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2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.D
ROHM : VMT3
2SC5658
* Denotes hFE
2SC2412K
2SC4617
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
Abbreviated symbol: B*
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
2SC4081
Abbreviated symbol: B*
Abbreviated symbol: B*
(1) Base
(2) Emitter
(3) Collector
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Abbreviated symbol: B*
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
0
.
8
0
.
1
5
0
~
0
.1 0.3Min.
1
.
1
(
2
)
(
1
)
2.8
1.6
0
.
4
(
3
)
1
.
9
2
.
9
0
.
9
5
0
.
9
5
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
1.25
2.1
0
.
3
0
.
1
5
0
~
0
.
1
0.1Min.
(3
)
0
.
9
0
.
7
0
.
2
0
.
6
5 (2
)
2
.
0
1
.
3
(1
)
0
.
6
5
(1) Emitter
(2) Base
(3) Collector
0
.
7
0
.
1
5
0.1Min.
0
.
5
5
0
~
0
.
1
0
.
2
1.6
1
.
6
1
.
0
0
.
3
0.8
(2)
0
.5
0
.5
(3)
0
.
2
(1)
0
~
0
.
1
(3) 0
.
3
2
0
.
8
1
.
2
0
.
1
3
0
.
50
.
2
2
0
.4
0
.4
1.2
0.8 0.2
0.15Max.
0.2
(2)
(1)
General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658


Features Dimensions (Unit : mm)
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2. Complements the 2SA1037AK / 2SA1576A /
2SA1774H / 2SA2029.



Structure
Epitaxial planar type
NPN silicon transistor



















Absolute maximum (Ta=25C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Parameter
VCBO
VCEO
VEBO
PC
Tj
Tstg
60 V
V
V
A
W
C
C
50
7
0.15 IC
0.2
0.15
2SC2412K, 2SC4081
2SC4617, 2SC5658
150
55 to +150
Symbol Limits Unit


Electrical characteristics (Ta=25C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Parameter Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
60
50
7

120

180
2

0.1
0.1
390
0.4

3.5
V IC=50A
IC=1mA
IE=50A
VCB=60V
VEB=7V
VCE=6V, IC=1mA
IC/IB=50mA/5mA
VCE=12V, IE=2mA, f=100MHz
VCE=12V, IE=0A, f=1MHz
V
V
A
A

V
MHz
pF
Typ. Max. Unit Conditions
Transition frequency





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c
2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.D
Data Sheet 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658
Packaging specifications and hFE
Package
Code
Taping
Basic ordering
unit (pieces)
T146 T106
3000 3000

QR
hFE
QR
2SC2412K
2SC4081

TL
3000

T2L
8000

QR 2SC4617
QR 2SC5658
Type


hFE values are classified as follows :
Item Q R
hFE 120 to 270 180 to 390





Electrical characterristic curves
Fig.1 Grounded emitter propagation
characteristics
0
0.1
0.2
0.5
2
20
50
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
5
10
T
a
=
1
0
0

C
VCE=6V
C
O
L
L
E
C
T
O
R


C
U
R
R
E
N
T

:

I
C

(
m
A
)
BASE TO EMITTER VOLTAGE : VBE (V)
2
5

5
5

C

Fig.2 Grounded emitter output
characteristics ( )
0
20
40
60
80
100
0.4 0.8 1.2 1.6 2.0 0
C
O
L
L
E
C
T
O
R


C
U
R
R
E
N
T

:

I
C


(
m
A
)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25C
IB=0A
0.40m
A
0.50mA
0.45m
A

0
0
2
8
10
4 8 12 16
4
6
20
IB=0A
Ta=25C
C
O
L
L
E
C
T
O
R


C
U
R
R
E
N
T

:

I
C


(
m
A
)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
3A
6A
9A
12A
15A
18A
21A
24A
27A
30A
Fig.3 Grounded emitter output
characteristics ( )






0.2
20
10
0.5 1 2 5 10 20 50 100 200
50
100
200
500
VCE=5V
3V
1V
Ta=25C
Fig.4 DC current gain vs.
collector current ( )
D
C


C
U
R
R
E
N
T


G
A
I
N

:

h
F
E
COLLECTOR CURRENT : IC (mA)

0.2 0.5 1 2 5 10 20 50 100 200
20
10
50
100
200
500
25C
55C
Ta=100C
VCE=5V
Fig.5 DC current gain vs.
collector current ( )
D
C


C
U
R
R
E
N
T


G
A
I
N

:

h
F
E
COLLECTOR CURRENT : IC (mA)

Fig. 6 Collector-emitter saturation
voltage vs. collector current
0.2
C
O
L
L
E
C
T
O
R


S
A
T
U
R
A
T
I
O
N


V
O
L
T
A
G
E

:

V
C
E
(
s
a
t)
(
V
)
COLLECTOR CURRENT : IC (mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 200
IC/IB=50
20
10
Ta=25C











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c
2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.D
Data Sheet 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658

Fig.7 Collector-emitter saturation
voltage vs. collector current ( )
0.2
C
O
L
L
E
C
T
O
R


S
A
T
U
R
A
T
I
O
N


V
O
L
T
A
G
E

:

V
C
E
(
s
a
t)
(
V
)
COLLECTOR CURRENT : IC (mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 200
IC/IB=10
Ta=100C
25C
55C

Fig.8 Collector-emitter saturation
voltage vs. collector current ()
C
O
L
L
E
C
T
O
R


S
A
T
U
R
A
T
I
O
N


V
O
L
T
A
G
E

:

V
C
E
(
s
a
t)
(
V
)
COLLECTOR CURRENT : IC (mA)
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100
IC/IB=50
Ta=100C
25C
55C

Fig.9 Gain bandwidth product vs.
emitter current
50
0.5 1 2 5 10 20 50 100
100
200
500
Ta=25C
VCE=6V
EMITTER CURRENT : IE (mA)
T
R
A
N
S
I
T
I
O
N


F
R
E
Q
U
E
N
C
Y

:

f
T


(
M
H
z
)





Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
C
O
L
L
E
C
T
O
R


O
U
T
P
U
T


C
A
P
A
C
I
T
A
N
C
E

:

C
o
b

(
p
F
)
E
M
I
T
T
E
R


I
N
P
U
T


C
A
P
A
C
I
T
A
N
C
E



:

C
i
b

(
p
F
)
0.2 0.5 1 2 5 10 20 50
1
2
5
10
20
C
o
b
Ta=25C
f=1MHz
IE=0A
IC=0A
C
ib

Fig.11 Base-collector time constant
vs. emitter current
0.2 0.5 1 2 5 10

B
A
S
E


C
O
L
L
E
C
T
O
R


T
I
M
E


C
O
N
S
T
A
N
T

:

C
c

r
b
b
' (
p
s
)
EMITTER CURRENT : IE (mA)
10
20
50
100
200
Ta=25C
f=32MHZ
VCB=6V


R1120A
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