Advanced Packaging For HB-LED

Advanced Packaging for HB-LEDs
Klaus-Dieter Lang
Fraunhofer IZM
Klaus-Dieter Lang; July 13th., 2011, Semicon West San Francisco
Outline
Introduction
Die-Bonding
Wire Bonding and Flip Chip Technology
Fraunhofer IZM
Wire Bonding and Flip Chip Technology
Alternative Assembly Concepts
Summary
Challenges High Brightness LED (HB-LED)
Development and Application
Power Supply Unit
and Concepts
Thermal Design
Packaging Technologies
Fraunhofer IZM
Optics / Color conversion
Environmental
Compatibility
Die Attachment
Gluing
Soldering
Sintering
Wire Bond
Assembly of Ultra HB-LEDs
Fraunhofer IZM
Wire Bond
Flip Chip
Thermocompression Bonding
Soldering
Advantages of Gluing
Cheap material
Moderate equipment price
Lower process temperature
Fraunhofer IZM
Most of commercial chips are
gluing compatible
Disadvantages by Poor Mechanical or Thermal Stability
Fraunhofer IZM
Overview
(carrier, chip, diebond, wirebond)
focus diebond
(correlation between adhesive,
semiconductor, carrier, mold
material)
R
th,int1
R
th,int2
R
th,TIM
d
A
R R
bulk
th eff th

+ =
1
0 , ,
2 int , , 1 int ,
,
th TIM th th
eff
th
R R R R + + =
2,5
Linear function
Q
T
R
eff
th
&
=
,
Characterization of Thermal Interface Materials
Fraunhofer IZM
0 200 400 600 800 1000
0,0
0,5
1,0
1,5
2,0
R
th0
R
t
h
,
e
f
f

[
K
/
W
]
BLT [m]
TIM
~ 1/slop
Linear function
R. Jordan, O. Wittler, et al. (Fraunhofer IZM)
Nanotechnologies to improve heat transfer
Multi
modal
particles
Polymer fibres
&
metallic alloy
Surface micro-
structuring
Nano sponge
interfaces
Vertically
aligned CNT
Nano-scale
optimization
TIM optimization Surface optimization Nano-scale optimization
Fraunhofer IZM
Increase
thermal
conductivity
Increase
thermal
conductivity
Reduce
BLT
Reduce
interface
resistance
Improve
phonon
transfer
Increase
thermal
conductivity
TIM optimization Surface optimization Nano-scale optimization
B. Wunderle, M. Abo Ras, O. Wittler, et al. (Fraunhofer IZM, TU Chemnitz)
10
15
20
A11
F1
F3
F7
F8
F9
F16

I

[
m
A
]
F9
Disadvantages by lower Accuracy of Assmebly Processes
(e.g. Glue Residues at the Junction)
Fraunhofer IZM
0,0 0,5 1,0 1,5 2,0
0
5
U [V]
Die Attachment
Gluing
Soldering
Sintering
Wire Bond
Assembly of Ultra HB-LEDs
Fraunhofer IZM
Wire Bond
Flip Chip
Soldering
Advantages of Soldering or Sintering
Up to 200 times better thermal
interconnect
High mechanical strength
No corrosion of the electrical
interface observed
Compensation of CTE by choice
Fraunhofer IZM
Compensation of CTE by choice
of the solder possible
Shape of the solder can be
controlled by pad and die
metallization
Stability for further high
temperature process steps
SnAgCu Phase Diagram
Fraunhofer IZM
Challenge: Wetability of LED Dice
Fraunhofer IZM
Supplier B 40 mil (LM) Supplier B 24 mil (LM)
R. Jordan, H. Oppermann, et al. (Fraunhofer IZM)
Copper Based LED on Silicon Substrate
Reflow Soldering with SnAg with Activating Atmosphere
x-ray
Fraunhofer IZM
400
600
B at 150C
C at 150C
D at 200C

s
h
e
a
r

v
a
l
u
e
s

/

g
Shear Force Measurement
Au10Sn90 ( B):
40% decrease of shear force
values after 650 h ageing
Mode: fracture in solder joints
Au80Sn20 ( C,D):
Au10Sn90 (B, 240C) compared with Au80Sn20 (C,290C; D,350C)
Fraunhofer IZM
0 200 400 600
0
200
s
h
e
a
r

