February 2007

FDN340P
Single P-Channel
, Logic Level
, PowerTrench MOSFET
GeneralDescription

Features

Thi
s P-Channel Logi
c Level MOSFET i
s produced
usi
ng Fai
rchi
ld Semi
conductor advanced Power Trench
process that has been especi
ally tai
lored to mi
ni
mi
ze
the on-state resi
stance and yet mai
ntai
n low gate
charge for superi
or swi
tchi
ng performance.

2A,20 V

RDS(ON)= 70 m @ V GS = 4.5 V
RDS(ON)= 110 m @ V GS = 2.5 V

Low gate charge (7.2 nC typi

cal).
Hi
ghperformance trench technology for extremely
low RDS(ON).

These devi
ces are well sui
ted for portable electroni
cs
appli
cati
ons:load swi
tchi
ng and power management,
batterychargi
ng ci
rcui
ts,and DC/DC conversi
on.

Hi
gh power versi
on ofi
ndustryStandard SOT-23
package. Identi
cal pi
n-out to SOT-23 wi
th 30%
hi
gher power handli
ng capabi
li
ty.




 
  

Absolute Maxim um Ratings

Sym bol

TA=25oC unlessotherwi
se noted

Ratings

Units

V DSS

Drai
n-Source Voltage

Param eter

20

V GSS

Gate-Source Voltage

ID

Drai
n Current

PD

Power Di
ssi
pati
on for Si
ngle Operati
on

Conti
nuous

(Note 1a)

Pulsed

TJ ,TSTG

10
(Note 1a)

0.5

(Note 1b)

0.46

55 to +150

(Note 1a)

250

C/
W

(Note 1)

75

C/
W

Operati
ng and Storage Juncti
on Temperature Range

Therm alCharacteristics
RJA

Thermal Resi
stance,Juncti
on-to-Ambi
ent

RJ C

Thermal Resi
stance,Juncti
on-to-Case

Package Marking and Ordering Inform ation

Device M arking

Device

ReelSize

Tape width

Quantity

340

FDN340P

8mm

3000 uni
ts

2007 Fai
rchi
ld Semi
conductor Corporati
on

FDN340P Rev E1

FDN340P

September 200

Symbol

Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Typ

Max Units

Off Characteristics
V GS = 0 V, ID = 250 A

BV DSS
BV DSS
TJ

DrainSource Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSSF

GateBody Leakage, Forward

V GS = 8 V,

V DS = 0 V

100

nA

IGSSR

GateBody Leakage, Reverse

V GS = 8 V,

V DS = 0 V

100

nA

1.5

On Characteristics

20

ID = 250 A,Referenced to 25C

V
12

mV/C

V DS = 16 V, V GS = 0 V

V DS = 16 V, V GS = 0 V,TJ =55C

10

(Note 2)

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient
Static DrainSource
OnResistance

V DS = V GS , ID = 250 A
ID = 250 A,Referenced to 25C

ID(on)

OnState Drain Current

V GS = 4.5 V,

V DS = 5 V

gFS

Forward Transconductance

V DS = 4.5 V,

ID = 2 A

V DS = 10 V,
f = 1.0 MHz

V GS = 0 V,

779

pF

121

pF

56

pF

V GS(th)
V GS(th)
TJ
RDS(on)

V GS = 4.5 V,

0.4

0.8
3

ID = 2 A

V GS = 4.5 V, ID = 2 A,TJ =125C

V GS = 2.5 V,
ID = 1.7A,

mV/C

60

70

77

120

82

110

Dynamic Characteristics
600

Input Capacitance

175

Output Capacitance

80

Reverse Transfer Capacitance

Switching Characteristics

(Note 2)

V DD = 10 V,
V GS = 4.5 V,

ID = 1 A,
RGEN = 6

td(on)

TurnOn Delay Time

tr

TurnOn Rise Time

td(off)

