PGC SYLLABUS DEPLOYMENT DATE: 09 JULY, 2014

Name of Fac!"#: $ % P%AJAPAT Co!!e&e: P'ET De("): ECE

Name of S*+ec" ,-". Co/e: 0EC4 B1a2c.: ECE C!a33: 4'' 3em
S. NO.
TOPIC AS PER BLOWNUP
SYLLABUS
LECT. NO.
PLANNED
DAT
E
ACTUAL DEL.
DATE
REASON FOR
DEVIATI
ON
REF. / TEXT
BO
OK
WIT
H
PAG
E
NO.
&
WE
BSI
TE
5e1o Lec"1e
'NT%ODUCT'ON
Introduction to subject
Basic knowledge about
Subject
CONCLUS'ON
UN'T61
Introduction to
technologies
'2"1o/c"-o2
1.1Semiconductor substrate
And crystal defects
1.1.1 Introduction to
crystal structure
crystal axes and
planes
1.1.2 !S preparation
Conclusion
'2"1o/c"-o2
1.2. !S"electronic
grade silicon#
1.2.1 lectronic !rade
silicon
1.2.2 $echanism
Co2c!3-o2
'2"1o/c"-o2
1.1.% &rystal defects
1.1.%.1 Area defects
1.1.%.2 'ine defects
1.1.%.% (olume defects
1.1.%.) *oint defects
Co2c!3-o2
'2"1o/c"-o2
1.% &+echrolaski !rowth
1.%.1. &rystal growth theory
1.%.2 &rystal growing
practice
1.%.% &rystal growth
mechanism
1.%.) &rystal pulling
mechanism
Co2c!3-o2
'2"1o/c"-o2
',
'1
'2
'%
')
1.) -loat .one growth
1.).1 -loat +one
mechanism
1.).2 *ush rate
1.).% *ull rate
1.).) !rowth rate
Co2c!3-o2
'2"1o/c"-o2
1./ &haracteri+ation and
e0aluation of crystals
1./.1 1ow to e0aluate
crystals
1./.2 &haracteri+ation
1./.% 0aluation
Co2c!3-o2
'2"1o/c"-o2
1.2 3afer *reparation
1.2.1 3afer cutting
1.2.2 Solidifying
1.2.% *reparation
mechanism
Co2c!3-o2
'2"1o/c"-o2
1.4 Silicon shaping
1.4.1 Shaping operations
1.4.2 Apparatus
1.4.% 3orking
1.5 tching and *olishing
1.5.1 tching mechanism
1.5.1.1 6ry 7 3et tching
1.5.2 *olishing theory
1.5.% Apparatus
Co2c!3-o2
'2"1o/c"-o2
1.8 &hemical cleaning
1.8.1 &leaning theory of
mechanism
1.8.2 Apparatus
Co2c!3-o2
Co2c!3-o2 Of U2-"61
UN'T6''
6I--9SI:; A;6 I:;
I$*'A;<A<I:;
'2"1o/c"-o2
'/
'2
'4
'5
'8
2.1 -lick=s diffusion
e>uation in 1?d
2.1.1 -lick=s diffusion
e>uation in 1?d
2.1.1.1 -lick=s e>uation
deri0ation
2.1.1.2 &onstant
diffusi0ities
2.1.1.% &oncentration
dependent diffusi0ities
2.1.1.% <emperature
dependence of diffusi0ities
Co2c!3-o2
'2"1o/c"-o2
2.1.2 *roof of flick=s law
2.1.% Solution of flick=s
e>uation
Co2c!3-o2
'2"1o/c"-o2
2.2 Atomic model
2.2.1 Atomic model
discussion
2.2.2 Atomic diffusion
mechanisms
Co2c!3-o2
'2"1o/c"-o2
2.% Analytic solution of
flick=s law
2.%.1 <o sol0e flick=s
diffusion solution
2.%.2 Analytic solution
2.) &orrection to simple
theory
2.).1 6emerits of simple
theory
2.).2 @esol0ing of demerits
Co2c!3-o2
'2"1o/c"-o2
2./ 6iffusion in Si:2
2./.1 6iffusion phenomena
2./.2 6iffusion mechanism
2./.% 6iffusion e>uation
Co2c!3-o2
'2"1o/c"-o2
2.2 Ion Implantation
e>uation
'1,
