports
coupled_lines_thick_momRF_50_single.dsn thick-metal simulation using our legacy
approach with only one Single port per node
coupled_lines_thick_momRF_50_single_ports_schematic.dsn schematic re-combination
of MomRF simulation using TWO Single ports per node (using SnP data item)
coupled_lines_thick_momRF_50_single_ports_component_schematic_test.dsn schematic
re-combination of MomRF simulation using TWO Single ports per node (using Layout
Component as a data item)
Approach #4 and approach #5
are equivalent AND are the best
method for this type of
simulation
Momentum Seminar
momentum_03_03 Page 32
Thick Conductor Simulations
Coupled Lines Example: comparing return loss (log magnitude & phase)
coupled_lines_prj/coupled_lines_thick_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 33
Thick Conductor Simulations
Coupled Lines Example: comparing insertion loss (log magnitude & phase)
coupled_lines_prj/coupled_lines_thick_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 34
Thick Conductor Simulations
Coupled Lines Example: comparing coupling (log magnitude)
coupled_lines_prj/coupled_lines_thick_momRF_50.dsn
Momentum Seminar
momentum_03_03 Page 35
Thick Conductor Simulations
Coupled Lines Example: visualizing various approaches
Momentum Seminar
momentum_03_03 Page 36
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1]
Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
Momentum Seminar
momentum_03_03 Page 37
spiral_param
spiral_param_1
Ref
Spiral Inductor Simulations
Spiral Inductor simulation will be shown with the Advanced Model
Composer Lab
The project LTCC_example_AMC_prj illustrates co-simulation, swept parameters of a Layout component, co-
optimization, and Advanced Model Composer capabilities for a multilayer LTCC spiral inductor. The
inductance (L) and quality factor (Q) are calculated for several parameter values (length of sides, length of
input line, length of output line). This highlights the usage of nominal/perturbed parameters.
An additional example is included for reference. The archived ADS
project is entitled AMC_lab1_prj.zap and is discussed in detail (with
specific steps to perform) in the presentation 2003A_physical_design.ppt.
This highlights the usage of subnetwork parameters.
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Agilent Direct
www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:
www.agilent.com/nd/contactus
Americas
Canada (877) 894-4414
Latin America 305 269 7500
United States (800) 829-4444
Asia Pacic
Australia 1 800 629 485
China 800 810 0189
Hong Kong 800 938 693
India 1 800 112 929
Japan 0120 (421) 345
Korea 080 769 0800
Malaysia 1 800 888 848
Singapore 1 800 375 8100
Taiwan 0800 047 866
Thailand 1 800 226 008
Europe & Middle East
Austria 0820 87 44 11
Belgium 32 (0) 2 404 93 40
Denmark 45 70 13 15 15
Finland 358 (0) 10 855 2100
France 0825 010 700*
*0.125 /minute
Germany 01805 24 6333**
**0.14 /minute
Ireland 1890 924 204
Israel 972-3-9288-504/544
Italy 39 02 92 60 8484
Netherlands 31 (0) 20 547 2111
Spain 34 (91) 631 3300
Sweden 0200-88 22 55
Switzerland 0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008
Product specications and descriptions
in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
For more information about
Agilent EEsof EDA, visit:
www.agilent.com/nd/eesof
Printed in USA, May 19, 2003
5989-9602EN
This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:
www.agilent.com/nd/eesof
Agilent EEsof EDA
Detailed Presentation on MomentumAdvanced
Topics - (Part 4 of 5)
Momentum Seminar
momentum_04_01 Page 1
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1]
Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
Momentum Seminar
momentum_04_01 Page 2
Advanced Model Composer (new in ADS 2003A)
Previous ADS Capabilities
Model Composer ADS 2001
Fast & accurate circuit-level
passive parameterized models
created w/ Momentum EM
technology
Automated model generation
Patented MAPS technology
Custom standard-shape
microstrip & stripline libraries
and substrates
Generates model, symbol &
layout
Provided with Linear license
New in ADS 2003A
Advanced Model Composer
Model Composer capabilities
plus:
Arbitrary user-defined
parameterized shapes
Passive components including
spiral inductors, TFR, etc.
