Beruflich Dokumente
Kultur Dokumente
Dr Chen Jingsheng
Dr.
Reference Books:
2
Percentages
Mid-term test
Early of March
3
switch Position sensor IC circuit
Ch t III:
Chapter III S
Semiconductors
i d t
Chapter
p IV: Semiconductor Devices
5
Chapter I Electrical conduction in solids
σ of solid solution:
Electrical
Nordheim’s rule
Conduction
in non-metal
non metal
6
Characteristics of metal
Cu: 1s22s22p63s23p63p104s1
Cu: 1s22s22p63s23p63p104s1
u
M
Movement off electrons
l iin metall crystal:
l
Move randomly
Ex A
Δx
vdx
Jx
Δx
Current > 0
uxi
time
ti t
11
So, the velocity vxi in the x direction at time t will be:
eE x
Newton’s second law: v xi = u xi + (t − ti ) 1-5
F = ma, v = v0 + at me
We assume that immediately after a collision with a vibrating ion, the electron may
move in any random direction; that is, it can just as likely move along the negative
or positive x, so that uxi averaged over many electrons is zero. Thus,
1 eE
vdx = [v x1 + v x 2 + vx 3 + ... + v xN ] = x (t − ti ) 1-6
N me
12
(t − ti ) is the average free time for N electrons between collisions, or the mean
time between collisions (also known as mean scattering time and relaxation
time), which is denoted as τ, so eqn 1-6 can be written as,
eτ
v dx = Ex 1-7
me
v dx = μ d E x 1-8
J x = en μ d E x 1-9
J x = σE x σ = en μ d
Reciprocal
p 1/τ : the mean p
probability
ypper unit time that the electron will be
scattered.
13
Consider an infinitesimally small time interval dt at time t. Let N be the number
t The probability of scattering during dt is (1/τ)dt and
unscattered electrons at time t.
the number of scattered electrons during dt is N(1/τ)dt . The change dN in N is thus:
1
dN = − N ( )dt
τ
t
N = N 0 exp(− ),
τ
N 0 is the total number of unscattered electrons at time t = 0
The mean free time can be calculated from the mathematical definition
of t .
∞
t=
∫ 0
tNdt
=τ
∞
∫ 0
Ndt
∞
Γ(α ) = ∫ e −t t α −1dt ; Γ(α + 1) = αΓ(α ) 14
0
2. Temperature dependence of resistivity: pure metals
1
T → σ=1/ρ = σ = en μ d
ρ
T → μd
eτ
μd =
me
T→τ
T → Scattering
a2 ∝ T
1 1 C
So, τ∝ ∝ τ= 1-10
πa 2 T T 16
eτ eC
μd = μd =
me meT 1 11
1-11
e 2 nC
C 1
σ T = enμ d =
me T
1 1 mT
ρT = = = 2 e = AT 1-12
σT enμ d e nC
17
3. Matthiessen’s rule
τI
τΤ
Figure 1-4
The impurity
p y atom results in a local distortion of the crystal y lattice, and then the
local potential energy is changed. It will be effective in scattering.
18
Two types of mean free times between collisions: τT, for scattering from thermal
vibrations only and τI, for scattering from impurities only.
Like addition of probability
1 1 1
= + 1-14
τ τT τI
1 1 1
μd = eτ/me = +
μd μL μI 1-15
1 1 1
Matthiessen’s rule ρ= = + = ρT + ρ I
enμ d enμ L enμ I 1-16
τI depends on the separation between the impurity atoms and therefore on the
concentration of those atoms. 19
There may also be electrons scattering from other crystal defects. All of these
scatteringg pprocesses add to the resistivityy of a metal, jjust as the scatteringg pprocess
from impurities, so,
ρ = ρT + ρ R + ρ I 1-17
Where ρR is called the residual resistivity and is due to the scattering of all the
crystal defects. The residual resistivity shows very little temperature dependence,
e e s ρT = AT,, so,
whereas
w
ρ ≈ AT + B 1-18
20
The temperature coefficient of resistivity (TCR) α0 is defined as the fractional
change in the resistivity per unit temperature increase at the reference temperature
T0, that is,
1 ⎡ δρ ⎤
α0 = 1-19
ρ 0 ⎢⎣ δ T ⎥⎦ T =T0
1 ⎡ ρ − ρ0 ⎤
α0 =
ρ 0 ⎢⎣ T − T0 ⎥⎦
ρ = ρ 0 [1 + α 0 (T − T0 )] 1-20
α0 = T0-1
21
Table 1.1 Resistivity, thermal coefficient of resistivity α0 at 273K (0 °C) for various
metals. The resistivity index n in ρ ∝ Tn or some of the metals is also shown.
Metal ρ0 (nΩ m) α0 (1 /K) n Comment
Nickel, Ni 59.0 1/125 1.72 Magnetic metal; 273 < T < 627K
•For some magnetic metals, the conduction electron is not scattered simply by atomic
vibrations, but is affected by its magnetic interaction with the ions in the lattice. This22leads
to a complicated T dependence.
