Technische Information / Technical Information

IGBT-Module
IGBT-Modules
BSM300GB120DLC
vorlufige Daten
preliminary data
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES 1200 V
Kollektor-Dauergleichstrom
T
C
= 80 C I
C,nom. 300 A
DC-collector current
T
C
= 25 C I
C 625 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80C I
CRM 600 A
Gesamt-Verlustleistung
total power dissipation
T
C
=25C, Transistor P
tot 2,5 kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES +/- 20V V
Dauergleichstrom
DC forward current
I
F 300 A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms I
FRM 600 A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125C I
2
t 19 kA
2
s
Isolations-Prfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min. V
ISOL 2,5 kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min. typ. max.
Kollektor-Emitter Sttigungsspannung
I
C
= 300A, V
GE
= 15V, T
vj
= 25C V
CE sat - 2,1 2,6 V
collector-emitter saturation voltage
I
C
= 300A, V
GE
= 15V, T
vj
= 125C - 2,4 V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 12mA, V
CE
= V
GE
, T
vj
= 25C V
GE(th) 4,5 5,5 6,5 V
Gateladung
gate charge
V
GE
= -15V...+15V Q
G - - - C
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V C
ies - 21 - nF
Rckwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V C
res - - - nF
Kollektor-Emitter Reststrom
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25C I
CES - 0,02 0,5 mA
collector-emitter cut-off current
V
CE
= 1200V, V
GE
= 0V, T
vj
= 125C - 0,5 mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C I
GES - - 350 nA
prepared by: Mark Mnzer date of publication: 1999-03-18
approved by: Jens Thurau revision: 1b
1(8) DB_BSM300GB120DLC
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM300GB120DLC
vorlufige Daten
preliminary data
Charakteristische Werte / Characteristic values
Transistor / Transistor
min. typ. max.
Einschaltverzgerungszeit (ind. Last)
I
C
= 300A, V
CE
= 600V
turn on delay time (inductive load)
V
GE
= 15V, R
G
= 3,3, T
vj
= 25C t
d,on - 0,05 - s
V
GE
= 15V, R
G
= 3,3, T
vj
= 125C - 0,06 - s
Anstiegszeit (induktive Last)
I
C
= 300A, V
CE
= 600V
rise time (inductive load)
V
GE
= 15V, R
G
= 3,3, T
vj
= 25C t
r - 0,05 - s
V
GE
= 15V, R
G
= 3,3, T
vj
= 125C - 0,07 - s
Abschaltverzgerungszeit (ind. Last)
I
C
= 300A, V
CE
= 600V
turn off delay time (inductive load)
V
GE
= 15V, R
G
= 3,3, T
vj
= 25C t
d,off - 0,57 - s
V
GE
= 15V, R
G
= 3,3, T
vj
= 125C - 0,57 - s
Fallzeit (induktive Last)
I
C
= 300A, V
CE
= 600V
fall time (inductive load)
V
GE
= 15V, R
G
= 3,3, T
vj
= 25C t
f - 0,04 - s
V
GE
= 15V, R
G
= 3,3, T
vj
= 125C - 0,05 - s
Einschaltverlustenergie pro Puls
I
C
= 300A, V
CE
= 600V, V
GE
= 15V
turn-on energy loss per pulse
R
G
= 3,3, T
vj
= 125C, L
S
= 60nH E
on - 35 - mWs
Abschaltverlustenergie pro Puls
I
C
= 300A, V
CE
= 600V, V
GE
= 15V
turn-off energy loss per pulse
R
G
= 3,3, T
vj
= 125C, L
S
= 60nH E
off - 36 - mWs
Kurzschluverhalten
t
P
10sec, V
GE
15V, R
G
= 3,3
SC Data
T
Vj
125C, V
CC
=900V, V
CEmax
=V
CES
-L
sCE
dI/dt I
SC - 1800 - A
Modulinduktivitt
stray inductance module
L
sCE - 25 - nH
Modul Leitungswiderstand, Anschlsse Chip
module lead resistance, terminals chip
T
C
=25C R
CC+EE - 0,20 - m
Charakteristische Werte / Characteristic values
Diode / Diode
min. typ. max.
Durchlaspannung
I
F
= 300A, V
GE
= 0V, T
vj
= 25C V
F - 1,8 2,3 V
forward voltage
I
F
= 300A, V
GE
= 0V, T
vj
= 125C - 1,7 V
Rckstromspitze
I
F
= 300A, - di
F
/dt = 5400A/sec
peak reverse recovery current
V
R
= 600V, VGE = -15V, T
vj
= 25C I
RM - 348 - A
V
R
= 600V, VGE = -15V, T
vj
= 125C - 420 - A
Sperrverzgerungsladung
I
F
= 300A, - di
F
/dt = 5400A/sec
recovered charge
V
R
= 600V, VGE = -15V, T
vj
= 25C Q
r - 28 - As
V
R
= 600V, VGE = -15V, T
vj
= 125C - 58 - As
Abschaltenergie pro Puls
I
F
= 300A, - di
F
/dt = 5400A/sec
reverse recovery energy
V
R
= 600V, VGE = -15V, T
vj
= 25C E
rec - 9 - mWs
V
R
= 600V, VGE = -15V, T
vj
= 125C - 21 - mWs
2(8) DB_BSM300GB120DLC
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM300GB120DLC
vorlufige Daten
preliminary data
Thermische Eigenschaften / Thermal properties
min. typ. max.
Innerer Wrmewiderstand
Transistor / transistor, DC R
thJC - - 0,05 K/W
thermal resistance, junction to case
Diode/Diode, DC - - 0,125 K/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per module

