A Voltage-controlled PIN Diode Attenuator

Using an Accurate PIN Diode Model

This article presents a voltage-controlled PIN diode attenuator using an accurate PIN
diode model that can precisely simulate the attenuation characteristics. After
carefully investigating the problems with conventional PIN diode models, an
accurate PI...
By Byung-Jun Jang, In-Bok Yom and Moon-Que ee

A!ril "#, $""%
PIN diodes &a'e (een )idely used in a 'ariety o* micro)a'e and +, a!!lications, including
antenna s)itc&es, !&ase s&i*ters and attenuators- PIN diode attenuators are used
e.tensi'ely in automatic gain control /A012 and +, le'eling a!!lications-
Most PIN diode attenuators control t&e attenuation c&aracteristics t&roug& t&e *or)ard (ias
current- 3&is is com!ati(le )it& t&e *act t&at a PIN diode is a current-controlled de'ice and
its +, resistance 'alue is set (y t&e *or)ard (ias current- 3&ere*ore, !re'ious )orks in t&is
area &a'e concentrated on t&e current-controlled resistance models o* t&e PIN diode-
#-%
+ecent PIN diode attenuator studies4 s&o) t&at t&e PIN diode attenuator can (e controlled
(y an in!ut (ias 'oltage- 3&e 'oltage-controlled attenuator )it& a tem!erature
com!ensation circuit descri(ed (y Jang, et al-
4
s&o)s e.cellent linearity and good
tem!erature sta(ility o'er t&e o!erating tem!erature range-
3&e design o* 'oltage-controlled PIN diode attenuators re5uires a PIN diode model, )&ic&
can descri(e e.actly t&e relations&i! (et)een t&e +, resistance o* t&e PIN diode and its
in!ut (ias 'oltage- 6o)e'er, con'entional models do not su**iciently e.!ress t&e PIN
diode7s +, resistance as a *unction o* in!ut 'oltage, alt&oug& t&ey can simulate t&e +,
resistance 'alue as a *unction o* t&e in!ut current- 3&ere*ore, t&e attenuation c&aracteristic
o* t&e 'oltage-controlled PIN diode attenuator designed using con'entional models does
not agree )it& t&e measured results-
3&is article !resents an accurate model t&at can !recisely simulate t&e attenuation
c&aracteristic o* 'oltage-controlled PIN diode attenuators- 3&e model is 'eri*ied (y
measurement and (y nonlinear simulation using t&e &armonic (alance met&od- 3&e model
)ill allo) +, and micro)a'e designers to (etter !redict t&e attenuation 'ersus in!ut 'oltage
*or a PIN diode attenuator, and can (e a!!lied to 'arious circuits using PIN diodes-
Conventional PIN Diode Model
3&e sc&ematic diagram o* a sim!le s&unt-connected PIN diode attenuator is s&o)n
in Figure 1 - It com!rises a PIN diode, an +, c&oke inductor and t)o ca!acitors *or D1
(locking- At +, *re5uencies, t&e PIN diode essentially a!!ears as a !ure linear resistor, +
r*
,
)&ose 'alue can (e controlled (y a D1 or a lo) *re5uency control signal- At lo)
*re5uencies, t&e PIN diode (e&a'es as an ordinary P-N 8unction diode-
In order to descri(e t&e c&aracteristics o* t&e PIN diode, t&e con'entional model uses t&e
series com(ination o* a P-N diode and a 'aria(le +, resistor- 9&en t&e PIN diode is
*or)ard (iased, its +, e5ui'alent circuit &as (een generally descri(ed as a current-
controlled resistor, +
r*
, )&ic& can (e )ritten as
#
)&ere
I
d
: D1 (ias current /mA2
;, . : *itting !arameters
3&e P-N 8unction diode uses a con'entional <PI1= model t&at emulates t&e D1 !ro!erties
o* a PIN diode, and determines t&e 'alue o* +
r*
-
#-%
3&e P-N diode is connected in series )it&
an +, resistor to insure t&e same current *lo)- 3&e P-N diode !arameters )it&in t&e model
are deri'ed *rom sim!le D1 measurements o* t&e PIN diode-
At t&e +, *re5uencies, t&e P-N diode is e**ecti'ely +, s&ort-circuited (y a large 'alue
ca!acitor, not to in*luence t&e +, c&aracteristic- At D1, on t&e ot&er &and, (ecause t&e
con'entional model is e.!ressed as t&e series com(ination o* t&e P-N diode model and t&e
+, resistor, +
r*
, t&e 'aria(le resistor, +
r*
, &as an e**ect on t&e diode7s D1 c&aracteristic-
3&ere*ore, t&is +, resistance ine'ita(ly deteriorates t&e D1 c&aracteristics-
3&e in!ut (ias 'oltage V
in
and t&e D1 current t&roug& t&e diode I
d
are gi'en (y
V
in
: V
d
> +
r*
I
d
: V
d
> +
r*
*/V
d
2 /$2
)&ere
*unction */V
