Vishay Siliconix

Si1470DH
Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
www.vishay.com
1
N-Channel 30 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET

Power MOSFET
100 % R
g
and UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() I
D
(A) Q
g
(Typ.)
30
0.066 at V
GS
= 4.5 V 4.0
a
4.85
0.095 at V
GS
= 2.5 V 4.0
Notes:
a. Based on T
C
= 25 C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
12
Continuous Drain Current (T
J
= 150 C)
a
T
C
= 25 C
I
D
5.1
A
T
C
= 70 C 4.0
T
A
= 25 C 3.8
b, c
T
A
= 70 C 3.1
b, c
Pulsed Drain Current

I
DM
12
Avalanche Current
L = 0.1 mH
I
AS
10
Repetitive Avalanche Energy E
AS
5 mJ
Continuous Source-Drain Diode Current
T
C
= 25 C
I
S
2.3
A
T
A
= 25 C 1.3
b, c
Maximum Power Dissipation
a

T
C
= 25 C
P
D
2.8
W
T
C
= 70 C 1.8
T
A
= 25 C 1.5
b, c
T
A
= 70 C 1.0
b, c
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150 C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, d
t 5 s R
thJA
60 80
C/W
Maximum Junction-to-Foot (Drain) Steady State R
thJF
34 45
Ordering Information: Si1470DH-T1-E3 (Lead (Pb)-free)
Si1470DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
AK XX
Lot Tracea b ility
and Date Code
Part # Code
Y

Y

SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top V ie w
D
D
G
D
D
S
N-Channel MOSFET
G
D
S
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Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
Vishay Siliconix
Si1470DH
Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 A 30 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 A
27.41
mV/C
V
GS(th)
Temperature Coefficient
V
GS(th)
/
- 3.83
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 A 0.6 1.6 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= 12 V 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V 1 nA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 C 10 A
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V 12 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 3.8 A 0.055 0.066

V
GS
= 2.5 V, I
D
= 3.1 A 0.079 0.095
Forward Transconductance g
fs
V
DS
= 15 V, I
D
= 3.8 A 11.2 S
Dynamic
b
Input Capacitance C
iss

V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
510
pF Output Capacitance C
oss
66
Reverse Transfer Capacitance C
rss
39
Total Gate Charge Q
g

V
DS
= 15 V, V
GS
= 5 V, I
D
= 3.8 A 5 7.5
nC
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 3.8 A
4.85 7.3
Gate-Source Charge Q
gs
1.35
Gate-Drain Charge Q
gd
1.26
Gate Resistance R
g
f = 1 MHz 7.3 10.95
Turn-On Delay Time t
d(on)

V
DD
= 15 V, R
L
= 5.0
I
D
3.0 A, V
GEN
= 4.5 V, R
g
= 1
9.0 15
ns
Rise Time t
r
51 77
Turn-Off DelayTime t
d(off)
18 27
Fall Time t
f
7.1 10.65
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current I
S
T
C
= 25 C 2.3
A
Pulse Diode Forward Current
a
I
SM
12
Body Diode Voltage V
SD
I
S
= 1.8 A 0.8 1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= 2.3 A, dI/dt = 100 A/s
11.5 17.25 nC
Body Diode Reverse Recovery Charge Q
rr
5.2 7.8
ns Reverse Recovery Fall Time t
a
7.7
Reverse Recovery Rise Time t
b
3.8
Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
www.vishay.com
3
Vishay Siliconix
Si1470DH
TYPICAL CHARACTERISTICS T
A
= 25 C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
3
6
9
12
0.0 0.5 1.0 1.5 2.0 2.5
V = 5 V thru 3 V
V = 2 V
V = 2.5 V
V = 1.5 V
GS
GS
GS
GS
V
DS
- Drain-to-Source Voltage (V)
-

D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
I
D
0
0.03
0.06
0.09
0.12
0.15
0 3 6 9 12
V
GS
= 4.5 V
V
GS
= 2.5 V
-

O
n
-
R
e
s
i
s
t
a
n
c
e
(

)
R
D
S
(
o
n
)
I
D
- Drain Current (A)
0
1
2
3
4
5
0 2 4 6
I
D
= 3.7 A
V
DS
= 15 V
V
DS
= 24 V
-

G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
Q
g
- Total Gate Charge (nC)
V
G
S
Transfer Characteristics Curves vs. Temperature
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.5 1.0 1.5 2.0 2.5
T
C
= - 55 C
V
GS
- Gate-to-Source Voltage (V)
-

D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
I
D
T
C
= 25 C
T
C
= 125 C
C
rss
0
200
400
600
800
0 6 12 18 24 30
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C

-

C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 2.5 V
I
D
= 3.7 A, 4.1 A
I
D
= 3.1 A
T
J
- Junction Temperature (C)
(
N
o
r
m
a
l
i
z
e
d
)
-

O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
o
n
)
V
GS
= 4.5 V
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Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
Vishay Siliconix
Si1470DH
TYPICAL CHARACTERISTICS T
A
= 25 C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.01
1
10
1.0
0.1
0 0.2 0.4 0.6 0.8 1.2
T = 150 C
J
T = 25 C
J
V
SD
- Source-to-Drain Voltage (V)
-

S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
I
S
0.5
0.7
0.9
1.1
1.3
1.5
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 A
T
J
- Temperature (C)
V
)
h
t
(
S
G
)
V
(

R
DS(on)
vs. V
GS
vs. Temperature
Single Pulse Power
0.00
0.04
0.08
0.12
0.16
0 1 2 3 4 5
V
GS
- Gate-to-Source Voltage (V)
R
)
n
o
(
S
D
(

e
c
n
a
t
s
i
s
e
R
-
n
O

e
c
r
u
o
S
-
o
t
-
n
i
a
r
D

-
)
T
A
= 25 C
T
A
= 125 C
I
D
= 3.7 A
0
20
30
5
15
)
W
(


r

e

w

o

P

Time (s)
25
1 600 100 0.001 0.1 10 0.01
10
Safe Operating Area, Junction-to-Ambient
100
0.001
10
0.01
0.1 100 10 1
0.1
1
T
A
= 25 C
Single Pulse
Limited by R
DS(on)
*
10 ms
100 ms
1 s
10 s
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specifed
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
I
D
Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
www.vishay.com
5
Vishay Siliconix
Si1470DH
TYPICAL CHARACTERISTICS T
A
= 25 C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
0 25 50 75 100 125 150
5
3
1
Package Limited
T
C
- Case Temperature (C)
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Power Derating
0.0
0.6
1.2
1.8
2.4
3.0
3.6
0 25 50 75 100 125 150
T
C
- Case Temperature (C)
)
W
(


r

e

w

o

P

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6
Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
Vishay Siliconix
Si1470DH
TYPICAL CHARACTERISTICS T
A
= 25 C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74277.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 600 10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t

n

e

i

s

n

a

r

T



e

v

i

t

c

e

f

f

E



d

e

z

i

l

a

m

r

o

N

e

c

n

a

d

e

p

m

I



l

a

m

r

e

h

T

1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100 C/W

3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
1 10 10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t

n

e

i

s

n

a

r

T



e

v

i

t

c

e

f

f

E



d

e

z

i

l

a

m

r

o

N

e

c

n

a

d

e

p

m

I



l

a

m

r

e

h

T


Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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