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Note: Graphical and algebraic calculations were performed using the following software:
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EE 320L Electronics I LABORATORY
LABORATORY REPORT
Laboratory Experiment No. #6
MOSFET Characterization
Written by: Jordan D. Ulmer Date Performed: 10/07/14
Lab Partners: Josh Behnken Lab Section 1, Tue,9:30 am-12:30 pm
Instructor: Mr. Mettler Teaching Assistant: Roya Naderi
Jordan Daniel Ulmer Page | 2
Note: Graphical and algebraic calculations were performed using the following software:
MatLab
Time of print: 9:21 PM 10/7/2014
Introduction:
Metal Oxide Semi-Conductor Field Effect Transistors or MOSFETS are a very common type of
transistor, they are faster than but are power hungry Bi-Polar Junction Transitors (BJTs). In
this lab AI hope to gain a basic understanding of the basic operation and characteristics of
MOSFETS.
PreLab:
Not Applicable.
Procedure/Results/Analysis:
Figure 1(A.): NMOS
(N:P:N)(Source:Gate:Drain)
Figure 2(A.): NMOS - Characterization
Circuit
A. NMOS Characterization
1. We first built the Setup detailed in Figure 2(A.): NMOS - Characterization
Circuit.
3. We then Set
and swept
from to in increments of ,
measuring
at each increment.
4. Similarly, we set
and swept
from to in increments of
, measuring
at each increment.
5. Again, we set
and swept
from to in increments of ,
measuring
at each increment.
Jordan Daniel Ulmer Page | 3
Note: Graphical and algebraic calculations were performed using the following software:
MatLab
Time of print: 9:21 PM 10/7/2014
Table 1(A.): NMOS Characterization Table
NMOS Characteristic
as a function of
and
(Volts)
(mA) @
(mA) @
(mA) @
0.000 0.014 0.019 0.020
0.200 3.870 7.650 10.280
0.400 4.307 9.150 15.330
0.600 4.424 9.530 16.600
0.800 4.490 9.695 17.130
1.000 4.535 9.823 17.398
1.200 4.575 9.936 17.638
1.400 4.610 10.013 17.807
1.600 4.644 10.098 18.007
1.800 4.679 10.176 18.222
2.000 4.705 10.255 18.413
2.200 4.727 10.339 18.603
2.400 4.753 10.440 18.775
2.600 4.789 10.510 18.963
2.800 4.817 10.620 19.167
3.000 4.835 10.683 19.391
Jordan Daniel Ulmer Page | 4
Note: Graphical and algebraic calculations were performed using the following software:
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Time of print: 9:21 PM 10/7/2014
Figure 3(A.): NMOS Characteristic Plot
Figure 4(A.): NMOS Characteristic Plot For Determining Transconductance
0 0.5 1 1.5 2 2.5 3
0
2
4
6
8
10
12
14
16
18
20
V
DS
(Volts)
I
D
S
(
m
A
)
(A)NMOS-Characteristic I
D
as a function of V
GS
and V
DS
V
GS
=2.1 V
V
GS
=2.2 V
V
GS
=2.3 V
0 0.5 1 1.5 2 2.5 3
0
2
4
6
8
10
12
14
16
18
20
X: 0.2
Y: 3.87
V
DS
(Volts)
I
D
S
(
m
A
)
(A)NMOS-Characteristic I
D
as a function of V
GS
and V
DS
X: 0
Y: 0.014
X: 1.6
Y: 4.644
X: 1.4
Y: 4.61
V
GS
=2.1 V
V
GS
=2.2 V
V
GS
=2.3 V
Jordan Daniel Ulmer Page | 5
Note: Graphical and algebraic calculations were performed using the following software:
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Time of print: 9:21 PM 10/7/2014
6. Determine the Transconductance,
from
your plot considering
and
()
( )
ii.
iii. This is the linear-like or triode region, where
is consistently
increasing and seems to be linear for small signal changes.
7. Determine the Transconductance,
from
your plot considering
and
()
( )
ii.
iii. This is the saturation region, where
is maximized
B. NMOS Threshold Voltage
1. We then built the Setup detailed in Fig #2.
Figure 5(B.): NMOS - Threshold Voltage Circuit
2. We then set
. All
results are included in the table and plot below.
Jordan Daniel Ulmer Page | 6
Note: Graphical and algebraic calculations were performed using the following software:
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Time of print: 9:21 PM 10/7/2014
3. Next we set
, incrementing
in increments of until we
identified the initial Threshold Voltage estimate.
4. At this point the Threshold voltage seemed to be .
5. Next we set
, incrementing
in increments of until
we identified a more exact Threshold voltage.
i. At this point the Threshold voltage seemed to be .
