Semiconductor Laser

1
Ming-Chang Lee, Integrated Photonic Devices

Semiconductor Lasers
Class: Integrated Photonic Devices
Time: Fri. 8:00am ~ 11:00am.
Classroom: 206
Lecturer: Prof. (Ming-Chang Lee)
Principles of Laser Operation
Pumping sources
(optical and electrical)
Noise
Amplifier is the gain
medium (population
inversion)
Positive feedback is
provided by a
resonator (Fabry-
Perot Etalon, Bragg
Grating, Ring
Resonator,)
Initial stimulus
comes from
spontaneous
emission (noise)
Saturation is reached
when gain = loss
Laser = Gain medium + Cavity
2
Basic Structure of p-n Junction Laser Diode
Epitaxial growth of a p-type layer on an n-type substrate
GaAs, Ga
(1-x)
Al
x
As, Ga
x
In
(1-x)
As
(1-y)
P
y
are often used for different
wavelengths
Ohmic contacts
Two parallel end faces are used as partially reflected mirrors
Mirror
Mirror
Fabry-Perot Etalon for Optical Feedback
L
Fabry-Perot
Index: n
0
2Ln
m
=
Only the fundamental longitudinal modes have high quality
factors (low loss) which can be utilized for laser modes
The mode number m is given by the number of half-wavelengths
Bandwidth
of
Gain Medium
Bandwidth
of
Laser
3
Fabry-Perot Etalon for Optical Feedback
Usually several longitudinal modes will coexist. (multiple modes)
L
Fabry-Perot
Index: n
2
0 0 0 0
2 2 dm Ln L dn
d d
= +
2
0
0
0
0
2 ( )
d
dn
L n
d
The mode spacing (free spectrum range) is determined by

The mode spacing d
0
is given by taking dm = -1
group index
Lasing Threshold Conditions (Threshold
Current)
For oscillation (lasing), the net gain of a single loop should be
equal to 1 (stationary Ps)
Loss is due to propagation loss (scattering, absorption) and
optical transmission through mirror
Gain is due to population inversion at the p-n junction
Gain Medium
Partially Reflected Mirror
Loss = Gain
4
Current)
Gain Medium
Power variation during propagation:
exp( )
s
d
P P g Z
D
=
Gain Loss
Transverse Spatial Energy Distribution in a
Diode Laser
D
d
L
The photon distribution extends or spread into the inactive
regions on each side of the junction (optical mode width)
The index is a little high in depletion region
only a fraction d/D remain in the active region and can generate
additional photons by stimulated emission
(gain)
(loss)
(loss)
5
Current)
To maintain the loop gain equal to 1,
exp( )
s s
d
P RP g L
D
=
1
ln
d
g L
R D

| |
=
|
\ .
or
where R is the reflectance. Thus,
1 1
ln
d
g
D L R
= +
Gain Medium
Current)
The gain coefficient g is related to the injected current density of
holes and electrons. It can be given by
2
0
2
8
q
J
g
en d

=
:
q
0
:
: n
:
: e
: d
: J
internal quantum efficiency
vacuum wavelength emitted
index of refraction at
0
linewidth of spontaneous emission
electron charge
thickness of active region
injected current density
2
0
2
1 1
ln
8
q th
J
en D L R

= +
Therefore, the threshold condition for lasing is

effective
gain per
pass
effective
loss per
pass
or
2
2
0
8 1 1
ln
th
q
en D
J
L R

| |
= +
|
\ .
6
Current)
2 3 4
1 1 1 1
ln ln
1
1
...
2 3 4
L R L T
T T T
T
L
| | | |
=
| |
\ . \ .
| |
= + +
|
\ .
1 1
ln
T
L R L
| |

|
\ .
The threshold current is that which is necessary to produce just enough
gain to overcome the losses
Note that, from the standpoint of threshold, the light output of laser at the
end faces must be counted as a loss.
T
L
+
Propagation loss
coefficient
T: transmittance
Output Laser Power and Efficiency
Reflectance: R
P
in, tot
P
out
P
out
P
in
The power provided by external injected current should be equal to
the emitting laser power as well as loss inside the cavity
P
loss
The ratio of the emitting power is defined by
1 1
ln
1 1
ln
L R
L R
=
+
7
Reflectance: R
P
in, tot
P
out
P
out
P
in
P
loss
( )
out in q
J
P P L W h
e

(
= =
(

( )
1 1
ln
1 1
ln
q
out
J
L R
P L W h
e
L R
=
+
The emitted power is then given by
which is,
(P
out
is power out of both end faces)
Reflectance: R
P
in, tot
P
out
P
out
P
in
P
loss
( )
( ) ( )
2
,
1 1
ln
1 1
ln
q
out
tot
in tot
series
J
L R
L W h
e
P
L R
J
P
L W h J L W R
e
+
= =
( +

The overall power efficiency including the effect of series resistance
in the devices is thus given by
8
Tunnel-Injection Laser
Diffusion
Current
Tunnelling
Current
No junction is required
Electrons are injected from low-work-function metal by diffusion
current
Holes are injected from high-work-function metal by tunnelling
current
Holes and Electrons are recombined in the semiconductor region
Tunnel-Injection Laser
Diffusion
Current
Tunnelling
Current
The tunnel-injected laser was one of the first of the confined-

field type lasers (such as heterojunction lasers)
The optical field is well confined in the semiconductor region
due to metal reflection. That is, D=d

Semiconductor Laser

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1

Ming-Chang Lee, Integrated Photonic Devices

The mode spacing (free spectrum range) is determined by

Therefore, the threshold condition for lasing is

The tunnel-injected laser was one of the first of the confined-

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