No end-user license required for
use of model in schematic
Model generation uses AMC and
Momentum license
ADS Design Kit format
Momentum Seminar
momentum_04_01 Page 3
Previous ADS Capabilities
Integrated Momentum EM Simulator
Momentum RF
Model Composer
Co-Simulation w/Layout Components
Co-Optimization w/Layout Components
New in ADS 2003A
Advanced Model Composer
Arbitrary shapes
Parameterized
Creates Design Kit
Automated
Fast Simulation
No end-user license required
Momentum
Queuing/Batch processing
30 GHz transition
Advanced Model Composer (new in ADS 2003A)
Momentum Seminar
momentum_04_01 Page 4
Advanced Model Composer (new in ADS 2003A)
Generate libraries for wide array of custom shaped parameterized passive
models, including:
Spiral inductors
Thin Film Resistors
MIM capacitors
Arbitrary shaped
matching networks
Generated Libraries dont
require usage license
Generated Libraries dont
require usage license
Momentum EM engine
modeling source
Momentum EM engine
modeling source
MAPS patented technique
for compact model fitting
MAPS patented technique
for compact model fitting
Momentum Seminar
momentum_04_01 Page 5
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1]
Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
Momentum Seminar
momentum_04_01 Page 6
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example that utilizes all of these capabilities!
LTCC_example_AMC_prj/spiral_param.dsn
Note that the starting point for this
design was the spiral.dsn included in
the LTCC emcktcosim project.
Momentum Seminar
momentum_04_01 Page 7
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: baseline design to which we will add parameters
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar
momentum_04_01 Page 8
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: add first parameter for the input line length
LTCC_example_AMC_prj/spiral_param.dsn
Note that the perturbation will need to have a
magnitude of 50 um
Momentum Seminar
momentum_04_01 Page 9
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: select the objects to be moved and enter the
perturbation type and value
LTCC_example_AMC_prj/spiral_param_length_in.dsn
Momentum Seminar
momentum_04_01 Page 10
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: click OK to return to main design
LTCC_example_AMC_prj/spiral_param_length_in.dsn
Momentum Seminar
momentum_04_01 Page 11
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: now add parameter for output line length
LTCC_example_AMC_prj/spiral_param.dsn
Note that the perturbation will need to have a
magnitude of 50 um
Momentum Seminar
momentum_04_01 Page 12
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example : select the objects to be moved and enter the
perturbation type and value
LTCC_example_AMC_prj/spiral_param_length_out.dsn
Momentum Seminar
momentum_04_01 Page 13
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: click OK to return to main design
LTCC_example_AMC_prj/spiral_param_length_out.dsn
Momentum Seminar
momentum_04_01 Page 14
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: now add parameter for length of spiral sides
LTCC_example_AMC_prj/spiral_param.dsn
Note that each perturbation will need to have a
total magnitude of 100 um
Momentum Seminar
momentum_04_01 Page 15
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: select the objects to be moved and enter the
perturbation type and value
LTCC_example_AMC_prj/spiral_param_length_sides.dsn
Stretch (shrink) objects on left side of spiral
Momentum Seminar
momentum_04_01 Page 16
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: select the objects to be moved and enter the
perturbation type and value
LTCC_example_AMC_prj/spiral_param_length_sides.dsn
Stretch (shrink) objects on top side of spiral
Momentum Seminar
momentum_04_01 Page 17
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: select the objects to be moved and enter the
perturbation type and value
LTCC_example_AMC_prj/spiral_param_length_sides.dsn
Stretch (shrink) objects on right side of spiral
Momentum Seminar
momentum_04_01 Page 18
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: select the objects to be moved and enter the
perturbation type and value
LTCC_example_AMC_prj/spiral_param_length_sides.dsn
Stretch (shrink) objects on bottom side of spiral
Momentum Seminar
momentum_04_01 Page 19
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: click OK to return to main design
LTCC_example_AMC_prj/spiral_param_length_sides.dsn
All sides are now 100 um shorter
Momentum Seminar
momentum_04_01 Page 20
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: click OK to accept parameters
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar
momentum_04_01 Page 21
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: create a layout component symbol for schematic use
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar
momentum_04_01 Page 22
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: click OK to create Layout Component symbol
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar
momentum_04_01 Page 23
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: use component library browser to locate a place an
instance of the Layout Component in a new schematic
LTCC_example_AMC_prj/spiral_param_schematic.dsn
Momentum Seminar
momentum_04_01 Page 24
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: Layout Component placed, now setup simulation
LTCC_example_AMC_prj/spiral_param_schematic.dsn
Momentum Seminar
momentum_04_01 Page 25
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: double-click Layout Component to verify model details
LTCC_example_AMC_prj/spiral_param_schematic.dsn
Momentum Seminar
momentum_04_01 Page 26
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: now verify values of parameters (0 nominal value)
LTCC_example_AMC_prj/spiral_param_schematic.dsn
Momentum Seminar
momentum_04_01 Page 27