'11
'12
'1%
'1)
'1/
2.2.1 Introduction
2.2.2 @ange theory
2.2.2.1 Ion stopping
2.2.2.2 @ange distribution
Co2c!3-o2
'2"1o/c"-o2
2.2.2.% 6amage
2.2.2.) &hanneling
Co2c!3-o2
'2"1o/c"-o2
2.4 Ion implantation
systems
2.4.1 Implantation
e>uipment
2.4.2 Annealing
2.4.2.1 -urnace annealing
Co2c!3-o2
'2"1o/c"-o2
2.4.2.2 @apid thermal
annealing
2.4.% Shallow junctions
Co2c!3-o2
'2"1o/c"-o2
2.5 :xidation
2.5.1 Introduction
2.5.2 Silicon oxidation
methods
2.5.% <hin oxides
Co2c!3-o2
'2"1o/c"-o2
2.5.%.1 !rowth techni>ues
2.5.%.2 <hin oxide properties
Co2c!3-o2
'2"1o/c"-o2
2.5.) :xidation techni>ues
and system
2.5.).1 *re oxidation
cleaning
2.5.).2 6ry and wet
oxidation
Co2c!3-o2
'2"1o/c"-o2
2.5.).% *lasma oxidation
2.5./ :xide properties
'12
'14
'15
'18
'2,
'21
'22
Co2c!3-o2
'2"1o/c"-o2
2.8 !rowth $echanism
2.8.1 Silicon growth theory
2.8.2 :perational
mechanisms
Co2c!3-o2
'2"1o/c"-o2
2.1, 6eal !roo0e $odel of
:xidation
2.1,.1 6iscussion of 6eal
!ro0e model
2.1,.2 Analytic solution of
6eal !ro0e model
2.1,.% :xidation through
6eal !ro0e model
Co2c!3-o2
'2"1o/c"-o2
2.11 'inear and *arabolic
rate coefficients
2.11.1 'inear rate
coefficient
2.11.2 *arabolic coefficient
2.11.% &omparison between
the two
Co2c!3-o2
'2"1o/c"-o2
2.12 Structure of Si:2
2.12.1 Si:2 structure
2.12.2 9se of Si:2 in I&
fabrication
Co2c!3-o2
Co2c!3-o2 Of U2-"62
UN'T67
&1$I&A' (A*:9@
6*:SI<I:; A;6
&@AS<A' !@:3<1
'2"1o/c"-o2 Of
U2-"67
'2"1o/c"-o2
%.1 &(6 for deposition of
'2%
'2)
'2/
'22
dielectric and polysilicon
%.1.1 &(6 apparatus and
mechanism
%.1.2 3orking principle
%.1.% $erits and demerits
Co2c!3-o2
'NTE%NAL SPL
'2"1o/c"-o2
%.2 A simple &(6 system
%.2.1 Study of &(6 system
%.2.2 &(6 e>uation
Co2c!3-o2
'2"1o/c"-o2
%.% chemical e>uilibrium
%.%.1 >uilibrium
deri0ation
%.%.2 *roof of e>uilibrium
%.) $ass action law
%.).1 6eri0ation of mass
action law
Co2c!3-o2
'2"1o/c"-o2
%./ Introduction to
atmospheric &(6 of
dielectric
%./.1 Introduction
%./.2 $etalli+ation
applications
%./.2.1 !ates and
interconnection
%./.2.2 :hmic contacts
%./.2.% :ther applications
%./.% $etalli+ation choices
%./.%.1 $etals or alloys
%./.%.2 *roperties
%./.%.% 6eposition methods
Co2c!3-o2
'2"1o/c"-o2
%.2 'ow pressure &(6 of
dielectric and semiconductor
%.2.1 'ow pressure &(6
%.2.2 '*&(6 for
semiconductors
%.2.% Auto 6oping
Co2c!3-o2
E8TE%NAL SPL
'24
'25
'28
'%,
'%1
'%2
'2"1o/c"-o2
%.4 pitaxial (* "(apour
*hase pitaxy#
%.4.1 Study of epitaxial
(*
%.4.2 pitaxial mechanism
%.4.% $erits and 6emerits
Co2c!3-o2
'2"1o/c"-o2
%.5 6efects in epitaxial
growth
%.5.1 6efects in growth
mechanism
%.5.2 @emo0al of defects