d
2 : I-V c&aracteristic o* t&e diode
?
=5uati
ons $ and % indicate t&at t&e in!ut (ias 'oltage V
in
is larger t&an t&e diode 8unction 'oltage
V
d
(ecause o* t&e 'oltage dro! caused (y +
r*
I
d
- Figure 2 s&o)s t&e D1 I-V c&aracteristic o*
a PIN diode and t&e load line )&ic& e.!lains t&e di**erence (et)een V
in
and V
d
-
In t&e case )&ere +
r*
: ", t&e load line is 'ertical and t&e relations&i! (et)een in!ut 'oltage
and current is t&e same as t&e !ure I-V c&aracteristic o* t&e diode- In t&e case )&ere +
r*
@
", t&e load line is tilted in a counter-clock)ise direction, and induces 'oltage errors- 3&e
larger t&e 'alue o* +
r*
, t&e larger t&is 'oltage error-
3&ere*ore, t&e con'entional PIN diode model &as a !ro(lem in including an +, resistor in
t&e D1 analysis, and t&is resistor causes a 'oltage error in t&e 'oltage-controlled PIN diode
attenuator simulation- Because t&e +, resistance 'alue &as an e**ect on D1 !ro!erties, t&e
con'entional models could not (e used to !roduce an accurate attenuation 'ersus 'oltage
c&aracteristic in t&e simulation o* 'oltage-controlled attenuators-
An Accurate PIN Diode Model
In order to resol'e t&e !ro(lems mentioned in t&e !re'ious section, an accurate PIN diode
model, s&o)n in Figure 3 , is suggested- 3&e D1 current I
d
is trans*ormed to t&e +, !art
using an ideal current-controlled current source /111<2 in order to insure t&e same current
*lo) and remo'e t&e e**ect o* t&e +, resistor on t&e D1 analysis simultaneously- Also, ideal
+, c&oke inductors and (y!ass ca!acitors are used to isolate t&e +, circuit *rom t&e D1
circuit-
3&e !ro!osed PIN diode model &as !er*ectly remo'ed t&e e**ect o* t&e +, resistor during
t&e D1 simulation (y )ay o* se!arating t&e +, and D1 circuits, )&ic& makes it a (etter
model *or 'oltage-controlled PIN diode attenuators t&an t&e con'entional PIN diode model-
Its im!lementation in a commercial simulator suc& as i(raA is s&o)n in Figure 4 - 3&e
model !arameters are com!uted using t&e cur'e-*itting !rocedure *rom Al!&a7s APD"B"?
PIN diode data s&eets- 3&e APD"B"? &as lo) ca!acitance o* "-"? !, and an B mm I-region
t&ickness- 3&is de'ice is selected to e.&i(it a )ide range o* resistance 'ersus current and
is ca!a(le o* o!erating )it& lo) distortion as an attenuating element-
In t&is model, t)o diodes )ere used to *it (ot& t&e D1 and +, !ro!erties o* t&e PIN diode-
3&e (uilt-in PIN diode model o* i(raA )as used to model t&e (e&a'ior o* t&e +,
resistance 'ersus D1 current according to =5uation #- 3&e P-N 8unction diode model )as
used to model t&e D1 'oltage-current res!onse- Bot& diodes )ere connected in !arallel
using 111< to ensure t&e same current *lo) and to remo'e t&e e**ect o* t&e +, resistor on
t&e D1 analysis- Also, ideal +, c&oke inductors and (y!ass ca!acitors are used to isolate
t&e +, circuit *rom t&e D1 circuit- 3&e P-N 8unction diode )as e**ecti'ely +, o!en-circuited
)it& ideal ca!acitors 1 : #"
##
!,, )&ile t&e +, resistance )as e**ecti'ely D1 o!en-circuited
)it& ideal inductors : #"
#C
n6 to a'oid a**ecting D1 !er*ormance-
Figure 5 com!ares t&e D1 'oltage-current res!onse simulated (y t&e i(ra simulator )it&
t&e measured 'alues- 3&e D1 I-V cur'e simulated (y t&e !ro!osed model agrees )it& t&e
e.!erimental result- Dn t&e ot&er &and, t&e simulated I-V cur'e using t&e con'entional
model s&o)s some discre!ancy (ecause +, resistance is included in t&e D1 calculation-
Attenuator Design and Results
A ;u-(and 'oltage-controlled PIN diode attenuator )as designed using t&e !ro!osed PIN
diode model-4 3&e PIN diode attenuator may take many *orms ranging *rom a sim!le
series- or s&unt-mounted diode acting as a lossy re*lecti'e attenuator to a more com!le.
structure t&at maintains a constant matc&ed in!ut im!edance across t&e *ull dynamic range
o* t&e attenuator- In t&is article, a dou(le &y(rid cou!led attenuator is c&osen, )&ic& is
ca!a(le o* !ro'iding lo) in!ut and out!ut <9+ and *lat *re5uency res!onse- Figure
6 s&o)s t&e circuit con*iguration and !&otogra!& o* t&e dou(le &y(rid cou!led attenuator
considered in t&is study- +