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: baseline results for the Inductor
LTCC_example_AMC_prj/spiral_param_schematic.dds
(page L and Q)
Momentum Seminar
momentum_04_01 Page 28
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: baseline results for the Inductor (L & Q only)
LTCC_example_AMC_prj/spiral_param_schematic.dds
(page L and Q only)
Momentum Seminar
momentum_04_01 Page 29
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: setup a swept parameter simulation
LTCC_example_AMC_prj/spiral_param_schematic_sweep.dsn
Momentum Seminar
momentum_04_01 Page 30
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: view resulting L & Q for each parameter sweep
LTCC_example_AMC_prj/spiral_param_schematic.dds
(page L and Q only (swept params))
Momentum Seminar
momentum_04_01 Page 31
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: re-use swept cases to optimize for desired L & Q
LTCC_example_AMC_prj/spiral_param_schematic_optimize.dsn
Momentum Seminar
momentum_04_01 Page 32
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: optimized L & Q (and resulting parameter values)
LTCC_example_AMC_prj/spiral_param_schematic.dds
(page L and Q only (optimize))
Momentum Seminar
momentum_04_01 Page 33
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: create Advanced Model Composer model
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar
momentum_04_01 Page 34
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: define specific sweep types for model parameters
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar
momentum_04_01 Page 35
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: define specific sweep types for model parameters
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar
momentum_04_01 Page 36
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: during model generation, can view status at any time
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar
momentum_04_01 Page 37
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: can see status of current simulation, too
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar
momentum_04_01 Page 38
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: final status model generation complete
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar
momentum_04_01 Page 39
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: create design kit
LTCC_example_AMC_prj/spiral_param.dsn
Momentum Seminar
momentum_04_01 Page 40
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: install design kit to access the AMC model
Momentum Seminar
momentum_04_01 Page 41
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: selecting the design kit files and installation level
Momentum Seminar
momentum_04_01 Page 42
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: successful installation of kit
Momentum Seminar
momentum_04_01 Page 43
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: use component library browser again to find AMC
model from installed design kit
LTCC_example_AMC_prj/spiral_param_schematic_sweep_AMC.dsn
Momentum Seminar
momentum_04_01 Page 44
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: select DK AMC model from Layout Components library
LTCC_example_AMC_prj/spiral_param_schematic_sweep_AMC.dsn
Momentum Seminar
momentum_04_01 Page 45
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: note that parameters are just as any standard
component, now (not a Momentum Layout Component) define values
LTCC_example_AMC_prj/spiral_param_schematic_sweep_AMC.dsn
Momentum Seminar
momentum_04_01 Page 46
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: compare swept parameter results to those from
Momentum Layout Component results
LTCC_example_AMC_prj/spiral_param_schematic.dds (page L and Q only (swept params, compare co-sim vs AMC))
Momentum Seminar
momentum_04_01 Page 47
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: optimize for L & Q using AMC model
LTCC_example_AMC_prj/spiral_param_schematic_optimize_AMC.dsn
Momentum Seminar
momentum_04_01 Page 48
Momentum Co-Simulation, Co-Optimization, and AMC
An LTCC Spiral example: compare results (desired L & Q values obtained with both AMC and
Momentum Layout Component if want same optimum parameter values, would need to
lock values of 2 params and optimize 1)
LTCC_example_AMC_prj/spiral_param_schematic.dds (page L and Q only (optimize, compare co-sim vs AMC))
Momentum Seminar
momentum_04_01 Page 49
Example: Tuning of layout parameters
microstrip coupled stubs
2 layout parameters: L1 and L2
L1
L2
Step 1. Parameter Sweep
to fill the EM model database
L1 [mil]
L2 [mil]
m000
100 130
100
130
variable L1 = L2 = L mil
sweep L = 100 130 mil step 3 mil
Momentum Co-Optimization/Tuning
EM/circuit TUNING (layout/Momentum components with parameters)
Coupled_stubs
example
(shipped with
ADS 2002C and
higher)
examples/Momentum/emcktcosim/Coupled_Stubs_tune_prj
Momentum Seminar
momentum_04_01 Page 50
Example: Tuning of layout parameter
Step 2. Set the Interpolation Delta equal to or greater than the distance
between the samples
L1-step = 3 mil
L2-step = 3 mil
Delta = 6 mil
Momentum Co-Optimization/Tuning
EM/circuit TUNING (layout/Momentum components with parameters)
Coupled_stubs
example
(shipped with
ADS 2002C and
higher)
examples/Momentum/emcktcosim/Coupled_Stubs_tune_prj
Momentum Seminar
momentum_04_01 Page 51
Example: Tuning of layout parameter
Step 3. Start the tuning session
Momentum Co-Optimization/Tuning
EM/circuit TUNING (layout/Momentum components with parameters)
Coupled_stubs
example
(shipped with
ADS 2002C and
higher)
Momentum Seminar
momentum_04_01 Page 52
New in
ADS 2003A
Batch Mode Simulation
Batch mode simulations are setup and controlled using the Queue Manager dialog box. The Queue Manager is automatically started when
submitting a queued job, or it can be invoked by selecting Tools > Queue manager in the ADS Main window. Exiting ADS will stop the
Momentum queue and all running jobs.