%.8 $etal organic &(6
%.8.1 $:&(6 study
Co2c!3-o2
'2"1o/c"-o2
%.1, $olecular beam
epitaxy
%.1,.1 Study of $B
%.1,.2 SourcesB growth
chamber
%.1,.% 3orking principle
%.1,.) *roof
%.1,./ $erits and demerits
Co2c!3-o2
Co2c!3-o2 Of U2-"67
UN'T64
*A<<@; <@A;S-@
'2"1o/c"-o2 Of
U2-"64
'2"1o/c"-o2
).1 Introduction to
photoCoptical
lithography
).1.1 'ithography process
).1.2 :ptical resists
).1.% $echanism
Co2c!3-o2
'2"1o/c"-o2
).2 &ontact proximity
printers
).2.1 Study of printers
).2.2 &ontact printers
).2.% *rojection printers
'%%
'%)
'%/
'%2
'%4
'%5
).2.) 3orking principle
).% *rojection printers
).%.1 $erits and demerits
of printers
).%.2 Applications
Co2c!3-o2
'2"1o/c"-o2
).) $ask generation
).).1 $ask generation
phenomena
).).2 Steps for $ask
generation
)./ *hotoresists
)./.1 <ypes of photoresists
)./.2 Study of photoresists
Co2c!3-o2
'2"1o/c"-o2
).2 3et tching
).2.1 3et etching
phenomena
).4 *lasma tching
).4.1 <ypes of plasma
etching
Co2c!3-o2
'2"1o/c"-o2
).4.2 Study of etching
).5.1 tching process
).5.2 3orking
).5.% $erits and demerits
Co2c!3-o2
Co2c!3-o2 Of U2-"64
OPEN BOO$ TEST
UN'T69
4LS' P%OCESS
'NTEG%AT'ON
'2"1o/c"-o2 Of
U2-"69
'2"1o/c"-o2
/.1 Dunction and oxide
isolation
/.1.1 Isolation process
/.1.2 $echanism
/.1.% 3orking principle
Co2c!3-o2
'%8
'),
')1
')2
')%
'2"1o/c"-o2
/.2 'ocos methods
/.2.1 'ocus method study
/.2.2 $erits and demerits
Co2c!3-o2
'2"1o/c"-o2
/.% <rench Isolation
/.%.1 3orking principle
/.%.2 $erits and demerits
Co2c!3-o2
'2"1o/c"-o2
/.) Silicon :n
Insulator"S:I#
/.).1 Introduction
/.).2 $echanism
Co2c!3-o2
'2"1o/c"-o2
/./ $etalli+ation
/./.1 Introduction
/./.2 $etalli+ation
applications
/./.2.1 !ates and
interconnection
/./.2.2 :hmic contacts
/./.2.% :ther applications
Co2c!3-o2
'2"1o/c"-o2
/./.% $etalli+ation choices
/./.%.1 $etals or alloys
/./.%.2 *roperties
/./.%.% 6eposition methods
/./.%.)$ulti le0el
metalli+ation
/./.%./ parameters of
multile0el metalli+ation
Co2c!3-o2
'2"1o/c"-o2
/.2 *lanari+ation
/.2.1 *rocess and
mechanism
/.2.2 *roperties
/.2.% *roblems pertaining
Co2c!3-o2
:U'5
'2"1o/c"-o2
/.4 -undamental
consideration for I&
'))
')/
')2
')4
')5
')8
'/,
'/1
technology
/.4.1 Building indi0idual
layers
/.4.2 Integrating the
process steps
/.4.% $iniaturi+ing ('SI
circuits
Co2c!3-o2
'2"1o/c"-o2
/.5 ;$:S I& <echnology
/.5.1 -abrication process
se>uence
/.5.2 Special considerations
/.8 &$:S I& <echnology
/.8.1 -abrication process
se>uence
/.8.2 Special
considerations
Co2c!3-o2
'2"1o/c"-o2
/.1, Bipolar I& <echnology
/.1,.1 -abrication process
se>uence
Co2c!3-o2
Co2c!3-o2 Of U2-"69
%E4'S'ON
'/2
'/%
'/)