v
a
l
u
e
s

/

g
aging / h
Au80Sn20 ( C,D):
no significant changes
Mode: pad lift and chip crack
at high levels
shear force glued: 120 200 g
Copper Based LED on Silicon Substrate
Reflow Soldering with SnAg with activating atmosphere
cross section close up look
Fraunhofer IZM
Test Assembly with OSRAM LEDs
Fraunhofer IZM
OSRAM LEDs on AlN MC-PCB subassembly with wirebonds
R. Jordan, H. Oppermann, St. Schmitz, et al. (Fraunhofer IZM)
Die Attachment
Gluing
Soldering
Sintering
Wire Bond
Assembly of Ultra High Brightness LEDs
Fraunhofer IZM
Wire Bond
Flip Chip
Soldering
Assembly with Ag Sintering
Silicon Chip
Ag Metallization
Ag Sinter Paste
Ag Metallization
Fraunhofer IZM
Ag Metallization
Substrate
SEM Pictures
Ag Sintering
Fraunhofer IZM
Ag-Powder
after drying
Ag-Powder
heat without force
Ag-powder
heat and force
R. Jordan, H. Oppermann, M. Hutter, et al. (Fraunhofer IZM)
well defined
interface
Ag plated
Ag Sintered Interconnection, FIB Analysis
Fraunhofer IZM
Ag sintered
Nano-Sponge
bonding zone
Flip Chip Sintering
13 nm pore size
Potential Application:
- low pressure, low temperature bonding (MEMS, laser)
- compressible bonding (acommodate topography)
- containment for medical applications
- large surface area (sensors, catalytics)
- bio compatible (e.g. neuronal interface)
- optical devices (plasmonics, SERS)
Fraunhofer IZM
densified
zone
80% pore
volume
R. Jordan, H. Oppermann, M. Hutter, et al. (Fraunhofer IZM)
Thermal Comparison between Gluing / Soldering / Sintering
Fraunhofer IZM
Scenario:
LED on MC-PCB, MC-PCB on Heatsink, T = 25,0C
I
1
= 100 mA, I
2
= 350 mA, I
3
= 700 mA
Parametric Study on Heat Conduction and Spreading
HP
HP/DCB
LED-
Matrix
1
0

m
m
3 mm
1
2
3
4
5
6
7
8
R
t
h

K
/
W
LED-die
LED-submount
solder
spreader-top
spreader-inner
spreader-bot
TIM
(Al)-Base
TIM
Fraunhofer IZM
HP
DCB
S
7
S
1
7
S
1
8
-
H
P
2
S
1
8
b
S
1
9
-
H
P
3
S
1
9
b
S
2
0
H
P
4
S
2
0
b
S
2
1
-
H
P
5
S
2
1
b
S
2
2
-
H
P
6
S
2
2
b
S
2
3
-
H
P
7
S
2
3
b
0
R. Jordan, IZM Berlin
heatpipe
phosphor
MC-PCB adhesion layer dielectric
45,00
50,00
55,00
60,00
65,00
T
e
m
p
e
r
a
t
u
r
e
,

C
Comparison Gluing / Soldering / Sintering for blue LED chip
Fraunhofer IZM
25,00
30,00
35,00
40,00
100,00 300,00 500,00 700,00 900,00 1100,00 1300,00 1500,00 1700,00
T
e
m
p
e
r
a
t
u
r
e
Thermal load, mW
blau geklebt
blau geltet
blau gesinter
Blue glued
Blue soldered
Blue sintered
Comparison Gluing / Soldering / Sintering for red LED chip
45,00
50,00
55,00
60,00
65,00
T
e
m
p
e
r
a
t
u
r
e
,

C
rot geklebt
Red glued
Fraunhofer IZM
25,00
30,00
35,00
40,00
100,00 300,00 500,00 700,00 900,00 1100,00 1300,00 1500,00 1700,00
T
e
m
p
e
r
a
t
u
r
e
Thermal load, mW
rot geklebt
rot geltet
rot gesintert
Red glued
Red soldered
Red sintered
Comparison Gluing / Soldering / Sintering for white LED chip
45,00
50,00
55,00
60,00
65,00
70,00
75,00
T
e
m
p
e
r
a
t
u
r
e
,