When the queue is running in normal operation (queue connected), the first waiting job will automatically start after the current job
finishes. If the queue is in Queue Disconnected mode, then the first waiting job will not start automatically when the current job finishes.
When connected, the Queue Manager can be used to view jobs in the queue. When the queue is disconnected, or hasn't been started, the
Queue Manager not only can be used to view jobs in the queue but can also be used to add jobs, modify or delete scheduled jobs, or
change the order of jobs in the queue.
Note Jobs cannot be modified using the Queue Manager when they are currently active (simulating). To modify these jobs, disconnect
the queue, stop the simulation, (see Stopping a Simulation) make your modifications, and resume.
To run a batch mode simulation:
Define the design you want to simulate.
In the Momentum > Simulation > S- parameters dialog box, select Queued in the Process Mode and then select simulate.
Repeat the previous two steps to add additional simulations to the queue.
Select Start Simulations in the Queue Manager to begin simulating after all simulations are queued.
Note If the Queue Manager indicates that simulations are running when they are not, type queue_reset() in the command line
dialog box to fix the problem.
Note: Momentum Batch Mode Queue Manager
Caution Running Momentum simulations in parallel (e.g., a direct Momentum simulation and a queued Momentum simulation)
from the same ADS session may cause the loss of simulation data if both simulations end simultaneously
Note When Momentum batch simulations are run from different projects, the active project directory changes when the
simulation finishes if a new one needs to be loaded from a different project.
Momentum Seminar
momentum_04_01 Page 53
Note: Momentum Batch Mode (Legacy Method)
This is discussed in great detail (with an included example project,
L_optimize_using_artwork_macro_prj.zap) in the appendix
provided in the seminar CD. This method also includes a legacy
parametric design capability.
www.agilent.com/nd/emailupdates
Get the latest information on the
products and applications you select.
www.agilent.com/nd/agilentdirect
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equipment solutions with condence.
Agilent Email Updates
Agilent Direct
www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:
www.agilent.com/nd/contactus
Americas
Canada (877) 894-4414
Latin America 305 269 7500
United States (800) 829-4444
Asia Pacic
Australia 1 800 629 485
China 800 810 0189
Hong Kong 800 938 693
India 1 800 112 929
Japan 0120 (421) 345
Korea 080 769 0800
Malaysia 1 800 888 848
Singapore 1 800 375 8100
Taiwan 0800 047 866
Thailand 1 800 226 008
Europe & Middle East
Austria 0820 87 44 11
Belgium 32 (0) 2 404 93 40
Denmark 45 70 13 15 15
Finland 358 (0) 10 855 2100
France 0825 010 700*
*0.125 /minute
Germany 01805 24 6333**
**0.14 /minute
Ireland 1890 924 204
Israel 972-3-9288-504/544
Italy 39 02 92 60 8484
Netherlands 31 (0) 20 547 2111
Spain 34 (91) 631 3300
Sweden 0200-88 22 55
Switzerland 0800 80 53 53
United Kingdom 44 (0) 118 9276201
Other European Countries:
www.agilent.com/nd/contactus
Revised: March 27, 2008
Product specications and descriptions
in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
For more information about
Agilent EEsof EDA, visit:
www.agilent.com/nd/eesof
Printed in USA, May 22, 2003
5989-9603EN
This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or
inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilents
line of EEsof electronic design automation (EDA) products and services, please go to:
www.agilent.com/nd/eesof
Agilent EEsof EDA
Detailed Presentation on MomentumAdvanced
Topics - (Part 5 of 5)
Momentum Seminar
momentum_04_01 Page 1
Agenda for Half-day Momentum Seminar
30 minutes Brief overview of Getting Started with Momentum
Creating/importing artwork in ADS Layout
Momentum versus Momentum RF
Creating substrate stack-ups and mapping layout layers as metallization layers
Placing and defining ports
Defining mesh parameters
30 minutes Overview of Viewing and Using Momentum Results
Momentum Datasets
Momentum Visualization: currents, fields, s-parameters, gamma, Z0
ADS Data Display: s-, y-, and z-parameters, reactance (L/C), Q, etc.
60 minutes Advanced Topics [Part 1]
Momentum Co-simulation (EM/circuit co-simulation) using Layout Components
Momentum Co-optimization (EM/circuit co-optimization) using Layout Components
Thick conductor simulations {LAB}
Spiral Inductor simulations {LAB}
15 minutes Break
105 minutes Advanced Topics [Part 2]
Advanced Model Composer (AMC)
Advanced Model Composer (AMC) {LAB}
15 minutes Final Q&A Session
4 hours 15 minutes
Momentum Seminar
momentum_04_01 Page 2
Extras Whats in the Folder?