is a load resistor *or (iasing t&e attenuator using a 'oltage

source V
*
-
3&e PIN diode de'ice model descri(ed in t&e !re'ious section )as linked to t&e simulator
and em!loyed in t&e design- All circuit-le'el simulation and layout )ere done using t&e
i(ra &armonic (alance simulator- 3&e matc&ing section consists o* series microstri! lines
t&at com!ensate t&e (onding )ire inductance and diode7s !arasitic ca!acitance- 3&e PIN
diode attenuator )as manu*actured as a &y(rid integrated circuit on a #?-mil t&ick alumina
su(strate /
r
: C-B2 in a microstri! structure- 3&e diode makes direct contact )it& +,
ground !lanes and t&e in!ut (ias is a!!lied t&roug& 5uarter-)a'elengt& lines, )&ic& a!!ear
as a &ig& im!edance to t&e +, signal- 3&e (locking ca!acitors and (y!ass ca!acitors are
EB !, DI7s single-layer ca!acitors-
Figure 7 s&o)s t&e attenuation c&aracteristics simulated (y t&e !ro!osed model and t&e
con'entional model as a *unction o* in!ut 'oltage, toget&er )it& measured 'alues- 3&e
attenuation simulated (y t&e !ro!osed model agrees )it& t&e measured 'alue- Dn t&e
ot&er &and, t&e attenuation simulated (y t&e con'entional model is lo)er t&an t&e
measured 'alues due to 'oltage error- ,rom t&ese results it &as (een demonstrated t&at
t&e !ro!osed model can simulate t&e 'oltage-controlled PIN diode attenuator more
accurately t&an t&e con'entional model-
Conclusion
An accurate model o* a PIN diode *or 'oltage-controlled PIN diode attenuators )as
!ro!osed and 'eri*ied )it& e.!erimental data- 3&is model is 'ery e**ecti'e in designing
'oltage-controlled PIN diode attenuators, and its im!lementation in commercial simulators
is sim!le and accurate- Using t&is model, t&e attenuation c&aracteristics o* a 'oltage-
controlled PIN diode attenuator )ere success*ully simulated- 3&is model resol'es t&e
!ro(lem in t&e con'entional PIN diode model, and its use*ulness in !ractical a!!lications
)as con*irmed-
Reerences
#- J- 9alston, F<!ice 1ircuit Yields +eci!es *or PIN Diodes,F Microwaves and RF ,
No'em(er #CC$-
$- 0- 6iller, FA 1A3V Attenuator Using t&e <ingle Package <MP#%"G-"$G PIN
Diode Array,F A!!lication Note, Al!&a Industries, #CCC-
%- <- Iordanescu, 0- <imion, 1- Anton and A- Muller, FBroad(and Micro)a'e PIN
Diode Attenuators,F 1998 International Semiconductor Conference Digest , !!- E"#-
E"4-
4- B-J- Jang, I-B- Yom and <-P- ee, FA Voltage-controlled ;u-(and PIN Diode
Attenuator )it& a 3em!erature 1om!ensation 1ircuit,F %$nd =uro!ean Micro)a'e
1on*erence, <e!tem(er $""$-
?- <-A- Mass, Nonlinear Microwave Circuits , Artec& 6ouse Inc-, Nor)ood, MA
#CBB-
!"ung#$un $ang received his BS MS and !hD degrees in electronic engineering from
"onsei #niversiti$ Seoul %orea in 199& 199' and 199( res)ectivel$* From 199+ to 1999
he wor,ed on CDM- and D.C/ RF modules for 01 .lectronics* In 1999 he 2oined the
.lectronics and /elecommunications Research Institute 3./RI4 Dae2on %orea where he
has 5een engaged in the research of satellite RF com)onents* 6is current interests include
MMIC and h$5rid IC design and microwave circuit anal$sis*
In#!o% &o' received his BS degree in electronics engineering from 6an$ang #niversit$
%orea* Since Fe5ruar$ 199& he has 5een a senior research staff mem5er at the
Communications Satellite Develo)ment Center of the .lectronics and /elecommunications
Research Institute 3./RI4* 6e is currentl$ a leader for the satellite RF com)onent team* 6is
research interests include MMIC and satellite )a$load s$stem design*
Moon-ue !ee received his BS degree in electrical and electronics engineering from the
%orea -dvanced Institute of Science and /echnolog$ 3%-IS/4 Dae2on %orea in 199' and
his MS and !hD degrees in electronics engineering from Seoul National #niversit$ Seoul
%orea in 1997 and 1999 res)ectivel$* Following graduation he 2oined the satellite
communications s$stem de)artment of the .lectronics and /elecommunications Research
Institute 3./RI4 Dae2on %orea where he was involved with the develo)ment of microwave
com)onents and millimeter8wave MMICs for satellite )a$loads* 6e is currentl$ an assistant
)rofessor in the de)artment of electrical and com)uter engineering #niversit$ of Seoul
Seoul %orea* 6is research interests include the anal$sis design and o)timi9ation of
nonlinear microwave circuits*