Figure 1-5
100
ρ∝T
10
•As the T decreases, typically below
1
~ 100 K for many metals, our simple
assumption that all the atoms are
Resistivity(nnΩm)
ρ (nΩ m) vibrating
ib ti withith a constant
t t frequency
f
0.1 3.5
3 ρ∝T fails. The mean free time τ becomes
ρ ∝ T5 2.5 longer and strongly T dependent,
0.01
2 leadingg to a smaller resistivityy than
0.001
1.5 ρ ∝ T5 the ρ∝ T. For some metals, such as
1
0.5
copper, ρ∝ T5 (Figure 1-5).
0.0001 0
0 20 40 60 80 100
T (K)
0.00001
1 10 100 1000 10000
Temperature (K)
F an iso-morphous
For i h alloy
ll off two
t metals,
t l
ρ = ρT + ρR + ρI
1 A semi-empirical equation.
ρI =
enμ dI
eτ I lI
μ dI = τI =
me u
24
600
C u-N i A lloys
500
R e s i s t iv i ty ( n Ω m )
400
3 00
200
100
0
0 20 40 60 80 100
1 00% C u at.% N i 10 0 % N i
(b )
25
Nordheim’s rule: relates the impurity resistivity ρI to the atomic fraction X of
solute atoms in a solid solution, as follows.
ρ I = CX (1 − X ) 1-21
Where C is the constant termed the Nordheim coefficient, which represents the
effectiveness of the solute atom in increasing the resistivity. Obviously, for small
amounts of impurity, X << 1 and ρI = CX.
26
Resistivity ρ=1/(enμd), change in n also affects the resistivity
Nordheim’s rule: the alloying does not significantly vary the number of
conduction electrons per atom on the alloy.
Resistivity at high Ni
Nordheim’s rule is only
concentration by Eq.1-21
valid at low concentration
is smaller than actual
value.
27
With Nordheim’s rule in eqn 1-21, the resistivity of an alloy of composition X is,
ρ = ρ matrix + CX (1 − X ) 1-22
28
4. Heterogeneous mixture rules
Nordheim’s rule only applies to solid solutions that are single-phase solids. In other
words, it is valid for homogeneous
g mixtures in which the atoms are mixed at the
atomic level throughout the solid.
Continuous phase
Dispersed phase y
L L
A A
A x
Jx Jx
L
α β
30
L
The effective resistance Reff for the whole material is,
A
Jx
Lα ρα Lβ ρ β 1-23
Reff = +
A A
α β
Lρ eff
Reff = 1-24
A
perpendicular
di l
Where ρeff is the effective resistivity, Lα , Lβ are the total length of α and β,
respectively, and L = Lα + Lβ. Using volume fraction χα = Lα/L and χβ = Lβ/L in
eqn 1-23, we find,
ρ eff = χα ρα + χ β ρ β 1-25
31
The effective resistance Reff for the whole material is,
L
A 1 A Aα Aβ
= = +
Reff Lρ eff Lρα Lρ β
Aσ eff Aα σ α Aβ σ β
= +
L L L
parallel
Where σeff is the effective conductivity and A = Aα + Aβ. Using χα = Aα/A and
χβ = Aβ/A,, we find,,
σ eff = χα σ α + χ β σ β 1-26
32
Continuous phase
Dispersed phase y 1) the resistivities of the two phases are not very
different,
A
x
Jx
Random
33
1) the resistivities of the two phases are not very different.
ρα (χα L ) ρ β (χ β L )
A/N
(b)
R fiber = +
(A / N ) (A / N )
L
(a) A two phase solid. (b) A thin fiber cut out from the solid.
Assume that ρc and ρd are the resistivities of the continuous and dispersed phases (ρc
and ρd are very different), and χc and χd are their volume fractions.
If the dispersed phase is much more resistive with respect to the matrix, that is, ρd >
10ρc, then,
1
(1 + χd ) 1-27
ρ eff = ρ c 2
(1 − χ d )
(1 − χ d )
ρ effff = ρ c 1 28
1-28
(1 + 2 χ d )
We therefore have at least four mixture rules, the uses of which depends on the
mixture geometry and the resistivities of the various phases.
35
5. Hall Effect
The force F (Lorentz force) acting on a charge q
moving with a velocity v in a magnetic B is
given through the vector product:
Jy =0
Bz
y
VH V + + + + + F = qv × B 1-29
z x
Jx Ex Jx
vdx
A F = qvdx Bz Di i ?
Direction?
Bz
V
+
36
F = qv × B
q =-e
v v is swept into B through a smaller angle
F = qv´B
q is -e, so F is still in –y direction.
Jy =0
Bz
y
VH V + + + +eE +
H
z x
Jx Ex Jx
vdx
EH
evdxBz
A
Bz
V
+ 37
The accumulation of electrons near the bottom results in an internal electric field EH
in the –y direction. This is called Hall field and gives rise to Hall voltage VH
between the top and the bottom.