Momentum Box/Waveguide Information
This is a topic for which some advanced users might want to
know the theory behind our implementation.
For a thorough discussion on how the standard waveguide and
box models are implemented, see the document:
Box_waveguide.pdf
Momentum Seminar
momentum_04_01 Page 3
Extras Whats in the Folder?
Momentum Configuration Information
Momentum config file.txt
Momentum Seminar
momentum_04_01 Page 4
Extras Whats in the Folder?
RLGC Netlist from MomentumRF Information
MomentumRF_RLGC_equivalent_circuit_netlist.ppt
Momentum Seminar
momentum_04_01 Page 5
Extras Whats in the Folder?
Material Properties DesignGuide
Materials.deb
Momentum Seminar
momentum_04_01 Page 6
Extras Whats in the Folder?
Material Properties DesignGuide
Materials.deb
Momentum Seminar
momentum_04_01 Page 7
Extras Whats in the Folder?
Material Properties DesignGuide
Materials.deb
Momentum Seminar
momentum_04_01 Page 8
Remember
Momentum Examples
Included with ADS
Momentum Seminar
momentum_04_01 Page 9
Momentum Product Webpage: http://eesof.tm.agilent.com/products/e8921a-a.html
Momentum Technical Articles Webpage: http://eesof.tm.agilent.com/products/e8921a-b.html#Technical Articles
Co-simulation with Momentum Layout Components
(online demo): http://eesof.tm.agilent.com/demos/#usability
Free MomentumRF NetSeminar (from 2001): http://netseminar.com/nss/showSeminar?sem_num=413
Advanced Model Composer Product Webpage: http://eesof.tm.agilent.com/products/e8926a-a.html
AMC Technical Articles Webpage: http://eesof.tm.agilent.com/products/e8926a-b.html#Technical Articles
Momentum Training Class Webpage: http://eesof.tm.agilent.com/products/e8921a-d.html#Training Classes
(also available as eTraining class): http://eesof.tm.agilent.com/education/etraining.html
Momentum Support Docs on Knowledge Center:
http://edasupportweb.soco.agilent.com:7778/portal/page?_pageid=36,34228&_dad=portal&_schema=PORTAL&cid=53737&a=1&lang=1
Momentum Support Examples on Knowledge Center:
http://edasupportweb.soco.agilent.com:7778/portal/page?_pageid=36,34228&_dad=portal&_schema=PORTAL&cid=8895
Momentum Discussion Forum on Knowledge Center:
http://edasupportweb.soco.agilent.com:7778/cgi-bin/yabb/YaBB.pl?board=ads_momentum
Momentum Manual (online version): http://eesof.tm.agilent.com/docs/adsdoc2002C/mom/index.html
Knowledge Center: http://www.agilent.com/find/eesof-knowledgecenter
Tech Support: http://www.agilent.com/find/eesof-support
Remember Links to Additional Momentum Resources
Momentum Seminar
momentum_04_01 Page 10
Wrap-up: Q & A
Questions?
www.agilent.com/nd/emailupdates
Get the latest information on the
products and applications you select.
www.agilent.com/nd/agilentdirect
Quickly choose and use your test
equipment solutions with condence.
Agilent Email Updates
Agilent Direct
www.agilent.com
For more information on Agilent Technologies
products, applications or services, please
contact your local Agilent office. The
complete list is available at:
www.agilent.com/nd/contactus
Americas
Canada (877) 894-4414
Latin America 305 269 7500
United States (800) 829-4444
Asia Pacic
Australia 1 800 629 485
China 800 810 0189
Hong Kong 800 938 693
India 1 800 112 929
Japan 0120 (421) 345
Korea 080 769 0800
Malaysia 1 800 888 848
Singapore 1 800 375 8100
Taiwan 0800 047 866
Thailand 1 800 226 008
Europe & Middle East
Austria 0820 87 44 11
Belgium 32 (0) 2 404 93 40
Denmark 45 70 13 15 15
Finland 358 (0) 10 855 2100
France 0825 010 700*
*0.125 /minute
Germany 01805 24 6333**
**0.14 /minute
Ireland 1890 924 204
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MomentumAppendix
Momentum Seminar
Page 1
APPENDIX
Graphical Cell Compiler (GCC)
Momentum Batch Simulations
A Method for Utilizing Momentum Batch
Simulation Results in EM/circuit Co-
optimizations (useful before true co-optimization
was introduced)
Momentum Optimization (a review of the
original capability)
Momentum Seminar
Page 2
Note: Momentum CAN be run in a batch mode
Obtain usermenu.ael and instructions from your local ADS Applications Engineer (AE).
Once you load usermenu.ael in your $HOME/hpeesof/de/ael directory (this is usually the
users/default/hpeesof/de/ael directory), restart ADS and you will see a new user menu in the layout window
that enables you to run Momentum in a batch mode.
