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KBP200 - KBP210 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 2. Amperes FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Ideal for printed circuit board.
KBP200 - KBP210 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 2. Amperes FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Ideal for printed circuit board.
KBP200 - KBP210 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 2. Amperes FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Ideal for printed circuit board.
Io : 2.0 Amperes FEATURES : * High case dielectric strength * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.4 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL KBP 200 KBP 201 KBP 202 KBP 204 KBP 206 KBP 208 KBP 210 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc = 50C IF(AV) 2.0 Amps. Peak Forward Surge Current, Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 60 Amps. Rating for fusing ( t < 8.3 ms. ) I 2 t 10 A 2 S Maximum Forward Voltage per Diode at IF = 1.0 Amp. VF 1.0 Volts Maximum DC Reverse Current Ta = 25 C IR 10 A at Rated DC Blocking Voltage Ta = 100 C IR(H) 1.0 mA Typical Junction Capacitance per Diode (Note 1) CJ 24 pF Typical Thermal Resistance (Note 2) RJA 30 C/W Operating Junction Temperature Range TJ - 50 to + 125 C Storage Temperature Range TSTG - 50 to + 125 C Notes : 1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts. 2 ) Thermal resistance from Junction to Ambient with units mounted on a 0.47" X 0.47" ( 12mm X 12mm ) Cu. Pads. UPDATE : MARCH 6, 2000 RATING 0.105 (2.66) 0.085 (2.16) KBP 0.71 (18.0) 0.63 (16.0) 0.276 (7.01 ) 0.236 (5.99) 0.16 (4.00) 0.14 (3.55) 0.035 (0.89) 0.028 (0.71) 0.500 (12.7) MIN. Dimensions in inches and ( millimeter ) + AC AC 0.825 (20.95) 0.605 (15.36) This datasheet has been downloaded fromhttp://www.digchip.comat this page RATING AND CHARACTERISTIC CURVES ( KBP200 - KBP210 ) FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT 0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS 60 Hz, Resistive or inductive load. P.C. Board Mounted with 0.47" X 0.47" ( 12mm X 12mm ) Cu. pads. 1.5 1.0 0.5 2.0 100 10 1.0 60 0 80 0 40 20 0.1 10 80 0.01 0.01 1.0 0.1 100 140 0 20 40 60 120 PERCENT OF RATED REVERSE VOLTAGE, (%) P E A K
F O R W A R D
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A M P E R E S F O R W A R D
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M I C R O A M P E R E S TJ = 25 C Pulse Width = 300 s 1 % Duty Cycle 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD TJ = 55 C TJ = 100 C TJ = 25 C 50 30 10 70