4N25(G)V/ 4N35(G)V Series

Vishay Telefunken

Optocoupler with Phototransistor Output

Description
The 4N25(G)V/ 4N35(G)V series consists of a phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.

Applications
14827

Circuits for safe protective separation against

electrical shock according to safety class II
(reinforced isolation):

D For appl. class I IV at mains voltage 300 V

D For appl. class I III at mains voltage 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.

B
6

C
5

E
4

These couplers perform safety functions according

to the following equipment standards:

D VDE 0884

95 10805

VDE Standards
1
2
A (+) C ()

3
n.c.

Optocoupler for electrical safety requirements

D IEC 950/EN 60950

Office machines (applied for reinforced isolation
for mains voltage 400 VRMS)

D VDE 0804
Telecommunication
processing

apparatus

and

data

D IEC 65
Safety for mains-operated electronic and related
household apparatus

Order Instruction
Ordering Code
CTR Ranking
4N25V/ 4N25GV1)
>20%
4N35V/ 4N35GV1)
>100%
1) G = Leadform 10.16 mm; G is not market on the body

86

Remarks

Rev. A4, 11Jan99

4N25(G)V/ 4N35(G)V Series

Vishay Telefunken
Features
Approvals:

D BSI: BS EN 41003, BS EN 60095 (BS 415),

BS EN 60950 (BS 7002),
Certificate number 7081 and 7402

D Rated recurring peak voltage (repetitive)

VIORM = 600 VRMS

D Creepage current resistance according to

VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D Thickness through insulation 0.75 mm

D FIMKO (SETI): EN 60950,

Certificate number 12399

D Underwriters Laboratory (UL) 1577 recognized,

file number E-76222

General features:

D Isolation materials according to UL94-VO

D Pollution degree 2

D VDE 0884, Certificate number 94778

VDE 0884 related features:

(DIN/VDE 0110 part 1 resp. IEC 664)

D Rated impulse voltage (transient overvoltage)

VIOTM = 6 kV peak
D Isolation test voltage
(partial discharge test voltage) Vpd = 1.6 kV
D Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)

D Climatic classification 55/100/21 (IEC 68 part 1)

D Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D Low temperature coefficient of CTR
D Coupling System A

Absolute Maximum Ratings

Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature

Test Conditions

tp 10 ms
Tamb 25C

Symbol
VR
IF
IFSM
PV
Tj

Value
5
60
3
100
125

Unit
V
mA
A
mW
C

Symbol
VCEO
VCEO
IC
ICM
PV
Tj

Value
32
7
50
100
150
125

Unit
V
V
mA
mA
mW
C

Symbol
VIO
Ptot
Tamb
Tstg
Tsd

Value
3.75
250
55 to +100
55 to +125
260

Unit
kV
mW
C
C
C

Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature

Test Conditions

tp/T = 0.5, tp 10 ms
Tamb 25C

Coupler
Parameter
Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature

Rev. A4, 11Jan99

Test Conditions
t = 1 min
Tamb 25C

2 mm from case, t 10 s

87

4N25(G)V/ 4N35(G)V Series

Vishay Telefunken
Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance

Test Conditions
IF = 50 mA
Tamb = 100C
VR = 0, f = 1 MHz

Symbol
VF

Min.

Test Conditions
IC = 1 mA
IE = 100 mA
VCE = 10 V, IF = 0,
Tamb = 100C
VCE = 30 V, IF = 0,
Tamb = 100C

Symbol
VCEO
VECO
ICEO

Test Conditions
IF = 50 mA, IC = 2 mA

Symbol
VCEsat

VCE = 5 V, IF = 10 mA,
RL = 100 W
f = 1 MHz

fc

110

kHz

Ck

pF

Cj

Typ.
1.2

Max.
1.4

50

Unit
V
pF

Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector emitter cut-off
current

Min.
32
7

Typ.

ICEO

Max.

50

Unit
V
V
nA

500

mA

Max.
0.3

Unit
V

Coupler
Parameter
Collector emitter
saturation voltage
Cut-off frequency
Coupling capacitance

Min.

Typ.