You can even sweep the parameters of a parameterized design.
Momentum Seminar
Page 3
Momentum Optimization using Batch Simulation
First Step : Initial Layout entry (example using Graphical Cell Compiler)
This GCC macro was taken from
\ADS2003A\Examples\RF_Board
\GCC_examples_prj
Momentum Seminar
Page 4
Custom Layout Macros: Graphical Cell Compiler
ADS Components can call custom layout macros
Allows for Parameter-driven geometry creation
Layout Macros are AEL functions
Graphical Cell Compiler can be used to generate layout macros
Writing your own macros allows for extra flexibility:
-ports placed on specific layers
-rounding functions to keep ports on-grid
-custom warning or error messages
-physical dimensions calculated from electrical data
-Boolean flags to control layout - clockwise, counter-clockwise, etc.
FYI
Momentum Seminar
Page 5
Graphical Cell Compiler (Macro): Introduction
Purpose:
adding Parameterized Artwork Macros (PAM)
Advantages:
simpler than coding in AEL
getting started very quickly
create a special model quickly, without the need to know AEL
FYI
Momentum Seminar
Page 6
Graphical Cell Compiler
Macro control operations:
GStretch / Move
GFlip / Rotate
GRepeat
GPolar
Viewer
GModify
GAdd
GDelete
GDetail
Compile
FYI
Momentum Seminar
Page 7
Graphical Cell Compiler
Flip / Rotate
Repeat Polar
rotation = 0
rotation = 33
rotation = 90
repeat x and y = 5 x 4
polar sweep PI radians
polygon
rectangle
circle
path
polyline
Stretch
stretch = 150 mil
stretch = - 25 mil
original
original
original
original
FYI
Momentum Seminar
Page 8
GCC Example
becomes
start with Parameterized Inductor that is a
function of :
turns
space
width
sides
C:\ADS2003A\Examples\RF_Board\GCC_examples_prj
FYI
Momentum Seminar
Page 9
GCC: How to build a PAM
1) Define the artwork graphically in a Layout window
2) Define parameters to control the artwork dimensions
3) Compile the macro
4) Set the parameter default values and save the macro
5) Insert the new component (macro) in a layout
6) Edit the parameters for each instance of the new component
FYI
Momentum Seminar
Page 10
GCC: How to build a PAM, Step 1
Define the artwork graphically in a Layout window
- the first step is to design your artwork macro

This artwork will be used as an element and will be able to be


- stretched in length
- stretched in width
- rotated
- repeated
FYI
Momentum Seminar
Page 11
GCC: How to build a PAM, Step 2
Define parameters to effect the artwork
Macro > Stretch Macro > Rotate/Mirror
Macro > Repeat... Macro > Polar
Macro > Width Macro > User-Defined...
before defining parameters, draw construction lines
use the Macro toolbar to define parameters
FYI
Momentum Seminar
Page 12
GCC: How to build a PAM, Step 2
FYI
Momentum Seminar
Page 13
GCC: How to build a PAM, Step 3
Compile the macro
- Macro>Compile
- the macro will be saved as
<design_name>_art.ael
- the model name is the name
used to select the artwork
from the libary
FYI
Momentum Seminar
Page 14
GCC: How to build a PAM, Step 4
Set the parameter default values and save the macro:
Macro > Compile
File > Design/Parameters
In the General tab :
define the characteristics
of the sub-network
FYI
Momentum Seminar
Page 15
GCC: How to build a PAM, Step 4
In the Parameter tab :
- set the default values
- default values are used
when the PAM is placed
FYI
Momentum Seminar
Page 16
GCC: How to build a PAM, Step 5&6
Insert the new component (macro) in a layout
Edit the parameters for that instance of the new component
- parameters can be edited when the PAM is inserted or later
FYI
Momentum Seminar
Page 17
Momentum Optimization using Batch Simulation
First Step : Initial Layout entry (example using Graphical Cell Compiler)
Momentum Seminar
Page 18
Momentum Optimization using Batch Simulation
First Step : Initial Layout entry (place instance in new layout)
Momentum Seminar
Page 19
Momentum Optimization using Batch Simulation
First Step : Initial Layout entry (assign parameters and add ports)
Momentum Seminar
Page 20
Momentum Optimization using Batch Simulation
First Step : Initial Layout entry (enter substrate/metallization data)
Momentum Seminar
Page 21
Momentum Optimization using Batch Simulation
First Step : Initial Layout entry (enter mesh data)
Momentum Seminar
Page 22
Momentum Optimization using Batch Simulation
Second Step : use parametric design menu to generate designs
Momentum Seminar
Page 23
Momentum Optimization using Batch Simulation
Second Step : use parametric design menu to generate designs
Only bug in this unsupported AEL approach is that if you are sweeping a parameter that is
unitless, you will see these errors and will need to go into each design to delete the None text.