6. Next we set
, incrementing
in increments of
until we identified a more exact Threshold voltage.
i. At this point the Threshold voltage still seemed to be this is
because we could not trust that our DC power supply was accurate to
7. All of this data was compiled into the following table and plot:
Table 2(B.): NMOS - Finding The Threshold Voltage As A Function Of The Gate_Source
Voltage V_GS
NMOS - Finding The Threshold
Voltage As A Function Of The
Gate_Source Voltage
(Volts)
(mA)
0.000 0.000
0.100 0.000
0.200 0.000
0.300 0.000
0.400 0.000
0.500 0.000
0.600 0.000
0.700 0.000
0.800 0.000
0.900 0.000
1.000 0.000
1.100 0.000
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Note: Graphical and algebraic calculations were performed using the following software:
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Time of print: 9:21 PM 10/7/2014
1.200 0.000
1.300 0.000
1.400 0.000
1.450 0.004
1.460 0.004
1.470 0.005
1.480 0.005
1.490 0.006
1.500 0.007
1.510 0.007
1.520 0.008
1.530 0.009
1.540 0.010
1.550 0.011
1.600 0.020
1.700 0.076
1.800 0.331
1.900 0.940
2.000 2.306
2.100 4.650
2.200 4.960
2.300 5.000
2.400 5.010
2.500 5.020
Jordan Daniel Ulmer Page | 8
Note: Graphical and algebraic calculations were performed using the following software:
MatLab
Time of print: 9:21 PM 10/7/2014
Figure 6(B.): Finding Threshold Voltage
C. PMOS Characterization
1. We then set up the PMOS characterization circuit to characterize the PMOS
Transistor.
i. The Threshold Voltage without the resistor was (
)
R
D
V
DD
G
D
S
Figure 7(C.):
(P:N:P)(Source:Gate:Drain)
Figure 8(C.): PMOS Characterization
Circuit (No Resistor)
0 0.5 1 1.5 2 2.5
0
1
2
3
4
5
6
(B)NMOS-Finding The Threshold Voltage As A Function Of The Gate:Source Voltage V
GS
V
GS
(Volts)
I
D
(
m
A
)
Jordan Daniel Ulmer Page | 9
Note: Graphical and algebraic calculations were performed using the following software:
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Time of print: 9:21 PM 10/7/2014
2. We attained the following data:
Table 3(C.): PMOS - Finding The Threshold Voltage (No Resistor)
PMOS - Finding The
Threshold Voltage - No
Resistor
(Volts)
(mA)
0.000 0.000
0.500 0.000
1.000 0.000
1.500 0.000
2.000 0.000
2.500 0.000
3.000 0.000
3.500 0.118
4.000 29.800
D. PMOS Threshold Voltage
1. We then set up the PMOS test circuit (just added a resistor) to determine the
threshold voltage for the PMOS Transistor.
i. The Threshold Voltage with the resistor was
1. According to reason(
)
2. According to Data (
)
Figure 9(C.): PMOS - Test Circuit (With Resistor)
Jordan Daniel Ulmer Page | 10
Note: Graphical and algebraic calculations were performed using the following software:
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Time of print: 9:21 PM 10/7/2014
2. We attained the following data:
Table 4(D.): PMOS - Finding The Threshold Voltage (With Resistor)
PMOS - Finding The
Threshold Voltage -
With Resistor
(Volts)
(mA)
0.000 5.050
0.500 5.050
1.100 4.960
1.110 4.940
1.120 4.890
1.130 4.840
1.140 4.480
1.150 4.300
1.160 3.900
1.170 3.790
1.180 3.420
1.190 3.110
1.300 0.980
1.400 0.356
1.500 0.106
Jordan Daniel Ulmer Page | 11
Note: Graphical and algebraic calculations were performed using the following software:
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Time of print: 9:21 PM 10/7/2014
Conclusions:
Out of this entire lab a few notable items were quite intriguing. First, NMOS transistors are
doped as (N:P:N)(Source:Gate:Drain) and PMOS are doped as (P:N:P)(Source:Gate:Drain).
Also the, operation of the transistor can be approximately linear when the signal swing is
extremely minimal (
) .
Finally, though quite simple as an afterthought, it was beneficial to note that the Source:Gate and
Source:Drain Voltages are the same when on a PMOS (PNP arrangement) Test Circuit which
we used. The two power sources in the diagram could be combined into one because their
terminals were the same.
Figure 10: Actual PMOS Characterization Circuit
Jordan Daniel Ulmer Page | 12
Note: Graphical and algebraic calculations were performed using the following software:
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Time of print: 9:21 PM 10/7/2014
Appendix:
Table of Contents
EE 320L Electronics I LABORATORY............................... 1
Introduction:.................................................. 2
PreLab:........................................................ 2
Procedure/Results/Analysis:.................................... 2
A. NMOS Characterization ................................... 2
B. NMOS Threshold Voltage .................................. 5
C. PMOS Characterization ................................... 8
D. PMOS Threshold Voltage .................................. 9
Conclusions:.................................................. 11
Appendix:..................................................... 12
Figures: .................................................... 12
Tables: ..................................................... 12
Figures:
Figure 1(A.): NMOS (N:P:N)(Source:Gate:Drain)................ 2
Figure 2(A.): NMOS - Characterization Circuit.................. 2
Figure 3(A.): NMOS Characteristic Plot....................... 4
Figure 4(A.): NMOS Characteristic Plot For Determining
Transconductance............................................... 4
Figure 5(B.): NMOS - Threshold Voltage Circuit................. 5
Figure 6(B.): Finding Threshold Voltage........................ 8
Figure 7(C.): (P:N:P)(Source:Gate:Drain)....................... 8
Figure 8(C.): PMOS Characterization Circuit (No Resistor).... 8
Figure 9(C.): PMOS - Test Circuit (With Resistor) ................. 9
Figure 10: Actual PMOS Characterization Circuit............... 11
Tables:
Table 1(A.): NMOS Characterization Table....................... 3
Table 2(B.): NMOS - Finding The Threshold Voltage As A Function
Of The Gate_Source Voltage V_GS................................ 6
Table 3(C.): PMOS - Finding The Threshold Voltage (No Resistor) ............ 9
Table 4(D.): PMOS - Finding The Threshold Voltage (With Resistor) .......... 10