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Code No: 53009 Set No. 1
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, September 2011
ELECTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No.
A

Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.

I Choose the correct alternative:

1. What is the order of doping, from heavily to lightly doped, for each region? [ ]
A) base, collector, emitter B) emitter, collector, base
C) emitter, base, collector D) collector, emitter, base

2. The voltage where large current starts to flow in a reverse biased p-n junction diode is [ ]
A) breakdown voltage B) barrier potential C) biasing voltage D) offset voltage

3. The area at the junction of p-type and n-type materials that has lost its majority carriers is called
the [ ]
A) n- region B) p- region C) breakdown region D) depletion region

4. The peak inverse voltage (PIV) across a non-conducting diode in a bridge rectifier is equal to
[ ]
A) half the peak secondary voltage B) twice the peak secondary voltage
C) the peak secondary voltage D) four time peak secondary voltage

5. The choke filters are not used now a days as they are [ ]
A) bulky B) costlier C) consume more power D) all of the above

6. The ripple factor of which filter increase with decrease in load resistance. [ ]
A) C filter B) LC-filter C) Inductor filter D) both b and c

7. What is the ratio of I
C
to I
E
? [ ]
A)
dc
B)
dc
/ (
dc
+1) C)
dc
D) both b and c

8. Which transistor bias circuit arrangement has poor stability [ ]
A) collector-feedback bias B) voltage-divider bias C) fixed bias D) emitter bias

9. At saturation, the value of V
CE
is nearly ________, and I
C
=________. [ ]
A) zero, zero B) V
CC
, I
C(sat)
C) zero, I
(sat)
D) V
CC
, zero

10. Changes in
dc
results in changes in [ ]
A) I
C
B) V
CE
C) the Q-point D) all of the above
Cont2

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Code No:53009 :2: Set No. 1



II Fill in the blanks

11. The ripple factor of the inductor filter ____________ with decrease in load resistance.

12. The Depletion layer capacitance is the capacitance associated with ____________________
p-n junction diode.

13. The depletion region penetrates more into the _____________________ region.

14. Zener diode is designed to be operated in the ______________________ condition.

15. The maximum efficiency of a full wave rectifier is ___________________.

16. To bias the transistor in saturation region, the emitter-base junction is ___________ biased and
the collector-base junction is _____________ biased.

17. In common-base configuration of a transistor, when the reverse bias voltage is increased, the
width of the depletion region also increases. This is called _____________________.

18. ____________________ configuration is widely used amongst three transistor configurations.

19. Ideally, stability factor should be ____________ to keep operating point stable.

20. The excess heat produced at the collector base junction due to self heating may even burn and
destroy the transistor. This is called ______________________ of the transistor.





-oOo-




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Code No: 53009 Set No. 2
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, September 2011
ELECTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No.
A

Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.

I Choose the correct alternative:

1. The peak inverse voltage (PIV) across a non-conducting diode in a bridge rectifier is equal to
[ ]
A) half the peak secondary voltage B) twice the peak secondary voltage
C) the peak secondary voltage D) four time peak secondary voltage

2. The choke filters are not used now a days as they are [ ]
A) bulky B) costlier C) consume more power D) all of the above

3. The ripple factor of which filter increase with decrease in load resistance. [ ]
A) C filter B) LC-filter C) Inductor filter D) both b and c

4. What is the ratio of I
C
to I
E
? [ ]
A)
dc
B)
dc
/ (
dc
+1) C)
dc
D) both b and c

5. Which transistor bias circuit arrangement has poor stability [ ]
A) collector-feedback bias B) voltage-divider bias C) fixed bias D) emitter bias

6. At saturation, the value of V
CE
is nearly ________, and I
C
=________. [ ]
A) zero, zero B) V
CC
, I
C(sat)
C) zero, I
(sat)
D) V
CC
, zero

7. Changes in
dc
results in changes in [ ]
A) I
C
B) V
CE
C) the Q-point D) all of the above


8. What is the order of doping, from heavily to lightly doped, for each region? [ ]
A) base, collector, emitter B) emitter, collector, base
C) emitter, base, collector D) collector, emitter, base

9. The voltage where large current starts to flow in a reverse biased p-n junction diode is [ ]
A) breakdown voltage B) barrier potential C) biasing voltage D) offset voltage

10. The area at the junction of p-type and n-type materials that has lost its majority carriers is called
the [ ]
A) n- region B) p- region C) breakdown region D) depletion region

Cont2

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Code No:53009 :2: Set No. 2



II Fill in the blanks

11. Zener diode is designed to be operated in the ______________________ condition.

12. The maximum efficiency of a full wave rectifier is ___________________.

13. To bias the transistor in saturation region, the emitter-base junction is ___________ biased and
the collector-base junction is _____________ biased.

14. In common-base configuration of a transistor, when the reverse bias voltage is increased, the
width of the depletion region also increases. This is called _____________________.

15. ____________________ configuration is widely used amongst three transistor configurations.

16. Ideally, stability factor should be ____________ to keep operating point stable.

17. The excess heat produced at the collector base junction due to self heating may even burn and
destroy the transistor. This is called ______________________ of the transistor.

18. The ripple factor of the inductor filter ____________ with decrease in load resistance.

19. The Depletion layer capacitance is the capacitance associated with ____________________
p-n junction diode.

20. The depletion region penetrates more into the _____________________ region.






-oOo-

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Code No: 53009 Set No. 3
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, September 2011
ELECTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No.
A

Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.