Current Transfer Ratio (CTR)

Parameter
IC/IF

88

Test Conditions
VCE = 10 V, IF = 10 mA

Type
4N25(G)V
4N35(G)V
VCE = 10 V, IF = 10 mA, 4N35(G)V
Tamb = 100C

Symbol
CTR
CTR
CTR

Min.
0.20
1.00
0.40

Typ.
1
1.5

Max.

Unit

Rev. A4, 11Jan99

4N25(G)V/ 4N35(G)V Series

Vishay Telefunken
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.

Input (Emitter)
Parameters
Forward current

Test Conditions

Symbol
Isi

Value
130

Unit
mA

Test Conditions
Tamb 25C

Symbol
Psi

Value
265

Unit
mW

Test Conditions

Symbol
VIOTM
Tsi

Value
6
150

Unit
kV

Output (Detector)
Parameters
Power dissipation

Coupler
Parameters
Rated impulse voltage
Safety temperature

Insulation Rated Parameters (according to VDE 0884)

Parameter
Test Conditions
Partial discharge test voltage 100%, ttest = 1 s
Routine test
Partial discharge
g test voltage
g tTr = 60 s, ttest = 10 s,
Lot test (sample test)
(see figure 2)
Insulation resistance

VIO = 500 V
VIO = 500 V,
Tamb = 100C
VIO = 500 V,
Tamb = 150C

Symbol
Vpd

Min.
1.6

VIOTM
Vpd
RIO
RIO

6
1.3
1012
1011

RIO

109

Typ.

Max.

Unit
kV
kV
kV

W
W
W

VIOTM

300
V

t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s

Phototransistor
Psi ( mW )

250
200

VPd

150

VIOWM
VIORM

100
IR-Diode
Isi ( mA )

50

tot

Total Power Dissipation ( mW )

(construction test only)

t3 ttest t4

0
0
94 9182

25

50

75

100

125

Tsi Safety Temperature ( C )

Figure 1. Derating diagram

Rev. A4, 11Jan99

150

t1
13930

tTr = 60 s

t2

tstres
t

Figure 2. Test pulse diagram for sample test according to

DIN VDE 0884

89

4N25(G)V/ 4N35(G)V Series

Vishay Telefunken
Switching Characteristics of 4N25(G)V
Parameter
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time

Test Conditions
VS = 5 V, IC = 5 mA, RL = 100 W ((see figure
g
3))

VS = 5 V, IF = 10 mA, RL = 1 kW ((see figure

g
4))

Symbol
td
tr
tf
ts
ton
toff
ton
toff

Typ.
4.0
7.0
6.7
0.3
11.0
7.0
25.0
42.5

Unit
ms
ms
ms
ms
ms
ms
ms
ms

Symbol
td
tr
tf
ts
ton
toff
ton
toff

Typ.
2.5
3.0
4.2
0.3
<10.0
<10.0
9.0
25.0

Unit
ms
ms
ms
ms
ms
ms
ms
ms

Switching Characteristics of 4N35(G)V

Parameter
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
IF

Test Conditions
VS = 5 V, IC = 2 mA, RL = 100 W ((see figure
g
3))

VS = 5 V, IF = 10 mA, RL = 1 kW ((see figure

4))
g

IF

+5V

IC = 5 mA/ 2 mA;
Adjusted through
input amplitude

RG = 50 W
tp
0.01
T

tp = 50 ms

96 11698

IF
0

Channel I
50 W

100 W

Channel II

tp
Oscilloscope
RL 1 M W
CL 20 pF

IC
100%
90%

14950

Figure 3. Test circuit, non-saturated operation

IF
0

IF = 10 mA

10%
0

IC

RG = 50 W
tp
T

+5V

+ 0.01

td

tp = 50 ms

ts

ton
Channel I
50 W

1 kW

Channel II

Oscilloscope
RL 1 M W
CL 20 pF

95 10844

Figure 4. Test circuit, saturated operation

90

tr

tp
tion
td
tr
ton (= td + tr)

tf
toff

pulse duradelay time

rise time
turn-on time

ts
tf
toff (= ts + tf)

storage time
fall time
turn-off time

Figure 5. Switching times

Rev. A4, 11Jan99

4N25(G)V/ 4N35(G)V Series

Vishay Telefunken
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
10000
Coupled device
250

ICEO Collector Dark Current,

with open Base ( nA )

P tot Total Power Dissipation ( mW )

300

200
Phototransistor
150
IR-diode
100
50

VCE=10V
IF=0
1000

100

10

1
0

40

80

120

Tamb Ambient Temperature (

C )

96 11700

0
96 11875

Figure 6. Total Power Dissipation vs.