⎛ 1⎞
E H = ⎜ ⎟ J x Bz 1-31
⎝ en ⎠
Ey
RH = 1 32
1-32
J x Bz
38
The quantity RH measures the resulting Hall field, along +y, per unit transverse
applied current and magnetic field. The larger RH, the greater Ey for a given Jx and
Bz. Therefore,
Th f RH is
i a gauge off the
h magnitude
i d off the
h hall
h ll effect.
ff A comparison
i off 1-
1
31 and 1-32 shows that for metal,
Ey
RH = 1-32
J x Bz
EH = − E y
⎛ 1⎞ ⎛ 1⎞
E H = ⎜ ⎟ J x Bz − ⎜ ⎟ J x Bz
en
⎝ en ⎠ RH = ⎝ ⎠
J x Bz
1
RH = − 1-33
en
39
40
Application of Hall effect
IX= VL/R
41
6. The conduction of thin metal film
1 1 1 1 1
ρ crystall ∝ ∝ ρ film ∝ = +
τ λ l λ d
ρ film
Elastic scattering = 1 + 1.33β ;
ρ film λ from boundary ρ crystal
= 1+ ( )
ρ crystal d λ⎛ R ⎞
β= ⎜ ⎟
11-34
34 d ⎝1− R ⎠
lsurf = D / (cos θ )
lsurf = 2D / (cos θ )
44
According to Mathiessen’s rule, the overall mean free path-l, λ is the mean free
path of bulk crystal (no surface scattering)
1 1 1 1 cos θ
= + = +
l λ lsurf λ 2 D
⎛ π2 ⎞
⎜ ∫ π cos θdθ ⎟
⎛ 2D ⎞ ⎜ −2 ⎟
lsurf =⎜ ⎟ = 2 D /⎜ π ⎟ = πD
⎝ cos θ ⎠ ⎜ ∫ 2π dθ ⎟
⎜ − ⎟
⎝ 2 ⎠
λ λ Elastic scattering
= 1+ (specular scattering)
lsurf πD ρ 8λ 1 λ
= 1+ (1 − p ), > 0.3, 1-37
ρ 1⎛λ⎞ ρ bulk 3D π D
= 1+ ⎜ ⎟
ρ bulk π ⎝D⎠ 1-36 where p is fraction of elastic scattering from
surface 45
Examples
35 300
(a) (b) As deposited
Annealed at 100 C
30
100 Annealed at 150 C
25 50
20
ρbulk = 16.7 n m
15 10
5 10 50 100 500
0 0.05 0.01 0.015 0.02 0.025
Film thickness (nm)
1/d (1/micron)
(a) ρfilm of Cu polycrystalline films (b) ρfilm of Cu polycrystalline films
versus reciprocal mean grain size. Film versus film thickness. Annealing the
thi k
thickness D=250-900nm
D 250 900 ddoes nott affect
ff t fil tto reduce
film d th
the polycrystalline
l t lli does
d
the resistivity. not affect the resistivity since ρfilm is
controlled by surface scattering.
Interception with Y axis and slope can deduce the
single crystal resistivity and mean free path of
single crystal
7. Application of metal film: Interconnects in microelectronics
Why Cu interconnect has replaced Al interconnect with increase of the chip speed?
εA ε 0ε rTL εA ε 0ε rWL
CH = = ; CV = = 1-38
d X d H
⎛T W⎞
Ceff = 2(C H + CV ) = 2ε 0ε r L⎜ + ⎟ 1-39
⎝X H⎠
⎛ L2 ⎞⎛ T W ⎞
RC = 2ε 0ε r ρ ⎜⎜ ⎟⎟⎜ + ⎟ 1-40
⎝ TW ⎠⎝ X H ⎠
Three important factors affect the RC and thus the chip speed,
49
Electromigration
(a) Electrons bombard the metal ions and force them to slowly migrate
(b) Formation
i off voids
id andd hillocks
hill k ini a polycrystalline
l lli metall interconnect
i b the
by h
electromigration of metal ions along grain boundaries and interfaces. (c) Acceler-
ated tests on 3 mm CVD (chemical vapor deposited) Cu line. T = 200 oC, J = 6
MA cm-2: void formation and fatal failure (break),
(break) and hillock formation.
formation
|SOURCE: Courtesy of L. Arnaud et al, Microelectronics Reliability, 40, 86, 2000. 50
8. Electrical Conductivity of Nonmetals
10-18 10-15 10-12 10-9 10-6 10-3 100 103 106 109 1012
Conductivity (Ωm)-11
51
(1) Semiconductors
E
hole
e-
Figure 1-9
S
Sources off mobile
bil charges:
h
E
1. Crystal defects: vacancies and interstitial
V
Vacancy aids
id the
th diffusion
diff i off positive
iti ion
i impurities which are often ionized or
charged.
Anion vacancy
acts as a donor Interstitial
I t titi l cation
ti diffuses
diff
53
Glasses
Na+
54
Conductivity σ of the material depends on all the conduction mechanisms with
eachh species
i off charge
h carrier
i making
ki a contribution,
t ib ti so it is
i given
i b
by
σ = ∑ qi ni μi 1-42
55
For many insulators, whether ceramic, glass or polymer, the conductivity follows
an exponential or Arrhenius-type temperature dependence so that σ is thermally
activated,
⎛ Eσ ⎞
σ = σ 0 exp⎜ − ⎟ 1-43
⎝ kT ⎠
56