I Choose the correct alternative:

1. The ripple factor of which filter increase with decrease in load resistance. [ ]
A) C filter B) LC-filter C) Inductor filter D) both b and c

2. What is the ratio of I
C
to I
E
? [ ]
A)
dc
B)
dc
/ (
dc
+1) C)
dc
D) both b and c

3. Which transistor bias circuit arrangement has poor stability [ ]
A) collector-feedback bias B) voltage-divider bias C) fixed bias D) emitter bias

4. At saturation, the value of V
CE
is nearly ________, and I
C
=________. [ ]
A) zero, zero B) V
CC
, I
C(sat)
C) zero, I
(sat)
D) V
CC
, zero

5. Changes in
dc
results in changes in [ ]
A) I
C
B) V
CE
C) the Q-point D) all of the above

6. What is the order of doping, from heavily to lightly doped, for each region? [ ]
A) base, collector, emitter B) emitter, collector, base
C) emitter, base, collector D) collector, emitter, base

7. The voltage where large current starts to flow in a reverse biased p-n junction diode is [ ]
A) breakdown voltage B) barrier potential C) biasing voltage D) offset voltage

8. The area at the junction of p-type and n-type materials that has lost its majority carriers is called
the [ ]
A) n- region B) p- region C) breakdown region D) depletion region

9. The peak inverse voltage (PIV) across a non-conducting diode in a bridge rectifier is equal to
[ ]
A) half the peak secondary voltage B) twice the peak secondary voltage
C) the peak secondary voltage D) four time peak secondary voltage

10. The choke filters are not used now a days as they are [ ]
A) bulky B) costlier C) consume more power D) all of the above

Cont2

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Code No:53009 :2: Set No. 3



II Fill in the blanks

11. To bias the transistor in saturation region, the emitter-base junction is ___________ biased and
the collector-base junction is _____________ biased.

12. In common-base configuration of a transistor, when the reverse bias voltage is increased, the
width of the depletion region also increases. This is called _____________________.

13. ____________________ configuration is widely used amongst three transistor configurations.

14. Ideally, stability factor should be ____________ to keep operating point stable.

15. The excess heat produced at the collector base junction due to self heating may even burn and
destroy the transistor. This is called ______________________ of the transistor.

16. The ripple factor of the inductor filter ____________ with decrease in load resistance.

17. The Depletion layer capacitance is the capacitance associated with ____________________
p-n junction diode.

18. The depletion region penetrates more into the _____________________ region.

19. Zener diode is designed to be operated in the ______________________ condition.

20. The maximum efficiency of a full wave rectifier is ___________________.






-oOo-

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Code No: 53009 Set No. 4
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, September 2011
ELECTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No.
A

Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.

I Choose the correct alternative:

1. Which transistor bias circuit arrangement has poor stability [ ]
A) collector-feedback bias B) voltage-divider bias C) fixed bias D) emitter bias

2. At saturation, the value of V
CE
is nearly ________, and I
C
=________. [ ]
A) zero, zero B) V
CC
, I
C(sat)
C) zero, I
(sat)
D) V
CC
, zero

3. Changes in
dc
results in changes in [ ]
A) I
C
B) V
CE
C) the Q-point D) all of the above

4. What is the order of doping, from heavily to lightly doped, for each region? [ ]
A) base, collector, emitter B) emitter, collector, base
C) emitter, base, collector D) collector, emitter, base

5. The voltage where large current starts to flow in a reverse biased p-n junction diode is [ ]
A) breakdown voltage B) barrier potential C) biasing voltage D) offset voltage

6. The area at the junction of p-type and n-type materials that has lost its majority carriers is called
the [ ]
A) n- region B) p- region C) breakdown region D) depletion region

7. The peak inverse voltage (PIV) across a non-conducting diode in a bridge rectifier is equal to
[ ]
A) half the peak secondary voltage B) twice the peak secondary voltage
C) the peak secondary voltage D) four time peak secondary voltage

8. The choke filters are not used now a days as they are [ ]
A) bulky B) costlier C) consume more power D) all of the above

9. The ripple factor of which filter increase with decrease in load resistance. [ ]
A) C filter B) LC-filter C) Inductor filter D) both b and c

10. What is the ratio of I
C
to I
E
? [ ]
A)
dc
B)
dc
/ (
dc
+1) C)
dc
D) both b and c

Cont2

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Code No:53009 :2: Set No. 4



II Fill in the blanks:

11. ____________________ configuration is widely used amongst three transistor configurations.

12. Ideally, stability factor should be ____________ to keep operating point stable.

13. The excess heat produced at the collector base junction due to self heating may even burn and
destroy the transistor. This is called ______________________ of the transistor.

14. The ripple factor of the inductor filter ____________ with decrease in load resistance.

15. The Depletion layer capacitance is the capacitance associated with ____________________
p-n junction diode.

16. The depletion region penetrates more into the _____________________ region.

17. Zener diode is designed to be operated in the ______________________ condition.

18. The maximum efficiency of a full wave rectifier is ___________________.

19. To bias the transistor in saturation region, the emitter-base junction is ___________ biased and
the collector-base junction is _____________ biased.

20. In common-base configuration of a transistor, when the reverse bias voltage is increased, the
width of the depletion region also increases. This is called _____________________.







-oOo-




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