THIS WILL NOT OCCUR IF YOU ARE SWEEPING A PARAMETER THAT HAS UNITS.
Momentum Seminar
Page 24
Momentum Optimization using Batch Simulation
Second Step : use parametric design menu to generate designs
Momentum Seminar
Page 25
Momentum Optimization using Batch Simulation
Second Step : use parametric design menu to generate designs
Momentum Seminar
Page 26
Momentum Optimization using Batch Simulation
Second Step : use parametric design menu to generate designs
Momentum Seminar
Page 27
Momentum Optimization using Batch Simulation
Second Step : use parametric design menu to generate designs
Momentum Seminar
Page 28
Momentum Optimization using Batch Simulation
Third Step : prepare for Batch simulation (note that designs were
automatically added to que)
Momentum Seminar
Page 29
Momentum Optimization using Batch Simulation
Fourth Step : Batch simulation
Momentum Seminar
Page 30
Momentum Optimization using Batch Simulation
Fifth Step : create discrete model subcircuit (use DAC to access the
data)
Momentum Seminar
Page 31
Momentum Optimization using Batch Simulation
Fifth Step : create discrete model subcircuit (assign a parameter to
sweep through data using File>Design Parameters)
Momentum Seminar
Page 32
Momentum Optimization using Batch Simulation
Fifth Step : create discrete model subcircuit (create a symbol optional)
Momentum Seminar
Page 33
Momentum Optimization using Batch Simulation
Sixth Step : use discrete model subcircuit in top level schematic to
sweep data (use component library browser)
Momentum Seminar
Page 34
Momentum Optimization using Batch Simulation
Sixth Step : use discrete model subcircuit in top level schematic to
sweep data
Momentum Seminar
Page 35
Momentum Optimization using Batch Simulation
Sixth Step : use discrete model subcircuit in top level schematic to
sweep data (viewing swept data)
Momentum Seminar
Page 36
Momentum Optimization using Batch Simulation
Seventh Step : use the dataset from the simulation (which interpolated
data by means of S-parameter controller) and verify results vs discrete
Momentum Seminar
Page 37
Momentum Optimization using Batch Simulation
Seventh Step : use the dataset from the simulation (verify results vs
discrete swept data results)
Momentum Seminar
Page 38
Momentum Optimization using Batch Simulation
Eighth Step : now you can use the interpolated approach to simulate a
new case WITHOUT using Momentum again
Momentum Seminar
Page 39
Momentum Optimization using Batch Simulation
Eighth Step : now you can use the interpolated approach to simulate a
new case WITHOUT using Momentum again (view data)
Momentum Seminar
Page 40
Momentum Optimization using Batch Simulation
Ninth Step : now you can even optimize the parameter (within the bounds
of the initial swept range of the parameter) of this EM-based model to
achieve a given behavior (optimizing for inductance)
Momentum Seminar
Page 41
Momentum Optimization using Batch Simulation
Ninth Step : now you can even optimize the parameter (within the bounds
of the initial swept range of the parameter) of this EM-based model to
achieve a given behavior (optimizing for inductance viewing iterations)
Momentum Seminar
Page 42
Momentum Optimization using Batch Simulation
Ninth Step : now you can even optimize the parameter (within the bounds
of the initial swept range of the parameter) of this EM-based model to
achieve a given behavior (update optimized value and re-simulate w/o opt)
Momentum Seminar
Page 43
Momentum Optimization using Batch Simulation
Ninth Step : now you can even optimize the parameter (within the bounds
of the initial swept range of the parameter) of this EM-based model to
achieve a given behavior (viewing optimized results)
Momentum Seminar
Page 44
Momentum Optimization using Batch Simulation
Tenth Step : you could also setup other parameters to be swept or
optimized to achieve other desired performance/behavior
Momentum Seminar
Page 45
Momentum Optimization using Batch Simulation
Tenth Step : you could also setup other parameters to be swept or
optimized to achieve other desired performance/behavior
Note: No errors encountered since these parameters have units!
Momentum Seminar
Page 46
Momentum Optimization using Batch Simulation
Tenth Step : you could also setup other parameters to be swept or
optimized to achieve other desired performance/behavior
Momentum Seminar
Page 47
Momentum Optimization using Batch Simulation
Tenth Step : you could also setup other parameters to be swept or optimized to achieve
other desired performance/behavior (now use this data in a similar test bench to the
previous steps)
Momentum Seminar
Page 48
Momentum Optimization using Batch Simulation
That was a great capability, but is
there a more automated process?
Now there is! You can benefit from
both EM/circuit co-optimization and
Advanced Model Composer to
accomplish this and more!
