COURSE CODE: EXPERIMENT NO: 1

COURSE INSTRUCTOR: DATE:

TITLE: MARKS
OBJECTIVE:
PRELAB :
1a /0.5
1b /0.5
2a /0.5
2b /0.5
/ 2
EXPERIMENT RESULT:
Part A : Silicon Diode

Table 1-1 /2
Table 1-2 /2
Forward-biased graph /2
Reversed-biased graph /2
Part B : Zener Diode
/2
Zener diode graph /2
/ 12
POST LAB:
Question 1:
a /1
b /1
Question 2:
a /1
b /1
c /1
/ 5
CONCLUSION: / 1
INSTRUCTOR COMMENTS: TOTAL
/ 20
Table 1-3
Semester: 2 Academic Year: 2011 / 2012
TIME:
STUDENT NAME: STUDENT ID:
SECTION:

WORKBENCH NO:
GROUP MEMBER: STUDENT ID:
UNIVERSITI TENAGA NASIONAL
Dept of Electronics and Communication Engineering
College of Engineering
EEEB141
Silicone & Zener Diode Characteristics
The objectives of this laboratory experiment are to study the I-V characteristics for normal and zener diodes
EEEB 141ELECTRONICS DESIGN LAB, Lab 1

1
LAB 1 SILICONE & ZENER DIODES CHARACTERISTICS


LEARNING OBJECTIVES
By the end of this experiment, you should be able to:
Measure and plot the forward and reverse-biased characteristics for a diode.
Measure and plot the characteristics for Zener diodes.

MATERIALS
Resistors: 1 330, 1 1.0M, 560 5W
Components: 1 1N4148 or equivalent, 1 1N4740


EQUIPMENT
Tektronix PS280 DC Power Supply
Fluke 45 Dual Display Multimeter


PRE-LAB ASSIGNMENT

Answer the following questions:

1.

Silicon Diode Characteristics
a. The semiconductor diode is basically a pn junction. Draw a simple diagram to
show the cross section of the diode. On the diagram, indicate

the p and n regions
as well as the anode and the cathode of the diode.







b. Sketch

the I-V characteristic of an ideal diode.












EEEB 141ELECTRONICS DESIGN LAB, Lab 1

2
2.

Zener Diode
a. Sketch

the general I-V Zener diode characteristics indicating all important
points.









b. State two

differences between normal diodes and Zener diodes.




EEEB 141ELECTRONICS DESIGN LAB, Lab 1

3
BACKGROUND

Diode is a device formed from a junction of p-type and n-type semiconductor materials. The
lead connected to the p-type material is called anode while the lead connected to the n-
type material is called cathode. Normally, the cathode of a diode is marked by a solid line
on the diode.






One important application of diode is rectification. When it is forward biased (higher
potential connected to the anode), the diode will allow current to pass. When it reversed
biased (higher potential connected to the cathode), the current is almost zero or blocked.















The diode can be thought of a switch that closes (on) when the diode is forward biased, and
opens (off) when diode is reversed biased.

Another important characteristic of a diode is the reverse bias breakdown. Applied reverse
bias voltage cannot increase without limit. At some point, breakdown occurs and the
reverse-bias direction increases rapidly. Breakdown may damage to a normal diode.
However, diodes called Zener diodes can be designed and fabricated to provide a specific
breakdown point.

IN-LAB ACTIVITIES


PART A (Normal Diode- Characteristic)
1. Measure and record the resistance of the resistors. Then check your diode with the
multi-meter. Measure the forward and reverse resistances of the diode. Record and
tabulate the data.

2. Construct the forward-biased circuit shown in Figure 1-1. Set the power supply for
zero volts.

Cathode
Anode
Forward Bias
Region
Reverse Bias
Region
Reverse Bias
Breakdown Region
I
V
EEEB 141ELECTRONICS DESIGN LAB, Lab 1

4

Figure 1-1

3. Monitor the forward voltage drop, V
D,FOR
, across the diode, D
1
. Slowly increase V
S

to establish 0.35V across the diode. Measure the voltage across the resistor, V
R1
,
and compute I
D FOR
. Record and tabulate the data in Table 1-1.

4. Repeat step 3 for voltage V
D,FOR
of 0.40V, 0.45V, 0.50V, 0.55V, 0.60V, 0.65V,
0.70V, and 0.75V.

5. Connect the reverse-biased circuit shown in Figure 1-2. Set the power supply, V
S
to
5.0V, and then to 10.0V, 15.0V, 20.0V, and 25V. Measure V
D REV
and compute
I
D,REV
for each voltage applied. Record and tabulate the data in Table 1-2.


Figure 1-2



EEEB 141ELECTRONICS DESIGN LAB, Lab 1

5
RESULTS

Resistor Resistances
R
330
:

R
1M
: M

Diode Resistances
Forward bias: M

Reverse bias: M
V
D,FOR
(V)
V
S
(V) V
R1
(V)
1
R1
D
R
V
I = (A)

Nominal Measured

0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75

Table 1-1

V
S
(V)
V
R1
(V) V
D,REV
(V)
1
R1
D
R
V
I = (A)

Nominal Measured
5
10
15
20
25

Table 1-2
EEEB 141ELECTRONICS DESIGN LAB, Lab 1
6

PART B (Zener Diode characteristic)
1. Build the circuit shown in Figure 1-3 using a 5.0V Zener diode.


Figure 1-3

2. Monitor V
in
and V
out
and record V
out
for V
in
values from 0 10V at intervals of
0.5V.

3. Record your results in Table 1-3.

4. Plot graphs of current, I against the output voltage, V
o
for the Zener diode on a
graph paper.

EEEB 141ELECTRONICS DESIGN LAB, Lab 1
7
RESULTS

V
in

(V)
V
out

(V)
V
R
(V)
R
V
I
R
=
(mA)
V
in

(V)
V
out
(V)
V
R

(V)
R
V
I
R
=
(mA)
0.5 5.5
1.0 6.0
1.5 6.5
2.0 7.0
2.5 7.5
3.0 8.0
3.5 8.5
4.0 9.0
4.5 9.5
5.0 10.0

Table 1-3
EEEB 141ELECTRONICS DESIGN LAB, Lab 1
8
POST LAB DISCUSSIONS

1. Silicon Diode Characteristic

a. Describe your observation/understanding based on the plotted forward biased
diode curve graph.







b. Discuss the difference from the experimental I-V plot, compared to the ideal diode
I-V characteristic drawn in the pre-lab question.







2. Zener Diode Characteristic

a. Describe your observation based on the plotted I-V graph in Part B.




b. If the same experiment was repeated using a 10.0 V Zener Diode, explain the
expected resulting I-V characteristic. Sketch the expected I-V graph.








c. Name an example of possible application of a Zener diode? Explain briefly.



CONCLUSIONS




Free Plain Graph Paper from http://incompetech.com/graphpaper/plain/
Free Plain Graph Paper from http://incompetech.com/graphpaper/plain/
Free Plain Graph Paper from http://incompetech.com/graphpaper/plain/