TurnOff Delay Time

27

43

ns

tf

TurnOff Fall Time

11

20

ns

Qg

Total Gate Charge

7.2

10

Qgs

GateSource Charge

Qgd

GateDrain Charge

V DS = 10V,
V GS = 4.5 V

ID = 3.5 A,

10

20

ns

10

ns

nC

1.7

nC

1.5

nC

DrainSource Diode Characteristics and Maximum Ratings

IS
V SD

Maximum Continuous DrainSource Diode Forward Current

DrainSource Diode Forward
V GS = 0 V, IS = 0.42 A
Voltage

(Note 2)

0.7

0.42

1.2

Notes:
unction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
1. RJA is the sum of the j
the drain pins. RJC is guaranteed by design while RCA is determined by the user'
s board design.

a. 250C/W when mounted on a

0.02in2 pad of 2 oz copper

b. 270C/W when mounted on a

.001 in2 pad of 2 oz copper

Scale 1 : 1 on letter size paper

2.Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

FDN340P Rev E1

FDN340P

Electrical Characteristics

FDN340P

Typical Characteristics

15
V GS = -4.5V

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

-2.5V
V

12
-ID, DRAIN CURRENT (A)

-3.0V

-3.5V

9
-2.0V
6

3
-1.5V
0

V GS=-2.0V

1.8
1.6

-2.5V

1.4

-3.0V
1.2

-3.5V
-4.5V

1
0.8

-VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

15

0.22
ID = -1A

ID = -2A
V GS = -4.5V

1.3

RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

12

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

1.2
1.1
1
0.9
0.8
0.7

0.18

0.14
TA = 125o C
0.1
TA = 25 oC
0.06

0.02
-50

-25

25

50

75

100

125

150

T J, JUNCTION TEMPERATURE ( oC)

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

10
T A = -55oC

25o C

-IS , REVERSE DRAIN CURRENT (A)

V DS = -5V
8
-ID, DRAIN CURRENT (A)

-ID , DRAIN CURRENT (A)

125oC
6

0
0.5

1.5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

2.5

V GS = 0V
1
T A = 125o C
0.1
25oC
0.01
-55 o C
0.001

0.0001
0

0.2

0.4

0.6

0.8

1.2

-VSD , BODY DIODE FORW ARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDN340P Rev E1

FDN340P

Typical Characteristics

1000
ID = -3.5A

V DS = -5V

-10V

800
-15V

600

400
COSS

200

CRSS

0
0

Q g, GATE CHARGE (nC)

15

20

Figure 8. Capacitance Characteristics.

50

100

100ms
1

1s
DC

V GS = -10V
SINGLE PULSE
RJA = 270 oC/W

0.1

SINGLE PULSE
RJA = 270 C/W
TA = 25C

40

100 s
1ms
10ms

R DS(ON) LIMIT

POWER (W)

10

10

-V DS , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

-ID , DRAIN CURRENT (A)

f = 1 MHz
V GS = 0 V

CISS

CAPACITANCE (pF)

-V GS, GATE-SOURCE VOLTAGE (V)

30

20

10

T A = 25o C
0.01
0.1

10

100

0
0.001

0.01

0.1
1
10
SINGLE PULSE TIME (SEC)

-V D S, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

100

Figure 10. Single Pulse Maximum

Power Dissipation.

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

1
0.5

D = 0.5

0.2
0.1
0.05
0.02
0.01

0.2

R JA (t) = r(t) * R JA
R JA = 270 C/W

0.1
0.05
0.02
0.01

P(pk)

t1

Single Pulse

t2

0.005

TJ - T A = P *R JA (t)