Momentum Seminar
Page 49
Another way to optimize...
Momentum Optimization
EM/circuit co-optimization (layout/Momentum components with parameters)
Adding Layout Parameters
Enables to sweep, tune or optimize geometrical variations in the
layout
- typical dimensions (length, width, gaps, spacing,)
- interdependent layout modifications (e.g. length and width varying simultaneously)
- port locations
Two ways to create a parameterized layout component
1. Using nominal/perturbed layout artwork (Momentum Optimization)
2. Using existing (built-in or GCC defined) layout artwork macros
Nominal/Perturbed layout parameter
Subnetwork layout parameter
NEW in ADS 2002C
Momentum Seminar
Page 50
Advanced Model Composer (new in ADS 2003A)
Previous ADS Capabilities
Model Composer ADS 2001
Fast & accurate circuit-level
passive parameterized models
created w/ Momentum EM
technology
Automated model generation
Patented MAPS technology
Custom standard-shape
microstrip & stripline libraries
and substrates
Generates model, symbol &
layout
Provided with Linear license
New in ADS 2003A
Advanced Model Composer
Model Composer capabilities
plus:
Arbitrary user-defined
parameterized shapes
Passive components including
spiral inductors, TFR, etc.
No end-user license required for
use of model in schematic
Model generation uses AMC and
Momentum license
ADS Design Kit format
Momentum Seminar
Page 51
Previous ADS Capabilities
Integrated Momentum EM Simulator
Momentum RF
Model Composer
Co-Simulation w/Layout Components
Co-Optimization w/Layout Components
New in ADS 2003A
Advanced Model Composer
Arbitrary shapes
Parameterized
Creates Design Kit
Automated
Fast Simulation
No end-user license required
Momentum
Queuing/Batch processing
30 GHz transition
Advanced Model Composer (new in ADS 2003A)
Momentum Seminar
Page 52
Advanced Model Composer (new in ADS 2003A)
Generate libraries for wide array of custom shaped parameterized passive
models, including:
Spiral inductors
Thin Film Resistors
MIM capacitors
Arbitrary shaped
matching networks
Generated Libraries dont
require usage license
Generated Libraries dont
require usage license
Momentum EM engine
modeling source
Momentum EM engine
modeling source
MAPS patented technique
for compact model fitting
MAPS patented technique
for compact model fitting
Momentum Seminar
Page 53
Momentum Optimization
A Review of the Legacy Approach
L
Optimization means varying physical dimensions to
achieve S-parameter goals.
Flashback!
Momentum Seminar
Page 54
C:\ADS2002\Examples\Momentum\optimization\double_folded_stub_filter_prj
Momentum Optimization
A Review of the Legacy Approach: example included with ADS
Momentum Seminar
Page 55
Nominal
Value
W
20
W + W
Perturbed
Value
25
Select the vertices that
represent the variable
(W). The result is
another layout.
1
3
Start here...
Name the variable
and set the values.
Nominal layout: line.dsn
Perturbed layout: line_W.dsn
4
2
Momentum Optimization
A Review of the Legacy Approach: Parameters used to perturb
Momentum Seminar
Page 56
1
Goals require Frequency values and
Response values (S-parameters).
2
Activated = 0
Not Activated = X
Multiple goals can
be set up with various
weighting: For example,
W = 5 means the Error* is
multiplied by 5. The
greater the weight, the
greater the goal importance.
*Error for optimization is a
measure of how much the
goal differs from the
solution. Zero error means
the solution = goal.
Momentum Optimization
A Review of the Legacy Approach: Optimization goals
Momentum Seminar
Page 57
3
4
Finally, simulate the optimized layout
and display the results.
Goal achieved: Optimal value.
Optimization
status...
1
2
Momentum Optimization
A Review of the Legacy Approach: Optimization control
Momentum Seminar
Page 58
GEOMETRY:
Keep structures electrically small
Make the drawing as simple as possible
Take advantage of symmetries
Make text notes in the layout, schematic, or data displays for reference
OPTIMIZATION:
Make a written list of parameters and limit the number you use
Perform what-if analyses in ADS circuit simulator
In general, plan the base geometry for optimization.
Create geometry that allows modification of parameters.
But there are new ways to optimize...
See Momentum co-simulation/co-optimization and Advanced Model
Composer in the main presentation. Also, see Momentum batch
simulation content in this appendix.
Momentum Optimization
A Review of the Legacy Approach: Summary of Tips
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Revised: March 27, 2008
Product specications and descriptions
in this document subject to change
without notice.
Agilent Technologies, Inc. 2008
For more information about
Agilent EEsof EDA, visit:
www.agilent.com/nd/eesof
Printed in USA, May 20, 2003
5989-9605EN

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