Paste
= 1 W/m * K /
grease
= 1 W/m * K
R
thCK - 0,01 - K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj - - 150 C
Betriebstemperatur
operation temperature
T
op -40 - 125 C
Lagertemperatur
storage temperature
T
stg -40 - 150 C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
AL
2
O
3
Kriechstrecke
creepage distance
20 mm
Luftstrecke
clearance
11 mm
CTI
comperative tracking index
275
Anzugsdrehmoment f. mech. Befestigung
M1 3 6 Nm
mounting torque

Anzugsdrehmoment f. elektr. Anschlsse
terminals M6 M2 2,5 5 Nm
terminal connection torque
Gewicht
weight
G 420 g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3(8) DB_BSM300GB120DLC
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM300GB120DLC
vorlufige Daten
preliminary data
I
C

[
A
]
V
CE
[V]
I
C

[
A
]
V
CE
[V]
0
100
200
300
400
500
600
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
Tj = 25C
Tj = 125C
Ausgangskennlinie (typisch) I
C
= f (V
CE
)
Output characteristic (typical) V
GE
= 15V
0
100
200
300
400
500
600
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
VGE = 7V
Ausgangskennlinienfeld (typisch) I
C
= f (V
CE
)
Output characteristic (typical) T
vj
= 125C
4(8) DB_BSM300GB120DLC
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM300GB120DLC
vorlufige Daten
preliminary data
I
C

[
A
]
V
GE
[V]
I
F

[
A
]
V
F
[V]
0
100
200
300
400
500
600
5 6 7 8 9 10 11 12
Tj = 25C
Tj = 125C
bertragungscharakteristik (typisch) I
C
= f (V
GE
)
Transfer characteristic (typical) V
CE
= 20V
0
100
200
300
400
500
600
0,0 0,5 1,0 1,5 2,0 2,5 3,0
Tj = 25C
Tj = 125C
Durchlakennlinie der Inversdiode (typisch) I
F
= f (V
F
)
Forward characteristic of inverse diode (typical)
5(8) DB_BSM300GB120DLC
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM300GB120DLC
vorlufige Daten
preliminary data
E

[
m
J
]
I
C
[A]
E

[
m
J
]
R
G
[]
0
10
20
30
40
50
60
70
80
90
100
0 100 200 300 400 500 600
Eoff
Eon
Erec
Schaltverluste (typisch) E
on
= f (I
C
) , E
off
= f (I
C
) , E
rec
= f (I
C
)
Switching losses (typical) V
GE
=15V, R
gon
= R
goff
=3,3 , V
CE
= 600V, T
j
= 125C
0
20
40
60
80
100
120
140
160
2 4 6 8 10 12 14 16 18 20 22
Eoff
Eon
Erec
Schaltverluste (typisch) E
on
= f (R
G
) , E
off
= f (R
G
) , E
rec
= f (R
G
)
Switching losses (typical) V
GE
=15V , I
C
= 300A , V
CE
= 600V , T
j
= 125C
6(8) DB_BSM300GB120DLC
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM300GB120DLC
vorlufige Daten
preliminary data
Z
t
h
J
C
[
K

/

W
]
t [sec]
i 1 2 3 4
r
i
[K/kW] : IGBT 22,27 16,95 10,76 0,02

i
[sec]
: IGBT 0,006 0,029 0,043 1,014
r
i
[K/kW]
: Diode 34,12 50,84 26,33 13,71

i
[sec]
: Diode 0,006 0,035 0,033 0,997
I
C

[
A
]
V
CE
[V]
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA) V
GE
= 15V, R
g
= 3,3 Ohm, T
vj
= 125C
Transienter Wrmewiderstand Z
thJC
= f (t)
Transient thermal impedance
0
100
200
300
400
500
600
700
0 200 400 600 800 1000 1200 1400
IC,Modul
IC,Chip
0,001
0,01
0,1
1
0,001 0,01 0,1 1 10 100
Zth:Diode
Zth:IGBT
7(8) DB_BSM300GB120DLC
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM300GB120DLC
vorlufige Daten
preliminary data
8(8) DB_BSM300GB120DLC