0.002

Duty Cycle, D = t1 /t2

0.001
0.0001

0.001

0.01

0.1

10

100

t1 , TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDN340P Rev E1

300

TRADEMARKS
The following are registered and unregistered tradem ark s F airc hild S em ic onduc tor owns or is authoriz ed to use and is not
intended to b e an ex haustiv e list of all suc h tradem ark s.
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EnS igna
F A C T
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F A C T Q uiet S eries
G lob alO p toisolator
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H iS eC
I2 C
i-Lo
Im p liedD isc onnec t
IntelliM A X
IS O P L A N A R
L ittleF ET
M IC R O C O U P L ER
M ic roF ET
M ic roP ak
M IC R O W IR E
M SX
M S X P ro
A c ross the b oard. A round the world.
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U niF ET
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DISC L AIMER
F A IR C H IL D S EM IC O N D U C TO R R ES ER V ES TH E R IG H T TO M A K E C H A N G ES W ITH O U T F U R TH ER N O TIC E TO A N Y P R O D U C TS
H ER EIN TO IM P R O V E R EL IA B IL ITY , F U N C TIO N O R D ES IG N . F A IR C H IL D D O ES N O T A S S U M E A N Y L IA B IL ITY A R IS IN G O U T O F TH E
A P P L IC A TIO N O R U S E O F A N Y P R O D U C T O R C IR C U IT D ES C R IB ED H ER EIN ; N EITH ER D O ES IT C O N V EY A N Y L IC EN S E U N D ER ITS
P A TEN T R IG H TS , N O R TH E R IG H TS O F O TH ER S . TH ES E S P EC IF IC A TIO N S D O N O T EX P A N D TH E TER M S O F F A IR C H IL D S
W O R L D W ID E TER M S A N D C O N D ITIO N S , S P EC IF IC A L L Y TH E W A R R A N TY TH ER EIN , W H IC H C O V ER S TH ES E P R O D U C TS .
L IF E SU P P O RT P O L IC Y
F A IR C H IL D S P R O D U C TS A R E N O T A U TH O R IZ ED F O R U S E A S C R ITIC A L C O M P O N EN TS IN L IF E S U P P O R T D EV IC ES O R S Y S TEM S
W ITH O U T TH E EX P R ES S W R ITTEN A P P R O V A L O F F A IR C H IL D S EM IC O N D U C TO R C O R P O R A TIO N .

A s used herein:
1 . L ife sup p ort dev ic es or sy stem s are dev ic es or sy stem s
whic h, (a) are intended for surgic al im p lant into the b ody , or
(b ) sup p ort or sustain life, or (c ) whose failure to p erform
when p rop erly used in ac c ordanc e with instruc tions for use
p rov ided in the lab eling, c an b e reasonab ly ex p ec ted to
result in signific ant injury to the user.

2. A c ritic al c om p onent is any c om p onent of a life sup p ort

dev ic e or sy stem whose failure to p erform c an b e
reasonab ly ex p ec ted to c ause the failure of the life sup p ort
dev ic e or sy stem , or to affec t its safety or effec tiv eness.

P RO DU C T STATU S DEF IN ITIO N S

De fin itio n o f Te rm s

Da ta s h e e t Id e n tific a tio n

P ro d u c t Sta tu s

De fin itio n

A dv anc e Inform ation

F orm ativ e or In
D esign

This datasheet c ontains the design sp ec ific ations for

p roduc t dev elop m ent. S p ec ific ations m ay c hange in
any m anner without notic e.

P relim inary

F irst P roduc tion

This datasheet c ontains p relim inary data, and

sup p lem entary data will b e p ub lished at a later date.
F airc hild S em ic onduc tor reserv es the right to m ak e
c hanges at any tim e without notic e in order to im p rov e
design.

N o Identific ation N eeded

F ull P roduc tion

This datasheet c ontains final sp ec ific ations. F airc hild

S em ic onduc tor reserv es the right to m ak e c hanges at
any tim e without notic e in order to im p rov e design.

O b solete

N ot In P roduc tion

This datasheet c ontains sp ec ific ations on a p roduc t

that has b een disc ontinued b y F airc hild sem ic onduc tor.
The datasheet is p rinted for referenc e inform ation only .
R ev . I22