Ambient Temperature

I CB Collector Base Current ( mA )

I F Forward Current ( mA )

1.000

100.0

10.0

1.0

0.1
VF Forward Voltage ( V )

CTR rel Relative Current Transfer Ratio

Figure 7. Forward Current vs. Forward Voltage

VCE=10V
IF=10mA

1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
30 20 10 0 10 20 30 40 50 60 70 80

96 11874

0.100

0.010

96 11876

10

100

IF Forward Current ( mA )

Figure 10. Collector Base Current vs. Forward Current

100.00

1.5
1.3

VCB=10V

0.001
1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Tamb Ambient Temperature ( C

)

Figure 8. Relative Current Transfer Ratio vs.

Ambient Temperature

Rev. A4, 11Jan99

VCE=10V
IC Collector Current ( mA )

1.4

Tamb Ambient Temperature ( C

)

Figure 9. Collector Dark Current vs.

Ambient Temperature

1000.0

96 11862

10 20 30 40 50 60 70 80 90 100

10.00

1.00

0.10

0.01
0.1
96 11904

1.0

10.0

100.0

IF Forward Current ( mA )

Figure 11. Collector Current vs. Forward Current

91

4N25(G)V/ 4N35(G)V Series

Vishay Telefunken
1000

IC Collector Current ( mA )

IF=50mA

CTR Current Transfer Ratio ( % )

100.0
20mA

10.0

10mA
5mA

1.0

2mA
1mA

0.1
0.1

10.0

VCE Collector Emitter Voltage ( V

)

0.8
20%
0.6
CTR=50%
0.4
0.2
10%

100

10

IF Forward Current ( mA )

Figure 15. Current Transfer Ratio vs. Forward Current

t on / t off Turn on / Turn off Time ( m s )

VCEsat Collector Emitter Saturation Voltage ( V )

0.1
95 10976

1.0

50
Saturated Operation
VS=5V
RL=1kW

40

30
toff
20
10
ton

0
1

100

10
IC Collector Current ( mA )

95 10972

800
VCE=10V
600
5V
400
200

10

20

15

IF Forward Current ( mA )

Figure 16. Turn on / off Time vs. Forward Current

t on / t off Turn on / Turn off Time ( m s )

1000

0
0.01

0
95 10974

Figure 13. Collector Emitter Saturation Voltage vs.

Collector Current

95 10973

10

100.0

Figure 12. Collector Current vs. Collector Emitter Voltage

hFE DC Current Gain

100

1
1.0

96 11905

20
Non Saturated
Operation
VS=10V
RL=100W

15
toff
10
ton
5

0
0.1

10

100

IC Collector Current ( mA )

Figure 14. DC Current Gain vs. Collector Current

92

VCE=20V

0
95 10975

10

IC Collector Current ( mA )

Figure 17. Turn on / off Time vs. Collector Current

Rev. A4, 11Jan99

4N25(G)V/ 4N35(G)V Series

Vishay Telefunken
Type

Date
Code
(YM)

XXXXXX
918 A TK 63
0884
V
D E

Production
Location
Safety
Logo
15090

Coupling
System
Indicator

Company
Logo

Figure 18. Marking example

Dimensions of 4N25G/ 4N35G in mm

weight: ca. 0.50 g

creepage distance:
air path: 8 mm

y 8 mm

after mounting on PC board

14771

Rev. A4, 11Jan99

93

4N25(G)V/ 4N35(G)V Series

Vishay Telefunken
Dimensions of 4N25/ 4N35 in mm

weight: 0.50 g
creepage distance:
air path: 6 mm

y 6 mm

after mounting on PC board

14770

94

Rev. A4, 11Jan99

This datasheet has been downloaded from:

www.EEworld.com.cn

Free Download
Daily Updated Database
100% Free Datasheet Search Site
100% Free IC Replacement Search Site
Convenient Electronic Dictionary
Fast Search System
www.EEworld.com.cn

All Datasheets Cannot Be Modified Without Permission

Copyright Each Manufacturing Company