C
Fraunhofer IZM
25,00
30,00
35,00
40,00
45,00
100,00 300,00 500,00 700,00 900,00 1100,00 1300,00 1500,00 1700,00 1900,00 2100,00
T
e
m
p
e
r
a
t
u
r
e
Thermal load, mW
'wei' geklebt
'wei' geltet
'wei'gesintert
White glued
White soldered
White sintered
Die Attachment
Gluing
Soldering
Sintering
Wire Bond
Fraunhofer IZM
Wire Bond
Flip Chip
Soldering
Wire bonding options for LED applications
Benefits of Au-ball/wedge bonding
Soft Au-ball prevents chip damage
Corrosion resistance against a wide range of
substances
Cheaper equipment compared to
wedge/wedge
Higher flexibility in loop shape
Higher speed (only for packages with multiple
Fraunhofer IZM
Higher speed (only for packages with multiple
chips)
Higher conductivity compared to Al
(wedge/wedge)
Low-loop wire bonding
Wire bonding options for LED applications
Benefits of Al-wedge/wedge bonding
Bonding at room temperature
Monometallic interface to Al
chipmetallization
Compatible to ENIG PCB metallization
(electroless plated Ni (3-5 m)/Au (0,04-
0,08 m)) for COB applications
Stitch-bonding for interconnection of
multiple LEDs with one wire
Fraunhofer IZM
multiple LEDs with one wire
Thick wires (up to 625 m) and ribbons (up
to 3 mm possible)
Stitch bonded LEDs
Wedge bond on LED
Wedge bond
Typical failure modes in wire bonded LED packages
Bonding interface
Neck/HAZ
Fraunhofer IZM
IMC formation (Au/Al)
Cross section analysis of an LED package
Die-attach
Overcurrent
Delamination of encapsulation material
R. Jordan, St. Schmitz, M. Schneider-Ramelow, et al. (Fraunhofer IZM)
Die Attachment
Gluing
Soldering
Sinering
Wire Bond
Fraunhofer IZM
Wire Bond
Flip Chip
Soldering
Thermocompression Bonding with Stud Bumps
Fraunhofer IZM
Thermocompression Bonding with electroplated Bumps
Fraunhofer IZM
Die Attachment
Gluing
Soldering
Sinering
Wire Bond
Fraunhofer IZM
Wire Bond
Flip Chip
Soldering
High Brightness Flip Chip LED with AuSn solder
217C
e
1
278C
e
2
252C
p: +L
1
L
1
+Au
Au-rich Sn-rich
Fraunhofer IZM
p-contact
n-GaAlAs
n-contact
Chip Pad
Substrat
10 m Au
Au
Sn
7 m Au
5 m Sn
3-5 m Au
Chip
Fraunhofer IZM
Reflector
active area
p-GaAlAs
Substrat
576 dice assembled on 4" Si wafer
Fraunhofer IZM
R. Jordan, H. Oppermann, M. Klein, et al. (Fraunhofer IZM)
Example
Die Attachment
- Soldering
Wire Bonding
Assembly of Ultra HB- LEDs
Fraunhofer IZM
Wire Bonding
Converter foil
Leadless Package
phosphor
converting layer
short loop
Au wire bond
lead free SnAg3.5
soldering
transparent
filling
High Power LED Packaging Tasks
Fraunhofer IZM
Au80Sn20
soldering
design of AlN
submount
underfilling
concepts for
heat
transfer
Assembly of Ultra HB-LEDs; Die-Bond
+
top
Fraunhofer IZM
LED
with Au80Sn20
Multilayer AlN
Ceramic
Die Attached LED
M. Rothermund
bottom
R. Jordan, H. Oppermann, St. Schmitz, J. Bauer, et al. (Fraunhofer IZM)
Assembly of Ultra High Brightness LEDs; Wire Bond
Fraunhofer IZM
Die Attached LED Au Wire Bonded LED
Filled, Covered,
and Singulated
LED
S. Schmitz
Dr. J. Bauer, F. Ebling
Assembly of Ultra High Brightness LEDs; IMS Assembly
+
top
Fraunhofer IZM
LED subassembly
bottom
IMS Lead Free with
Self Alignment
Assembled LED
OSRAM LED dice on metallized AlN watercooler, 600 W
Fraunhofer IZM
Summary
Important challenges in the realm of HB-LED packaging are
improvements in assembly efficiency, thermal conductivity,
substrate properties, packaging costs
New material solutions for high performance adhesives,
low temperature solders, TIMs, converter materials,
encapsulations, have to be developed
Fraunhofer IZM
encapsulations, have to be developed
Die-soldering and Flip Chip technology are promising
approaches to overcome Die-Gluing and Wire Bonding
disadvantages
Alternative assembly and interconnection technologies are
available for specific applications
Thank you for your
attention!
contact:
Prof. Dr. Klaus-Dieter Lang
Phone: +49 (30) 46403 -179
E-mail: kdlang@izm.fraunhofer.de
Fraunhofer IZM

Advanced Packaging For HB-LED

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Advanced Packaging for HB-LEDs

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